BC857BLP4 45V PNP SMALL SIGNAL TRANSISTOR IN DFN1006 Features Mechanical Data BVCEO > -45V IC = -100mA High Collector Current PD = 1000mW Power Dissipation 0.60mm2 Package Footprint, 13 times Smaller than SOT23 0.4mm Height Package Minimizing Off-Board Profile Complementary NPN Type BC847BLP4 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Case: X2-DFN1006-3 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish NiPdAu. Solderable per MIL-STD-202, Method 208 e4 Weight: 0.0008 grams (Approximate) C X2-DFN1006-3 B B C E E Bottom View Top View Device Schematic Device Symbol Ordering Information (Note 4) Product BC857BLP4-7 BC857BLP4-7B Notes: Marking F2 F2 Reel size (inches) 7 7 Tape width (mm) 8 8 Quantity per reel 3,000 10,000 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com. Marking Information From date code 1527 (YYWW), this changes to: Top View Dot Denotes Collector Side F2 F2 F2 F2 Top View Bar Denotes Base and Emitter Side F2 BC857BLP4-7 F2 F2 F2 F2 BC857BLP4 Document number: DS31361 Rev. 6 - 2 F2 = Product Type Marking Code F2 F2 Top View Bar Denotes Base and Emitter Side F2 BC857BLP4-7B 1 of 5 www.diodes.com May 2015 © Diodes Incorporated BC857BLP4 Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Peak Pulse Collector Current Symbol VCBO VCEO VEBO IC ICM Value -50 -45 -5.0 -100 -200 Unit V V V mA mA Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Power Dissipation Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Lead (Note 5) (Note 6) (Note 5) (Note 6) Symbol RJA Value 400 1000 310 120 (Note 7) RJL 120 °C/W TJ, TSTG -55 to +150 °C PD Operating and Storage and Temperature Range Unit mW C/W ESD Ratings (Note 8) Characteristic Electrostatic Discharge - Human Body Model Electrostatic Discharge - Machine Model Electrical Characteristics Symbol ESD HBM ESD MM Value 4,000 200 Unit V V (@TA = +25°C, unless otherwise specified.) Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 9) Emitter-Base Breakdown Voltage DC Current Gain Symbol BVCBO BVCEO BVEBO hFE Min -50 -45 -5 220 Typ — — — 300 -90 -250 Max — — — 475 -300 -650 Collector-Emitter Saturation Voltage (Note 9) VCE(SAT) — Base-Emitter Saturation Voltage (Note 9) VBE(SAT) — — -700 -850 — — mV Base-Emitter Voltage (Note 9) VBE(ON) -600 — -670 -710 -750 -820 mV Collector-Cutoff Current ICBO — — — — -15 -4.0 nA µA Gain Bandwidth Product fT 100 — — MHz CCBO — 3.0 — pF Collector-Base Capacitance Notes: JEDEC Class 3A B Unit V V V — mV Test Condition IC = 10µA, IB = 0 IC = 10mA, IB = 0 IE = 1µA, IC = 0 VCE = -5.0V, IC = -2.0mA IC = -10mA, IB = -0.5mA IC = -100mA, IB = -5.0mA IC = -10mA, IB = -0.5mA IC = -100mA, IB = -5.0mA VCE = -5.0V, IC = -2.0mA VCE = -5.0V, IC = -10mA VCB = -30V VCB = -30V, TA = +150°C VCE = -5.0V, IC = -10mA, f = 100MHz VCB = -10V, f = 1.0MHz 5. For the device mounted on minimum recommended pad layout 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air conditions whilst operating in steady state condition. The entire exposed collector pad is attached to the heatsink. 6. Same as Note 5, except the exposed collector pad is mounted on 25mm x 25mm 2oz copper. 7. Thermal resistance from junction to solder-point (on the exposed collector pad). 8. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%. BC857BLP4 Document number: DS31361 Rev. 6 - 2 2 of 5 www.diodes.com May 2015 © Diodes Incorporated BC857BLP4 Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.) -IC, COLLECTOR CURRENT (A) 100 500 IB = -0.5mA 400 80 IB = -0.4mA 60 300 IB = -0.3mA IB = -0.2mA 40 200 IB = -0.1mA 20 100 0 0 1 2 3 4 5 -V CE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 2 Typical Collector Current vs. Collector-Emitter Voltage 1.0 0.8 0.6 0.4 0.2 0 0.1 1 10 100 IC, COLLECTOR CURRENT (A) Fig. 5 Typical Base-Emitter Turn-On Voltage vs. Collector Current BC857BLP4 Document number: DS31361 Rev. 6 - 2 1 VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V) 0 0.1 10 100 1,000 1 10 100 IC, COLLECTOR CURRENT (A) Fig. 6 Typical Base-Emitter Saturation Voltage vs. Collector Current 3 of 5 www.diodes.com May 2015 © Diodes Incorporated BC857BLP4 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. X2-DFN1006-3 Dim Min Max Typ A 0.40 A1 0 0.05 0.02 b1 0.10 0.20 0.15 b2 0.45 0.55 0.50 D 0.95 1.075 1.00 E 0.55 0.675 0.60 e 0.35 L1 0.20 0.30 0.25 L2 0.20 0.30 0.25 L3 0.40 All Dimensions in mm A A1 D b1 E e b2 L2 L3 L1 Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. C X1 X G2 Dimensions Z G1 G2 X X1 Y C Value (in mm) 1.1 0.3 0.2 0.7 0.25 0.4 0.7 G1 Y Z BC857BLP4 Document number: DS31361 Rev. 6 - 2 4 of 5 www.diodes.com May 2015 © Diodes Incorporated BC857BLP4 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2015, Diodes Incorporated www.diodes.com BC857BLP4 Document number: DS31361 Rev. 6 - 2 5 of 5 www.diodes.com May 2015 © Diodes Incorporated