ds31836

MMBT3906LP
Features
Mechanical Data



BVCEO > -40V
IC = -200mA High Collector Current
PD = 1000mW Power Dissipation





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0.60mm2 Package Footprint, 13 times Smaller than SOT23
0.5mm Height Package Minimizing Off-Board Profile
Complementary NPN Type MMBT3904LP
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability



Case: X1-DFN1006-3
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish  NiPdAu,
Solderable per MIL-STD-202, Method 208 e4
Weight: 0.0008 grams (Approximate)
C
X1-DFN1006-3
B
C
B
E
E
Bottom View
Top View
Device Schematic
Device Symbol
Ordering Information (Note 4)
Product
MMBT3906LP-7
MMBT3906LP-7B
Notes:
Marking
3N
3N
Reel size (inches)
7
7
Tape width (mm)
8
8
Quantity per reel
3,000
10,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http//www.diodes.com/products/packages.html.
Marking Information
From date code 1527 (YYWW),
this changes to:
3N
3N
3N
3N
3N
3N
3N
Top View
Bar Denotes Base and Emitter Side
3N
Top View
Dot Denotes Collector Side
MMBT3906LP-7
3N = Product Type Marking Code
3N
MMBT3906LP
Document number: DS31836 Rev. 7 - 2
3N
Top View
Bar Denotes Base and Emitter Side
3N
MMBT3906LP-7B
3N
ADVANCE INFORMATION
40V PNP SMALL SIGNAL TRANSISTOR IN DFN1006
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May 2015
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MMBT3906LP
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
ADVANCE INFORMATION
Characteristic
Symbol
VCBO
VCEO
VEBO
IC
ICM
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Value
-40
-40
-6.0
-200
-200
Unit
V
V
V
mA
mA
Value
400
1000
310
120
Unit
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Power Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and Storage and Temperature Range
Symbol
(Note 5)
(Note 6)
(Note 5)
(Note 6)
(Note 7)
PD
RJA
mW
°C/W
RJL
120
°C/W
TJ, TSTG
-55 to +150
°C
ESD Ratings (Note 8)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Notes:
Symbol
ESD HBM
ESD MM
Value
4,000
200
Unit
V
V
JEDEC Class
3A
B
5. For the device mounted on minimum recommended pad layout 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air
conditions whilst operating in steady state condition. The entire exposed collector pad is attached to the heatsink.
6. Same as Note 5, except the exposed collector pad is mounted on 25mm x 25mm 2oz copper.
7. Thermal resistance from junction to solder-point (on the exposed collector pad).
8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
MMBT3906LP
Document number: DS31836 Rev. 7 - 2
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MMBT3906LP
Thermal Characteristics
r(t), TRANSIENT THERMAL RESISTANCE
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
RJA(t) = r(t) * R JA
D = Single Pulse
RJA = 310°C/W
Duty Cycle, D = t1/ t2
0.001
0.000001
0.0001
0.01
1
t1, PULSE DURATION TIME (sec)
Fig. 1 Transient Thermal Resistance
100
10,000
1,000
P (PK), PEAK TRANSI ENT POI WER (W)
ADVANCE INFORMATION
1
Single Pulse
RJA = 310°C/W
100
RJA(t) = r(t) * RJA
TJ - TA = P * RJA(t)
10
1
0.1
1E-06
0.0001
0.01
1
100
10,000
t1, PULSE DURATION TIME (sec)
Fig. 2 Single Pulse Maximum Power Dissipation
MMBT3906LP
Document number: DS31836 Rev. 7 - 2
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MMBT3906LP
ADVANCE INFORMATION
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 9)
Emitter-Base Breakdown Voltage
Symbol
Min
Max
Unit
BVCBO
BVCEO
BVEBO
ICEX
ICBO
IBL
-40
-40
-6.0






-50
-50
-50
V
V
V
nA
nA
nA
60
80
100
60
30


-0.65



300


-0.25
-0.40
-0.85
-0.95
Cobo
Cibo
hie
hre
hfe
hoe


2.0
0.1
100
3.0
4.5
10
12
10
400
60
pF
pF
kΩ
x 10-4

µS
Current Gain-Bandwidth Product
fT
300

MHz
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
td
tr
ts
tf




35
35
225
75
ns
ns
ns
ns
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 9)
DC Current Gain
hFE
Collector-Emitter Saturation Voltage
VCE(sat)
Base-Emitter Saturation Voltage
VBE(sat)
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance
Note:

V
V
Test Condition
IC = -100µA, IE = 0
IC = -10.0mA, IB = 0
IE = -100µA, IC = 0
VCE = -30V, VEB(OFF) = -3.0V
VCB = -30V, IE = 0
VCE = -30V, VEB(OFF) = -3.0V
IC = -100µA, VCE = -1.0V
IC = -1.0mA, VCE = -1.0V
IC = -10mA, VCE = -1.0V
IC = -50mA, VCE = -1.0V
IC = -100mA, VCE = -1.0V
IC = -10mA, IB = -1.0mA
IC = -50mA, IB = -5.0mA
IC = -10mA, IB = -1.0mA
IC = -50mA, IB = -5.0mA
VCB = -5.0V, f = 1.0MHz, IE = 0
VEB = -0.5V, f = 1.0MHz, IC = 0
VCE = 10V, IC = 1.0mA,
f = 1.0kHz
VCE = -20V, IC = -10mA,
f = 100MHz
VCC = -3.0V, IC = -10mA,
VBE(off) = 0.5V, IB1 = -1.0mA
VCC = -3.0V, IC = -10mA,
IB1 = IB2 = -1.0mA
9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
MMBT3906LP
Document number: DS31836 Rev. 7 - 2
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MMBT3906LP
Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
0.20
400
IB = -2mA
IB = -1.8mA
350
IB = -1.2mA
0.12
IB = -1mA
IB = -0.8mA
0.08
IB = -0.6mA
IB = -0.4mA
0.04
VCE = 1V
TA = 150°C
IB = -1.4mA
hFE, DC CURRENT GAIN
-IC, COLLECTOR CURRENT (A)
0.16
300
TA = 125°C
250
TA = 85°C
200
TA = 25°C
150
100
TA = -55°C
IB = -0.2mA
50
0
0
0
1
2
3
4
5
-VCE, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 4 Typical Collector Current
vs. Collector-Emitter Voltage
1
10
100
-IC, COLLECTOR CURRENT (mA)
Fig. 5 Typical DC Current Gain vs. Collector Current
1
1
IC/IB = 20
-V CE(SAT), COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
-VCE(SAT), COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
IC/IB = 10
TA = 150°C
0.1
TA = 125°C
TA = 85°C
TA = 25°C
TA = -55°C
1.2
Gain = 10
1.0
0.8
TA = -55°C
TA = 25°C
0.6
TA = 150°C
TA = 125°C
0.4
TA = 85°C
0.2
0.1
1
10
100
1,000
-IC, COLLECTOR CURRENT (mA)
Fig. 8 Typical Base-Emitter Saturation Voltage
vs. Collector Current
MMBT3906LP
Document number: DS31836 Rev. 7 - 2
TA = 125°C
TA = 85°C
TA = 25°C
TA = -55°C
1
10
100
1,000
-IC, COLLECTOR CURRENT (mA)
Fig. 7 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
10
100
1,000
-IC, COLLECTOR CURRENT (mA)
Fig. 6 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
-VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V)
1
TA = 150°C
0.1
0.01
0.1
0.01
-VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V)
ADVANCE INFORMATION
IB = -1.6mA
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1.2
Gain = 10
1.0
0.8
0.6
TA = -55°C
T A = 25°C
TA = 150°C
0.4
0.2
0.1
TA = 125°C
TA = 85°C
1
10
100
1,000
-IC, COLLECTOR CURRENT (mA)
Fig. 9 Typical Base-Emitter Saturation Voltage
vs. Collector Current
May 2015
© Diodes Incorporated
MMBT3906LP
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
ADVANCE INFORMATION
A
A1
X1-DFN1006-3
Dim Min Max Typ
A 0.47 0.53 0.50
A1 0.00 0.05 0.03
b
0.10 0.20 0.15
b2 0.45 0.55 0.50
D 0.95 1.075 1.00
E 0.55 0.675 0.60
e
0.35
L1 0.20 0.30 0.25
L2 0.20 0.30 0.25
L3
0.40
z
0.02 0.08 0.05
All Dimensions in mm
Seating Plane
D
b
Pin #1 ID
e
E b2
z
L3
L2
L1
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
C
Y
Dimensions
C
G1
G2
X
X1
Y
Y1
Y1
G2
X
G1
Value (in mm)
0.70
0.30
0.20
0.40
1.10
0.25
0.70
X1
MMBT3906LP
Document number: DS31836 Rev. 7 - 2
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MMBT3906LP
IMPORTANT NOTICE
ADVANCE INFORMATION
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2015, Diodes Incorporated
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MMBT3906LP
Document number: DS31836 Rev. 7 - 2
7 of 7
www.diodes.com
May 2015
© Diodes Incorporated