DSS2540M 40V NPN LOW VCE(sat) TRANSISTOR Features Mechanical Data BVCEO > 40V IC = 500mA High Collector Current ICM = 1A Peak Pulse Current PD = 1000mW Power Dissipation Low Collector-Emitter Saturation Voltage, VCE(sat) 0.60mm2 Package Footprint, 13 times Smaller than SOT23 0.5mm Height Package Minimizing Off-Board Profile Complementary NPN Type DSS3540M Totally Lead Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Case: X1-DFN1006-3 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish NiPdAu. Solderable per MIL-STD-202, Method 208 e4 Weight: 0.0009 grams (Approximate) C X1-DFN1006-3 B B C E E Bottom View Top View Device Schematic Device Symbol Ordering Information (Note 4) Product DSS2540M-7 DSS2540M-7B Notes: Marking TC TC Reel size (inches) 7 7 Tape width (mm) 8mm 8mm Quantity per reel 3,000 10,000 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com. Marking Information From date code 1527 (YYWW), this changes to: Top View Dot Denotes Collector Side TC TC TC TC Top View Bar Denotes Base and Emitter Side TC DSS2540M-7 TC TC TC TC DSS2540M Document number: DS31820 Rev. 4 - 2 TC TC TC DSS2540M-7B TC = Product Type Marking Code Top View Bar Denotes Base and Emitter Side 1 of 7 www.diodes.com May 2015 © Diodes Incorporated DSS2540M Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Peak Pulse Collector Current Peak Base Current Symbol VCBO VCEO VEBO IC ICM IBM Value 40 40 6 500 1 100 Unit V V V mA A mA Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Power Dissipation Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Lead Operating and Storage and Temperature Range Symbol (Note 5) (Note 6) (Note 5) (Note 6) (Note 7) PD RJA Value 400 1000 310 120 Unit mW C/W RJL 120 °C/W TJ, TSTG -55 to +150 °C ESD Ratings (Note 8) Characteristic Electrostatic Discharge - Human Body Model Electrostatic Discharge - Machine Model Notes: Symbol ESD HBM ESD MM Value 4,000 400 Unit V V JEDEC Class 3A B 5. For the device mounted on minimum recommended pad layout 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air conditions whilst operating in steady state condition. The entire exposed collector pad is attached to the heatsink. 6. Same as Note 5, except the exposed collector pad is mounted on 25mm x 25mm 2oz copper. 7. Thermal resistance from junction to solder-point (on the exposed collector pad). 8. Refer to JEDEC specification JESD22-A114 and JESD22-A115. DSS2540M Document number: DS31820 Rev. 4 - 2 2 of 7 www.diodes.com May 2015 © Diodes Incorporated DSS2540M Thermal Characteristics r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.9 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 RJA(t) = r(t) * R JA D = Single Pulse RJA = 310°C/W Duty Cycle, D = t1/ t2 0.001 0.000001 0.0001 0.01 1 t1, PULSE DURATION TIME (sec) Fig. 1 Transient Thermal Resistance 100 10,000 P (PK), PEAK TRANSI ENT POI WER (W) 1,000 Single Pulse RJA = 310°C/W 100 RJA(t) = r(t) * RJA TJ - TA = P * RJA(t) 10 1 0.1 1E-06 0.0001 0.01 1 100 10,000 t1, PULSE DURATION TIME (sec) Fig. 2 Single Pulse Maximum Power Dissipation DSS2540M Document number: DS31820 Rev. 4 - 2 3 of 7 www.diodes.com May 2015 © Diodes Incorporated DSS2540M Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 9) Emitter-Base Breakdown Voltage Symbol Min Typ Max Unit BVCBO BVCEO BVEBO 40 40 6 Collector Cutoff Current ICBO Emitter Cutoff Current ON CHARACTERISTICS (Note 9) IEBO 100 50 100 V V V nA µA nA DC Current Gain hFE 200 150 50 50 100 200 250 mV 500 1.2 1.1 mΩ V V VCE = 2V, IC = 10mA VCE = 2V, IC = 100mA VCE = 2V, IC = 500mA IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5mA IC = 200mA, IB = 10mA IC = 500mA, IB = 50mA IC = 500mA, IB = 50mA IC = 500mA, IB = 50mA VCE = 2V, IC = 100mA 300 6 pF MHz VCB = 10V, f = 1.0MHz VCE = 5V, IC = 100mA, f = 100MHz Collector-Emitter Saturation Voltage VCE(sat) Collector-Emitter Saturation Resistance Base-Emitter Saturation Voltage Base-Emitter Turn On Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Current Gain-Bandwidth Product RCE(sat) VBE(sat) VBE(on) Cobo fT 250 Note: Test Condition IC = 100µA, IE = 0 IC = 10mA, IB = 0 IE = 100µA, IC = 0 VCB = 30V, IE = 0 VCB = 30V, IE = 0, TA = +150°C VEB = 5V, IC = 0 9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%. DSS2540M Document number: DS31820 Rev. 4 - 2 4 of 7 www.diodes.com May 2015 © Diodes Incorporated DSS2540M Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.) 1,000 1.00 900 IB = 5mA 800 TA = 150°C hFE, DC CURRENT GAIN IC, COLLECTOR CURRENT (A) 0.80 IB = 4mA IB = 3mA 0.60 IB = 2mA 0.40 IB = 1mA 700 TA = 125°C 600 TA = 85°C 500 TA = 25°C 400 300 TA = -55°C 200 0.20 100 0 0 1 10 100 1,000 -IC, COLLECTOR CURRENT (mA) Fig. 5 Typical DC Current Gain vs. Collector Current 1 2 3 4 5 VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 4 Typical Collector Current vs. Collector-Emitter Voltage 1 VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) IC/IB = 20 0.1 TA = 150°C TA = 125°C T A = 85°C TA = 25°C TA = -55°C 0.01 0.1 0.9 TA = -55°C T A = 25°C 0.4 T A = 85°C 0.3 0.2 0.8 TA = -55°C 0.6 TA = 25°C TA = 85°C 0.4 TA = 125°C TA = 150°C 0.2 0.1 1 10 100 1,000 IC, COLLECTOR CURRENT (mA) Fig. 7 Typical Base-Emitter Saturation Voltage vs. Collector Current IC/IB = 20 0.6 0.5 IC/IB = 20 VCE = 2V 0.8 0.7 1.0 1,000 1.0 -RCE(SAT), COLLECTOR-EMITTER SATURATION RESISTANCE () VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V) 1 10 100 1,000 IC, COLLECTOR CURRENT (mA) Fig. 6 Typical Collector-Emitter Saturation Voltage vs. Collector Current VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) 0 T A = 125°C TA = 150°C 100 10 TA = -55°C 1 TA = 150°C TA = 85°C 0.1 0 0.1 TA = 25°C TA = 125°C 1 10 100 1,000 IC, COLLECTOR CURRENT (mA) Fig. 8 Typical Base-Emitter Turn-On Voltage vs. Collector Current DSS2540M Document number: DS31820 Rev. 4 - 2 5 of 7 www.diodes.com 0.1 0.1 1 10 100 1,000 -IC, COLLECTOR CURRENT (mA) Fig. 9 Typical Collector-Emitter Saturation Resistance vs. Collector Current May 2015 © Diodes Incorporated DSS2540M Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. A X1-DFN1006-3 Dim Min Max Typ A 0.47 0.53 0.50 A1 0.00 0.05 0.03 b 0.10 0.20 0.15 b2 0.45 0.55 0.50 D 0.95 1.075 1.00 E 0.55 0.675 0.60 e 0.35 L1 0.20 0.30 0.25 L2 0.20 0.30 0.25 L3 0.40 z 0.02 0.08 0.05 All Dimensions in mm A1 Seating Plane D b Pin #1 ID e E b2 z L3 L2 L1 Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. C Y Dimensions C G1 G2 X X1 Y Y1 Y1 G2 X G1 Value (in mm) 0.70 0.30 0.20 0.40 1.10 0.25 0.70 X1 DSS2540M Document number: DS31820 Rev. 4 - 2 6 of 7 www.diodes.com May 2015 © Diodes Incorporated DSS2540M IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 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