MICROCHIP TC4467_13

TC4467/TC4468/TC4469
Logic-Input CMOS Quad Drivers
Features
General Description
• High Peak Output Current: 1.2 A
• Wide Operating Range:
- 4.5 V to 18 V
• Symmetrical Rise/Fall Times: 25 nsec
• Short, Equal Delay Times: 75 nsec
• Latch-proof. Will Withstand 500 mA Inductive
Kickback
• 3 Input Logic Choices:
- AND / NAND / AND + Inv
• ESD Protection on All Pins: 2 kV
The TC4467/TC4468/TC4469 devices are a family of
four-output CMOS buffers/MOSFET drivers with 1.2 A
peak drive capability. Unlike other MOSFET drivers,
these devices have two inputs for each output. The
inputs are configured as logic gates: NAND (TC4467),
AND (TC4468) and AND/INV (TC4469).
Applications
•
•
•
•
•
•
General Purpose CMOS Logic Buffer
Driving All Four MOSFETs in an H-Bridge
Direct Small Motor Driver
Relay or Peripheral Drivers
CCD Driver
Pin-Switching Network Driver
The TC4467/TC4468/TC4469 drivers can continuously
source up to 250 mA into ground referenced loads.
These devices are ideal for direct driving low current
motors or driving MOSFETs in a H-bridge configuration
for higher current motor drive (see Section 5.0 for
details). Having the logic gates onboard the driver can
help to reduce component count in many designs.
The TC4467/TC4468/TC4469 devices are very robust
and highly latch-up resistant. They can tolerate up to
5 V of noise spiking on the ground line and can handle
up to 0.5 A of reverse current on the driver outputs.
The TC4467/4468/4469 devices are available in
commercial, industrial and military temperature ranges.
Package Types
14-Pin PDIP/CERDIP
14 VDD
1A 1
1B 2
2A 3
2B 4
3A 5
13 1Y
TC4467
TC4468
TC4469
12 2Y
11 3Y
10 4Y
3B 6
9 4B
GND 7
8 4A
16-Pin SOIC (Wide)
16
15
14
13
VDD
VDD
12
3Y
11
4Y
7
10
4B
8
9
4A
1A
1B
2A
2B
1
2
3
4
3A
5
3B
6
GND
GND
TC4467
TC4468
TC4469
 2001-2012 Microchip Technology Inc.
1Y
2Y
DS21425C-page 1
TC4467/TC4468/TC4469
Logic Diagrams
TC4467
TC4468
TC4469
VDD
VDD
VDD
14
14
1A
1B
1
2
13 1Y
2A
2B
3
4
12 2Y
3A
3B
5
6
11 3Y
4A
4B
8
9
10 4Y
7
GND
DS21425C-page 2
1A 1
1B 2
2A 3
2B 4
12 2Y
11 3Y
10 4Y
7
GND
VDD
14
13 1Y
3A 5
3B 6
4A 8
4B 9
TC446X
1A 1
1B 2
2A 3
2B 4
13 1Y
12 2Y
3A 5
3B 6
4A 8
4B 9
Output
11 3Y
10 4Y
7
GND
 2001-2012 Microchip Technology Inc.
TC4467/TC4468/TC4469
1.0
ELECTRICAL
CHARACTERISTICS
†Notice: Stresses above those listed under "Maximum
Ratings" may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operation listings of this specification is not implied. Exposure
to maximum rating conditions for extended periods may affect
device reliability.
Absolute Maximum Ratings†
Supply Voltage ...............................................................+20 V
Input Voltage ............................. (GND – 5 V) to (VDD + 0.3 V)
Package Power Dissipation: (TA 70°C)
PDIP...................................................................800 mW
CERDIP .............................................................840 mW
SOIC ..................................................................760 mW
Package Thermal Resistance:
CERDIP RJ-A ...................................................100°C/W
CERDIP RJ-C .....................................................23°C/W
PDIP RJ-A ..........................................................80°C/W
PDIP RJ-C ..........................................................35°C/W
SOIC RJ-A ..........................................................95°C/W
SOIC RJ-C ..........................................................28°C/W
Operating Temperature Range:
C Version ................................................... 0°C to +70°C
E Version.................................................-40°C to +85°C
M Version ..............................................-55°C to +125°C
Maximum Chip Temperature ....................................... +150°C
Storage Temperature Range .........................-65°C to +150°C
ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Unless otherwise noted, TA = +25°C, with 4.5 V VDD18 V.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Input
Logic 1, High Input Voltage
VIH
2.4
—
VDD
V
Note 3
Logic 0, Low Input Voltage
VIL
—
—
0.8
V
Note 3
Input Current
IIN
-1.0
—
+1.0
µA
0 VVINVDD
High Output Voltage
VOH
VDD – 0.025
—
—
V
ILOAD = 100 µA (Note 1)
Low Output Voltage
VOL
—
—
0.15
V
ILOAD = 10 mA (Note 1)
Output Resistance
RO
—
10
15

IOUT = 10 mA, VDD = 18 V
Peak Output Current
IPK
—
1.2
—
A
Continuous Output Current
IDC
—
—
300
mA
—
—
500
I
—
500
—
mA
Rise Time
tR
—
15
25
nsec
Figure 4-1
Fall Time
tF
—
15
25
nsec
Figure 4-1
Delay Time
tD1
—
40
75
nsec
Figure 4-1
Delay Time
tD2
—
40
75
nsec
Figure 4-1
Power Supply Current
IS
—
1.5
4
mA
Power Supply Voltage
VDD
4.5
—
18
V
Output
Latch-Up Protection Withstand
Reverse Current
Single Output
Total Package
4.5 VVDD 16 V
Switching Time (Note 1)
Power Supply
Note
1:
2:
3:
Note 2
Totem pole outputs should not be paralleled because the propagation delay differences from one to the other could cause one driver to
drive high a few nanoseconds before another. The resulting current spike, although short, may decrease the life of the device. Switching
times are ensured by design.
When driving all four outputs simultaneously in the same direction, VDD will be limited to 16 V. This reduces the chance that internal dv/dt
will cause high-power dissipation in the device.
The input threshold has approximately 50 mV of hysteresis centered at approximately 1.5 V. Input rise times should be kept below 5 µsec
to avoid high internal peak currents during input transitions. Static input levels should also be maintained above the maximum, or below
the minimum, input levels specified in the "Electrical Characteristics" to avoid increased power dissipation in the device.
 2001-2012 Microchip Technology Inc.
DS21425C-page 3
TC4467/TC4468/TC4469
ELECTRICAL SPECIFICATIONS (OPERATING TEMPERATURES)
Electrical Characteristics: Unless otherwise noted, over operating temperature range with 4.5 V VDD18 V.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Logic 1, High Input Voltage
VIH
2.4
—
—
V
Logic 0, Low Input Voltage
VIL
—
—
0.8
V
Note 3
Input Current
IIN
-10
—
10
µA
0 VVINVDD
High Output Voltage
VOH
VDD – 0.025
—
—
V
ILOAD = 100 µA (Note 1)
Input
Note 3
Output
Low Output Voltage
VOL
—
—
0.30
V
ILOAD = 10 mA (Note 1)
Output Resistance
RO
—
20
30

IOUT = 10 mA, VDD = 18 V
Peak Output Current
IPK
—
1.2
—
A
Continuous Output Current
IDC
—
—
300
mA
Single Output
—
—
500
I
—
500
—
mA
Rise Time
tR
—
15
50
nsec
Fall Time
tF
—
15
50
nsec
Figure 4-1
Delay Time
tD1
—
40
100
nsec
Figure 4-1
Delay Time
tD2
—
40
100
nsec
Figure 4-1
Latch-Up Protection Withstand
Reverse Current
Total Package
4.5 VVDD 16 V
Switching Time (Note 1)
Figure 4-1
Power Supply
Power Supply Current
IS
—
—
8
mA
Power Supply Voltage
VDD
4.5
—
18
V
Note
1:
2:
3:
Note 2
Totem pole outputs should not be paralleled because the propagation delay differences from one to the other could cause one driver to
drive high a few nanoseconds before another. The resulting current spike, although short, may decrease the life of the device. Switching
times are ensured by design.
When driving all four outputs simultaneously in the same direction, VDD will be limited to 16 V. This reduces the chance that internal dv/dt
will cause high-power dissipation in the device.
The input threshold has approximately 50 mV of hysteresis centered at approximately 1.5 V. Input rise times should be kept below 5 µsec
to avoid high internal peak currents during input transitions. Static input levels should also be maintained above the maximum, or below
the minimum, input levels specified in the "Electrical Characteristics" to avoid increased power dissipation in the device.
TRUTH TABLE
Part No.
TC4467 NAND
Inputs A
H
H
L
TC4468 AND
L
H
H
L
TC4469 AND/INV
L
H
H
L
L
Inputs B
H
L
H
L
H
L
H
L
H
L
H
L
Outputs TC446X
L
H
H
H
H
L
L
L
L
H
L
L
Legend: H = High
L = Low
DS21425C-page 4
 2001-2012 Microchip Technology Inc.
TC4467/TC4468/TC4469
2.0
TYPICAL PERFORMANCE CURVES
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein are
not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note:
TA = +25°C, with 4.5 V VDD18 V.
140
140
2200
0 pF
p
120 2200 pF
100
1600 pF
p
80
1000 pF
100
tFALL (nsec)
tRISE (nsec)
120
60
1000 pF
60
470 pF
40
470 pF
20
100 pF
20
100 pF
p
3
5
7
FIGURE 2-1:
Voltage.
9
11
13
VSUPPLY (V)
15
0
19
17
Rise Time vs. Supply
5
7
9
11
13
VSUPPLY (V)
15
19
17
Fall Time vs. Supply
140
120
5V
120
5V
100
tFALL (nsec)
100
80
10 V
15 V
60
80
40
20
20
0
100
FIGURE 2-2:
Load.
0
100
10,000
1000
CLOAD (pF)
Rise Time vs. Capacitive
10 V
15 V
60
40
10,000
1000
CLOAD (pF)
FIGURE 2-5:
Load.
25
Fall Time vs. Capacitive
80
VSUPPLY = 17.5 V
CLOAD = 470 pF
CLOAD = 4
470 pF
DELAY TIME (nsec)
20
3
FIGURE 2-4:
Voltage.
140
tRISE (nsec)
80
40
0
TIME (nsec)
1500 pF
tFALL
15
tRISE
10
60
tD1
40
tD2
20
5
0
-50
0
-25
0
25
50
75
100
125
4
6
TEMPERATURE (°C)
FIGURE 2-3:
Temperature.
Rise/Fall Times vs.
 2001-2012 Microchip Technology Inc.
8
10
12
14
16
18
VSUPPLY (V)
FIGURE 2-6:
Supply Voltage.
Propagation Delay Time vs.
DS21425C-page 5
TC4467/TC4468/TC4469
2.0
TYPICAL PERFORMANCE CURVES (CONTINUED)
Note:
TA = +25°C, with 4.5 V VDD18 V.
140
70
VDD = 12 V
VDD = 17.5 V
= 470 pF
VIN
INPUT RISING
DELAY TIME (nsec)
DELAY TIME (nsec)
120
100
tD2
80
60
tD1
INPUT FALLING
40
tD1
50
tD2
40
30
20
0
60
1
2
3
4
FIGURE 2-7:
Times.
5
6
VDRIVE (V)
7
8
20
-60
10
9
Input Amplitude vs. Delay
-40
-20
0
FIGURE 2-10:
vs. Temperatures.
20
40
60
°C)
80
100
120
Propagation Delay Times
3.5
2.5
VDD = 17.5 V
2.0
IQUIESCENT (mA)
IQUIESCENT (mA)
3.0
OUTPUTS = 0
1.5
1.0
OUTPUTS = 1
0.5
6
8
10
12
VSUPPLY (V)
14
16
OUTPUTS = 1
1.0
-40
-20
0
FIGURE 2-11:
vs. Temperature.
20
40
60
TJUNCTION (°C)
80
100
120
Quiescent Supply Current
35
35
30
30
TJ = +150°C
25
RDS(ON) (Ω)
25
RDS(ON) (Ω)
1.5
0
-60
18
FIGURE 2-8:
Quiescent Supply Current
vs. Supply Voltage.
20
TJ = +25°C
15
20
10
5
5
4
6
FIGURE 2-9:
Resistance.
DS21425C-page 6
8
10
12
V SUPPLY (V)
14
High-State Output
16
18
TJ = +150°C
15
10
0
OUTPUTS = 0
2.0
0.5
0
4
2.5
0
TJ = +25°C
4
6
FIGURE 2-12:
Resistance.
8
10
12
V SUPPLY (V)
14
16
18
Low-State Output
 2001-2012 Microchip Technology Inc.
TC4467/TC4468/TC4469
2.0
TYPICAL PERFORMANCE CURVES (CONTINUED)
Note:
(Load on single output only).
60
60
VDD = 18 V
50
1000 pF
40
30
50
00 kHz
20
200 kHz
10
0
100
FIGURE 2-13:
Capacitive Load.
30
20
100 pF
p
0
10
10,000
Supply Current vs.
100
1000
FREQUENCY (kHz)
FIGURE 2-16:
Frequency.
60
2 MHz
Supply Current vs.
2200 pF
VDD = 12 V
50
50
ISUPPLY (mA)
40
1 MHz
30
20
500 kHz
10
FIGURE 2-14:
Capacitive Load.
40
1000 pF
p
30
20
100 pF
10
200 kHz
0
100
20 kHz
0
10,000
1000
CLOAD (pF)
Supply Current vs.
10
100
FREQUENCY (kHz)
FIGURE 2-17:
Frequency.
60
1000
10,000
Supply Current vs.
60
VDD = 6 V
VDD = 6 V
50
50
40
40
30
ISUPPLY (mA)
ISUPPLY (mA)
10,000
60
VDD = 12 V
ISUPPLY (mA)
40
10
20 kHz
1000
CLOAD (pF)
2200 pF
50
1 MH
MHz
ISUPPLY (mA)
ISUPPLY (mA)
VDD = 18 V
2 MH
Hz
2 MHz
20
1 MHz
500 kHz
200 kHz
20 kHz
10
0
100
FIGURE 2-15:
Capacitive Load.
1000
CLOAD (pF)
Supply Current vs.
 2001-2012 Microchip Technology Inc.
2200 pF
30
20
1000 pF
10
100 pF
10,000
0
10
FIGURE 2-18:
Frequency.
100
1000
FREQUENCY (kHz)
10,000
Supply Current vs.
DS21425C-page 7
TC4467/TC4468/TC4469
3.0
PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.
TABLE 3-1:
PIN FUNCTION TABLE
14-Pin PDIP,
CERDIP
16-Pin SOIC
(Wide)
Symbol
Symbol
1A
1A
Input A for Driver 1, TTL/CMOS Compatible Input
1B
1B
Input B for Driver 1, TTL/CMOS Compatible Input
2A
2A
Input A for Driver 2, TTL/CMOS Compatible Input
2B
2B
Input B for Driver 2, TTL/CMOS Compatible Input
3A
3A
Input A for Driver 3, TTL/CMOS Compatible Input
Input B for Driver 3, TTL/CMOS Compatible Input
3B
3B
GND
GND
Description
Ground
—
GND
4A
4A
Input A for Driver 4, TTL/CMOS Compatible Input
Ground
4B
4B
Input B for Driver 4, TTL/CMOS Compatible Input
4Y
4Y
Output for Driver 4, CMOS Push-Pull Output
3Y
3Y
Output for Driver 3, CMOS Push-Pull Output
2Y
2Y
Output for Driver 2, CMOS Push-Pull Output
Output for Driver 1, CMOS Push-Pull Output
1Y
1Y
VDD
VDD
Supply Input, 4.5 V to 18 V
—
VDD
Supply Input, 4.5 V to 18 V
DS21425C-page 8
 2001-2012 Microchip Technology Inc.
TC4467/TC4468/TC4469
4.0
DETAILED DESCRIPTION
4.4
4.1
Supply Bypassing
The supply current versus frequency and supply
current versus capacitive load characteristic curves will
aid in determining power dissipation calculations.
Microchip Technology's CMOS drivers have greatly
reduced quiescent DC power consumption.
Large currents are required to charge and discharge
large capacitive loads quickly. For example, charging a
1000 pF load to 18 V in 25 nsec requires 0.72 A from
the device's power supply.
To ensure low supply impedance over a wide frequency
range, a 1 µF film capacitor in parallel with one or two
low-inductance, 0.1 µF ceramic disk capacitors with
short lead lengths (<0.5 in.) normally provide adequate
bypassing.
4.2
Grounding
The TC4467 and TC4469 contain inverting drivers.
Potential drops developed in common ground
impedances from input to output will appear as
negative feedback and degrade switching speed
characteristics. Instead, individual ground returns for
input and output circuits, or a ground plane, should be
used.
4.3
Input Stage
Power Dissipation
Input signal duty cycle, power supply voltage and load
type influence package power dissipation. Given power
dissipation and package thermal resistance, the maximum ambient operating temperature is easily
calculated. The 14-pin plastic package junction-toambient thermal resistance is 83.3°C/W. At +70°C, the
package is rated at 800 mW maximum dissipation.
Maximum allowable chip temperature is +150°C.
Three components make up total package power
dissipation:
1.
2.
3.
Load-caused dissipation (PL).
Quiescent power (PQ).
Transition power (PT).
A capacitive-load-caused dissipation (driving MOSFET
gates), is a direct function of frequency, capacitive load
and supply voltage. The power dissipation is:
The input voltage level changes the no-load or
quiescent supply current. The N-channel MOSFET
input stage transistor drives a 2.5 mA current source
load. With logic “0” outputs, maximum quiescent supply
current is 4 mA. Logic “1” output level signals reduce
quiescent current to 1.4 mA, maximum. Unused driver
inputs must be connected to VDD or VSS. Minimum
power dissipation occurs for logic “1” outputs.
EQUATION
The drivers are designed with 50 mV of hysteresis,
which provides clean transitions and minimizes output
stage current spiking when changing states. Input voltage thresholds are approximately 1.5 V, making any
voltage greater than 1.5 V, up to VDD, a logic “1” input.
Input current is less than 1 µA over this range.
A resistive-load-caused dissipation for groundreferenced loads is a function of duty cycle, load
current and load voltage. The power dissipation is:
2
P L = fCVS
f = Switching Frequency
C = Capacitive Load
V S = Supply Voltage
EQUATION
P L = D  V S – VL I L
D = Duty Cycle
V S = Supply Voltage
V L = Load Voltage
I L = Load Current
 2001-2012 Microchip Technology Inc.
DS21425C-page 9
TC4467/TC4468/TC4469
EQUATION
A resistive-load-caused dissipation for supplyreferenced loads is a function of duty cycle, load
current and output voltage. The power dissipation is
–9
P T = fV s  10  10 
C = 1000 pF Capacitive Load
V S = 15 V
D = 50%
f = 200 kHz
EQUATION
PL = DV O IL
D = Duty Cycle
V O = Device Output Voltage
I L = Load Current
PD =
=
=
=
Quiescent power dissipation depends on input signal
duty cycle. Logic HIGH outputs result in a lower power
dissipation mode, with only 0.6 mA total current drain
(all devices driven). Logic LOW outputs raise the
current to 4 mA maximum. The quiescent power
dissipation is:
Package Power Dissipation
P L + PQ + P T
45mW + 35mW + 30mW
110mW
Package power dissipation is the sum of load,
quiescent and transition power dissipations. An
example shows the relative magnitude for each term:
Maximum operating temperature is:
EQUATION
EQUATION
PQ = V S  D  I H  +  1 – D IL 
T J –  JA  P D  = 141C
I H = Quiescent Current with all outputs LOW
(4 mA max.)
I L = Quiescent Current with all outputs HIGH
(0.6 mA max.)
D = Duty Cycle
V S = Supply Voltage
T J = Maximum allowable junction temperature
(+150C 
 JA = Junction-to-ambient thernal resistance
(83.3C/W) 14-pin plastic package
Note:
Ambient operating temperature should not
exceed +85°C for "EJD" device or +125°C
for "MJD" device.
Transition power dissipation arises in the complimentary configuration (TC446X) because the output stage
N-channel and P-channel MOS transistors are ON
simultaneously for a very short period when the output
changes. The transition power dissipation is
approximately:
VDD
1 µF Film
Input: 100 kHz,
square wave,
tRISE = tFALL  10 nsec
0.1 µF Ceramic
14
1A
1B
2A
2B
3A
3B
4A
4B
1
2
13
3
4
12
5
6
11
8
9
10
+5 V
VOUT
470 pF
90%
Input
(A, B)
0V
10%
VDD
tD1
90%
tR
Output
0V
10%
tD2
90%
tF
10%
7
FIGURE 4-1:
DS21425C-page 10
Switching Time Test Circuit.
 2001-2012 Microchip Technology Inc.
TC4467/TC4468/TC4469
5.0
APPLICATIONS INFORMATION
+12 V
14
TC4469
1
13 Red
2
Motor
3
A
B
Airpax
#M82102-P2
7.5/Step
12
4
Gray
5
6
11 Yel
8
10 Blk
9
7
FIGURE 5-1:
Stepper Motor Drive.
+5 V to +15 V
14
18 V
Direction
Fwd
Rev
PWM Speed
TC4469
1
2
13
3
4
12
5
6
11
8
9
10
M
Motor
7
FIGURE 5-2:
Quad Driver For H-bridge Motor Control.
 2001-2012 Microchip Technology Inc.
DS21425C-page 11
TC4467/TC4468/TC4469
6.0
PACKAGING INFORMATION
6.1
Package Marking Information
14-Lead PDIP (300 mil)
Example:
XXXXXXXXXXXXXX
XXXXXXXXXXXXXX
YYWWNNN
14-Lead CERDIP (300 mil)
TC4467CPD
YYWWNNN
Example:
XXXXXXXXXXXXXX
XXXXXXXXXXXXXX
YYWWNNN
16-Lead SOIC (300 mil)
XXXXXXXXXXX
XXXXXXXXXXX
XXXXXXXXXXX
YYWWNNN
Legend: XX...X
Y
YY
WW
NNN
e3
*
Note:
DS21425C-page 12
TC4468EJD
YYWWNNN
Example:
TC4469COE
YYWWNNN
Customer-specific information
Year code (last digit of calendar year)
Year code (last 2 digits of calendar year)
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
Pb-free JEDEC designator for Matte Tin (Sn)
This package is Pb-free. The Pb-free JEDEC designator ( e3 )
can be found on the outer packaging for this package.
In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
 2001-2012 Microchip Technology Inc.
TC4467/TC4468/TC4469
14-Lead Plastic Dual In-line (P) – 300 mil (PDIP)
Note:
For the most current package drawings, please see the Microchip Packaging Specification located
at http://www.microchip.com/packaging
E1
D
2
n
1

E
A2
A
L
c
A1

B1
eB
p
B
Units
Dimension Limits
n
p
MIN
INCHES*
NOM
14
.100
.155
.130
MAX
MILLIMETERS
NOM
14
2.54
3.56
3.94
2.92
3.30
0.38
7.62
7.94
6.10
6.35
18.80
19.05
3.18
3.30
0.20
0.29
1.14
1.46
0.36
0.46
7.87
9.40
5
10
5
10
MIN
Number of Pins
Pitch
Top to Seating Plane
A
.140
.170
Molded Package Thickness
A2
.115
.145
Base to Seating Plane
A1
.015
Shoulder to Shoulder Width
E
.300
.313
.325
Molded Package Width
E1
.240
.250
.260
Overall Length
D
.740
.750
.760
Tip to Seating Plane
L
.125
.130
.135
c
Lead Thickness
.008
.012
.015
Upper Lead Width
B1
.045
.058
.070
Lower Lead Width
B
.014
.018
.022
eB
Overall Row Spacing
§
.310
.370
.430

Mold Draft Angle Top
5
10
15

Mold Draft Angle Bottom
5
10
15
* Controlling Parameter
§ Significant Characteristic
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed
.010” (0.254mm) per side.
JEDEC Equivalent: MS-001
Drawing No. C04-005
 2001-2012 Microchip Technology Inc.
MAX
4.32
3.68
8.26
6.60
19.30
3.43
0.38
1.78
0.56
10.92
15
15
DS21425C-page 13
TC4467/TC4468/TC4469
14-Lead Ceramic Dual In-line – 300 mil (CERDIP)
Note:
For the most current package drawings, please see the Microchip Packaging Specification located
at http://www.microchip.com/packaging
14-Pin CERDIP (Narrow)
PIN 1
.300 (7.62)
.230 (5.84)
.098 (2.49) MAX.
.030 (0.76) MIN.
.780 (19.81)
.740 (18.80)
.320 (8.13)
.290 (7.37)
.040 (1.02)
.020 (0.51)
.200 (5.08)
.160 (4.06)
.015 (0.38)
.150 (3.81) .008 (0.20)
MIN.
.200 (5.08)
.125 (3.18)
.110 (2.79)
.090 (2.29)
DS21425C-page 14
.065 (1.65)
.045 (1.14)
.020 (0.51)
.016 (0.41)
3° MIN.
.400 (10.16)
.320 (8.13)
Dimensions: inches (mm)
 2001-2012 Microchip Technology Inc.
TC4467/TC4468/TC4469
16-Lead Plastic Small Outline (SO) – Wide, 300 mil (SOIC)
Note:
For the most current package drawings, please see the Microchip Packaging Specification located
at http://www.microchip.com/packaging
E
p
E1
D
2
1
n
B
h

45
c
A2
A


L
Units
Dimension Limits
n
p
Number of Pins
Pitch
Overall Height
Molded Package Thickness
Standoff §
Overall Width
Molded Package Width
Overall Length
Chamfer Distance
Foot Length
Foot Angle
Lead Thickness
Lead Width
Mold Draft Angle Top
Mold Draft Angle Bottom
* Controlling Parameter
§ Significant Characteristic
A
A2
A1
E
E1
D
h
L

c
B


MIN
.093
.088
.004
.394
.291
.398
.010
.016
0
.009
.014
0
0
A1
INCHES*
NOM
16
.050
.099
.091
.008
.407
.295
.406
.020
.033
4
.011
.017
12
12
MAX
.104
.094
.012
.420
.299
.413
.029
.050
8
.013
.020
15
15
MILLIMETERS
NOM
16
1.27
2.36
2.50
2.24
2.31
0.10
0.20
10.01
10.34
7.39
7.49
10.10
10.30
0.25
0.50
0.41
0.84
0
4
0.23
0.28
0.36
0.42
0
12
0
12
MIN
MAX
2.64
2.39
0.30
10.67
7.59
10.49
0.74
1.27
8
0.33
0.51
15
15
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed
.010” (0.254mm) per side.
JEDEC Equivalent: MS-013
Drawing No. C04-102
 2001-2012 Microchip Technology Inc.
DS21425C-page 15
TC4467/TC4468/TC4469
7.0
REVISION HISTORY
Revision C (December 2012)
Added a note to each package outline drawing.
DS21425C-page 16
 2001-2012 Microchip Technology Inc.
TC4467/4468/4469
THE MICROCHIP WEB SITE
CUSTOMER SUPPORT
Microchip provides online support via our WWW site at
www.microchip.com. This web site is used as a means
to make files and information easily available to
customers. Accessible by using your favorite Internet
browser, the web site contains the following
information:
Users of Microchip products can receive assistance
through several channels:
• Product Support – Data sheets and errata,
application notes and sample programs, design
resources, user’s guides and hardware support
documents, latest software releases and archived
software
• General Technical Support – Frequently Asked
Questions (FAQ), technical support requests,
online discussion groups, Microchip consultant
program member listing
• Business of Microchip – Product selector and
ordering guides, latest Microchip press releases,
listing of seminars and events, listings of
Microchip sales offices, distributors and factory
representatives
•
•
•
•
Distributor or Representative
Local Sales Office
Field Application Engineer (FAE)
Technical Support
Customers
should
contact
their
distributor,
representative or field application engineer (FAE) for
support. Local sales offices are also available to help
customers. A listing of sales offices and locations is
included in the back of this document.
Technical support is available through the web site
at: http://microchip.com/support
CUSTOMER CHANGE NOTIFICATION
SERVICE
Microchip’s customer notification service helps keep
customers current on Microchip products. Subscribers
will receive e-mail notification whenever there are
changes, updates, revisions or errata related to a
specified product family or development tool of interest.
To register, access the Microchip web site at
www.microchip.com. Under “Support”, click on
“Customer Change Notification” and follow the
registration instructions.
 2001-2012 Microchip Technology Inc.
DS21425C-page 17
TC4467/4468/4469
READER RESPONSE
It is our intention to provide you with the best documentation possible to ensure successful use of your Microchip
product. If you wish to provide your comments on organization, clarity, subject matter, and ways in which our
documentation can better serve you, please FAX your comments to the Technical Publications Manager at
(480) 792-4150.
Please list the following information, and use this outline to provide us with your comments about this document.
TO:
Technical Publications Manager
RE:
Reader Response
Total Pages Sent ________
From: Name
Company
Address
City / State / ZIP / Country
Telephone: (_______) _________ - _________
FAX: (______) _________ - _________
Application (optional):
Would you like a reply?
Y
N
Device: TC4467/4468/4469
Literature Number: DS21425C
Questions:
1. What are the best features of this document?
2. How does this document meet your hardware and software development needs?
3. Do you find the organization of this document easy to follow? If not, why?
4. What additions to the document do you think would enhance the structure and subject?
5. What deletions from the document could be made without affecting the overall usefulness?
6. Is there any incorrect or misleading information (what and where)?
7. How would you improve this document?
DS21425C-page 18
 2001-2012 Microchip Technology Inc.
TC4467/TC4468/TC4469
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
PART NO.
Device
X
XX
Temperature
Range
Package
Examples:
a)
b)
c)
Device:
TC4467:
TC4468:
TC4469:
1.2A Quad MOSFET Driver, NAND
1.2A Quad MOSFET Driver, AND
1.2A Quad MOSFET Driver, AND/INV
C
E
M
0C to +70C
-40C to +85C (CERDIP only)
-55C to +125C (CERDIP only)
a)
b)
Temperature Range:
=
=
=
a)
b)
Package:
PD
JD
OE
OE713
=
=
=
=
Plastic DIP, (300 mil body), 14-lead
Ceramic DIP, (300 mil body), 14-lead
SOIC (Wide), 16-lead
SOIC (Wide), 16-lead (Tape and Reel)
TC4467COE: Commerical Temperature,
SOIC package.
TC4467CPD: Commercial Temperature,
PDIP package.
TC4467MJD: Military Temperature,
Ceramic DIP package.
TC4468COE713: Tape and Reel,
Commerical Temp., SOIC package.
TC4468CPD: Commercial Temperature,
PDIP package.
TC4469COE: Commercial Temperature,
SOIC package.
TC4469CPD: Commercial Temperature,
PDIP package.
Sales and Support
Data Sheets
Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and recommended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following:
1.
2.
Your local Microchip sales office
The Microchip Worldwide Site (www.microchip.com)
Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using.
New Customer Notification System
Register on our web site (www.microchip.com/cn) to receive the most current information on our products.
 2001-2012 Microchip Technology Inc.
DS21425C-page19
TC4467/TC4468/TC4469
NOTES:
DS21425C-page 20
 2001-2012 Microchip Technology Inc.
Note the following details of the code protection feature on Microchip devices:
•
Microchip products meet the specification contained in their particular Microchip Data Sheet.
•
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
•
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
•
Microchip is willing to work with the customer who is concerned about the integrity of their code.
•
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Information contained in this publication regarding device
applications and the like is provided only for your convenience
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR
WARRANTIES OF ANY KIND WHETHER EXPRESS OR
IMPLIED, WRITTEN OR ORAL, STATUTORY OR
OTHERWISE, RELATED TO THE INFORMATION,
INCLUDING BUT NOT LIMITED TO ITS CONDITION,
QUALITY, PERFORMANCE, MERCHANTABILITY OR
FITNESS FOR PURPOSE. Microchip disclaims all liability
arising from this information and its use. Use of Microchip
devices in life support and/or safety applications is entirely at
the buyer’s risk, and the buyer agrees to defend, indemnify and
hold harmless Microchip from any and all damages, claims,
suits, or expenses resulting from such use. No licenses are
conveyed, implicitly or otherwise, under any Microchip
intellectual property rights.
Trademarks
The Microchip name and logo, the Microchip logo, dsPIC,
FlashFlex, KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro,
PICSTART, PIC32 logo, rfPIC, SST, SST Logo, SuperFlash
and UNI/O are registered trademarks of Microchip Technology
Incorporated in the U.S.A. and other countries.
FilterLab, Hampshire, HI-TECH C, Linear Active Thermistor,
MTP, SEEVAL and The Embedded Control Solutions
Company are registered trademarks of Microchip Technology
Incorporated in the U.S.A.
Silicon Storage Technology is a registered trademark of
Microchip Technology Inc. in other countries.
Analog-for-the-Digital Age, Application Maestro, BodyCom,
chipKIT, chipKIT logo, CodeGuard, dsPICDEM,
dsPICDEM.net, dsPICworks, dsSPEAK, ECAN,
ECONOMONITOR, FanSense, HI-TIDE, In-Circuit Serial
Programming, ICSP, Mindi, MiWi, MPASM, MPF, MPLAB
Certified logo, MPLIB, MPLINK, mTouch, Omniscient Code
Generation, PICC, PICC-18, PICDEM, PICDEM.net, PICkit,
PICtail, REAL ICE, rfLAB, Select Mode, SQI, Serial Quad I/O,
Total Endurance, TSHARC, UniWinDriver, WiperLock, ZENA
and Z-Scale are trademarks of Microchip Technology
Incorporated in the U.S.A. and other countries.
SQTP is a service mark of Microchip Technology Incorporated
in the U.S.A.
GestIC and ULPP are registered trademarks of Microchip
Technology Germany II GmbH & Co. & KG, a subsidiary of
Microchip Technology Inc., in other countries.
All other trademarks mentioned herein are property of their
respective companies.
© 2001-2012, Microchip Technology Incorporated, Printed in
the U.S.A., All Rights Reserved.
Printed on recycled paper.
ISBN: 9781620767993
QUALITY MANAGEMENT SYSTEM
CERTIFIED BY DNV
== ISO/TS 16949 ==
 2001-2012 Microchip Technology Inc.
Microchip received ISO/TS-16949:2009 certification for its worldwide
headquarters, design and wafer fabrication facilities in Chandler and
Tempe, Arizona; Gresham, Oregon and design centers in California
and India. The Company’s quality system processes and procedures
are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping
devices, Serial EEPROMs, microperipherals, nonvolatile memory and
analog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.
DS21425C-page 21
Worldwide Sales and Service
AMERICAS
ASIA/PACIFIC
ASIA/PACIFIC
EUROPE
Corporate Office
2355 West Chandler Blvd.
Chandler, AZ 85224-6199
Tel: 480-792-7200
Fax: 480-792-7277
Technical Support:
http://www.microchip.com/
support
Web Address:
www.microchip.com
Asia Pacific Office
Suites 3707-14, 37th Floor
Tower 6, The Gateway
Harbour City, Kowloon
Hong Kong
Tel: 852-2401-1200
Fax: 852-2401-3431
India - Bangalore
Tel: 91-80-3090-4444
Fax: 91-80-3090-4123
India - New Delhi
Tel: 91-11-4160-8631
Fax: 91-11-4160-8632
Austria - Wels
Tel: 43-7242-2244-39
Fax: 43-7242-2244-393
Denmark - Copenhagen
Tel: 45-4450-2828
Fax: 45-4485-2829
India - Pune
Tel: 91-20-2566-1512
Fax: 91-20-2566-1513
France - Paris
Tel: 33-1-69-53-63-20
Fax: 33-1-69-30-90-79
Japan - Osaka
Tel: 81-66-152-7160
Fax: 81-66-152-9310
Germany - Munich
Tel: 49-89-627-144-0
Fax: 49-89-627-144-44
Atlanta
Duluth, GA
Tel: 678-957-9614
Fax: 678-957-1455
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Westborough, MA
Tel: 774-760-0087
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Tel: 630-285-0071
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Tel: 408-961-6444
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Toronto
Mississauga, Ontario,
Canada
Tel: 905-673-0699
Fax: 905-673-6509
Australia - Sydney
Tel: 61-2-9868-6733
Fax: 61-2-9868-6755
China - Beijing
Tel: 86-10-8569-7000
Fax: 86-10-8528-2104
China - Chengdu
Tel: 86-28-8665-5511
Fax: 86-28-8665-7889
China - Chongqing
Tel: 86-23-8980-9588
Fax: 86-23-8980-9500
Netherlands - Drunen
Tel: 31-416-690399
Fax: 31-416-690340
Korea - Daegu
Tel: 82-53-744-4301
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Spain - Madrid
Tel: 34-91-708-08-90
Fax: 34-91-708-08-91
China - Hangzhou
Tel: 86-571-2819-3187
Fax: 86-571-2819-3189
Korea - Seoul
Tel: 82-2-554-7200
Fax: 82-2-558-5932 or
82-2-558-5934
China - Hong Kong SAR
Tel: 852-2943-5100
Fax: 852-2401-3431
Malaysia - Kuala Lumpur
Tel: 60-3-6201-9857
Fax: 60-3-6201-9859
China - Nanjing
Tel: 86-25-8473-2460
Fax: 86-25-8473-2470
Malaysia - Penang
Tel: 60-4-227-8870
Fax: 60-4-227-4068
China - Qingdao
Tel: 86-532-8502-7355
Fax: 86-532-8502-7205
Philippines - Manila
Tel: 63-2-634-9065
Fax: 63-2-634-9069
China - Shanghai
Tel: 86-21-5407-5533
Fax: 86-21-5407-5066
Singapore
Tel: 65-6334-8870
Fax: 65-6334-8850
China - Shenyang
Tel: 86-24-2334-2829
Fax: 86-24-2334-2393
Taiwan - Hsin Chu
Tel: 886-3-5778-366
Fax: 886-3-5770-955
China - Shenzhen
Tel: 86-755-8864-2200
Fax: 86-755-8203-1760
Taiwan - Kaohsiung
Tel: 886-7-213-7828
Fax: 886-7-330-9305
China - Wuhan
Tel: 86-27-5980-5300
Fax: 86-27-5980-5118
Taiwan - Taipei
Tel: 886-2-2508-8600
Fax: 886-2-2508-0102
China - Xian
Tel: 86-29-8833-7252
Fax: 86-29-8833-7256
Thailand - Bangkok
Tel: 66-2-694-1351
Fax: 66-2-694-1350
UK - Wokingham
Tel: 44-118-921-5869
Fax: 44-118-921-5820
China - Xiamen
Tel: 86-592-2388138
Fax: 86-592-2388130
China - Zhuhai
Tel: 86-756-3210040
Fax: 86-756-3210049
DS21425C-page 22
Italy - Milan
Tel: 39-0331-742611
Fax: 39-0331-466781
Japan - Yokohama
Tel: 81-45-471- 6166
Fax: 81-45-471-6122
11/27/12
 2001-2012 Microchip Technology Inc.