Data Sheet

INTEGRATED CIRCUITS
DATA SHEET
UBA2030T
Full bridge driver IC
Product specification
Supersedes data of 1999 Aug 10
2002 Sep 27
Philips Semiconductors
Product specification
Full bridge driver IC
UBA2030T
FEATURES
GENERAL DESCRIPTION
• Full bridge driver
The UBA2030T is a high voltage integrated circuit
fabricated using the BCD750 power logic process. The
circuit is designed for driving the MOSFETs in a full bridge
configuration. In addition, it features a shut-down function,
an adjustable oscillator and a PMOS high voltage level
shifter to control the bridge enable function. To guarantee
an accurate 50% duty factor, the oscillator signal passes
through a divider before being fed to the output drivers.
• Integrated bootstrap diodes
• Integrated high voltage level shift function
• High voltage input (570 V maximum) for the internal
supply
• Adjustable ‘dead time’
• Adjustable oscillator frequency
• High voltage level shifter for the bridge enable function
• Shut-down function.
APPLICATIONS
• The UBA2030T can drive the MOSFETs in any type of
load configured as a full bridge
• The circuit is intended as a commutator for High
Intensity Discharge (HID) lamps.
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
UBA2030T
2002 Sep 27
SO24
DESCRIPTION
plastic small outline package; 24 leads; body width 7.5 mm
2
VERSION
SOT137-1
Philips Semiconductors
Product specification
Full bridge driver IC
UBA2030T
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
High voltage
VHV
high voltage supply
0
−
570
V
−
0.7
1.0
mA
14.0
15.5
17.0
V
11.5
13.0
14.5
V
Start-up; powered via pin HV
Istrtu
start-up current
Vth(oscstrt)
start oscillating threshold
voltage
Vth(oscstp)
stop oscillating threshold
voltage
at fbridge = 500 Hz; no load
Output drivers
Io(source)
output source current
VDD = VFSL = VFSR = 15 V;
VGHR = VGHL = VGLR = VGLL = 0 V
140
190
240
mA
Io(sink)
output sink current
VDD = VFSL = VFSR = 15 V;
VGHR = VGHL = VGLR = VGLL = 15 V
200
260
320
mA
EXO pin connected to SGND
50
−
50000
Hz
RC pin connected to SGND;
f osc(ext)
f bridge = ----------------2
100
−
100000 Hz
adjusted externally
0.4
−
4
µs
Internal oscillator
fbridge
bridge oscillating frequency
External oscillator
fosc(ext)
external oscillator frequency
Dead time control
tdead
dead time control range
Bridge enable
IIH
HIGH-level input current
bridge enable active
100
−
700
µA
IIL
LOW-level input current
bridge enable not active
0
−
20
µA
Shut-down
VIH
HIGH-level input voltage
∆V SD
shut-down active; ------------- > 5 V/ms
∆t
4.5
−
VDD
V
VIL
LOW-level input voltage
shut-down not active;
∆V SD
-------------- > 5 V/ms
∆t
0
−
0.5
V
2002 Sep 27
3
Philips Semiconductors
Product specification
Full bridge driver IC
UBA2030T
BLOCK DIAGRAM
handbook, full pagewidth
HV
18
BER
BE
8
7
10
HIGHER LEFT
DRIVER
11
12
15
BRIDGE ENABLE
HIGHER RIGHT
DRIVER
HIGH VOLTAGE
LEVEL SHIFTER
14
13
OSCILLATOR
UBA2030T
LOWER LEFT
DRIVER
÷2
LOW VOLTAGE
SUPPLY
24
2
5
20
22
LOWER RIGHT
DRIVER
LOW VOLTAGE
LEVEL SHIFTER
LOGIC
23
3
1
4, 6, 9, 16, 17, 19
21
MGK590
SGND
VDD
RC EXO
DTC
n.c.
SD
Fig.1 Block diagram.
2002 Sep 27
4
FSL
GHL
SHL
FSR
GHR
SHR
GLL
PGND
GLR
Philips Semiconductors
Product specification
Full bridge driver IC
UBA2030T
PINNING
SYMBOL
PIN
DESCRIPTION
GLR
1
gate of lower right MOSFET
PGND
2
power ground for sources of lower
left and right MOSFETs
GLL
3
gate of lower left MOSFET
n.c.
4
not connected
RC
5
RC input for internal oscillator
n.c.
6
not connected
BE
7
bridge enable control input
BER
8
n.c.
handbook, halfpage
GLR
1
24 SGND
PGND
2
23 VDD
GLL
3
22 DTC
bridge enable reference input
n.c.
4
21 SD
9
not connected
RC
5
20 EXO
FSL
10
floating supply voltage left side
n.c.
6
GHL
11
gate of higher left MOSFET
SHL
12
source of higher left MOSFET
SHR
13
source of higher right MOSFET
GHR
14
gate of higher right MOSFET
FSR
15
floating supply voltage right side
n.c.
16
n.c.
19 n.c.
UBA2030T
BE
7
18 HV
BER
8
17 n.c.
n.c.
9
16 n.c.
FSL 10
15 FSR
not connected
GHL 11
14 GHR
17
not connected
SHL 12
13 SHR
HV
18
high voltage supply
n.c.
19
not connected
EXO
20
external oscillator input
SD
21
shut-down input
DTC
22
‘dead time’ control input
VDD
23
internal (low voltage) supply
SGND
24
signal ground
2002 Sep 27
MGK589
Fig.2 Pin configuration.
5
Philips Semiconductors
Product specification
Full bridge driver IC
UBA2030T
When an external oscillator is used, its output must be
connected to the EXO pin; the internal oscillator must be
disabled by connecting the RC pin to SGND. The bridge
commutating frequency is half the oscillator frequency due
to a ÷2 circuit which guarantees an accurate 50% duty
factor.
FUNCTIONAL DESCRIPTION
Supply voltage
The UBA2030T is powered by a single supply voltage
connected to the HV pin (the full bridge supply could be
used, for example). The IC generates its own low voltage
supply for driving the internal circuitry and the MOSFETs
in the full bridge, removing the need for an additional low
voltage supply. A capacitor must be connected between
the VDD pin and SGND to obtain a ripple-free internal
supply voltage.
The time between turning off the conducting pair of
MOSFETs and turning on the other pair, the ‘dead time’,
can be adjusted using an external resistor. If the supply
voltage at the HV pin falls below the ‘stop oscillating
threshold’, the UBA2030T re-enters the start-up phase.
Start-up
Bridge enable
When the power is turned on, the UBA2030T enters a
start-up phase; the high side MOSFETs are switched off
and the low side MOSFETs switched on. During start-up,
the bootstrap capacitors are charged and the bridge output
current is zero.
The bridge enable function allows the bridge to be held in
its current state. When active, it connects the RC pin to
SGND, disabling the internal oscillator. If the bridge enable
function is activated during ‘dead time’, the bridge is
allowed to enter the next conducting state before being
held. Oscillations resume the instant the bridge enable
function is turned off. A timing diagram is shown in Fig.3.
Oscillation
At the point where the supply voltage at the HV pin crosses
the ‘start oscillating threshold’, the bridge begins
commutating between the following two defined states:
To hold the bridge, an external control circuit is required to
provide a source current to the bridge enable control input
(pin BE), and to supply a reference voltage to pin BER
(see Fig.6).
• Higher left and lower right MOSFETs on and higher right
and lower left MOSFETs off
• Higher left and lower right MOSFETs off and higher right
and lower left MOSFETs on.
Shut-down
The active HIGH shut-down input (pin SD) can be used at
any time to turn off all four MOSFETs. However, if the
supply voltage drops below the ‘stop oscillating threshold’,
the bridge re-enters the start-up phase even if the
shut-down function is active.
When the internal oscillator is used, the bridge
commutating frequency is determined by the values of an
external resistor and capacitor. In this mode, the EXO pin
must be connected to SGND.
2002 Sep 27
6
Philips Semiconductors
Product specification
Full bridge driver IC
handbook, full pagewidth
UBA2030T
on
VBE
off
VRC
VGHL
VGLR
VGHR
VGLL
time
MGK594
dead time
Fig.3 Timing diagram.
2002 Sep 27
7
Philips Semiconductors
Product specification
Full bridge driver IC
UBA2030T
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
VDD
supply voltage (low voltage)
VHV
supply voltage (high voltage)
CONDITIONS
VFSL, VFSR floating supply voltage
VSHL, VSHR source voltage for higher right and left
MOSFETs
VPGND
power ground voltage
Vi(BER)
bridge enable reference input voltage
Vi(BE)
bridge enable control input voltage
MIN.
MAX.
UNIT
0
18
V
note 1
0
570
V
VSHL = VSHR = 570 V, note 1
570
588
V
VSHL = VSHR = 0 V
0
18
V
with reference to PGND and SGND
−10
+570
V
with reference to SGND
−7
+10
V
0
570
V
Vi(BER) = 570 V
570
580
V
Vi(BER) = 0 V
0
10
V
Ii(BE)
bridge enable control input current
0
700
µA
Vi(EXO)
input voltage from external oscillator
on pin EXO
0
VDD
V
Vi(SD)
shut-down input voltage on pin SD
0
VDD
V
SR
slew rate at output pins
−4
+4
V/ns
Tj
junction temperature
−40
+150
°C
Tamb
ambient temperature
−40
+150
°C
Tstg
storage temperature
−55
+150
°C
Vesd
electrostatic discharge voltage
pin HV
−1250
+1250 V
pins BE, BER, FSL, GHL, SHL,
SHR, GHR and FSR
−1500
+1500 V
repetitive
note 2
Notes
1. This value is guaranteed down to Tj = −25 °C. From Tj = −25 to −40 °C, the voltage on pin HV is limited to 530 V and
the floating supply voltage (VFSL, VFSR) is limited to a maximum value of 548 V.
2. In accordance with the human body model: equivalent to discharging a 100 pF capacitor through a 1.5 kΩ series
resistor.
THERMAL CHARACTERISTICS
SYMBOL
Rth(j-a)
PARAMETER
thermal resistance from junction to ambient
QUALITY SPECIFICATION
In accordance with “General Quality Specifications for Integrated Circuits SNW-FQ-611D”.
2002 Sep 27
8
VALUE
UNIT
70
K/W
Philips Semiconductors
Product specification
Full bridge driver IC
UBA2030T
CHARACTERISTICS
Tj = 25 °C; all voltages with respect to PGND; positive currents flow into the IC.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
High voltage
VHV
high voltage supply
IL
leakage current
VPGND(float),
VSGND(float)
floating ground voltage
with 570 V applied to pins BER,
SHR and SHL
0
−
570
V
−
−
5
µA
0
−
5
V
Start-up, powered via the HV pin; note 1
Istrtu
start-up current
−
0.7
1.0
mA
Vstrtu
start-up voltage
high left and right MOSFETs off; low −
left and right MOSFETs on
6
−
V
Vth(oscstrt)
start oscillating threshold
voltage
fbridge = 500 Hz; no load
14.0
15.5
17.0
V
Vth(oscstp)
stop oscillating threshold
voltage
11.5
13.0
14.5
V
Vhys
hysteresis voltage
2.0
2.5
3.0
V
IHV
supply current
fbridge = 500 Hz; no load; VHV = 50 V 0.3
0.5
0.7
mA
VDD
internal supply voltage (low
voltage)
fbridge = 500 Hz; no load; VHV = 50 V 14.0
15.3
16.5
V
fbridge = 500 Hz; no load; at start
oscillating threshold
10.5
11
11.5
V
fbridge = 500 Hz; no load; at stop
oscillating threshold
8.0
8.5
9.0
V
between oscillation start and stop
levels
Output drivers
Vo(GHL),
Vo(GHR)
output voltage on pins GHL at power-up; no load; VHV = 50 V;
and GHR for gates of higher fbridge = 500 Hz
right and left MOSFETs
13.2
14.5
16.5
V
Vo(GLL),
Vo(GLR)
output voltage on pins GLL
and GLR for gates of lower
right and left MOSFETs
14.0
15.3
16.5
V
∆t
time difference between
diagonally placed output
drivers
0
−
100
ns
Ron(HL),
Ron(HR)
higher MOSFETs on
resistance
VFSR = VFSL = 15 V; Isource = 50 mA
33
39
46
Ω
Roff(HL),
Roff(HR)
higher MOSFETs off
resistance
VFSR = VFSL = 15 V; Isink = 50 mA
11
14
17
Ω
Ron(LL),
Ron(LR)
lower MOSFETs on
resistance
VDD = 15 V; Isource = 50 mA
33
39
46
Ω
Roff(LL),
Roff(LR)
lower MOSFETs off
resistance
VDD = 15 V; Isink = 50 mA
11
14
17
Ω
Vdiode
bootstrap diode voltage
drop
Idiode = 1 mA
0.8
1.0
1.2
V
2002 Sep 27
9
Philips Semiconductors
Product specification
Full bridge driver IC
SYMBOL
UBA2030T
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Io(source)
output source current
VDD = VFSL = VFSR = 15 V;
VGHR = VGHL = VGLR = VGLL = 0 V
140
190
240
mA
Io(sink)
output sink current
VDD = VFSL = VFSR = 15 V;
VGHR = VGHL = VGLR = VGLL = 15 V
200
260
320
mA
IFSL(float),
IFSR(float)
floating supply current
VFSL = VFSR = 15 V
−
15
−
µA
Internal oscillator; notes 2 and 3
fbridge
bridge oscillating frequency
EXO pin connected to SGND
50
−
50000
Hz
∆fosc/∆T
oscillator frequency
dependency with respect to
temperature
fixed RC; ∆T = −40 °C to +150 °C
0
−
10
%
∆fosc/∆VDD
oscillator frequency
dependency with respect to
VDD
fixed RC; ∆VDD = 12 to 16 V
0
−
10
%
kH
HIGH-level trip point
VRCH = kH × VDD
0.67
0.71
0.75
kL
LOW-level trip point
VRCL = kL × VDD
−
0.01
−
kosc
oscillator constant
1
f bridge = --------------------------------------------k osc × R osc × C osc
2.34
2.49
2.64
100
−
100000 Hz
External oscillator; note 2
fosc(ext)
external oscillator frequency RC pin connected to SGND;
f osc(ext)
f bridge = ----------------2
VIH
HIGH-level input voltage
∆V EXO
----------------- > 5 V/ms
∆t
4.5
−
VDD
V
VIL
LOW-level input voltage
∆V EXO
----------------- > 5 V/ms
∆t
0
−
0.5
V
Ii(EXO)
input current
0
−
50
µA
0.4
−
4
µs
180
270
380
kΩ/µs
bridge enable active
100
−
700
µA
note 6
−
1.1
−
mA
0
−
20
µA
with reference to HV
2.1
2.6
3.0
V
with reference to PGND
3.5
5.5
7.5
V
Dead time control; notes 2 and 4
tdead
dead time control range
kDT
dead time variable
adjusted externally
Bridge enable; notes 2 and 5
IIH
HIGH-level input current
IIL
LOW-level input current
bridge enable not active
VBE − VBER
threshold voltage:
IIH = 100 µA
2002 Sep 27
10
Philips Semiconductors
Product specification
Full bridge driver IC
SYMBOL
PARAMETER
UBA2030T
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Shut-down; note 2
VIH
HIGH-level input voltage
∆V SD
shut-down active; ------------- > 5 V/ms
∆t
4.5
−
VDD
V
VIL
LOW-level input voltage
shut-down not active;
∆V SD
-------------- > 5 V/ms
∆t
0
−
0.5
V
Ii(SD)
input current
0
−
50
µA
Notes
1. The current into pin HV is internally limited to 15 mA at Tj = 25 °C and to 10 mA at Tj = 150 °C.
2. VDD = 15 V.
3. The internal ÷2 circuit requires the frequency of the internal or external oscillator to be twice the bridge frequency.
When the internal oscillator is used, the bridge frequency can be adjusted using an external resistor and capacitor:
1
f bridge = -------------------------------------------2.8 × R osc × C osc
where Rosc(min) = 200 kΩ and Rosc(max) = 2 MΩ with low leakage current.
4. The ‘dead time’ is adjusted using an external resistor (RDT) connected between pins DTC and SGND. The value is
calculated as: RDT = 270 x tdead − 70, where the units are kΩ for RDT and µs for tdead. The minimum value
RDT(min) = 50 kΩ and the maximum value RDT(max) = 1 MΩ.
5. This function is disabled when using an external oscillator.
6. IIH < 2.1 mA when the condition is VBE − VBER = 5 V at Tj = 150 °C.
2002 Sep 27
11
Philips Semiconductors
Product specification
Full bridge driver IC
UBA2030T
APPLICATION INFORMATION
When the internal oscillator is used, the bridge
commutating frequency is determined by the values of
Rosc and Cosc. The bridge starts oscillating when the HV
supply voltage exceeds the ‘start oscillating threshold’
(typically 15.5 V). If the supply voltage at the HV pin falls
below the ‘stop oscillating threshold’ (typically 13 V), the
UBA2030T enters the start-up state.
Basic application
A basic full bridge configuration with an HID lamp is shown
in Fig.4. The bridge enable and shut-down functions are
not used in this application. The EXO, BE, BER and
SD pins are connected to system ground. The IC is
powered by the high voltage supply.
handbook, full pagewidth
high voltage
570 V (max)
SHR
GHR
C2
FSR
HV
EXO
SD
Ci
DTC
VDD
SGND
C3
13
12
14
11
15
10
18
8
20 UBA2030T 7
21
5
22
3
23
2
24
1
GHL
FSL
BER
C1
IGNITOR
BE
LAMP
LL
RC
LR
C4
GLL
C5
PGND
GLR
RDT
Cosc
Rosc
system
ground
Fig.4 Basic configuration.
2002 Sep 27
HR
HL
SHL
12
MGK592
Philips Semiconductors
Product specification
Full bridge driver IC
UBA2030T
Application with external control
The bridge commutation frequency is determined by the
external oscillator. The shut-down input (pin SD) can be
used to quickly turn off all four MOSFETs in the full bridg
Figure 5 shows an application containing an external
oscillator control circuit referenced to system ground.
The RC, BER and BE pins are connected to system
ground.
high full
voltage
handbook,
pagewidth
570 V (max)
SHR
GHR
C2
FSR
HV
Ci
EXO
EXTERNAL
OSCILLATOR
CONTROL
CIRCUIT
SD
DTC
VDD
SGND
C3
13
12
14
11
15
10
18
8
20 UBA2030T 7
21
5
22
3
23
2
24
1
GHL
FSL
BER
C1
IGNITOR
BE
RC
LAMP
LL
GLL
LR
C4
C5
PGND
GLR
RDT
MGK593
system
ground
Fig.5 External control configuration.
2002 Sep 27
HR
HL
SHL
13
Philips Semiconductors
Product specification
Full bridge driver IC
UBA2030T
Automotive application
Figure 6 shows a full bridge with an HID lamp in an
automotive environment, and a control circuit referenced
to the high side of the bridge. The BER and HV pins are
connected to system ground. The bridge can be held in its
current state using the BE pin. See the timing diagram in
Fig.3.
The life of an HID lamp depends on the rate of sodium
migration through its quartz wall. To minimize this, the
lamp must be operated negative with respect to system
ground.
handbook, full pagewidth
CONTROL
UNIT
system
ground
SHR
GHR
C2
FSR
HV
EXO
SD
Ci
DTC
VDD
SGND
C3
13
12
14
11
15
10
18
8
20 UBA2030T 7
21
5
22
3
23
2
24
1
GHL
FSL
BER
C1
IGNITOR
BE
LAMP
LL
RC
LR
C4
GLL
C5
PGND
GLR
RDT
Cosc
Rosc
high voltage
−570 V (max)
Fig.6 Automotive configuration (example 1).
2002 Sep 27
HR
HL
SHL
14
MGK591
Philips Semiconductors
Product specification
Full bridge driver IC
UBA2030T
Additional application information
The diode in series with the supply to pin HV prevents Ci
being discharged if the lamp is shorted during the ignition
phase. C6 should be positioned as close as possible to
pin DTC. The control unit drives the MOSFETs relatively
hard which can cause radiation. To prevent switching the
MOSFETs hard, a resistor can be connected in series with
each gate.
The UBA2030T is the commutator part in a complete
system for driving an HID lamp. The life of the HID lamp
can depend on the amount of sodium that migrates
through its quartz wall. To minimize this migration, the
lamp must be operated negative with respect to system
ground.
In all applications, the voltage on pin HV must not be
allowed to become lower than the voltage at pin VDD
during the start-up phase or during normal operation,
otherwise the full bridge will not operate correctly. During
the start-up phase, pin EXO and pin SD should both be
LOW. The voltage as a function of time at pin EXO and
pin SD should be >5 V/ms.
Figure 7 shows a full bridge with an HID lamp in a typical
automotive configuration using a control unit referenced to
the high side of the bridge. Pin BER is connected to
system ground. The bridge can be held in its current state
by pin BE. The supply current to the internal low voltage
circuit is fed to pin HV which can be connected to either
system ground or to a low voltage DC supply, such as a
battery, as indicated by the dotted lines in Fig.7.
from
low
handbook,
fullvoltage
pagewidth
DC supply
CONTROL
UNIT
system
ground
SHR
GHR
C2
FSR
HV
EXO
Ci
SD
Ci
DTC
VDD
SGND
C6
C3
13
12
14
11
15
10
18
8
20 UBA2030T 7
21
5
22
3
23
2
24
1
RDT
GHL
FSL
BER
C1
IGNITOR
BE
RC
LR
C4
GLL
C5
PGND
GLR
Cosc
Rosc
C1 = 150 nF.
C2 = 150 nF.
C3 = 220 nF.
C6 = 100 pF.
Cosc = 10 nF.
Rosc = 147 kΩ.
RDT = 50 to 1000 kΩ (220 kΩ results in a ‘dead time’ of 1 µs).
Fig.7 Automotive configuration (example 2).
15
LAMP
LL
high voltage
−570 V (max)
2002 Sep 27
HR
HL
SHL
MGL763
Philips Semiconductors
Product specification
Full bridge driver IC
UBA2030T
PACKAGE OUTLINE
SO24: plastic small outline package; 24 leads; body width 7.5 mm
SOT137-1
D
E
A
X
c
HE
y
v M A
Z
13
24
Q
A2
A
(A 3)
A1
pin 1 index
θ
Lp
L
1
12
e
detail X
w M
bp
0
5
10 mm
scale
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
UNIT
A
max.
A1
A2
A3
bp
c
D (1)
E (1)
e
HE
L
Lp
Q
v
w
y
mm
2.65
0.30
0.10
2.45
2.25
0.25
0.49
0.36
0.32
0.23
15.6
15.2
7.6
7.4
1.27
10.65
10.00
1.4
1.1
0.4
1.1
1.0
0.25
0.25
0.1
0.9
0.4
inches
0.10
0.012 0.096
0.004 0.089
0.01
0.019 0.013
0.014 0.009
0.61
0.60
0.30
0.29
0.050
0.419
0.043
0.055
0.394
0.016
0.043
0.039
0.01
0.01
0.004
0.035
0.016
Z
(1)
θ
8o
0o
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
REFERENCES
OUTLINE
VERSION
IEC
JEDEC
SOT137-1
075E05
MS-013
2002 Sep 27
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-05-22
99-12-27
16
Philips Semiconductors
Product specification
Full bridge driver IC
UBA2030T
SOLDERING
If wave soldering is used the following conditions must be
observed for optimal results:
Introduction to soldering surface mount packages
• Use a double-wave soldering method comprising a
turbulent wave with high upward pressure followed by a
smooth laminar wave.
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our “Data Handbook IC26; Integrated Circuit Packages”
(document order number 9398 652 90011).
• For packages with leads on two sides and a pitch (e):
– larger than or equal to 1.27 mm, the footprint
longitudinal axis is preferred to be parallel to the
transport direction of the printed-circuit board;
There is no soldering method that is ideal for all surface
mount IC packages. Wave soldering can still be used for
certain surface mount ICs, but it is not suitable for fine pitch
SMDs. In these situations reflow soldering is
recommended.
– smaller than 1.27 mm, the footprint longitudinal axis
must be parallel to the transport direction of the
printed-circuit board.
Reflow soldering
The footprint must incorporate solder thieves at the
downstream end.
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
• For packages with leads on four sides, the footprint must
be placed at a 45° angle to the transport direction of the
printed-circuit board. The footprint must incorporate
solder thieves downstream and at the side corners.
Several methods exist for reflowing; for example,
convection or convection/infrared heating in a conveyor
type oven. Throughput times (preheating, soldering and
cooling) vary between 100 and 200 seconds depending
on heating method.
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
Typical reflow peak temperatures range from
215 to 250 °C. The top-surface temperature of the
packages should preferable be kept below 220 °C for
thick/large packages, and below 235 °C for small/thin
packages.
Typical dwell time is 4 seconds at 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
Manual soldering
Wave soldering
Fix the component by first soldering two
diagonally-opposite end leads. Use a low voltage (24 V or
less) soldering iron applied to the flat part of the lead.
Contact time must be limited to 10 seconds at up to
300 °C.
Conventional single wave soldering is not recommended
for surface mount devices (SMDs) or printed-circuit boards
with a high component density, as solder bridging and
non-wetting can present major problems.
When using a dedicated tool, all other leads can be
soldered in one operation within 2 to 5 seconds between
270 and 320 °C.
To overcome these problems the double-wave soldering
method was specifically developed.
2002 Sep 27
17
Philips Semiconductors
Product specification
Full bridge driver IC
UBA2030T
Suitability of surface mount IC packages for wave and reflow soldering methods
SOLDERING METHOD
PACKAGE(1)
WAVE
BGA, LBGA, LFBGA, SQFP, TFBGA, VFBGA
not suitable
suitable(3)
HBCC, HBGA, HLQFP, HSQFP, HSOP, HTQFP, HTSSOP, HVQFN,
HVSON, SMS
not
PLCC(4), SO, SOJ
suitable
LQFP, QFP, TQFP
SSOP, TSSOP, VSO
REFLOW(2)
suitable
suitable
suitable
not
recommended(4)(5)
suitable
not
recommended(6)
suitable
Notes
1. For more detailed information on the BGA packages refer to the “(LF)BGA Application Note” (AN01026); order a copy
from your Philips Semiconductors sales office.
2. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum
temperature (with respect to time) and body size of the package, there is a risk that internal or external package
cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the
Drypack information in the “Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”.
3. These packages are not suitable for wave soldering. On versions with the heatsink on the bottom side, the solder
cannot penetrate between the printed-circuit board and the heatsink. On versions with the heatsink on the top side,
the solder might be deposited on the heatsink surface.
4. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction.
The package footprint must incorporate solder thieves downstream and at the side corners.
5. Wave soldering is suitable for LQFP, TQFP and QFP packages with a pitch (e) larger than 0.8 mm; it is definitely not
suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.
6. Wave soldering is suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is
definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.
2002 Sep 27
18
Philips Semiconductors
Product specification
Full bridge driver IC
UBA2030T
DATA SHEET STATUS
DATA SHEET STATUS(1)
PRODUCT
STATUS(2)
DEFINITIONS
Objective data
Development
This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary data
Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DEFINITIONS
DISCLAIMERS
Short-form specification  The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Life support applications  These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes  Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2002 Sep 27
19
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: [email protected].
SCA74
© Koninklijke Philips Electronics N.V. 2002
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613502/03/pp20
Date of release: 2002
Sep 27
Document order number:
9397 750 10256