HF A 11N90

BVDSS = 900 V
RDS(on) typ ȍ
HFA11N90
ID = 11 A
900V N-Channel MOSFET
TO-247
FEATURES
‰ Originative New Design
1
‰ Superior Avalanche Rugged Technology
‰ Robust Gate Oxide Technology
2
3
1.Gate 2. Drain 3. Source
‰ Very Low Intrinsic Capacitances
‰ Excellent Switching Characteristics
‰ Unrivalled Gate Charge : 75 nC (Typ.)
‰ Extended Safe Operating Area
‰ Lower RDS(ON) ȍ7\S#9GS=10V
‰ 100% Avalanche Tested
Absolute Maximum Ratings
Symbol
VDSS
TC=25୅ unless otherwise specified
Parameter
Drain-Source Voltage
Value
Units
900
V
Drain Current
– Continuous (TC = 25୅)
11.0
A
Drain Current
– Continuous (TC = 100୅)
6.9
A
IDM
Drain Current
– Pulsed
44
A
VGS
Gate-Source Voltage
ρ30
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
960
mJ
IAR
Avalanche Current
(Note 1)
11
A
EAR
Repetitive Avalanche Energy
(Note 1)
12
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.0
V/ns
PD
Power Dissipation (TC = 25୅)
- Derate above 25୅
120
W
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
ID
(Note 1)
0.96
W/୅
-55 to +150
୅
300
୅
Thermal Resistance Characteristics
Symbol
Parameter
Typ.
Max.
RșJC
Junction-to-Case
--
1.04
RșJA
Junction-to-Ambient
--
40
Units
୅/W
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͑͢͝;ΒΣΔΙ͑ͣͥ͑͢͡
HFA11N90
March 2014
Symbol
Parameter
unless otherwise specified
Test Conditions
Min
Typ
Max
Units
On Characteristics
VGS
RDS(ON)
Gate Threshold Voltage
VDS = VGS, ID = 250 Ꮃ͑
2.5
--
4.5
V
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 5.5 A͑
--
0.93
1.15
‫͑ש‬
VGS = 0 V, ID = 250 Ꮃ͑
900
--
--
V
ID = 250 Ꮃ͑͝΃ΖΗΖΣΖΟΔΖΕ͑ΥΠͣͦఁ͑
--
1.02
--
·͠ఁ͑
VDS = 900 V, VGS = 0 V͑
--
--
1
Ꮃ͑
VDS = 720 V, TC = 125ఁ͑
--
--
10
Ꮃ͑
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
ԩBVDSS Breakdown Voltage Temperature
Coefficient
/ԩTJ
IDSS
Zero Gate Voltage Drain Current
IGSSF
Gate-Body Leakage Current,
Forward
VGS = 30 V, VDS = 0 V
--
--
100
Ꮂ͑
IGSSR
Gate-Body Leakage Current,
Reverse
VGS = -30 V, VDS = 0 V
--
--
-100
Ꮂ͑
--
3050
4000
Ꮔ͑
--
260
340
Ꮔ͑
--
28
36
Ꮔ͑
--
70
140
Ꭸ͑
--
155
310
Ꭸ͑
--
155
310
Ꭸ͑
--
100
200
Ꭸ͑
--
75
100
Οʹ͑
--
16
--
Οʹ͑
--
32
--
Οʹ͑
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz͑
Switching Characteristics
td(on)
Turn-On Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
VDS = 450 V, ID = 11.0 A,
RG = 25 ‫͑ש‬
͑
͙͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑ͿΠΥΖ͚͑ͥͦ͑͝
VDS = 720V, ID = 11.0 A,
VGS = 10 V
͙ͿΠΥΖ͚͑ͥͦ͑͝
Gate-Drain Charge
Source-Drain Diode Maximum Ratings and Characteristics
IS
Continuous Source-Drain Diode Forward Current
--
--
11.0
ISM
Pulsed Source-Drain Diode Forward Current
--
--
44
VSD
Source-Drain Diode Forward Voltage
IS = 11.0 A, VGS = 0 V
--
--
1.4
V
trr
Reverse Recovery Time
--
1200
--
Ꭸ͑
Qrr
Reverse Recovery Charge
IS = 11.0 A, VGS = 0 V
diFGW $ȝV(Note 4)
--
20.0
--
ȝ&
A
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=15mH, IAS=11.0A, VDD=50V, RG=25:, Starting TJ =25qC
3. ISD”$di/dt”$ȝV, VDD”%9DSS , Starting TJ =25 qC
4. Pulse Test : Pulse Width ”ȝV'XW\&\FOH”
5. Essentially Independent of Operating Temperature
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͑͢͝;ΒΣΔΙ͑ͣͥ͑͢͡
HFA11N90
Electrical Characteristics TC=25 qC
HFA11N90
Typical Characteristics
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
Top :
ID, Drain Current [A]
1
10
o
ID, Drain Current [A]
1
10
0
10
150 C
o
-55 C
25oC
0
10
䈜㻌㻺㼛㼠㼑㼟㻌㻦
ȝ V3XOVH7HVW
2. TC = 25 䉝
-1
10
䈜㻌㻺㼛㼠㼑㼟㻌㻦
1. VDS = 50V
ȝ V3XOVH7HVW
-1
-1
0
10
10
1
10
10
2
4
6
8
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
2.0
IDR, Reverse Drain Current [A]
RDS(ON)>ȍ @
Drain-Source On-Resistance
2.5
VGS = 10V
VGS = 20V
1.5
1.0
䈜㻌㻺㼛㼠㼑㻌㻦㻌㼀J = 25 䉝
0.5
1
10
0
10
䈜㻌㻺㼛㼠㼑㼟㻌㻦
1. VGS = 0V
ȝ V3XOVH7HVW
-1
0
5
10
15
20
25
30
10
0.2
0.4
0.6
ID, Drain Current [A]
3000
Coss
2000
䈜㻌㻺㼛㼠㼑㼟㻌㻦
1. VGS = 0 V
2. f = 1 MHz
1500
Crss
500
0
-1
10
1.4
VDS = 180V
VGS, Gate-Source Voltage [V]
Ciss
3500
1000
1.2
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
4500
2500
1.0
12
5000
4000
0.8
VSD, Source-Drain voltage [V]
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
Capacitance [pF]
25䉝
150 䉝
10
VDS = 450V
VDS = 720V
8
6
4
2
䈜㻌㻺㼛㼠㼑㻌㻦㻌㻵D = 11A
0
0
10
1
10
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
0
10
20
30
40
50
60
70
80
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͑͢͝;ΒΣΔΙ͑ͣͥ͑͢͡
(continued)
3.0
RDS(ON), (Normalized)
Drain-Source On-Resistance
1.2
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
HFA11N90
Typical Characteristics
1.1
1.0
䈜㻌㻺㼛㼠㼑㼟㻌㻦
1. VGS = 0 V
2. ID ȝ $
0.9
0.8
-100
-50
0
50
100
150
2.5
2.0
1.5
1.0
䈜㻌㻺㼛㼠㼑㼟㻌㻦
1. VGS = 10 V
2. ID = 5.5 A
0.5
0.0
-100
200
-50
0
50
100
150
200
o
o
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation
vs Temperature
Figure 8. On-Resistance Variation
vs Temperature
12
Operation in This Area
is Limited by R DS(on)
102
10
ID, Drain Current [A]
100 Ps
101
1 ms
10 ms
DC
100
-1
10
* Notes :
1. TC = 25 oC
8
6
4
2
2. TJ = 150 oC
3. Single Pulse
10-2 0
10
101
102
0
25
103
50
75
100
125
150
TC, Case Temperature [ 䉝㼉
VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs Case Temperature
100
ZTJC(t), Thermal Response
ID, Drain Current [A]
10 Ps
D=0.5
* Notes :
1. ZTJC(t) = 1.04 oC/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * ZTJC(t)
0.2
10-1
0.1
0.05
0.02
0.01
PDM
single pulse
-2
t1
10
10-5
10-4
10-3
10-2
10-1
t2
100
101
t1, Square Wave Pulse Duration [sec]
Figure 11. Transient Thermal Response Curve
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͑͢͝;ΒΣΔΙ͑ͣͥ͑͢͡
HFA11N90
Fig 12. Gate Charge Test Circuit & Waveform
.ȍ
12V
VGS
Same Type
as DUT
Qg
200nF
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Fig 13. Resistive Switching Test Circuit & Waveforms
RL
VDS
VDS
90%
VDD
RG
( 0.5 rated VDS )
Vin
DUT
10V
10%
tr
td(on)
td(off)
t on
tf
t off
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- LL IAS2 -------------------2
BVDSS -- VDD
L
VDS
VDD
ID
BVDSS
IAS
RG
10V
ID (t)
DUT
VDS (t)
VDD
tp
Time
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͑͢͝;ΒΣΔΙ͑ͣͥ͑͢͡
HFA11N90
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
IS
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• IS controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
IS
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
Vf
VDD
Body Diode
Forward Voltage Drop
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͑͢͝;ΒΣΔΙ͑ͣͥ͑͢͡
HFA11N90
Package Dimension
{vTY[^G
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͑͢͝;ΒΣΔΙ͑ͣͥ͑͢͡