TC4467/TC4468/TC4469 Logic-Input CMOS Quad Drivers Features General Description • High Peak Output Current: 1.2 A • Wide Operating Range: - 4.5 V to 18 V • Symmetrical Rise/Fall Times: 25 nsec • Short, Equal Delay Times: 75 nsec • Latch-proof. Will Withstand 500 mA Inductive Kickback • 3 Input Logic Choices: - AND / NAND / AND + Inv • ESD Protection on All Pins: 2 kV The TC4467/TC4468/TC4469 devices are a family of four-output CMOS buffers/MOSFET drivers with 1.2 A peak drive capability. Unlike other MOSFET drivers, these devices have two inputs for each output. The inputs are configured as logic gates: NAND (TC4467), AND (TC4468) and AND/INV (TC4469). Applications • • • • • • General Purpose CMOS Logic Buffer Driving All Four MOSFETs in an H-Bridge Direct Small Motor Driver Relay or Peripheral Drivers CCD Driver Pin-Switching Network Driver The TC4467/TC4468/TC4469 drivers can continuously source up to 250 mA into ground referenced loads. These devices are ideal for direct driving low current motors or driving MOSFETs in a H-bridge configuration for higher current motor drive (see Section 5.0 for details). Having the logic gates onboard the driver can help to reduce component count in many designs. The TC4467/TC4468/TC4469 devices are very robust and highly latch-up resistant. They can tolerate up to 5 V of noise spiking on the ground line and can handle up to 0.5 A of reverse current on the driver outputs. The TC4467/4468/4469 devices are available in commercial, industrial and military temperature ranges. Package Types 14-Pin PDIP/CERDIP 14 VDD 1A 1 1B 2 2A 3 2B 4 3A 5 13 1Y TC4467 TC4468 TC4469 12 2Y 11 3Y 10 4Y 3B 6 9 4B GND 7 8 4A 16-Pin SOIC (Wide) 16 15 14 13 VDD VDD 12 3Y 11 4Y 7 10 4B 8 9 4A 1A 1B 2A 2B 1 2 3 4 3A 5 3B 6 GND GND TC4467 TC4468 TC4469 2001-2012 Microchip Technology Inc. 1Y 2Y DS21425C-page 1 TC4467/TC4468/TC4469 Logic Diagrams TC4467 TC4468 TC4469 VDD VDD VDD 14 14 1A 1B 1 2 13 1Y 2A 2B 3 4 12 2Y 3A 3B 5 6 11 3Y 4A 4B 8 9 10 4Y 7 GND DS21425C-page 2 1A 1 1B 2 2A 3 2B 4 12 2Y 11 3Y 10 4Y 7 GND VDD 14 13 1Y 3A 5 3B 6 4A 8 4B 9 TC446X 1A 1 1B 2 2A 3 2B 4 13 1Y 12 2Y 3A 5 3B 6 4A 8 4B 9 Output 11 3Y 10 4Y 7 GND 2001-2012 Microchip Technology Inc. TC4467/TC4468/TC4469 1.0 ELECTRICAL CHARACTERISTICS †Notice: Stresses above those listed under "Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. Absolute Maximum Ratings† Supply Voltage ...............................................................+20 V Input Voltage ............................. (GND – 5 V) to (VDD + 0.3 V) Package Power Dissipation: (TA 70°C) PDIP...................................................................800 mW CERDIP .............................................................840 mW SOIC ..................................................................760 mW Package Thermal Resistance: CERDIP RJ-A ...................................................100°C/W CERDIP RJ-C .....................................................23°C/W PDIP RJ-A ..........................................................80°C/W PDIP RJ-C ..........................................................35°C/W SOIC RJ-A ..........................................................95°C/W SOIC RJ-C ..........................................................28°C/W Operating Temperature Range: C Version ................................................... 0°C to +70°C E Version.................................................-40°C to +85°C M Version ..............................................-55°C to +125°C Maximum Chip Temperature ....................................... +150°C Storage Temperature Range .........................-65°C to +150°C ELECTRICAL SPECIFICATIONS Electrical Characteristics: Unless otherwise noted, TA = +25°C, with 4.5 V VDD18 V. Parameters Sym Min Typ Max Units Conditions Input Logic 1, High Input Voltage VIH 2.4 — VDD V Note 3 Logic 0, Low Input Voltage VIL — — 0.8 V Note 3 Input Current IIN -1.0 — +1.0 µA 0 VVINVDD High Output Voltage VOH VDD – 0.025 — — V ILOAD = 100 µA (Note 1) Low Output Voltage VOL — — 0.15 V ILOAD = 10 mA (Note 1) Output Resistance RO — 10 15 IOUT = 10 mA, VDD = 18 V Peak Output Current IPK — 1.2 — A Continuous Output Current IDC — — 300 mA — — 500 I — 500 — mA Rise Time tR — 15 25 nsec Figure 4-1 Fall Time tF — 15 25 nsec Figure 4-1 Delay Time tD1 — 40 75 nsec Figure 4-1 Delay Time tD2 — 40 75 nsec Figure 4-1 Power Supply Current IS — 1.5 4 mA Power Supply Voltage VDD 4.5 — 18 V Output Latch-Up Protection Withstand Reverse Current Single Output Total Package 4.5 VVDD 16 V Switching Time (Note 1) Power Supply Note 1: 2: 3: Note 2 Totem pole outputs should not be paralleled because the propagation delay differences from one to the other could cause one driver to drive high a few nanoseconds before another. The resulting current spike, although short, may decrease the life of the device. Switching times are ensured by design. When driving all four outputs simultaneously in the same direction, VDD will be limited to 16 V. This reduces the chance that internal dv/dt will cause high-power dissipation in the device. The input threshold has approximately 50 mV of hysteresis centered at approximately 1.5 V. Input rise times should be kept below 5 µsec to avoid high internal peak currents during input transitions. Static input levels should also be maintained above the maximum, or below the minimum, input levels specified in the "Electrical Characteristics" to avoid increased power dissipation in the device. 2001-2012 Microchip Technology Inc. DS21425C-page 3 TC4467/TC4468/TC4469 ELECTRICAL SPECIFICATIONS (OPERATING TEMPERATURES) Electrical Characteristics: Unless otherwise noted, over operating temperature range with 4.5 V VDD18 V. Parameters Sym Min Typ Max Units Conditions Logic 1, High Input Voltage VIH 2.4 — — V Logic 0, Low Input Voltage VIL — — 0.8 V Note 3 Input Current IIN -10 — 10 µA 0 VVINVDD High Output Voltage VOH VDD – 0.025 — — V ILOAD = 100 µA (Note 1) Input Note 3 Output Low Output Voltage VOL — — 0.30 V ILOAD = 10 mA (Note 1) Output Resistance RO — 20 30 IOUT = 10 mA, VDD = 18 V Peak Output Current IPK — 1.2 — A Continuous Output Current IDC — — 300 mA Single Output — — 500 I — 500 — mA Rise Time tR — 15 50 nsec Fall Time tF — 15 50 nsec Figure 4-1 Delay Time tD1 — 40 100 nsec Figure 4-1 Delay Time tD2 — 40 100 nsec Figure 4-1 Latch-Up Protection Withstand Reverse Current Total Package 4.5 VVDD 16 V Switching Time (Note 1) Figure 4-1 Power Supply Power Supply Current IS — — 8 mA Power Supply Voltage VDD 4.5 — 18 V Note 1: 2: 3: Note 2 Totem pole outputs should not be paralleled because the propagation delay differences from one to the other could cause one driver to drive high a few nanoseconds before another. The resulting current spike, although short, may decrease the life of the device. Switching times are ensured by design. When driving all four outputs simultaneously in the same direction, VDD will be limited to 16 V. This reduces the chance that internal dv/dt will cause high-power dissipation in the device. The input threshold has approximately 50 mV of hysteresis centered at approximately 1.5 V. Input rise times should be kept below 5 µsec to avoid high internal peak currents during input transitions. Static input levels should also be maintained above the maximum, or below the minimum, input levels specified in the "Electrical Characteristics" to avoid increased power dissipation in the device. TRUTH TABLE Part No. TC4467 NAND Inputs A H H L TC4468 AND L H H L TC4469 AND/INV L H H L L Inputs B H L H L H L H L H L H L Outputs TC446X L H H H H L L L L H L L Legend: H = High L = Low DS21425C-page 4 2001-2012 Microchip Technology Inc. TC4467/TC4468/TC4469 2.0 TYPICAL PERFORMANCE CURVES Note: The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. Note: TA = +25°C, with 4.5 V VDD18 V. 140 140 2200 0 pF p 120 2200 pF 100 1600 pF p 80 1000 pF 100 tFALL (nsec) tRISE (nsec) 120 60 1000 pF 60 470 pF 40 470 pF 20 100 pF 20 100 pF p 3 5 7 FIGURE 2-1: Voltage. 9 11 13 VSUPPLY (V) 15 0 19 17 Rise Time vs. Supply 5 7 9 11 13 VSUPPLY (V) 15 19 17 Fall Time vs. Supply 140 120 5V 120 5V 100 tFALL (nsec) 100 80 10 V 15 V 60 80 40 20 20 0 100 FIGURE 2-2: Load. 0 100 10,000 1000 CLOAD (pF) Rise Time vs. Capacitive 10 V 15 V 60 40 10,000 1000 CLOAD (pF) FIGURE 2-5: Load. 25 Fall Time vs. Capacitive 80 VSUPPLY = 17.5 V CLOAD = 470 pF CLOAD = 4 470 pF DELAY TIME (nsec) 20 3 FIGURE 2-4: Voltage. 140 tRISE (nsec) 80 40 0 TIME (nsec) 1500 pF tFALL 15 tRISE 10 60 tD1 40 tD2 20 5 0 -50 0 -25 0 25 50 75 100 125 4 6 TEMPERATURE (°C) FIGURE 2-3: Temperature. Rise/Fall Times vs. 2001-2012 Microchip Technology Inc. 8 10 12 14 16 18 VSUPPLY (V) FIGURE 2-6: Supply Voltage. Propagation Delay Time vs. DS21425C-page 5 TC4467/TC4468/TC4469 2.0 TYPICAL PERFORMANCE CURVES (CONTINUED) Note: TA = +25°C, with 4.5 V VDD18 V. 140 70 VDD = 12 V VDD = 17.5 V = 470 pF VIN INPUT RISING DELAY TIME (nsec) DELAY TIME (nsec) 120 100 tD2 80 60 tD1 INPUT FALLING 40 tD1 50 tD2 40 30 20 0 60 1 2 3 4 FIGURE 2-7: Times. 5 6 VDRIVE (V) 7 8 20 -60 10 9 Input Amplitude vs. Delay -40 -20 0 FIGURE 2-10: vs. Temperatures. 20 40 60 °C) 80 100 120 Propagation Delay Times 3.5 2.5 VDD = 17.5 V 2.0 IQUIESCENT (mA) IQUIESCENT (mA) 3.0 OUTPUTS = 0 1.5 1.0 OUTPUTS = 1 0.5 6 8 10 12 VSUPPLY (V) 14 16 OUTPUTS = 1 1.0 -40 -20 0 FIGURE 2-11: vs. Temperature. 20 40 60 TJUNCTION (°C) 80 100 120 Quiescent Supply Current 35 35 30 30 TJ = +150°C 25 RDS(ON) (Ω) 25 RDS(ON) (Ω) 1.5 0 -60 18 FIGURE 2-8: Quiescent Supply Current vs. Supply Voltage. 20 TJ = +25°C 15 20 10 5 5 4 6 FIGURE 2-9: Resistance. DS21425C-page 6 8 10 12 V SUPPLY (V) 14 High-State Output 16 18 TJ = +150°C 15 10 0 OUTPUTS = 0 2.0 0.5 0 4 2.5 0 TJ = +25°C 4 6 FIGURE 2-12: Resistance. 8 10 12 V SUPPLY (V) 14 16 18 Low-State Output 2001-2012 Microchip Technology Inc. TC4467/TC4468/TC4469 2.0 TYPICAL PERFORMANCE CURVES (CONTINUED) Note: (Load on single output only). 60 60 VDD = 18 V 50 1000 pF 40 30 50 00 kHz 20 200 kHz 10 0 100 FIGURE 2-13: Capacitive Load. 30 20 100 pF p 0 10 10,000 Supply Current vs. 100 1000 FREQUENCY (kHz) FIGURE 2-16: Frequency. 60 2 MHz Supply Current vs. 2200 pF VDD = 12 V 50 50 ISUPPLY (mA) 40 1 MHz 30 20 500 kHz 10 FIGURE 2-14: Capacitive Load. 40 1000 pF p 30 20 100 pF 10 200 kHz 0 100 20 kHz 0 10,000 1000 CLOAD (pF) Supply Current vs. 10 100 FREQUENCY (kHz) FIGURE 2-17: Frequency. 60 1000 10,000 Supply Current vs. 60 VDD = 6 V VDD = 6 V 50 50 40 40 30 ISUPPLY (mA) ISUPPLY (mA) 10,000 60 VDD = 12 V ISUPPLY (mA) 40 10 20 kHz 1000 CLOAD (pF) 2200 pF 50 1 MH MHz ISUPPLY (mA) ISUPPLY (mA) VDD = 18 V 2 MH Hz 2 MHz 20 1 MHz 500 kHz 200 kHz 20 kHz 10 0 100 FIGURE 2-15: Capacitive Load. 1000 CLOAD (pF) Supply Current vs. 2001-2012 Microchip Technology Inc. 2200 pF 30 20 1000 pF 10 100 pF 10,000 0 10 FIGURE 2-18: Frequency. 100 1000 FREQUENCY (kHz) 10,000 Supply Current vs. DS21425C-page 7 TC4467/TC4468/TC4469 3.0 PIN DESCRIPTIONS The descriptions of the pins are listed in Table 3-1. TABLE 3-1: PIN FUNCTION TABLE 14-Pin PDIP, CERDIP 16-Pin SOIC (Wide) Symbol Symbol 1A 1A Input A for Driver 1, TTL/CMOS Compatible Input 1B 1B Input B for Driver 1, TTL/CMOS Compatible Input 2A 2A Input A for Driver 2, TTL/CMOS Compatible Input 2B 2B Input B for Driver 2, TTL/CMOS Compatible Input 3A 3A Input A for Driver 3, TTL/CMOS Compatible Input Input B for Driver 3, TTL/CMOS Compatible Input 3B 3B GND GND Description Ground — GND 4A 4A Input A for Driver 4, TTL/CMOS Compatible Input Ground 4B 4B Input B for Driver 4, TTL/CMOS Compatible Input 4Y 4Y Output for Driver 4, CMOS Push-Pull Output 3Y 3Y Output for Driver 3, CMOS Push-Pull Output 2Y 2Y Output for Driver 2, CMOS Push-Pull Output Output for Driver 1, CMOS Push-Pull Output 1Y 1Y VDD VDD Supply Input, 4.5 V to 18 V — VDD Supply Input, 4.5 V to 18 V DS21425C-page 8 2001-2012 Microchip Technology Inc. TC4467/TC4468/TC4469 4.0 DETAILED DESCRIPTION 4.4 4.1 Supply Bypassing The supply current versus frequency and supply current versus capacitive load characteristic curves will aid in determining power dissipation calculations. Microchip Technology's CMOS drivers have greatly reduced quiescent DC power consumption. Large currents are required to charge and discharge large capacitive loads quickly. For example, charging a 1000 pF load to 18 V in 25 nsec requires 0.72 A from the device's power supply. To ensure low supply impedance over a wide frequency range, a 1 µF film capacitor in parallel with one or two low-inductance, 0.1 µF ceramic disk capacitors with short lead lengths (<0.5 in.) normally provide adequate bypassing. 4.2 Grounding The TC4467 and TC4469 contain inverting drivers. Potential drops developed in common ground impedances from input to output will appear as negative feedback and degrade switching speed characteristics. Instead, individual ground returns for input and output circuits, or a ground plane, should be used. 4.3 Input Stage Power Dissipation Input signal duty cycle, power supply voltage and load type influence package power dissipation. Given power dissipation and package thermal resistance, the maximum ambient operating temperature is easily calculated. The 14-pin plastic package junction-toambient thermal resistance is 83.3°C/W. At +70°C, the package is rated at 800 mW maximum dissipation. Maximum allowable chip temperature is +150°C. Three components make up total package power dissipation: 1. 2. 3. Load-caused dissipation (PL). Quiescent power (PQ). Transition power (PT). A capacitive-load-caused dissipation (driving MOSFET gates), is a direct function of frequency, capacitive load and supply voltage. The power dissipation is: The input voltage level changes the no-load or quiescent supply current. The N-channel MOSFET input stage transistor drives a 2.5 mA current source load. With logic “0” outputs, maximum quiescent supply current is 4 mA. Logic “1” output level signals reduce quiescent current to 1.4 mA, maximum. Unused driver inputs must be connected to VDD or VSS. Minimum power dissipation occurs for logic “1” outputs. EQUATION The drivers are designed with 50 mV of hysteresis, which provides clean transitions and minimizes output stage current spiking when changing states. Input voltage thresholds are approximately 1.5 V, making any voltage greater than 1.5 V, up to VDD, a logic “1” input. Input current is less than 1 µA over this range. A resistive-load-caused dissipation for groundreferenced loads is a function of duty cycle, load current and load voltage. The power dissipation is: 2 P L = fCVS f = Switching Frequency C = Capacitive Load V S = Supply Voltage EQUATION P L = D V S – VL I L D = Duty Cycle V S = Supply Voltage V L = Load Voltage I L = Load Current 2001-2012 Microchip Technology Inc. DS21425C-page 9 TC4467/TC4468/TC4469 EQUATION A resistive-load-caused dissipation for supplyreferenced loads is a function of duty cycle, load current and output voltage. The power dissipation is –9 P T = fV s 10 10 C = 1000 pF Capacitive Load V S = 15 V D = 50% f = 200 kHz EQUATION PL = DV O IL D = Duty Cycle V O = Device Output Voltage I L = Load Current PD = = = = Quiescent power dissipation depends on input signal duty cycle. Logic HIGH outputs result in a lower power dissipation mode, with only 0.6 mA total current drain (all devices driven). Logic LOW outputs raise the current to 4 mA maximum. The quiescent power dissipation is: Package Power Dissipation P L + PQ + P T 45mW + 35mW + 30mW 110mW Package power dissipation is the sum of load, quiescent and transition power dissipations. An example shows the relative magnitude for each term: Maximum operating temperature is: EQUATION EQUATION PQ = V S D I H + 1 – D IL T J – JA P D = 141C I H = Quiescent Current with all outputs LOW (4 mA max.) I L = Quiescent Current with all outputs HIGH (0.6 mA max.) D = Duty Cycle V S = Supply Voltage T J = Maximum allowable junction temperature (+150C JA = Junction-to-ambient thernal resistance (83.3C/W) 14-pin plastic package Note: Ambient operating temperature should not exceed +85°C for "EJD" device or +125°C for "MJD" device. Transition power dissipation arises in the complimentary configuration (TC446X) because the output stage N-channel and P-channel MOS transistors are ON simultaneously for a very short period when the output changes. The transition power dissipation is approximately: VDD 1 µF Film Input: 100 kHz, square wave, tRISE = tFALL 10 nsec 0.1 µF Ceramic 14 1A 1B 2A 2B 3A 3B 4A 4B 1 2 13 3 4 12 5 6 11 8 9 10 +5 V VOUT 470 pF 90% Input (A, B) 0V 10% VDD tD1 90% tR Output 0V 10% tD2 90% tF 10% 7 FIGURE 4-1: DS21425C-page 10 Switching Time Test Circuit. 2001-2012 Microchip Technology Inc. TC4467/TC4468/TC4469 5.0 APPLICATIONS INFORMATION +12 V 14 TC4469 1 13 Red 2 Motor 3 A B Airpax #M82102-P2 7.5/Step 12 4 Gray 5 6 11 Yel 8 10 Blk 9 7 FIGURE 5-1: Stepper Motor Drive. +5 V to +15 V 14 18 V Direction Fwd Rev PWM Speed TC4469 1 2 13 3 4 12 5 6 11 8 9 10 M Motor 7 FIGURE 5-2: Quad Driver For H-bridge Motor Control. 2001-2012 Microchip Technology Inc. DS21425C-page 11 TC4467/TC4468/TC4469 6.0 PACKAGING INFORMATION 6.1 Package Marking Information 14-Lead PDIP (300 mil) Example: XXXXXXXXXXXXXX XXXXXXXXXXXXXX YYWWNNN 14-Lead CERDIP (300 mil) TC4467CPD YYWWNNN Example: XXXXXXXXXXXXXX XXXXXXXXXXXXXX YYWWNNN 16-Lead SOIC (300 mil) XXXXXXXXXXX XXXXXXXXXXX XXXXXXXXXXX YYWWNNN Legend: XX...X Y YY WW NNN e3 * Note: DS21425C-page 12 TC4468EJD YYWWNNN Example: TC4469COE YYWWNNN Customer-specific information Year code (last digit of calendar year) Year code (last 2 digits of calendar year) Week code (week of January 1 is week ‘01’) Alphanumeric traceability code Pb-free JEDEC designator for Matte Tin (Sn) This package is Pb-free. The Pb-free JEDEC designator ( e3 ) can be found on the outer packaging for this package. In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for customer-specific information. 2001-2012 Microchip Technology Inc. TC4467/TC4468/TC4469 14-Lead Plastic Dual In-line (P) – 300 mil (PDIP) Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging E1 D 2 n 1 E A2 A L c A1 B1 eB p B Units Dimension Limits n p MIN INCHES* NOM 14 .100 .155 .130 MAX MILLIMETERS NOM 14 2.54 3.56 3.94 2.92 3.30 0.38 7.62 7.94 6.10 6.35 18.80 19.05 3.18 3.30 0.20 0.29 1.14 1.46 0.36 0.46 7.87 9.40 5 10 5 10 MIN Number of Pins Pitch Top to Seating Plane A .140 .170 Molded Package Thickness A2 .115 .145 Base to Seating Plane A1 .015 Shoulder to Shoulder Width E .300 .313 .325 Molded Package Width E1 .240 .250 .260 Overall Length D .740 .750 .760 Tip to Seating Plane L .125 .130 .135 c Lead Thickness .008 .012 .015 Upper Lead Width B1 .045 .058 .070 Lower Lead Width B .014 .018 .022 eB Overall Row Spacing § .310 .370 .430 Mold Draft Angle Top 5 10 15 Mold Draft Angle Bottom 5 10 15 * Controlling Parameter § Significant Characteristic Notes: Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .010” (0.254mm) per side. JEDEC Equivalent: MS-001 Drawing No. C04-005 2001-2012 Microchip Technology Inc. MAX 4.32 3.68 8.26 6.60 19.30 3.43 0.38 1.78 0.56 10.92 15 15 DS21425C-page 13 TC4467/TC4468/TC4469 14-Lead Ceramic Dual In-line – 300 mil (CERDIP) Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging 14-Pin CERDIP (Narrow) PIN 1 .300 (7.62) .230 (5.84) .098 (2.49) MAX. .030 (0.76) MIN. .780 (19.81) .740 (18.80) .320 (8.13) .290 (7.37) .040 (1.02) .020 (0.51) .200 (5.08) .160 (4.06) .015 (0.38) .150 (3.81) .008 (0.20) MIN. .200 (5.08) .125 (3.18) .110 (2.79) .090 (2.29) DS21425C-page 14 .065 (1.65) .045 (1.14) .020 (0.51) .016 (0.41) 3° MIN. .400 (10.16) .320 (8.13) Dimensions: inches (mm) 2001-2012 Microchip Technology Inc. TC4467/TC4468/TC4469 16-Lead Plastic Small Outline (SO) – Wide, 300 mil (SOIC) Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging E p E1 D 2 1 n B h 45 c A2 A L Units Dimension Limits n p Number of Pins Pitch Overall Height Molded Package Thickness Standoff § Overall Width Molded Package Width Overall Length Chamfer Distance Foot Length Foot Angle Lead Thickness Lead Width Mold Draft Angle Top Mold Draft Angle Bottom * Controlling Parameter § Significant Characteristic A A2 A1 E E1 D h L c B MIN .093 .088 .004 .394 .291 .398 .010 .016 0 .009 .014 0 0 A1 INCHES* NOM 16 .050 .099 .091 .008 .407 .295 .406 .020 .033 4 .011 .017 12 12 MAX .104 .094 .012 .420 .299 .413 .029 .050 8 .013 .020 15 15 MILLIMETERS NOM 16 1.27 2.36 2.50 2.24 2.31 0.10 0.20 10.01 10.34 7.39 7.49 10.10 10.30 0.25 0.50 0.41 0.84 0 4 0.23 0.28 0.36 0.42 0 12 0 12 MIN MAX 2.64 2.39 0.30 10.67 7.59 10.49 0.74 1.27 8 0.33 0.51 15 15 Notes: Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .010” (0.254mm) per side. JEDEC Equivalent: MS-013 Drawing No. C04-102 2001-2012 Microchip Technology Inc. DS21425C-page 15 TC4467/TC4468/TC4469 7.0 REVISION HISTORY Revision C (December 2012) Added a note to each package outline drawing. DS21425C-page 16 2001-2012 Microchip Technology Inc. TC4467/4468/4469 THE MICROCHIP WEB SITE CUSTOMER SUPPORT Microchip provides online support via our WWW site at www.microchip.com. This web site is used as a means to make files and information easily available to customers. Accessible by using your favorite Internet browser, the web site contains the following information: Users of Microchip products can receive assistance through several channels: • Product Support – Data sheets and errata, application notes and sample programs, design resources, user’s guides and hardware support documents, latest software releases and archived software • General Technical Support – Frequently Asked Questions (FAQ), technical support requests, online discussion groups, Microchip consultant program member listing • Business of Microchip – Product selector and ordering guides, latest Microchip press releases, listing of seminars and events, listings of Microchip sales offices, distributors and factory representatives • • • • Distributor or Representative Local Sales Office Field Application Engineer (FAE) Technical Support Customers should contact their distributor, representative or field application engineer (FAE) for support. Local sales offices are also available to help customers. A listing of sales offices and locations is included in the back of this document. Technical support is available through the web site at: http://microchip.com/support CUSTOMER CHANGE NOTIFICATION SERVICE Microchip’s customer notification service helps keep customers current on Microchip products. Subscribers will receive e-mail notification whenever there are changes, updates, revisions or errata related to a specified product family or development tool of interest. To register, access the Microchip web site at www.microchip.com. Under “Support”, click on “Customer Change Notification” and follow the registration instructions. 2001-2012 Microchip Technology Inc. DS21425C-page 17 TC4467/4468/4469 READER RESPONSE It is our intention to provide you with the best documentation possible to ensure successful use of your Microchip product. If you wish to provide your comments on organization, clarity, subject matter, and ways in which our documentation can better serve you, please FAX your comments to the Technical Publications Manager at (480) 792-4150. Please list the following information, and use this outline to provide us with your comments about this document. TO: Technical Publications Manager RE: Reader Response Total Pages Sent ________ From: Name Company Address City / State / ZIP / Country Telephone: (_______) _________ - _________ FAX: (______) _________ - _________ Application (optional): Would you like a reply? Y N Device: TC4467/4468/4469 Literature Number: DS21425C Questions: 1. What are the best features of this document? 2. How does this document meet your hardware and software development needs? 3. Do you find the organization of this document easy to follow? If not, why? 4. What additions to the document do you think would enhance the structure and subject? 5. What deletions from the document could be made without affecting the overall usefulness? 6. Is there any incorrect or misleading information (what and where)? 7. How would you improve this document? DS21425C-page 18 2001-2012 Microchip Technology Inc. TC4467/TC4468/TC4469 PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office. PART NO. Device X XX Temperature Range Package Examples: a) b) c) Device: TC4467: TC4468: TC4469: 1.2A Quad MOSFET Driver, NAND 1.2A Quad MOSFET Driver, AND 1.2A Quad MOSFET Driver, AND/INV C E M 0C to +70C -40C to +85C (CERDIP only) -55C to +125C (CERDIP only) a) b) Temperature Range: = = = a) b) Package: PD JD OE OE713 = = = = Plastic DIP, (300 mil body), 14-lead Ceramic DIP, (300 mil body), 14-lead SOIC (Wide), 16-lead SOIC (Wide), 16-lead (Tape and Reel) TC4467COE: Commerical Temperature, SOIC package. TC4467CPD: Commercial Temperature, PDIP package. TC4467MJD: Military Temperature, Ceramic DIP package. TC4468COE713: Tape and Reel, Commerical Temp., SOIC package. TC4468CPD: Commercial Temperature, PDIP package. TC4469COE: Commercial Temperature, SOIC package. TC4469CPD: Commercial Temperature, PDIP package. Sales and Support Data Sheets Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and recommended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following: 1. 2. Your local Microchip sales office The Microchip Worldwide Site (www.microchip.com) Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using. New Customer Notification System Register on our web site (www.microchip.com/cn) to receive the most current information on our products. 2001-2012 Microchip Technology Inc. DS21425C-page19 TC4467/TC4468/TC4469 NOTES: DS21425C-page 20 2001-2012 Microchip Technology Inc. Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet. • Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions. • There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property. • Microchip is willing to work with the customer who is concerned about the integrity of their code. • Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as “unbreakable.” Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act. Information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. MICROCHIP MAKES NO REPRESENTATIONS OR WARRANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED, WRITTEN OR ORAL, STATUTORY OR OTHERWISE, RELATED TO THE INFORMATION, INCLUDING BUT NOT LIMITED TO ITS CONDITION, QUALITY, PERFORMANCE, MERCHANTABILITY OR FITNESS FOR PURPOSE. Microchip disclaims all liability arising from this information and its use. Use of Microchip devices in life support and/or safety applications is entirely at the buyer’s risk, and the buyer agrees to defend, indemnify and hold harmless Microchip from any and all damages, claims, suits, or expenses resulting from such use. No licenses are conveyed, implicitly or otherwise, under any Microchip intellectual property rights. Trademarks The Microchip name and logo, the Microchip logo, dsPIC, FlashFlex, KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro, PICSTART, PIC32 logo, rfPIC, SST, SST Logo, SuperFlash and UNI/O are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. FilterLab, Hampshire, HI-TECH C, Linear Active Thermistor, MTP, SEEVAL and The Embedded Control Solutions Company are registered trademarks of Microchip Technology Incorporated in the U.S.A. Silicon Storage Technology is a registered trademark of Microchip Technology Inc. in other countries. Analog-for-the-Digital Age, Application Maestro, BodyCom, chipKIT, chipKIT logo, CodeGuard, dsPICDEM, dsPICDEM.net, dsPICworks, dsSPEAK, ECAN, ECONOMONITOR, FanSense, HI-TIDE, In-Circuit Serial Programming, ICSP, Mindi, MiWi, MPASM, MPF, MPLAB Certified logo, MPLIB, MPLINK, mTouch, Omniscient Code Generation, PICC, PICC-18, PICDEM, PICDEM.net, PICkit, PICtail, REAL ICE, rfLAB, Select Mode, SQI, Serial Quad I/O, Total Endurance, TSHARC, UniWinDriver, WiperLock, ZENA and Z-Scale are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. GestIC and ULPP are registered trademarks of Microchip Technology Germany II GmbH & Co. & KG, a subsidiary of Microchip Technology Inc., in other countries. All other trademarks mentioned herein are property of their respective companies. © 2001-2012, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved. Printed on recycled paper. ISBN: 9781620767993 QUALITY MANAGEMENT SYSTEM CERTIFIED BY DNV == ISO/TS 16949 == 2001-2012 Microchip Technology Inc. Microchip received ISO/TS-16949:2009 certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona; Gresham, Oregon and design centers in California and India. The Company’s quality system processes and procedures are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping devices, Serial EEPROMs, microperipherals, nonvolatile memory and analog products. In addition, Microchip’s quality system for the design and manufacture of development systems is ISO 9001:2000 certified. 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