HFA180NH40PbF Vishay High Power Products HEXFRED® Ultrafast Soft Recovery Diode, 180 A FEATURES • Very low Qrr and trr • Lead (Pb)-free • Designed and qualified for industrial level Lug terminal anode RoHS COMPLIANT BENEFITS • Reduced RFI and EMI • Reduced snubbing Base cathode HALF-PAK (D-67) DESCRIPTION HEXFRED® diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An extensive characterization of the recovery behavior for different values of current, temperature and dI/dt simplifies the calculations of losses in the operating conditions. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses. PRODUCT SUMMARY IF(AV) 180 A VR 400 V IF(DC) at TC 200 A at 100 °C ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS 400 V Cathode to anode voltage VR Continuous forward current IF TC = 100 °C 200 Single pulse forward current IFSM Limited by junction temperature 1200 Non-repetitive avalanche energy EAS L = 100 µH, duty cycle limited by maximum TJ 1.4 TC = 25 °C 657 TC = 100 °C 263 Maximum power dissipation Operating junction and storage temperature range PD TC = 25 °C 395 TJ, TStg A mJ W - 55 to + 150 °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Cathode to anode breakdown voltage SYMBOL VBR TEST CONDITIONS IR = 100 µA IF = 180 A Maximum forward voltage VFM IF = 360 A See fig. 1 IF = 180 A, TJ = 125 °C Maximum reverse leakage current IRM TJ = 125 °C, VR = 400 V See fig. 2 Junction capacitance CT VR = 200 V See fig. 3 Series inductance LS From top of terminal hole to mounting plane Document Number: 94061 Revision: 01-Aug-08 For technical questions, contact: [email protected] MIN. TYP. MAX. UNITS 400 - - - 1.08 1.46 - 1.22 1.8 - 0.99 1.34 - - 4 - 370 500 pF - 6.0 - nH V mA www.vishay.com 1 HFA180NH40PbF Vishay High Power Products HEXFRED® Ultrafast Soft Recovery Diode, 180 A DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Reverse recovery time See fig. 5 trr Peak recovery current See fig. 6 IRRM Reverse recovery charge See fig. 7 Peak rate of recovery current See fig. 8 Qrr dI(rec)M/dt TEST CONDITIONS MIN. TYP. MAX. TJ = 25 °C - 90 140 TJ = 125 °C - 280 440 TJ = 25 °C IF = 135 A dIF/dt = 200 A/µs VR = 200 V TJ = 125 °C TJ = 25 °C - 9 16 - 18 32 - 300 950 TJ = 125 °C - 2650 6300 TJ = 25 °C - 300 - TJ = 125 °C - 290 - UNITS ns A nC A/µs THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS - 55 to 150 °C Maximum junction and storage temperature range TJ, TStg Maximum thermal resistance, junction to case RthJC DC operation See fig. 4 0.19 Typical thermal resistance, case to heatsink RthCS Mounting surface, smooth and greased 0.05 Approximate weight Mounting torque Terminal torque Case style www.vishay.com 2 °C/W 30 g 1.06 oz. minimum 3 (26.5) maximum 4 (35.4) N·m minimum 3.4 (30) (lbf · in) maximum 5 (44.2) HALF-PAK module For technical questions, contact: [email protected] Document Number: 94061 Revision: 01-Aug-08 HFA180NH40PbF 140 100 TJ = 150 °C TJ = 125 °C TJ = 25 °C 10 120 100 DC 80 60 40 20 1 0 0 0.5 1.0 1.5 2.0 2.5 0 3.0 100 200 300 500 400 VFM - Forward Voltage Drop (V) IF(AV) - DC Forward Current (A) Fig. 1 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current Fig. 4 - Maximum Allowable Case Temperature vs. DC Forward Current 400 10 TJ = 150 °C TJ = 125 °C TJ = 25 °C 350 IF = 200 A IF = 180 A IF = 70 A 1 300 TJ = 125 °C 0.1 trr (ns) IR - Reverse Current (µA) Vishay High Power Products 160 1000 Maximum Allowable Case Temperature (°C) IF - Instantaneous Forward Current (A) HEXFRED® Ultrafast Soft Recovery Diode, 180 A 0.01 250 200 150 100 TJ = 25 °C 0.001 50 0.0001 100 200 300 0 100 400 VR - Reverse Voltage (V) dIF/dt (A/µs) Fig. 2 - Typical Reverse Current vs. Reverse Voltage Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt 80 10 000 70 TJ = 125 °C TJ = 25 °C 60 IRRM (A) CT - Junction Capacitance (pF) 1000 TJ = 25 °C 1000 50 40 IF = 200 A IF = 180 A IF = 70 A 30 20 10 100 1 10 100 1000 0 100 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Document Number: 94061 Revision: 01-Aug-08 1000 dIF/dt (A/µs) Fig. 6 - - Typical Recovery Current vs. dIF/dt For technical questions, contact: [email protected] www.vishay.com 3 HFA180NH40PbF Vishay High Power Products HEXFRED® Ultrafast Soft Recovery Diode, 180 A 6000 Qrr (nC) 4000 IF = 200 A IF = 180 A IF = 70 A dI(rec)M/dt (A/µs) 5000 10 000 TJ = 125 °C TJ = 25 °C 3000 2000 200 A 180 A 70 A 1000 1000 TJ = 125 °C TJ = 25 °C 0 100 100 100 1000 1000 dIF/dt (A/µs) dIF/dt (A/µs) Fig. 7 - - Typical Stored Charge vs. dIF/dt Fig. 8 - Typical dI(rec)M/dt vs. dIF/dt ZthJC - Thermal Response 1 0.1 0.01 Single pulse (thermal response) 0.001 0.00001 0.0001 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 0.001 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) Fig. 9 - Maximum Thermal Impedance ZthJC Characteristics www.vishay.com 4 For technical questions, contact: [email protected] Document Number: 94061 Revision: 01-Aug-08 HFA180NH40PbF HEXFRED® Ultrafast Soft Recovery Diode, 180 A Vishay High Power Products VR = 200 V 0.01 Ω L = 70 µH D.U.T. dIF/dt adjust D IRFP250 G S Fig. 10 - Reverse Recovery Parameter Test Circuit (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (4) Qrr - area under curve defined by trr and IRRM (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current Qrr = (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 11 - Reverse Recovery Waveform and Definitions L = 100 µH High-speed switch D.U.T. Rg = 25 Ω Current monitor IL(PK) Freewheel diode + Decay time Vd = 50 V V(AVAL) VR(RATED) Fig. 12 - Avalanche Test Circuit and Waveforms Document Number: 94061 Revision: 01-Aug-08 For technical questions, contact: [email protected] www.vishay.com 5 HFA180NH40PbF Vishay High Power Products HEXFRED® Ultrafast Soft Recovery Diode, 180 A ORDERING INFORMATION TABLE Device code HFA 180 N H 40 PbF 1 2 3 4 5 6 1 - HEXFRED® family, electron irradiated 2 - Average current rating 3 - N = Not isolated 4 - H = HALF-PAK 5 - Voltage rating (400 V) 6 - Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com 6 http://www.vishay.com/doc?95020 For technical questions, contact: [email protected] Document Number: 94061 Revision: 01-Aug-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1