BC847BLP 45V NPN SMALL SIGNAL TRANSISTOR IN DFN1006 Features Mechanical Data BVCEO > 45V IC = 100mA High Collector Current PD = 1000mW Power Dissipation 0.60mm2 Package Footprint, 13 times Smaller than SOT23 0.5mm Height Package Minimizing Off-Board Profile Complementary PNP Type BC857BLP Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Case: X1-DFN1006-3 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish NiPdAu. Solderable per MIL-STD-202, Method 208 e4 Weight: 0.0009 grams (Approximate) C X1-DFN1006-3 B B C E E Bottom View Top View Device Schematic Device Symbol Ordering Information (Note 4) Product BC847BLP-7 BC847BLP-7B Notes: Marking 1F 1F Reel size (inches) 7 7 Tape width (mm) 8mm 8mm Quantity per reel 3,000 10,000 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com. Marking Information From date code 1527 (YYWW), this changes to: Top View Bar Denotes Base and Emitter Side 1F 1F 1F 1F Top View Dot Denotes Collector Side 1F BC847BLP-7 1F 1F 1F 1F BC847BLP Document number: DS30525 Rev. 12 - 2 1F = Product Type Marking Code 1F 1F Top View Bar Denotes Base and Emitter Side 1F BC847BLP-7B 1 of 5 www.diodes.com May 2015 © Diodes Incorporated BC847BLP Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Peak Pulse Collector Current Symbol VCBO VCEO VEBO IC ICM Value 50 45 6.0 100 200 Unit V V V mA mA Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Power Dissipation Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Lead (Note 5) (Note 6) (Note 5) (Note 6) Symbol RJA Value 400 1,000 310 120 (Note 7) RJL 120 °C/W TJ, TSTG -55 to +150 °C PD Operating and Storage and Temperature Range Unit mW C/W ESD Ratings (Note 8) Characteristic Electrostatic Discharge - Human Body Model Electrostatic Discharge - Machine Model Electrical Characteristics Symbol ESD HBM ESD MM Value 4,000 200 Unit V V (@TA = +25°C, unless otherwise specified.) Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 9) Emitter-Base Breakdown Voltage DC Current Gain Symbol BVCBO BVCEO BVEBO hFE Min 50 45 6 200 Typ — — — 350 80 200 Max — — — 450 250 600 Collector-Emitter Saturation Voltage (Note 9) VCE(sat) — Base-Emitter Saturation Voltage (Note 9) VBE(sat) — — 700 900 — — mV Base-Emitter Voltage (Note 9) VBE(ON) 580 — 640 725 700 770 mV Collector-Cutoff Current ICBO — — — — 15 5.0 nA µA Gain Bandwidth Product fT 100 — — MHz CCBO — 3.0 — pF Collector-Base Capacitance Notes: JEDEC Class 3A B Unit V V V — mV Test Condition IC = 100µA, IB = 0 IC = 10mA, IB = 0 IE = 100µA, IC = 0 VCE = 5.0V, IC = 2.0mA IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5.0mA IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5.0mA VCE = 5.0V, IC = 2.0mA VCE = 5.0V, IC = 10mA VCB = 30V VCB = 30V, TA = +150°C VCE = 5.0V, IC = 10mA, f = 100MHz VCB = 10V, f = 1.0MHz 5. For the device mounted on minimum recommended pad layout 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air conditions whilst operating in steady state condition. The entire exposed collector pad is attached to the heatsink. 6. Same as Note 5, except the exposed collector pad is mounted on 25mm x 25mm 2oz copper. 7. Thermal resistance from junction to solder-point (on the exposed collector pad). 8. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%. BC847BLP Document number: DS30525 Rev. 12 - 2 2 of 5 www.diodes.com May 2015 © Diodes Incorporated BC847BLP IC/IB = 20 V(CE)SAT, COLLECTOR-EMITTER SATURATION VOLTAGE (mV) 300 250 200 TA = 125ºC 150 TA = 85ºC TA = 150ºC 100 TA = -55ºC 50 TA = 25ºC 0 10 100 IC, COLLECTOR CURRENT (mA) Fig. 2 Typical Collector-Emitter Saturation Voltage vs. Collector Current 1 hFE, DC CURRENT GAIN 1,000 100 10 1 0.1 100 10 1,000 IC, COLLECTOR CURRENT (mA) Fig. 5 Typical DC Current Gain vs. Collector Current 1 BC847BLP Document number: DS30525 Rev. 12 - 2 V(BE)SAT, BASE-EMITTER SATURATION VOLTAGE (V) 350 VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (mV) Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.) 1,000 TA = -55ºC 800 TA = 25ºC TA = 85ºC 600 400 TA = 150ºC TA = 125ºC 200 VCE = 5V 0 0 4 6 8 2 IC, COLLECTOR CURRENT (mA) Fig. 3 Typical Base-Emitter Turn-On Voltage vs. Collector Current 10 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 1 3 of 5 www.diodes.com 10 100 IC, COLLECTOR CURRENT (mA) Fig. 4 Typical Base-Emitter Saturation Voltage vs. Collector Current May 2015 © Diodes Incorporated BC847BLP Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. A A1 X1-DFN1006-3 Dim Min Max Typ A 0.47 0.53 0.50 A1 0.00 0.05 0.03 b 0.10 0.20 0.15 b2 0.45 0.55 0.50 D 0.95 1.075 1.00 E 0.55 0.675 0.60 e 0.35 L1 0.20 0.30 0.25 L2 0.20 0.30 0.25 L3 0.40 z 0.02 0.08 0.05 All Dimensions in mm Seating Plane D b Pin #1 ID e E b2 z L3 L2 L1 Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. C Y Dimensions C G1 G2 X X1 Y Y1 Y1 G2 X Value (in mm) 0.70 0.30 0.20 0.40 1.10 0.25 0.70 G1 X1 BC847BLP Document number: DS30525 Rev. 12 - 2 4 of 5 www.diodes.com May 2015 © Diodes Incorporated BC847BLP IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2015, Diodes Incorporated www.diodes.com BC847BLP Document number: DS30525 Rev. 12 - 2 5 of 5 www.diodes.com May 2015 © Diodes Incorporated