MICROCHIP TC4422VMF713

TC4421/TC4422
9A High-Speed MOSFET Drivers
Features
General Description
• High Peak Output Current: 9A
• Wide Input Supply Voltage Operating Range:
- 4.5V to 18V
• High Continuous Output Current: 2A Max
• Fast Rise and Fall Times:
- 30 ns with 4,700 pF Load
- 180 ns with 47,000 pF Load
• Short Propagation Delays: 30 ns (typ)
• Low Supply Current:
- With Logic ‘1’ Input – 200 µA (typ)
- With Logic ‘0’ Input – 55 µA (typ)
• Low Output Impedance: 1.4Ω (typ)
• Latch-Up Protected: Will Withstand 1.5A Output
Reverse Current
• Input Will Withstand Negative Inputs Up To 5V
• Pin-Compatible with the TC4420/TC4429
6A MOSFET Driver
• Space-saving 8-Pin 6x5 DFN Package
The TC4421/TC4422 are high-current buffer/drivers
capable of driving large MOSFETs and IGBTs.
Applications
•
•
•
•
•
Line Drivers for Extra Heavily-Loaded Lines
Pulse Generators
Driving the Largest MOSFETs and IGBTs
Local Power ON/OFF Switch
Motor and Solenoid Driver
These devices are essentially immune to any form of
upset, except direct overvoltage or over-dissipation.
They cannot be latched under any conditions within
their power and voltage ratings. These parts are not
subject to damage or improper operation when up to
5V of ground bounce is present on their ground terminals. They can accept, without damage or logic upset,
more than 1A inductive current of either polarity being
forced back into their outputs. In addition, all terminals
are fully protected against up to 4 kV of electrostatic
discharge.
The TC4421/TC4422 inputs may be driven directly
from either TTL or CMOS (3V to 18V). In addition,
300 mV of hysteresis is built into the input, providing
noise immunity and allowing the device to be driven
from slowly rising or falling waveforms.
With both surface-mount and pin-through-hole
packages and four operating temperature range offerings, the TC4421/22 family of 9A MOSFET drivers fit
into most any application where high gate/line
capacitance drive is required.
Package Types(1)
VDD
INPUT
NC
GND
1
8 VDD
2 TC4421 7 OUTPUT
3 TC4422 6 OUTPUT
4
5 GND
VDD
OUTPUT
OUTPUT
GND
VDD 1
INPUT 2
NC 3
GND 4
TC4421
TC4422
TC4421 TC4422
VDD
7
OUTPUT OUTPUT
6
OUTPUT OUTPUT
5
GND
2: Exposed pad of the DFN package is electrically isolated.
 2004 Microchip Technology Inc.
Tab is
Common
to VDD
VDD
8
Note 1: Duplicate pins must both be connected for proper operation.
5-Pin TO-220
GND
TC4421
TC4422
INPUT
GND
VDD
GND
OUTPUT
8-Pin DFN(2)
8-Pin PDIP/ TC4421 TC4422
SOIC
DS21420D-page 1
TC4421/TC4422
Functional Block Diagram
VDD
TC4421
Inverting
200 µA
300 mV
Output
TC4422
Input
Non-Inverting
4.7V
GND
Effective
Input
C = 25 pF
DS21420D-page 2
 2004 Microchip Technology Inc.
TC4421/TC4422
1.0
ELECTRICAL
CHARACTERISTICS
† Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device. These
are stress ratings only and functional operation of the device
at these or any other conditions above those indicated in the
operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.
Absolute Maximum Ratings†
Supply Voltage ..................................................... +20V
Input Voltage .................... (VDD + 0.3V) to (GND – 5V)
Input Current (VIN > VDD)................................... 50 mA
Package Power Dissipation (TA ≤ 70°C)
5-Pin TO-220 .................................................... 1.6W
DFN .............................................................. Note 2
PDIP ............................................................ 730 mW
SOIC............................................................ 750 mW
Package Power Dissipation (TA ≤ 25°C)
5-Pin TO-220 (With Heatsink) ........................ 12.5W
Thermal Impedances (To Case)
5-Pin TO-220 RθJ-C ...................................... 10°C/W
DC CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, TA = +25°C with 4.5V ≤ VDD ≤ 18V.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Input
Logic ‘1’, High Input Voltage
VIH
2.4
1.8
—
V
Logic ‘0’, Low Input Voltage
VIL
—
1.3
0.8
V
Input Current
IIN
–10
—
+10
µA
0V ≤ VIN ≤ VDD
High Output Voltage
VOH
VDD – 0.025
—
—
V
DC TEST
Low Output Voltage
VOL
—
—
0.025
V
DC TEST
Output Resistance, High
ROH
—
1.4
—
Ω
IOUT = 10 mA, VDD = 18V
Output Resistance, Low
ROL
—
0.9
1.7
Ω
IOUT = 10 mA, VDD = 18V
Peak Output Current
IPK
—
9.0
—
A
VDD = 18V
Continuous Output Current
IDC
2
—
—
A
10V ≤ VDD ≤ 18V, TA = +25°C
(TC4421/TC4422 CAT only) (Note 3)
Latch-Up Protection
Withstand Reverse Current
IREV
—
>1.5
—
A
Duty cycle ≤ 2%, t ≤ 300 µsec
tR
—
60
75
ns
Figure 4-1, CL = 10,000 pF
Fall Time
tF
—
60
75
ns
Figure 4-1, CL = 10,000 pF
Delay Time
tD1
—
30
60
ns
Figure 4-1
Delay Time
tD2
—
33
60
ns
Figure 4-1
IS
—
—
0.2
55
1.5
150
mA
µA
VIN = 3V
VIN = 0V
VDD
4.5
—
18
V
Output
Switching Time (Note 1)
Rise Time
Power Supply
Power Supply Current
Operating Input Voltage
Note 1:
2:
3:
Switching times ensured by design.
Package power dissipation is dependent on the copper pad area on the PCB.
Tested during characterization, not production tested.
 2004 Microchip Technology Inc.
DS21420D-page 3
TC4421/TC4422
DC CHARACTERISTICS (OVER OPERATING TEMPERATURE RANGE)
Electrical Specifications: Unless otherwise noted, over operating temperature range with 4.5V ≤ VDD ≤ 18V.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Logic ‘1’, High Input Voltage
VIH
2.4
—
—
V
Logic ‘0’, Low Input Voltage
VIL
—
—
0.8
V
Input Current
IIN
–10
—
+10
µA
0V ≤ VIN ≤ VDD
VOH
VDD – 0.025
—
—
V
DC TEST
Low Output Voltage
VOL
—
—
0.025
V
DC TEST
Output Resistance, High
ROH
—
2.4
3.6
Ω
IOUT = 10 mA, VDD = 18V
ROL
—
1.8
2.7
Ω
IOUT = 10 mA, VDD = 18V
Rise Time
tR
—
60
120
ns
Figure 4-1, CL = 10,000 pF
Fall Time
tF
—
60
120
ns
Figure 4-1, CL = 10,000 pF
Delay Time
tD1
—
50
80
ns
Figure 4-1
Delay Time
tD2
—
65
80
ns
Figure 4-1
IS
—
—
—
—
3
0.2
mA
VIN = 3V
VIN = 0V
VDD
4.5
—
18
V
Input
Output
High Output Voltage
Output Resistance, Low
Switching Time (Note 1)
Power Supply
Power Supply Current
Operating Input Voltage
Note 1:
Switching times ensured by design.
TEMPERATURE CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, all parameters apply with 4.5V ≤ VDD ≤ 18V.
Parameters
Sym
Min
Typ
Max
Units
Specified Temperature Range (C)
TA
0
—
+70
°C
Specified Temperature Range (E)
TA
–40
—
+85
°C
Specified Temperature Range (V)
TA
–40
—
+125
°C
Conditions
Temperature Ranges
Maximum Junction Temperature
TJ
—
—
+150
°C
Storage Temperature Range
TA
–65
—
+150
°C
Thermal Resistance, 5L-TO-220
θJA
—
71
—
°C/W
Thermal Resistance, 8L-6x5 DFN
θJA
—
33.2
—
°C/W
Thermal Resistance, 8L-PDIP
θJA
—
125
—
°C/W
Thermal Resistance, 8L-SOIC
θJA
—
120
—
°C/W
Package Thermal Resistances
DS21420D-page 4
Typical 4-layer board with
vias to ground plane
 2004 Microchip Technology Inc.
TC4421/TC4422
2.0
TYPICAL PERFORMANCE CURVES
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note: Unless otherwise indicated, TA = +25°C with 4.5V ≤ VDD ≤ 18V.
220
180
200
160
180
22,000 pF
140
22,000 pF
140
120
10,000 pF
100
80
4700 pF
60
120
100
80
10,000 pF
60
4700 pF
40
40
1000 pF
20
0
tFALL (nsec)
tRISE (nsec)
160
20
1000 pF
4
6
FIGURE 2-1:
Voltage.
8
10
12
VDD (V)
14
16
0
18
Rise Time vs. Supply
4
6
8
FIGURE 2-4:
Voltage.
10
12
VDD (V)
14
16
Fall Time vs. Supply
300
300
5V
5V
250
250
10V
150
15V
100
tFALL (nsec)
tRISE (nsec)
10V
200
200
150
15V
100
50
50
0
100
1000
FIGURE 2-2:
Load.
10,000
CLOAD (pF)
0
100
100,000
Rise Time vs. Capacitive
1000
FIGURE 2-5:
Load.
10,000
CLOAD (pF)
100,000
Fall Time vs. Capacitive
50
90
CLOAD = 10,000 pF
VDD = 15V
80
CLOAD = 1000 pF
45
70
Time (nsec)
Time (nsec)
18
60
tRISE
50
40
tD2
35
tD1
tFALL
40
30
30
-40
0
40
80
120
25
4
6
TA (°C)
FIGURE 2-3:
Temperature.
Rise and Fall Times vs.
 2004 Microchip Technology Inc.
8
10
12
14
16
18
VDD (V)
FIGURE 2-6:
Supply Voltage.
Propagation Delay vs.
DS21420D-page 5
TC4421/TC4422
Note: Unless otherwise indicated, TA = +25°C with 4.5V ≤ VDD ≤ 18V.
220
180
VDD = 18V
200
160
2 MHz
180
140
140
120
63.2 kHz
1.125 MHz
100
80
ISUPPLY (mA)
ISUPPLY (mA)
160
632 kHz
60
40
1000
10,000
CLOAD (pF)
140
140
120
120
2 MHz
63.2 kHz
80
1.125 MHz
60
40
632 kHz
20
200 kHz
1000
22,000 pF
10,000 pF
47,000 pF
100
80
60
4700 pF
0.1 µF
20 kHz
20
470 pF
0
100
1000
10,000
CLOAD (pF)
10
100,000
FIGURE 2-8:
Supply Current vs.
Capacitive Load (VDD = 12V).
100
Frequency (kHz)
1000
FIGURE 2-11:
Supply Current vs.
Frequency (VDD = 12V).
100
120
VDD = 6V
200 kHz
VDD = 6V
47,000 pF
100
80
22,000 pF
60
50
63.2 kHz
40
2 MHz
10,000 pF
4700 pF
60
40
0.1 µF
20 kHz
10
20
470 pF
1000
10,000
CLOAD (pF)
100,000
FIGURE 2-9:
Supply Current vs.
Capactive Load (VDD = 6V).
DS21420D-page 6
80
632 kHz
20
0
100
ISUPPLY (mA)
70
30
470 pF
100
Frequency (kHz)
40
0
90
4700 pF
VDD = 12V
160
100
0.1 µF
60
180
VDD = 12V
ISUPPLY (mA)
ISUPPLY (mA)
80
FIGURE 2-10:
Supply Current vs.
Frequency (VDD = 18V).
180
ISUPPLY (mA)
100
0
10
100,000
FIGURE 2-7:
Supply Current vs.
Capacitive Load (VDD = 18V).
160
10,000 pF
120
20
20
0
100
22,000 pF
40
20 kHz
200 kHz
VDD = 18V 47,000 pF
0
10
100
Frequency (kHz)
1000
FIGURE 2-12:
Supply Current vs.
Frequency (VDD = 6V).
 2004 Microchip Technology Inc.
TC4421/TC4422
Note: Unless otherwise indicated, TA = +25°C with 4.5V ≤ VDD ≤ 18V.
50
120
VDD = 10V
CLOAD = 10,000 pF
110
100
VDD = 18V
CLOAD = 10,000 pF
VIN = 5V
45
80
Time (nsec)
Time (nsec)
90
70
60
tD2
50
40
35
tD2
tD1
30
40
tD1
30
25
20
10
20
–60 –40 –20
0
1
2
3
4
5
6
7
8
Input Amplitude (V)
FIGURE 2-13:
Amplitude.
9
10
Propagation Delay vs. Input
0
FIGURE 2-16:
Temperature.
10-6
20 40
TA (°C)
60
80
100 120
Propagation Delay vs.
103
IQUIESCENT (µA)
A•sec
VDD = 18V
10-7
Input = 1
102
Input = 0
10-8
4
6
8
10
12
VDD (V)
14
16
18
NOTE: The values on this graph represent the loss seen
by the driver during a complete cycle. For the loss
in a single transition, divide the stated value by 2.
FIGURE 2-14:
Supply Voltage.
-60 -40 -20
FIGURE 2-17:
vs. Temperature.
40
60
80 100 120
Quiescent Supply Current
Crossover Energy vs.
6
6
5.5
5
5
4.5
TJ = 150°C
4.5
4
RDS(ON) (Ω)
RDS(ON) (Ω)
20
TJ (°C)
5.5
3.5
3
2.5
2
TJ = 25°C
1.5
4
3.5
TJ = 150°C
3
2.5
2
1.5
1
0.5
0
TJ = 25°C
1
4
6
8
10
12
VDD (V)
14
16
FIGURE 2-15:
High-State Output
Resistance vs. Supply Voltage.
 2004 Microchip Technology Inc.
18
0.5
4
6
8
10
12
VDD (V)
14
16
18
FIGURE 2-18:
Low-State Output
Resistance vs. Supply Voltage.
DS21420D-page 7
TC4421/TC4422
3.0
PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.
TABLE 3-1:
PIN FUNCTION TABLE
Pin No.
8-Pin PDIP,
SOIC
Pin No.
8-Pin DFN
Pin No.
5-Pin TO-220
Symbol
1
1
—
VDD
2
2
1
INPUT
3
3
—
NC
4
4
2
GND
Ground
5
5
4
GND
Ground
6
6
5
OUTPUT
CMOS push-pull output
7
7
—
OUTPUT
CMOS push-pull output
3.1
Description
Supply input, 4.5V to 18V
Control input, TTL/CMOS compatible input
No connection
8
8
3
VDD
Supply input, 4.5V to 18V
—
PAD
—
NC
Exposed metal pad
—
—
TAB
VDD
Metal tab is at the VDD potential
Supply Input (VDD)
The VDD input is the bias supply for the MOSFET driver
and is rated for 4.5V to 18V with respect to the ground
pin. The VDD input should be bypassed to ground with
a local ceramic capacitor. The value of the capacitor
should be chosen based on the capacitive load that is
being driven. A minimum value of 1.0 µF is suggested.
3.3
The MOSFET driver output is a low-impedance,
CMOS, push-pull style output capable of driving a
capacitive load with 9.0A peak currents. The MOSFET
driver output is capable of withstanding 1.5A peak
reverse currents of either polarity.
3.4
3.2
Control Input
The MOSFET driver input is a high-impedance,
TTL/CMOS compatible input. The input also has
300 mV of hysteresis between the high and low
thresholds that prevents output glitching even when the
rise and fall time of the input signal is very slow.
CMOS Push-Pull Output
Ground
The ground pins are the return path for the bias current
and for the high peak currents that discharge the load
capacitor. The ground pins should be tied into a ground
plane or have very short traces to the bias supply
source return.
3.5
Exposed Metal Pad
The exposed metal pad of the 6x5 DFN package is not
internally connected to any potential. Therefore, this
pad can be connected to a ground plane or other
copper plane on a printed circuit board to aid in heat
removal from the package.
DS21420D-page 8
 2004 Microchip Technology Inc.
TC4421/TC4422
4.0
APPLICATIONS INFORMATION
+5V
90%
Input
VDD = 18V
0V
4.7 µF
1
0.1 µF
2
+18V
tD1
tD2
tF
tR
90%
90%
Output
8
0.1 µF
Input
10%
6
10%
10%
0V
Inverting Driver
TC4421
Output
7
CL = 10,000 pF
+5V
90%
Input
4
5
0V
+18V
Input: 100 kHz,
square wave,
tRISE = tFALL ≤ 10 nsec
tD1 90%
tR
Output
0V
Note: Pinout shown is for the DFN, PDIP and SOIC packages.
FIGURE 4-1:
10%
10%
tD2
90%
tF
10%
Non-Inverting Driver
TC4422
Switching Time Test Circuits.
 2004 Microchip Technology Inc.
DS21420D-page 9
TC4421/TC4422
5.0
PACKAGING INFORMATION
5.1
Package Marking Information
5-Lead TO-220
XXXXXXXXX
XXXXXXXXX
YYWWNNN
8-Lead DFN
Example:
TC4421CAT
XXXXXXXXX
0420256
Example:
XXXXXXX
XXXXXXX
XXYYWW
NNN
TC4421
EMF
0420
256
8-Lead PDIP (300 mil)
Example:
XXXXXXXX
XXXXXNNN
YYWW
8-Lead SOIC (208 mil)
TC4421
CPA256
0420
Example:
XXXXXXXX
XXXXXXXX
YYWWNNN
Legend:
Note:
*
XX...X
YY
WW
NNN
GTC4421
ESM
0420256
Customer specific information*
Year code (last 2 digits of calendar year)
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line thus limiting the number of available characters
for customer specific information.
Standard OTP marking consists of Microchip part number, year code, week code, and traceability code.
DS21420D-page 10
 2004 Microchip Technology Inc.
TC4421/TC4422
5-Lead Plastic Transistor Outline (AT) (TO-220)
L
H1
Q
b
e3
e1
E
e
ØP
EJECTOR PIN
a (5X)
C1
A
J1
F
D
Units
Dimension Limits
e
Lead Pitch
Overall Lead Centers
Space Between Leads
Overall Height
Overall Width
Overall Length
Flag Length
Flag Thickness
Through Hole Center
Through Hole Diameter
Lead Length
Base to Bottom of Lead
Lead Thickness
Lead Width
Mold Draft Angle
e1
e3
A
E
D
H1
F
Q
P
L
J1
C1
b
a
INCHES*
MAX
MIN
.060
.072
.263
.273
.030
.040
.190
.160
.385
.415
.560
.590
.234
.258
.045
.055
.103
.113
.146
.156
.560
.540
.090
.115
.022
.014
.025
.040
3°
7°
MILLIMETERS
MIN
MAX
1.52
1.83
6.68
6.93
0.76
1.02
4.06
4.83
9.78
10.54
14.22
14.99
5.94
6.55
1.14
1.40
2.62
2.87
3.71
3.96
13.72
14.22
2.29
2.92
0.36
0.56
0.64
1.02
3°
7°
*Controlling Parameter
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or
protrusions shall not exceed .010" (0.254mm) per side.
JEDEC equivalent: TO-220
Drawing No. C04-036
 2004 Microchip Technology Inc.
DS21420D-page 11
TC4421/TC4422
8-Lead Plastic Dual Flat No Lead Package (MF) 6x5 mm Body (DFN-S) – Saw Singulated
DS21420D-page 12
 2004 Microchip Technology Inc.
TC4421/TC4422
8-Lead Plastic Dual In-line (P) – 300 mil (PDIP)
E1
D
2
n
1
α
E
A2
A
L
c
A1
β
B1
p
eB
B
Units
Dimension Limits
n
p
Number of Pins
Pitch
Top to Seating Plane
Molded Package Thickness
Base to Seating Plane
Shoulder to Shoulder Width
Molded Package Width
Overall Length
Tip to Seating Plane
Lead Thickness
Upper Lead Width
Lower Lead Width
Overall Row Spacing
Mold Draft Angle Top
Mold Draft Angle Bottom
* Controlling Parameter
§ Significant Characteristic
A
A2
A1
E
E1
D
L
c
§
B1
B
eB
α
β
MIN
.140
.115
.015
.300
.240
.360
.125
.008
.045
.014
.310
5
5
INCHES*
NOM
MAX
8
.100
.155
.130
.170
.145
.313
.250
.373
.130
.012
.058
.018
.370
10
10
.325
.260
.385
.135
.015
.070
.022
.430
15
15
MILLIMETERS
NOM
8
2.54
3.56
3.94
2.92
3.30
0.38
7.62
7.94
6.10
6.35
9.14
9.46
3.18
3.30
0.20
0.29
1.14
1.46
0.36
0.46
7.87
9.40
5
10
5
10
MIN
MAX
4.32
3.68
8.26
6.60
9.78
3.43
0.38
1.78
0.56
10.92
15
15
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed
.010” (0.254mm) per side.
JEDEC Equivalent: MS-001
Drawing No. C04-018
 2004 Microchip Technology Inc.
DS21420D-page 13
TC4421/TC4422
8-Lead Plastic Small Outline (SM) – Medium, 208 mil Body (SOIJ)
(JEITA/EIAJ Standard, Formerly called SOIC)
E
E1
p
D
2
1
n
B
α
c
A2
A
φ
L
β
Units
Dimension Limits
n
p
MIN
INCHES*
NOM
8
.050
.075
.074
.005
.313
.208
.205
.025
4
.009
.017
12
12
A1
MAX
MILLIMETERS
NOM
8
1.27
1.78
1.97
1.75
1.88
0.05
0.13
7.62
7.95
5.11
5.28
5.13
5.21
0.51
0.64
0
4
0.20
0.23
0.36
0.43
0
12
0
12
MIN
Number of Pins
Pitch
Overall Height
A
.080
.070
Molded Package Thickness
A2
.078
.069
Standoff
A1
.002
.010
Overall Width
E
.300
.325
Molded Package Width
E1
.201
.212
Overall Length
D
.202
.210
Foot Length
L
.020
.030
φ
Foot Angle
0
8
c
Lead Thickness
.008
.010
Lead Width
B
.014
.020
α
Mold Draft Angle Top
0
15
β
Mold Draft Angle Bottom
0
15
*Controlling Parameter
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not
exceed .010" (0.254mm) per side.
MAX
2.03
1.98
0.25
8.26
5.38
5.33
0.76
8
0.25
0.51
15
15
Drawing No. C04-056
DS21420D-page 14
 2004 Microchip Technology Inc.
TC4421/TC4422
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
PART NO.
Device
X
Temperature
Range
XX
XXX
X
Package
Tape & Reel
PB Free
Device:
TC4421:
TC4422:
Temperature Range:
C
E
V
Package:
AT
= TO-220, 5-lead (C-Temp Only)
MF
= Dual, Flat, No-Lead (6x5 mm Body), 8-lead
MF713 = Dual, Flat, No-Lead (6x5 mm Body), 8-lead
(Tape and Reel)
PA
= Plastic DIP (300 mil Body), 8-lead
SM
= Plastic SOIC (208 mil Body), 8-lead
SM713 = Plastic SOIC (208 mil Body), 8-lead
(Tape and Reel)
PB Free
G
9A High-Speed MOSFET Driver, Inverting
9A High-Speed MOSFET Driver, Non-Inverting
=
0°C to +70°C (PDIP and TO-220 Only)
= -40°C to +85°C
= -40°C to +125°C
Examples:
a)
TC4421CAT:
b)
TC4421ESMG: 9A High-Speed Inverting
MOSFET Driver,
PB Free SOIC package,
-40°C to +85°C.
c)
TC4421VMF:
9A High-Speed Inverting
MOSFET Driver,
DFN package,
-40°C to +125°C.
a)
TC4422VPA:
9A High-Speed
Non-Inverting MOSFET
Driver, PDIP package,
-40°C to +125°C.
b)
TC4422EPA:
9A High-Speed
Non-Inverting
MOSFET Driver,
PDIP package,
-40°C to +85°C.
c)
TC4422EMF:
9A High-Speed
Inverting MOSFET Driver,
DFN package,
-40°C to +85°C.
= Lead-Free device
= Blank
* Available on selected packages. Contact your local sales
representative for availability
9A High-Speed Inverting
MOSFET Driver,
TO-220 package,
0°C to +70°C.
Sales and Support
Data Sheets
Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and
recommended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following:
1.
2.
3.
Your local Microchip sales office
The Microchip Corporate Literature Center U.S. FAX: (480) 792-7277
The Microchip Worldwide Site (www.microchip.com)
Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using.
Customer Notification System
Register on our web site (www.microchip.com/cn) to receive the most current information on our products.
 2004 Microchip Technology Inc.
DS21420D-page 15
TC4421/TC4422
NOTES:
DS21420D-page 16
 2004 Microchip Technology Inc.
Note the following details of the code protection feature on Microchip devices:
•
Microchip products meet the specification contained in their particular Microchip Data Sheet.
•
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
•
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
•
Microchip is willing to work with the customer who is concerned about the integrity of their code.
•
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Information contained in this publication regarding device
applications and the like is intended through suggestion only
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
No representation or warranty is given and no liability is
assumed by Microchip Technology Incorporated with respect
to the accuracy or use of such information, or infringement of
patents or other intellectual property rights arising from such
use or otherwise. Use of Microchip’s products as critical
components in life support systems is not authorized except
with express written approval by Microchip. No licenses are
conveyed, implicitly or otherwise, under any intellectual
property rights.
Trademarks
The Microchip name and logo, the Microchip logo, Accuron,
dsPIC, KEELOQ, microID, MPLAB, PIC, PICmicro,
PICSTART, PRO MATE, PowerSmart, rfPIC, and
SmartShunt are registered trademarks of Microchip
Technology Incorporated in the U.S.A. and other countries.
AmpLab, FilterLab, MXDEV, MXLAB, PICMASTER, SEEVAL,
SmartSensor and The Embedded Control Solutions Company
are registered trademarks of Microchip Technology
Incorporated in the U.S.A.
Analog-for-the-Digital Age, Application Maestro, dsPICDEM,
dsPICDEM.net, dsPICworks, ECAN, ECONOMONITOR,
FanSense, FlexROM, fuzzyLAB, In-Circuit Serial
Programming, ICSP, ICEPIC, Migratable Memory, MPASM,
MPLIB, MPLINK, MPSIM, PICkit, PICDEM, PICDEM.net,
PICLAB, PICtail, PowerCal, PowerInfo, PowerMate,
PowerTool, rfLAB, rfPICDEM, Select Mode, Smart Serial,
SmartTel and Total Endurance are trademarks of Microchip
Technology Incorporated in the U.S.A. and other countries.
SQTP is a service mark of Microchip Technology Incorporated
in the U.S.A.
All other trademarks mentioned herein are property of their
respective companies.
© 2004, Microchip Technology Incorporated, Printed in the
U.S.A., All Rights Reserved.
Printed on recycled paper.
Microchip received ISO/TS-16949:2002 quality system certification for
its worldwide headquarters, design and wafer fabrication facilities in
Chandler and Tempe, Arizona and Mountain View, California in
October 2003. The Company’s quality system processes and
procedures are for its PICmicro® 8-bit MCUs, KEELOQ® code hopping
devices, Serial EEPROMs, microperipherals, nonvolatile memory and
analog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.
 2004 Microchip Technology Inc.
DS21420D-page 17
WORLDWIDE SALES AND SERVICE
AMERICAS
ASIA/PACIFIC
ASIA/PACIFIC
EUROPE
Corporate Office
2355 West Chandler Blvd.
Chandler, AZ 85224-6199
Tel: 480-792-7200
Fax: 480-792-7277
Technical Support:
480-792-7627
Web Address:
www.microchip.com
Australia - Sydney
Tel: 61-2-9868-6733
Fax: 61-2-9868-6755
India - Bangalore
Tel: 91-80-2229-0061
Fax: 91-80-2229-0062
China - Beijing
Tel: 86-10-8528-2100
Fax: 86-10-8528-2104
India - New Delhi
Tel: 91-11-5160-8632
Fax: 91-11-5160-8632
Austria - Weis
Tel: 43-7242-2244-399
Fax: 43-7242-2244-393
Denmark - Ballerup
Tel: 45-4420-9895
Fax: 45-4420-9910
China - Chengdu
Tel: 86-28-8676-6200
Fax: 86-28-8676-6599
Japan - Kanagawa
Tel: 81-45-471- 6166
Fax: 81-45-471-6122
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Tel: 33-1-69-53-63-20
Fax: 33-1-69-30-90-79
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Tel: 86-591-750-3506
Fax: 86-591-750-3521
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Tel: 82-2-554-7200
Fax: 82-2-558-5932 or
82-2-558-5934
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Tel: 31-416-690399
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Tel: 44-118-921-5869
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Tel: 949-462-9523
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Mountain View, CA
Tel: 650-215-1444
Fax: 650-961-0286
Toronto
Mississauga, Ontario,
Canada
Tel: 905-673-0699
Fax: 905-673-6509
08/24/04
DS21420D-page 18
 2004 Microchip Technology Inc.