NIS5132 Green Description 3.6A 12V RESETTABLE ELECTRONIC FUSE Pin Assignments The NIS5132 is a self-protected resettable electronic fuse designed for consumer applications such as hard disk drives, to industrial applications to enhance system reliability against catastrophic and shutdown failures. ( Top View ) To support a wide range of demanding applications, the design has been optimized to operate over the supply range of 9.0V to 18V. For robustness and protections, the device integrates a low Rdson NMOS buffer power device along with an undervoltage lockout, overvoltage clamp, a current limit, a dv/dt control and a thermal shutdown circuits. The overvoltage circuit limits the output voltage without shutting the device down to allow the load to continue operating during over voltage. Thermal shutdown can be either latching type (NIS5132MN1) or auto-retry type (NIS5132MN2). GND 1 10 Source dv/dt 2 2 29 Source Enable/Fault 3 8 Source ILIMIT 4 7 Source NC 5 6 Source U-DFN3030-10 Features Applications 9.0 to 18V Operating Input Voltage Integrated NMOS Power Device with RDS(ON) of 30mΩ Typical Internal Current Limit - No External Current Sense Resistor in Load Path Under Voltage Lockout Over Voltage Clamp (NIS5132MN1 and NIS5132MN2) Thermal Shutdown -40C to +150C Operating Junction Temperature ESD Ratings : HBM ＞ 1500V; MM 200V Small Low Profile U-DFN3030-10 package UL Recognized, Report E322375-20140529 Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Notes: NIS5132MN1 NIS5132MN2 Hard Drives Mother Board Power Management Printer Load Power Management 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green” and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. Typical Application Circuits +12V 11 VDD SOURCE + 10µF 3 NIS5132 ENABLE ILIMIT 10 9 8 7 6 + RS 100µF Load 4 ENABLE GND dv/dt 1 2 Cdv/dt Figure 1 Application Circuit with Direct Current Sensing NIS5132 Document number: DS36457 Rev. 4 - 2 1 of 12 www.diodes.com May 2016 © Diodes Incorporated NIS5132 Typical Application Circuits (Cont..) +12V 11 VDD SOURCE + 10µF 3 NIS5132 10 9 8 7 6 + 100µF Load RS ENABLE 4 ILIMIT ENABLE GND dv/dt 1 2 Cdv/dt Figure 2 Application Circuit with Kelvin Current Sensing 1 2 3 4 5 COUT Load VDD SOURCE 11 NIS5135 5V CIN 12V 11 CIN VDD SOURCE NIS5132 10 9 8 7 6 RS RS COUT Load 7 ENABLE ILIMIT dv/dt GND 9 8 3 ENABLE 10 ENABLE GND 1 Cdv/dt ILIMIT 4 dv/dt 2 Cdv/dt Figure 3 Application Circuit with Common Thermal Shutdown Pin Descriptions Package: U-DFN3030-10 Pin Number Pin Name Function 1 GND 2 dv/dt 3 Enable/Fault 4 ILIMIT Ground pin Internal NMOS power device turn-on time adjustment pin: If this pin is is left unconnected, the internal capacitor ensures the turn-on ramp is over a period of 2ms typical. If an additional delay is required, connect a capacitor from this pin to the ground. Tri-state bi-directional interface pin: The output can be disabled by pulling this pin to ground through an open drain or an open collector. Additionally, this pin output goes to an intermediate state to indicate that the device is in thermal shutdown state. This pin can also be connected together with other NIS5132 devices to cause a system-wide simultaneous shutdown during thermal events. Current limit setting pin: A resistor between Source pins and this pin sets the overload and short-circuit current limit thresholds. 5 NC 6 to 10 Source Exposed PAD VDD NIS5132 Document number: DS36457 Rev. 4 - 2 No connect The internal NMOS power device’s Source pins: These pins are the Source of internal power device and also the output terminal of the electronic fuse Positive input voltage to the device 2 of 12 www.diodes.com May 2016 © Diodes Incorporated NIS5132 Functional Block Diagram VDD ENABLE/ FAULT Charge Pump Enable SOURCE Current Limit Thermal Shutdown UVLO Voltage Clamp ILIMIT dv/dt dv/dt Control GND Figure 4 Block Diagram 4.3V Startup Blanking 12µA Enable SD 2.64V + - EN/Fault 1.4V 0.58V SD + Thermal Reset Thermal Shutdown Thermal SD Figure 5 Enable/Fault Function Circuit NIS5132 Document number: DS36457 Rev. 4 - 2 3 of 12 www.diodes.com May 2016 © Diodes Incorporated NIS5132 Absolute Maximum Ratings (Note 4) (@TA = +25°C, unless otherwise specified.) Symbol Characteristic Value Input Voltage in Steady State Operating Conditions (Note 5) Input Voltage - Transient (100ms) 0.1 in2 (Note 6) Junction to Air Thermal Resistance 0.5 in2 (Note 6) VDD JA -0.6 to +18 -0.6 to +25 227 95 Unit V °C/W JL Junction to Lead Thermal Resistance JC Junction to Case Thermal Resistance 20 Package Power Dissipation at TA= +25°C 1.3 W PDMAX 27 Ts Thermal Derating Above +25°C Storage Temperature Range 10.4 -55 to +155 mW/°C °C TJ Operating Junction Temperature (Note 7) -40 to +150 °C TL Lead Temperature During Soldering (10s) +260 °C Notes: 4. Stresses greater than the 'Absolute Maximum Ratings' specified above may cause permanent damage to the device. These are stress ratings only; functional operation of the device at these or any other conditions exceeding those indicated in this specification is not implied. Device reliability may be affected by exposure to absolute maximum rating conditions for extended periods of time. 5. Negative voltage will not damage the device provided that the power dissipation is within the package package dissipation rating. 6. 1 oz copper on double sided FR-4 PCB. 7. Thermal limit is set above the maximum thermal rating. It is not recommended to operate the device at temperature above the maximum rating for extended period. Recommended Operating Conditions Symbol VDD TJ Test Condition Rating Supply Voltage Characteristic Operating 9.0 to 18.0 V Operating Juntion Temperature Range Operating -40 to +150 °C NIS5132 Document number: DS36457 Rev. 4 - 2 4 of 12 www.diodes.com Unit May 2016 © Diodes Incorporated NIS5132 Electrical Characteristics (VDD = 12V, CL = 100µF, dv/dt pin open, RLIMIT = 10Ω, and TA = +25°C, unless otherwise noted.) Symbol Device Characteristic IBIAS IBIAS_SD Max Unit — 0.8 1.5 mA Bias Current During Shutdown Device shutdown — 0.4 — mA — — — 7.6 V Enabling of the IC to ID = 100mA (with 1A resistive load) NMOS fully on — 220 — s 20 — 30 40 NMOS fully on, TJ = +140°C 45 — VDD = 18V, VGS = 0V, RL = ∞ — 0.19 0.3 TA = +25°C, 0.5 in.2 pad — 3.6 — TA = +80°C, min copper — 1.7 — — 250 — pF NMOS Drain to Source Kelvin ON Resistance (Note 8) Off State Output Voltage VOUT_OFF Typ Device operational Chip Enable Delay Time RDS(ON) Min Bias Current Minimum Operating Voltage Once VDD_MIN successfully Started Up NMOS Power Device TDLY Test Condition mΩ V ID Continuous Current (Note 9) A — Output Capacitance VDS = 12V, VGS = 0V, f = 1MHz Output Voltage Ramp Time Device enable to VDS = 11.7V 1.5 1.8 2.5 ms — — — VDD V Turn on, Voltage rising 7.7 8.5 9.3 V — — 0.80 — V During overvoltage protection, VDD = 18V 14 15 16.2 V 2.75 3.44 4.25 A 3.5 4.6 6.0 A +150 +175 +200 C — +45 — C dv/dt Ramp TSLEW Maximum Capacitor Voltage VC_MAX Under/Over Voltage Protection VUVLO Undervoltage Lockout Threshold VUVLO_HYST Undervoltage Lockout Hysteresis VCLAMP Overvoltage Clamp Limit (Note 10) Current Limit Kelvin Short Circuit Current Limit ILIMIT_SS RLIMIT = 15.4Ω (Note 11) Kelvin over Load Current Limit ILIMIT_OL RLIMIT = 15.4Ω (Note 11) Thermal Protection Thermal Shutdown Junction Temperature Temperature rising TSD Threshold (Note 9) Thermal Shutdown Hysteresis in Non — TSD_HYST Latching Devices Enable/Fault VEN_LOW Enable Logic Level Low Voltage Output disabled 0.35 0.58 0.81 V VEN_MID Enable Logic Level Mid Voltage Output disabled, Thermal fault 0.82 1.4 1.95 V VEN_HI Enable Logic Level High Output enabled 1.96 2.64 3.3 V VEN_MAX High State Maximum Voltage — 3.4 4.3 5.3 V IEN_SINK Logic Low Sink Current — -17 -25 µA — — 1.0 µA — — 3.0 Units IEN_LKG Fanout Notes: VENABLE = 0V Logic High Leakage Current for External VENABLE = 3.3V Switch Maximum Fanout – Number of Device that can be Connected Together to this — Pin for Simultaneous Shutdown 8. Pulse test with pulse width of 300µs, duty cycle 2%. 9. This parameter is not tested in production. It is guaranteed by design, process control and characterization. 10. Over voltage clamp feature is available on in NIS5132MN1 and NIS5132MN2 versions. 11. Refer to application note on explanation on short circuit and overload conditions. NIS5132 Document number: DS36457 Rev. 4 - 2 5 of 12 www.diodes.com May 2016 © Diodes Incorporated NIS5132 Performance Characteristics 9 0.88 8.8 0.86 8.6 0.84 HYST (V) Voltage (V) 8.4 8.2 8 0.8 0.78 7.8 0.76 7.6 7.4 -50 0.82 -25 0 25 50 75 100 125 0.74 -50 150 -25 0 25 Temperature (oC) 50 75 100 125 150 Temperature (oC) Figure 6 UVLO Turn-On Voltage vs. Temperature Figure 7 UVLO Hysteresis vs. Temperature 15.3 15.2 Voltage (V) 15.1 15 14.9 14.8 14.7 14.6 14.5 -50 -25 0 25 50 75 100 125 150 Temperature (oC) (oC) Figure 9 Output Voltage dv/dt Rate vs. Temperature Figure 8 Output Clamp Voltage vs. Temperature 1.80 1.60 1.40 Current (A) 1.20 1.00 0.80 0.60 0.40 0.20 0.00 400.00 500.00 600.00 700.00 800.00 900.00 1000.00 Forward Voltage (V) Figure 10 Input Transient Response NIS5132 Document number: DS36457 Rev. 4 - 2 Figure 11 Body Diodes Forward Characteristics 6 of 12 www.diodes.com May 2016 © Diodes Incorporated NIS5132 Performance Characteristics (Cont.) 35 10 30 OL Current (A) On Resistance (mW ) 32.5 27.5 SC 1 25 22.5 20 7 8 9 10 11 12 13 14 0.1 10 15 100 VCC (V) 1000 R sense ( W ) Figure 13 Current Limit vs. RSENSE for Direct Current Sensing Figure 12 Power Device ON Resistance (RDS(ON)) vs. VCC 10 4.5 4 3.5 Current (A) Current (A) 3 2.5 2 OL 1.5 1 OL SC SC 1 0.5 0.1 1 0 -50 -30 -10 10 30 50 70 90 10 100 R limit (W) Temperature (oC) Figure 14 Direct Current Sensing Level vs. Temperature (RSENSE = 27Ω) Figure 15 Current Limit vs. RSENSE for Kelvin Current Sensing 6 4 5.5 3.5 SC 5 3 Current (A) Current (A) OL 4.5 2.5 4 2 3.5 1.5 OL 3 SC 1 -40 -20 0 20 40 60 80 100 -40 o Temperature ( C) Document number: DS36457 Rev. 4 - 2 0 20 40 60 80 100 Temperature (oC) Figure 16 Kelvin Current Sensing Levels vs. Temperature (RSENSE = 15Ω) NIS5132 -20 Figure 17 Kelvin Current Sensing Levels vs. Temperature (RSENSE = 33 Kelvin Current Sensing Levels vs. Temperature (RSENSE = 33Ω 7 of 12 www.diodes.com May 2016 © Diodes Incorporated NIS5132 Application Note Theory of Operation The NIS5132 is a self-protected, resettable electronic fuse. It monitors the input and output voltage, the output current and the die temperature. When the NIS5132 is powered up it will ramp up the output voltage based on the dv/dt setting (see description below) and current will begin to flow. The device current limit can be set with an external resistor, the ramp rate (dv/dt) can be adjusted with an external capacitor. The Overvoltage Clamp, Undervoltage Lockout and Thermal Protection are internally set. Power Supply Considerations Placing a high-value electrolytic capacitor or X7R (X5R) ceramic capacitor between VDD to GND (10F) and SOURCE to GND (100F) as close to the device as possible is highly recommended. This precaution reduces power-supply transients that may cause ringing on the input and load transients that may cause output voltage falls below input voltage resulting device over-heat. Current Limit The NIS5132 incorporates a sensefet with a reference and amplifier to control the current in the device. The sensefet uses a small fraction of the load current to measure the actual current. This reduces the losses as a smaller sense resistor can be used. The current can be measured direct with the Rs resistor connected between the load and the Isense pin (see Figure 1). That method includes the resistance of the bond wires in the current limiting circuit. Or a Kelvin connection (see Figure 2) can be used, in that case one of the 5 source pins will be used and the voltage is measured on the die eliminating the bond wire resistance. That reduces the source pins to the load to four and with that increases the on resistance of the effuse to the load. Overvoltage Clamp The NIS5132MN1 and NIS5132MN2 monitor the input voltage and clamp it once it exceeds 15V. This will allow for transient on the input for short periods of time. If the input voltage stays above 15V for extended times the voltage drop across the FET with the load current will increase the die temperature and the thermal shutdown feature will protect the device and shut it down. Undervoltage Lock Out The input voltage of the NIS5132 is monitored by an UVLO circuit (undervoltage lockout) if the input voltage drops below this threshold the output transistor will be pulled into a high impedance state. dv/dt The NIS5132 has an integrated control circuit that forces a linear ramp on the output voltage raise regardless of the load impedance. Without connecting a capacitor on the dv/dt pin the ramp time is roughly 2ms. Adding an external capacitor can increase this ramp rate. The internal current source of 90µA will charge the external capacitor at a slow rate. It is recommended to utilize a ceramic capacitor. The ramp time can be determined with the following equation Cext in Farad tramp in seconds The ramp up circuit is discharged and VOUT starts from 0V when the units shuts down after a fault, enable shutdown or input power cycle. Enable/Fault The NIS5132 has a tri state Enable/Fault pin. It is used to turn on and off the device with high and low signals from a GPIO, but can also indicate a thermal fault. When the Enable/Fault pin is pulled low the output is turned off, when the Enable/Fault pin is pulled high the output is turned on. In the event of a thermal fault the Enable/Fault pin will be pulled low to an intermediate voltage by an internal circuit. This can be used to chain up to 4 NIS5132 together that during a thermal shut down the linked devices turn off as well. Due to this fault indication capability it should not be connected to any type of logic with an internal pull up device. The NIS5132MN1 connected to a 2nd device will latch-off until the Enable/Fault pin has been pulled to low and then allowed to go back up to a high signal, or if the power has been cycled. Once the part starts up again it will go through the startup ramp determined by the internal circuit or based on the externally connected capacitor on pin dv/dt. The MN2 devices will auto restart once the part that indicated a thermal shutdown has cooled down. It will also go through the startup ramp. NIS5132 Document number: DS36457 Rev. 4 - 2 8 of 12 www.diodes.com May 2016 © Diodes Incorporated NIS5132 Application Note (Cont.) Enable/Fault (cont.) Figure 18 Enable/Fault Signal Levels Thermal Protection The NIS5132 has an integrated temperature sensing circuit that protects the die in the event of over temperature. The trip point has been intentionally set high at +175˚C to allow for increase trip times during high power transient events. The NIS5132 will shut down current flow to the output when the die temperature reaches +175°C. The NIS5132MN1 will restart after the Enable pin has been toggled or the input power has been cycled. The NIS5132MN2 will auto restart after the die temperature has been reduced by -45°C. Even that the thermal trip point has been set high to allow for high current transients the circuit design should accomplish best thermal performance with good thermal layout of the PCB. It is not recommended to operate NIS5132 above +150°C over extended periods of time. Ordering Information NIS5132 XXX - XXX - 7 Feature Option MN1 : Thermal latching with VCLAMP MN2 : Thermal auto-retry with VCLAMP Package Packing FN : U-DFN3030-10 7 : Tape & Reel NIS5132MN1-FN-7 Package Code FN U-DFN3030-10 7” Tape and Reel Quantity Part Number Suffix 3,000/Tape & Reel -7 NIS5132MN2-FN-7 FN U-DFN3030-10 3,000/Tape & Reel Part Number NIS5132 Document number: DS36457 Rev. 4 - 2 Packaging 9 of 12 www.diodes.com -7 May 2016 © Diodes Incorporated NIS5132 Marking Information (1) Package type: U-DFN3030-10 ( Top View ) XX YWX XX : Identification Code Y : Year : 0~9 W : Week : A~Z : 1~26 week; a~z : 27~52 week; z represents 52 and 53 week X : A~Z : Internal code Part Number Package Identification Code NIS5132MN1 NIS5132MN2 U-DFN3030-10 U-DFN3030-10 M2 N2 Package Outline Dimensions (All Dimensions in mm) (1) Package Type: U-DFN3030-10 A3 A SEATING PLANE A1 D D2 Pin#1 ID E E2 L z U-DFN3030-10 Dim Min Max Typ A 0.57 0.63 0.60 A1 0 0.05 0.02 A3 0.15 b 0.20 0.30 0.25 D 2.90 3.10 3.00 D2 2.30 2.50 2.40 e 0.50 E 2.90 3.10 3.00 E2 1.50 1.70 1.60 L 0.25 0.55 0.40 z 0.375 All Dimensions in mm b e Suggested Pad Layout (1) Package Type: U-DFN3030-10 Y C X1 G Dimensions Value (in mm) Z 2.60 G 0.15 X 1.80 X1 0.60 Y 0.30 C 0.50 X G Z NIS5132 Document number: DS36457 Rev. 4 - 2 10 of 12 www.diodes.com May 2016 © Diodes Incorporated NIS5132 Taping Orientation (1) Note: Package Type: U-DFN3030-10 12. The taping orientation of the other package type can be found on our website at http://www.diodes.com/datasheets/ap02007.pdf. NIS5132 Document number: DS36457 Rev. 4 - 2 11 of 12 www.diodes.com May 2016 © Diodes Incorporated NIS5132 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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Copyright © 2016, Diodes Incorporated www.diodes.com NIS5132 Document number: DS36457 Rev. 4 - 2 12 of 12 www.diodes.com May 2016 © Diodes Incorporated