HFA08TA60C Vishay High Power Products HEXFRED® Ultrafast Soft Recovery Diode, 2 x 4 A FEATURES • • • • • • Base Common Cathode Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Designed and qualified for industrial level BENEFITS • • • • • 2 Reduced RFI and EMI Reduced power loss in diode and switching transistor Higher frequency operation Reduced snubbing Reduced parts count DESCRIPTION Anode Anode 2 1 Common 3 Cathode HFA08TA60C is a state of the art center tap ultrafast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 600 V and 4 A per leg continuous current, the HFA08TA60C is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultrafast recovery time, the HEXFRED® product line features extremely low values of peak recovery current (IRRM) and does not exhibit any tendency to “snap-off” during the tb portion of recovery. The HEXFRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED HFA08TA60C is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. TO-220AB PRODUCT SUMMARY VR 600 V VF at 4 A at 25 °C 1.8 V IF(AV) 2x4A trr (typical) 17 ns TJ (maximum) 150 °C Qrr 40 nC dI(rec)M/dt 280 A/µs ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Cathode to anode voltage Maximum continuous forward current per leg per device IF Single pulse forward current IFSM Maximum repetitive forward current IFRM Maximum power dissipation PD Operating junction and storage temperature range Document Number: 93040 Revision: 29-Jul-08 TEST CONDITIONS VR TC = 100 °C VALUES UNITS 600 V 4 8 25 A 16 TC = 25 °C 25 TC = 100 °C 10 TJ, TStg For technical questions, contact: [email protected] - 55 to + 150 W °C www.vishay.com 1 HFA08TA60C Vishay High Power Products HEXFRED® Ultrafast Soft Recovery Diode, 2 x 4 A ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS Cathode to anode breakdown voltage VBR IR = 100 µA Maximum forward voltage VFM IF = 8.0 A IF = 4.0 A See fig. 1 MIN. TYP. MAX. 600 - - - 1.5 1.8 - 1.8 2.2 IF = 4.0 A, TJ = 125 °C - 1.4 1.7 VR = VR rated - 0.17 3.0 - 44 300 UNITS V Maximum reverse leakage current IRM Junction capacitance CT VR = 200 V See fig. 3 - 4.0 8.0 pF Series inductance LS Measured lead to lead 5 mm from package body - 8.0 - nH UNITS TJ = 125 °C, VR = 0.8 x VR rated See fig. 2 µA DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER Reverse recovery time See fig. 5, 6 and 16 Peak recovery current See fig. 7 and 8 Reverse recovery charge See fig. 9 and 10 Peak rate of fall of recovery current during tb See fig. 11 and 12 SYMBOL TEST CONDITIONS MIN. TYP. MAX. - 17 - trr IF = 1.0 A, dIF/dt = 200 A/µs, VR = 30 V trr1 TJ = 25 °C - 28 42 trr2 TJ = 125 °C - 38 57 ns IRRM1 TJ = 25 °C - 2.9 5.2 IRRM2 TJ = 125 °C - 3.7 6.7 Qrr1 TJ = 25 °C - 40 60 Qrr2 TJ = 125 °C - 70 105 dI(rec)M/dt1 TJ = 25 °C - 280 - dI(rec)M/dt2 TJ = 125 °C - 235 - MIN. TYP. MAX. UNITS - - 300 °C - - 5.0 IF = 4.0 A dIF/dt = 200 A/µs VR = 200 V A nC A/µs THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS 0.063" from case (1.6 mm) for 10 s Lead temperature Tlead Thermal resistance, junction to case RthJC Thermal resistance, junction to ambient RthJA Typical socket mount - - 80 Thermal resistance, case to heatsink RthCS Mounting surface, flat, smooth and greased - 0.5 - - 2.0 - - 0.07 - oz. - 12 (10) kgf · cm (lbf · in) Weight 6.0 (5.0) Mounting torque Marking device www.vishay.com 2 Case style TO-220AB For technical questions, contact: [email protected] K/W g HFA08TA60C Document Number: 93040 Revision: 29-Jul-08 HFA08TA60C HEXFRED® Vishay High Power Products Ultrafast Soft Recovery Diode, 2 x 4 A 1000 10 TJ = 150 °C TJ = 125 °C TJ = 25 °C 1 TJ = 150 °C 100 IR - Reverse Current (µA) IF - Instantaneous Forward Current (A) 100 TJ = 125 °C 10 1 0.1 TJ = 25 °C 0.01 0.1 0.001 0 1 2 4 3 5 0 6 100 300 200 400 VFM - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current Fig. 2 - Typical Reverse Current vs. Reverse Voltage 500 CT - Junction Capacitance (pF) 100 TJ = 25 °C 10 1 1 10 100 1000 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage ZthJC - Thermal Response 10 1 0.1 Single pulse (thermal resistance) 0.01 0.00001 0.0001 PDM D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 0.001 t1 t2 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC 0.01 0.1 1 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Document Number: 93040 Revision: 29-Jul-08 For technical questions, contact: [email protected] www.vishay.com 3 HFA08TA60C Vishay High Power Products HEXFRED® Ultrafast Soft Recovery Diode, 2 x 4 A 50 200 IF = 8 A IF = 4 A 45 160 VR = 200 V TJ = 125 °C TJ = 25 °C 120 IF = 8 A IF = 4 A Qrr (nC) trr (ns) 40 35 80 30 25 40 VR = 200 V TJ = 125 °C TJ = 25 °C 20 100 0 100 1000 dIF/dt (A/µs) dIF/dt (A/µs) Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt Fig. 7 - Typical Stored Charge vs. dIF/dt 14 1000 VR = 200 V TJ = 125 °C TJ = 25 °C 12 IF = 8 A IF = 4 A dI(rec)M/dt (A/µs) 10 Irr (A) 1000 IF = 8 A IF = 4 A 8 6 4 VR = 200 V TJ = 125 °C TJ = 25 °C 2 0 100 www.vishay.com 4 1000 100 100 1000 dIF/dt (A/µs) dIF/dt (A/µs) Fig. 6 - Typical Recovery Current vs. dIF/dt Fig. 8 - Typical dI(rec)M/dt vs. dIF/dt For technical questions, contact: [email protected] Document Number: 93040 Revision: 29-Jul-08 HFA08TA60C HEXFRED® Vishay High Power Products Ultrafast Soft Recovery Diode, 2 x 4 A VR = 200 V 0.01 Ω L = 70 µH D.U.T. dIF/dt adjust D IRFP250 G S Fig. 9 - Reverse Recovery Parameter Test Circuit (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95222 Part marking information http://www.vishay.com/doc?95225 Document Number: 93040 Revision: 29-Jul-08 For technical questions, contact: [email protected] www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1