MICROCHIP TC4468

M
TC4467/TC4468/TC4469
Logic-Input CMOS Quad Drivers
Features
General Description
• High Peak Output Current: 1.2 A
• Wide Operating Range:
- 4.5 V to 18 V
• Symmetrical Rise/Fall Times: 25 nsec
• Short, Equal Delay Times: 75 nsec
• Latch-proof. Will Withstand 500 mA Inductive
Kickback
• 3 Input Logic Choices:
- AND / NAND / AND + Inv
• ESD Protection on All Pins: 2 kV
The TC4467/TC4468/TC4469 devices are a family of
four-output CMOS buffers/MOSFET drivers with 1.2 A
peak drive capability. Unlike other MOSFET drivers,
these devices have two inputs for each output. The
inputs are configured as logic gates: NAND (TC4467),
AND (TC4468) and AND/INV (TC4469).
Applications
•
•
•
•
•
•
General Purpose CMOS Logic Buffer
Driving All Four MOSFETs in an H-Bridge
Direct Small Motor Driver
Relay or Peripheral Drivers
CCD Driver
Pin-Switching Network Driver
The TC4467/TC4468/TC4469 drivers can continuously
source up to 250 mA into ground referenced loads.
These devices are ideal for direct driving low current
motors or driving MOSFETs in a H-bridge configuration
for higher current motor drive (see Section 5.0 for
details). Having the logic gates onboard the driver can
help to reduce component count in many designs.
The TC4467/TC4468/TC4469 devices are very robust
and highly latch-up resistant. They can tolerate up to
5 V of noise spiking on the ground line and can handle
up to 0.5 A of reverse current on the driver outputs.
The TC4467/4468/4469 devices are available in
commercial, industrial and military temperature ranges.
Package Types
14-Pin PDIP/CERDIP
14 VDD
1A 1
1B 2
2A 3
2B 4
3A 5
13 1Y
TC4467
TC4468
TC4469
12 2Y
11 3Y
10 4Y
3B 6
9 4B
GND 7
8 4A
16-Pin SOIC (Wide)
16
15
14
13
VDD
VDD
12
3Y
11
4Y
7
10
4B
8
9
4A
1A
1B
2A
2B
1
2
3
4
3A
5
3B
6
GND
GND
TC4467
TC4468
TC4469
 2002 Microchip Technology Inc.
1Y
2Y
DS21425B-page 1
TC4467/TC4468/TC4469
Logic Diagrams
TC4467
TC4468
TC4469
VDD
VDD
VDD
14
14
1A 1
1B 2
1A
1B
1
2
13
2A
2B
3
4
12 2Y
3A
3B
5
6
11 3Y
2A 3
2B 4
3A 5
3B 6
4A
4B
8
9
10 4Y
4A 8
4B 9
7
GND
DS21425B-page 2
1Y
12 2Y
11
10
GND
VDD
14
13 1Y
7
TC446X
3Y
4Y
1A 1
1B 2
13 1Y
2A 3
2B 4
3A 5
3B 6
12 2Y
11
4A 8
4B 9
10
Output
3Y
4Y
7
GND
 2002 Microchip Technology Inc.
TC4467/TC4468/TC4469
1.0
ELECTRICAL
CHARACTERISTICS
†Notice: Stresses above those listed under "Maximum
Ratings" may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operation listings of this specification is not implied. Exposure
to maximum rating conditions for extended periods may affect
device reliability.
Absolute Maximum Ratings†
Supply Voltage ...............................................................+20 V
Input Voltage ............................. (GND – 5 V) to (VDD + 0.3 V)
Package Power Dissipation: (TA ≤ 70°C)
PDIP...................................................................800 mW
CERDIP .............................................................840 mW
SOIC ..................................................................760 mW
Package Thermal Resistance:
CERDIP R θJ-A ...................................................100°C/W
CERDIP R θJ-C .....................................................23°C/W
PDIP R θJ-A ..........................................................80°C/W
PDIP R θJ-C ..........................................................35°C/W
SOIC RθJ-A ..........................................................95°C/W
SOIC RθJ-C ..........................................................28°C/W
Operating Temperature Range:
C Version ................................................... 0°C to +70°C
E Version.................................................-40°C to +85°C
M Version ..............................................-55°C to +125°C
Maximum Chip Temperature ....................................... +150°C
Storage Temperature Range.........................-65°C to +150°C
ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Unless otherwise noted, TA = +25°C, with 4.5 V ≤ VDD ≤ 18 V.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Input
Logic 1, High Input Voltage
VIH
2.4
—
VDD
V
Note 3
Logic 0, Low Input Voltage
V IL
—
—
0.8
V
Note 3
Input Current
IIN
-1.0
—
+1.0
µA
High Output Voltage
VOH
VDD – 0.025
—
—
V
Low Output Voltage
VOL
—
—
0.15
V
ILOAD = 10 mA (Note 1)
Output Resistance
RO
—
10
15
Ω
IOUT = 10 mA, VDD = 18 V
Peak Output Current
IPK
—
1.2
—
A
Continuous Output Current
IDC
—
—
300
mA
—
—
500
I
—
500
—
mA
0 V ≤ VIN ≤ VDD
Output
Latch-Up Protection Withstand
Reverse Current
ILOAD = 100 µA (Note 1)
Single Output
Total Package
4.5 V ≤ VDD ≤ 16 V
Switching Time (Note 1)
Rise Time
tR
—
15
25
nsec
Figure 4-1
Fall Time
tF
—
15
25
nsec
Figure 4-1
Delay Time
tD1
—
40
75
nsec
Figure 4-1
Delay Time
tD2
—
40
75
nsec
Figure 4-1
Power Supply Current
IS
—
1.5
4
mA
Power Supply Voltage
VDD
4.5
—
18
V
Power Supply
Note
1:
2:
3:
Note 2
Totem pole outputs should not be paralleled because the propagation delay differences from one to the other could cause one driver to
drive high a few nanoseconds before another. The resulting current spike, although short, may decrease the life of the device. Switching
times are ensured by design.
When driving all four outputs simultaneously in the same direction, VDD will be limited to 16 V. This reduces the chance that internal dv/dt
will cause high-power dissipation in the device.
The input threshold has approximately 50 mV of hysteresis centered at approximately 1.5 V. Input rise times should be kept below 5 µsec
to avoid high internal peak currents during input transitions. Static input levels should also be maintained above the maximum, or below
the minimum, input levels specified in the "Electrical Characteristics" to avoid increased power dissipation in the device.
 2002 Microchip Technology Inc.
DS21425B-page 3
TC4467/TC4468/TC4469
ELECTRICAL SPECIFICATIONS (OPERATING TEMPERATURES)
Electrical Characteristics: Unless otherwise noted, over operating temperature range with 4.5 V ≤ VDD ≤ 18 V.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Logic 1, High Input Voltage
VIH
2.4
—
—
V
Logic 0, Low Input Voltage
V IL
—
—
0.8
V
Input Current
IIN
-10
—
10
µA
High Output Voltage
VOH
VDD – 0.025
—
—
V
Low Output Voltage
VOL
—
—
0.30
V
ILOAD = 10 mA (Note 1)
Output Resistance
RO
—
20
30
Ω
IOUT = 10 mA, VDD = 18 V
Peak Output Current
IPK
—
1.2
—
A
Continuous Output Current
IDC
—
—
300
mA
Input
Note 3
Note 3
0 V ≤ VIN ≤ VDD
Output
Latch-Up Protection Withstand
Reverse Current
—
—
500
I
—
500
—
mA
ILOAD = 100 µA (Note 1)
Single Output
Total Package
4.5 V ≤ VDD ≤ 16 V
Switching Time (Note 1)
Rise Time
tR
—
15
50
nsec
Figure 4-1
Fall Time
tF
—
15
50
nsec
Figure 4-1
Delay Time
tD1
—
40
100
nsec
Figure 4-1
Delay Time
tD2
—
40
100
nsec
Figure 4-1
Power Supply
Power Supply Current
IS
—
—
8
mA
Power Supply Voltage
VDD
4.5
—
18
V
Note
1:
2:
3:
Note 2
Totem pole outputs should not be paralleled because the propagation delay differences from one to the other could cause one driver to
drive high a few nanoseconds before another. The resulting current spike, although short, may decrease the life of the device. Switching
times are ensured by design.
When driving all four outputs simultaneously in the same direction, VDD will be limited to 16 V. This reduces the chance that internal dv/dt
will cause high-power dissipation in the device.
The input threshold has approximately 50 mV of hysteresis centered at approximately 1.5 V. Input rise times should be kept below 5 µsec
to avoid high internal peak currents during input transitions. Static input levels should also be maintained above the maximum, or below
the minimum, input levels specified in the "Electrical Characteristics" to avoid increased power dissipation in the device.
TRUTH TABLE
Part No.
TC4467 NAND
Inputs A
H
H
L
TC4468 AND
L
H
H
L
TC4469 AND/INV
L
H
H
L
L
Inputs B
H
L
H
L
H
L
H
L
H
L
H
L
Outputs TC446X
L
H
H
H
H
L
L
L
L
H
L
L
Legend: H = High
L = Low
DS21425B-page 4
 2002 Microchip Technology Inc.
TC4467/TC4468/TC4469
2.0
TYPICAL PERFORMANCE CURVES
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein are
not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note:
TA = +25°C, with 4.5 V ≤ VDD ≤ 18 V.
140
140
2200
0p
pF
120 2200 pF
100
1600 pF
p
80
1000 pF
100
tFALL (nsec)
tRISE (nsec)
120
60
1000 pF
60
470 pF
40
470 pF
20
100 pF
20
100 pF
p
3
5
7
FIGURE 2-1:
Voltage.
9
11
13
VSUPPLY (V)
15
0
19
17
5
7
9
11
13
VSUPPLY (V)
15
19
17
Fall Time vs. Supply
140
120
5V
120
5V
100
tFALL (nsec)
100
80
10 V
15 V
60
80
40
20
20
0
100
FIGURE 2-2:
Load.
0
100
10,000
1000
CLOAD (pF)
10 V
15 V
60
40
10,000
1000
CLOAD (pF)
FIGURE 2-5:
Load.
Rise Time vs. Capacitive
25
Fall Time vs. Capacitive
80
VSUPPLY = 17.5 V
CLOAD = 470 pF
CLOAD = 4
470 pF
DELAY TIME (nsec)
20
3
FIGURE 2-4:
Voltage.
Rise Time vs. Supply
140
tRISE (nsec)
80
40
0
TIME (nsec)
1500 pF
tFALL
15
tRISE
10
60
tD1
40
tD2
20
5
0
-50
0
-25
0
25
50
75
100
125
4
6
TEMPERATURE (°C)
FIGURE 2-3:
Temperature.
Rise/Fall Times vs.
 2002 Microchip Technology Inc.
8
10
12
14
16
18
VSUPPLY (V)
FIGURE 2-6:
Supply Voltage.
Propagation Delay Time vs.
DS21425B-page 5
TC4467/TC4468/TC4469
2.0
TYPICAL PERFORMANCE CURVES (CONTINUED)
Note:
TA = +25°C, with 4.5 V ≤ VDD ≤ 18 V.
140
70
VDD = 12 V
VDD = 17.5 V
= 470 pF
VIN
DELAY TIME (nsec)
DELAY TIME (nsec)
120
INPUT RISING
100
tD2
80
60
tD1
INPUT FALLING
40
tD1
50
tD2
40
30
20
0
60
1
2
3
4
FIGURE 2-7:
Times.
5
6
VDRIVE (V)
7
8
20
-60
10
9
-40
-20
0
FIGURE 2-10:
vs. Temperatures.
Input Amplitude vs. Delay
20
40
60
°C)
80
100
120
Propagation Delay Times
3.5
2.5
VDD = 17.5 V
2.0
IQUIESCENT (mA)
IQUIESCENT (mA)
3.0
OUTPUTS = 0
1.5
1.0
OUTPUTS = 1
0.5
6
8
10
12
VSUPPLY (V)
14
16
OUTPUTS = 1
1.0
-40
-20
0
FIGURE 2-11:
vs. Temperature.
20
40
60
TJUNCTION (°C)
80
100
120
Quiescent Supply Current
35
35
30
30
TJ = +150°C
25
RDS(ON) (Ω)
25
RDS(ON) (Ω)
1.5
0
-60
18
FIGURE 2-8:
Quiescent Supply Current
vs. Supply Voltage.
20
TJ = +25°C
15
20
10
5
5
4
6
FIGURE 2-9:
Resistance.
DS21425B-page 6
8
10
12
V SUPPLY (V)
14
High-State Output
16
18
TJ = +150°C
15
10
0
OUTPUTS = 0
2.0
0.5
0
4
2.5
0
TJ = +25°C
4
6
FIGURE 2-12:
Resistance.
8
10
12
V
(V)
SUPPLY
14
16
18
Low-State Output
 2002 Microchip Technology Inc.
TC4467/TC4468/TC4469
2.0
TYPICAL PERFORMANCE CURVES (CONTINUED)
Note:
(Load on single output only).
60
60
VDD = 18 V
VDD = 18 V
2 MH
Hz
50
2200 pF
50
1 MH
MHz
ISUPPLY (mA)
ISUPPLY (mA)
1000 pF
40
30
50
00 kHz
20
200 kHz
10
0
100
FIGURE 2-13:
Capacitive Load.
20
100 pF
p
0
10
10,000
100
1000
FREQUENCY (kHz)
FIGURE 2-16:
Frequency.
Supply Current vs.
60
2 MHz
Supply Current vs.
2200 pF
VDD = 12 V
50
50
ISUPPLY (mA)
40
1 MHz
30
20
500 kHz
10
FIGURE 2-14:
Capacitive Load.
40
1000 pF
p
30
20
100 pF
10
200 kHz
0
100
20 kHz
0
10,000
1000
CLOAD (pF)
10
100
FREQUENCY (kHz)
FIGURE 2-17:
Frequency.
Supply Current vs.
60
1000
10,000
Supply Current vs.
60
VDD = 6 V
VDD = 6 V
50
50
40
40
30
ISUPPLY (mA)
ISUPPLY (mA)
10,000
60
VDD = 12 V
ISUPPLY (mA)
30
10
20 kHz
1000
CLOAD (pF)
40
2 MHz
20
1 MHz
500 kHz
200 kHz
20 kHz
10
0
100
FIGURE 2-15:
Capacitive Load.
1000
CLOAD (pF)
Supply Current vs.
 2002 Microchip Technology Inc.
2200 pF
30
20
1000 pF
10
100 pF
10,000
0
10
FIGURE 2-18:
Frequency.
100
1000
FREQUENCY (kHz)
10,000
Supply Current vs.
DS21425B-page 7
TC4467/TC4468/TC4469
3.0
PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.
TABLE 3-1:
PIN FUNCTION TABLE
14-Pin PDIP,
CERDIP
16-Pin SOIC
(Wide)
Symbol
Symbol
1A
1A
Input A for Driver 1, TTL/CMOS Compatible Input
1B
1B
Input B for Driver 1, TTL/CMOS Compatible Input
2A
2A
Input A for Driver 2, TTL/CMOS Compatible Input
2B
2B
Input B for Driver 2, TTL/CMOS Compatible Input
3A
3A
Input A for Driver 3, TTL/CMOS Compatible Input
Input B for Driver 3, TTL/CMOS Compatible Input
Description
3B
3B
GND
GND
Ground
—
GND
Ground
4A
4A
Input A for Driver 4, TTL/CMOS Compatible Input
4B
4B
Input B for Driver 4, TTL/CMOS Compatible Input
4Y
4Y
Output for Driver 4, CMOS Push-Pull Output
3Y
3Y
Output for Driver 3, CMOS Push-Pull Output
2Y
2Y
Output for Driver 2, CMOS Push-Pull Output
1Y
1Y
Output for Driver 1, CMOS Push-Pull Output
VDD
VDD
Supply Input, 4.5 V to 18 V
—
VDD
Supply Input, 4.5 V to 18 V
DS21425B-page 8
 2002 Microchip Technology Inc.
TC4467/TC4468/TC4469
4.0
DETAILED DESCRIPTION
4.4
4.1
Supply Bypassing
The supply current versus frequency and supply
current versus capacitive load characteristic curves will
aid in determining power dissipation calculations.
Microchip Technology's CMOS drivers have greatly
reduced quiescent DC power consumption.
Large currents are required to charge and discharge
large capacitive loads quickly. For example, charging a
1000 pF load to 18 V in 25 nsec requires 0.72 A from
the device's power supply.
To ensure low supply impedance over a wide frequency
range, a 1 µF film capacitor in parallel with one or two
low-inductance, 0.1 µF ceramic disk capacitors with
short lead lengths (<0.5 in.) normally provide adequate
bypassing.
4.2
Grounding
The TC4467 and TC4469 contain inverting drivers.
Potential drops developed in common ground
impedances from input to output will appear as
negative feedback and degrade switching speed
characteristics. Instead, individual ground returns for
input and output circuits, or a ground plane, should be
used.
4.3
Input Stage
Power Dissipation
Input signal duty cycle, power supply voltage and load
type influence package power dissipation. Given power
dissipation and package thermal resistance, the maximum ambient operating temperature is easily
calculated. The 14-pin plastic package junction-toambient thermal resistance is 83.3°C/W. At +70°C, the
package is rated at 800 mW maximum dissipation.
Maximum allowable chip temperature is +150°C.
Three components make up total package power
dissipation:
1.
2.
3.
Load-caused dissipation (PL).
Quiescent power (PQ).
Transition power (PT).
A capacitive-load-caused dissipation (driving MOSFET
gates), is a direct function of frequency, capacitive load
and supply voltage. The power dissipation is:
The input voltage level changes the no-load or
quiescent supply current. The N-channel MOSFET
input stage transistor drives a 2.5 mA current source
load. With logic “0” outputs, maximum quiescent supply
current is 4 mA. Logic “1” output level signals reduce
quiescent current to 1.4 mA, maximum. Unused driver
inputs must be connected to V DD or VSS. Minimum
power dissipation occurs for logic “1” outputs.
EQUATION
The drivers are designed with 50 mV of hysteresis,
which provides clean transitions and minimizes output
stage current spiking when changing states. Input voltage thresholds are approximately 1.5 V, making any
voltage greater than 1.5 V, up to VDD, a logic “1” input.
Input current is less than 1 µA over this range.
A resistive-load-caused dissipation for groundreferenced loads is a function of duty cycle, load
current and load voltage. The power dissipation is:
2
P L = fCV S
f = Switching Frequency
C = Capacitive Load
V S = Supply Voltage
EQUATION
P L = D ( V S – V L )I L
D = Duty Cycle
V S = Supply Voltage
V L = Load Voltage
I L = Load Current
 2002 Microchip Technology Inc.
DS21425B-page 9
TC4467/TC4468/TC4469
EQUATION
A resistive-load-caused dissipation for supplyreferenced loads is a function of duty cycle, load
current and output voltage. The power dissipation is
–9
P T = fV s ( 10 × 10 )
C = 1000 pF Capacitive Load
V S = 15 V
D = 50%
f = 200 kHz
EQUATION
P L = DV O I L
D = Duty Cycle
V O = Device Output Voltage
I L = Load Current
PD =
=
=
=
Quiescent power dissipation depends on input signal
duty cycle. Logic HIGH outputs result in a lower power
dissipation mode, with only 0.6 mA total current drain
(all devices driven). Logic LOW outputs raise the
current to 4 mA maximum. The quiescent power
dissipation is:
Package Power Dissipation
PL + PQ + PT
45mW + 35mW + 30mW
110mW
Package power dissipation is the sum of load,
quiescent and transition power dissipations. An
example shows the relative magnitude for each term:
Maximum operating temperature is:
EQUATION
EQUATION
P Q = V S ( D ( IH ) + ( 1 – D )I L )
T J – θ JA ( P D ) = 141°C
I H = Quiescent Current with all outputs LOW
(4 mA max.)
I L = Quiescent Current with all outputs HIGH
(0.6 mA max.)
D = Duty Cycle
V S = Supply Voltage
T J = Maximum allowable junction temperature
(+150°C )
θ JA = Junction-to-ambient thernal resistance
(83.3°C/W) 14-pin plastic package
Note:
Ambient operating temperature should not
exceed +85°C for "EJD" device or +125°C
for "MJD" device.
Transition power dissipation arises in the complimentary configuration (TC446X) because the output stage
N-channel and P-channel MOS transistors are ON
simultaneously for a very short period when the output
changes. The transition power dissipation is
approximately:
VDD
1 µF Film
Input: 100 kHz,
square wave,
tRISE = tFALL ≤ 10 nsec
0.1 µF Ceramic
14
1A
1B
2A
2B
3A
3B
4A
4B
1
2
13
3
4
12
5
6
11
8
9
10
VOUT
470 pF
+5 V
90%
Input
(A, B)
0V
VDD
10%
tD1
90%
tR
Output
0V
10%
tD2
90%
tF
10%
7
FIGURE 4-1:
DS21425B-page 10
Switching Time Test Circuit.
 2002 Microchip Technology Inc.
TC4467/TC4468/TC4469
5.0
APPLICATIONS INFORMATION
+12 V
14
TC4469
1
13 Red
2
Motor
3
A
B
Airpax
#M82102-P2
7.5/Step
12
4
Gray
5
11 Yel
6
8
10 Blk
9
7
FIGURE 5-1:
Stepper Motor Drive.
+5 V to +15 V
14
18 V
Direction
Fwd
Rev
PWM Speed
1
2
TC4469
13
3
4
12
5
6
11
8
9
10
M
Motor
7
FIGURE 5-2:
Quad Driver For H-bridge Motor Control.
 2002 Microchip Technology Inc.
DS21425B-page 11
TC4467/TC4468/TC4469
6.0
PACKAGING INFORMATION
6.1
Package Marking Information
14-Lead PDIP (300 mil)
Example:
TC4467CPD
XXXXXXXXXXXXXX
XXXXXXXXXXXXXX
YYWWNNN
14-Lead CERDIP (300 mil)
YYWWNNN
Example:
XXXXXXXXXXXXXX
XXXXXXXXXXXXXX
YYWWNNN
16-Lead SOIC (300 mil)
XXXXXXXXXXX
XXXXXXXXXXX
XXXXXXXXXXX
YYWWNNN
Legend: XX...X
YY
WW
NNN
Note:
*
TC4468EJD
YYWWNNN
Example:
TC4469COE
YYWWNNN
Customer specific information*
Year code (last 2 digits of calendar year)
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line thus limiting the number of available characters
for customer specific information.
Standard OTP marking consists of Microchip part number, year code, week code, facility code, mask
rev#, and assembly code.
DS21425B-page 12
 2002 Microchip Technology Inc.
TC4467/TC4468/TC4469
14-Lead Plastic Dual In-line (P) – 300 mil (PDIP)
E1
D
2
n
1
α
E
A2
A
L
c
A1
β
eB
B1
p
B
Units
Dimension Limits
n
p
MIN
INCHES*
NOM
14
.100
.155
.130
MAX
MILLIMETERS
NOM
14
2.54
3.56
3.94
2.92
3.30
0.38
7.62
7.94
6.10
6.35
18.80
19.05
3.18
3.30
0.20
0.29
1.14
1.46
0.36
0.46
7.87
9.40
5
10
5
10
MIN
Number of Pins
Pitch
Top to Seating Plane
A
.140
.170
Molded Package Thickness
A2
.115
.145
Base to Seating Plane
A1
.015
Shoulder to Shoulder Width
E
.300
.313
.325
Molded Package Width
E1
.240
.250
.260
Overall Length
D
.740
.750
.760
Tip to Seating Plane
L
.125
.130
.135
c
Lead Thickness
.008
.012
.015
Upper Lead Width
B1
.045
.058
.070
Lower Lead Width
B
.014
.018
.022
Overall Row Spacing
§
eB
.310
.370
.430
α
Mold Draft Angle Top
5
10
15
β
Mold Draft Angle Bottom
5
10
15
* Controlling Parameter
§ Significant Characteristic
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed
.010” (0.254mm) per side.
JEDEC Equivalent: MS-001
Drawing No. C04-005
 2002 Microchip Technology Inc.
MAX
4.32
3.68
8.26
6.60
19.30
3.43
0.38
1.78
0.56
10.92
15
15
DS21425B-page 13
TC4467/TC4468/TC4469
14-Lead Ceramic Dual In-line – 300 mil (CERDIP)
14-Pin CERDIP (Narrow)
PIN 1
.300 (7.62)
.230 (5.84)
.098 (2.49) MAX.
.030 (0.76) MIN.
.780 (19.81)
.740 (18.80)
.320 (8.13)
.290 (7.37)
.040 (1.02)
.020 (0.51)
.200 (5.08)
.160 (4.06)
.015 (0.38)
.150 (3.81) .008 (0.20)
MIN.
.200 (5.08)
.125 (3.18)
.110 (2.79)
.090 (2.29)
DS21425B-page 14
.065 (1.65)
.045 (1.14)
.020 (0.51)
.016 (0.41)
3° MIN.
.400 (10.16)
.320 (8.13)
Dimensions: inches (mm)
 2002 Microchip Technology Inc.
TC4467/TC4468/TC4469
16-Lead Plastic Small Outline (SO) – Wide, 300 mil (SOIC)
E
p
E1
D
2
1
n
B
h
α
45°
c
A2
A
φ
β
L
Units
Dimension Limits
n
p
Number of Pins
Pitch
Overall Height
Molded Package Thickness
Standoff §
Overall Width
Molded Package Width
Overall Length
Chamfer Distance
Foot Length
Foot Angle
Lead Thickness
Lead Width
Mold Draft Angle Top
Mold Draft Angle Bottom
* Controlling Parameter
§ Significant Characteristic
A
A2
A1
E
E1
D
h
L
φ
c
B
α
β
MIN
.093
.088
.004
.394
.291
.398
.010
.016
0
.009
.014
0
0
A1
INCHES*
NOM
16
.050
.099
.091
.008
.407
.295
.406
.020
.033
4
.011
.017
12
12
MAX
.104
.094
.012
.420
.299
.413
.029
.050
8
.013
.020
15
15
MILLIMETERS
NOM
16
1.27
2.36
2.50
2.24
2.31
0.10
0.20
10.01
10.34
7.39
7.49
10.10
10.30
0.25
0.50
0.41
0.84
0
4
0.23
0.28
0.36
0.42
0
12
0
12
MIN
MAX
2.64
2.39
0.30
10.67
7.59
10.49
0.74
1.27
8
0.33
0.51
15
15
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed
.010” (0.254mm) per side.
JEDEC Equivalent: MS-013
Drawing No. C04-102
 2002 Microchip Technology Inc.
DS21425B-page 15
TC4467/TC4468/TC4469
NOTES:
DS21425B-page 16
 2002 Microchip Technology Inc.
TC4467/TC4468/TC4469
ON-LINE SUPPORT
Microchip provides on-line support on the Microchip
World Wide Web (WWW) site.
The web site is used by Microchip as a means to make
files and information easily available to customers. To
view the site, the user must have access to the Internet
and a web browser, such as Netscape or Microsoft
Explorer. Files are also available for FTP download
from our FTP site.
Connecting to the Microchip Internet Web Site
Systems Information and Upgrade Hot Line
The Systems Information and Upgrade Line provides
system users a listing of the latest versions of all of
Microchip's development systems software products.
Plus, this line provides information on how customers
can receive any currently available upgrade kits.The
Hot Line Numbers are:
1-800-755-2345 for U.S. and most of Canada, and
1-480-792-7302 for the rest of the world.
013001
The Microchip web site is available by using your
favorite Internet browser to attach to:
www.microchip.com
The file transfer site is available by using an FTP service to connect to:
ftp://ftp.microchip.com
The web site and file transfer site provide a variety of
services. Users may download files for the latest
Development Tools, Data Sheets, Application Notes,
User's Guides, Articles and Sample Programs. A variety of Microchip specific business information is also
available, including listings of Microchip sales offices,
distributors and factory representatives. Other data
available for consideration is:
• Latest Microchip Press Releases
• Technical Support Section with Frequently Asked
Questions
• Design Tips
• Device Errata
• Job Postings
• Microchip Consultant Program Member Listing
• Links to other useful web sites related to
Microchip Products
• Conferences for products, Development Systems,
technical information and more
• Listing of seminars and events
 2002 Microchip Technology Inc.
DS21425B-page17
TC4467/TC4468/TC4469
READER RESPONSE
It is our intention to provide you with the best documentation possible to ensure successful use of your Microchip product. If you wish to provide your comments on organization, clarity, subject matter, and ways in which our documentation
can better serve you, please FAX your comments to the Technical Publications Manager at (480) 792-4150.
Please list the following information, and use this outline to provide us with your comments about this Data Sheet.
To:
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RE:
Reader Response
Total Pages Sent
From: Name
Company
Address
City / State / ZIP / Country
Telephone: (_______) _________ - _________
FAX: (______) _________ - _________
Application (optional):
Would you like a reply?
Y
Device: TC4467/TC4468/TC4469
N
Literature Number: DS21425B
Questions:
1. What are the best features of this document?
2. How does this document meet your hardware and software development needs?
3. Do you find the organization of this data sheet easy to follow? If not, why?
4. What additions to the data sheet do you think would enhance the structure and subject?
5. What deletions from the data sheet could be made without affecting the overall usefulness?
6. Is there any incorrect or misleading information (what and where)?
7. How would you improve this document?
8. How would you improve our software, systems, and silicon products?
DS21425B-page18
 2002 Microchip Technology Inc.
TC4467/TC4468/TC4469
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
PART NO.
Device
X
XX
Temperature
Range
Package
Examples:
a)
b)
c)
Device:
TC4467:
TC4468:
TC4469:
1.2A Quad MOSFET Driver, NAND
1.2A Quad MOSFET Driver, AND
1.2A Quad MOSFET Driver, AND/INV
C
E
M
0°C to +70°C
-40°C to +85°C (CERDIP only)
-55°C to +125°C (CERDIP only)
a)
b)
Temperature Range:
=
=
=
a)
b)
Package:
PD
JD
OE
OE713
=
=
=
=
Plastic DIP, (300 mil body), 14-lead
Ceramic DIP, (300 mil body), 14-lead
SOIC (Wide), 16-lead
SOIC (Wide), 16-lead (Tape and Reel)
TC4467COE: Commerical Temperature,
SOIC package.
TC4467CPD: Commercial Temperature,
PDIP package.
TC4467MJD: Military Temperature,
Ceramic DIP package.
TC4468COE713: Tape and Reel,
Commerical Temp., SOIC package.
TC4468CPD: Commercial Temperature,
PDIP package.
TC4469COE: Commercial Temperature,
SOIC package.
TC4469CPD: Commercial Temperature,
PDIP package.
Sales and Support
Data Sheets
Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and recommended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following:
1.
2.
3.
Your local Microchip sales office
The Microchip Corporate Literature Center U.S. FAX: (480) 792-7277
The Microchip Worldwide Site (www.microchip.com)
Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using.
New Customer Notification System
Register on our web site (www.microchip.com/cn) to receive the most current information on our products.
 2002 Microchip Technology Inc.
DS21425B-page19
TC4467/TC4468/TC4469
NOTES:
DS21425B-page 20
 2002 Microchip Technology Inc.
TC4467/TC4468/TC4469
Information contained in this publication regarding device
applications and the like is intended through suggestion only
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
No representation or warranty is given and no liability is
assumed by Microchip Technology Incorporated with respect
to the accuracy or use of such information, or infringement of
patents or other intellectual property rights arising from such
use or otherwise. Use of Microchip’s products as critical components in life support systems is not authorized except with
express written approval by Microchip. No licenses are conveyed, implicitly or otherwise, under any intellectual property
rights.
Trademarks
The Microchip name and logo, the Microchip logo, FilterLab,
KEELOQ, microID, MPLAB, MXDEV, PIC, PICmicro,
PICMASTER, PICSTART, PRO MATE, SEEVAL and The
Embedded Control Solutions Company are registered trademarks of Microchip Technology Incorporated in the U.S.A. and
other countries.
dsPIC, dsPICDEM.net, ECONOMONITOR, FanSense,
FlexROM, fuzzyLAB, In-Circuit Serial Programming, ICSP,
ICEPIC, microPort, Migratable Memory, MPASM, MPLIB,
MPLINK, MPSIM, MXLAB, PICC, PICDEM, PICDEM.net,
rfPIC, Select Mode and Total Endurance are trademarks of
Microchip Technology Incorporated in the U.S.A.
Serialized Quick Turn Programming (SQTP) is a service mark
of Microchip Technology Incorporated in the U.S.A.
All other trademarks mentioned herein are property of their
respective companies.
© 2002, Microchip Technology Incorporated, Printed in the
U.S.A., All Rights Reserved.
Printed on recycled paper.
Microchip received QS-9000 quality system
certification for its worldwide headquarters,
design and wafer fabrication facilities in
Chandler and Tempe, Arizona in July 1999
and Mountain View, California in March 2002.
The Company’s quality system processes and
procedures are QS-9000 compliant for its
PICmicro® 8-bit MCUs, KEELOQ® code hopping
devices, Serial EEPROMs, microperipherals,
non-volatile memory and analog products. In
addition, Microchip’s quality system for the
design and manufacture of development
systems is ISO 9001 certified.
 2002 Microchip Technology Inc.
DS21425B-page 21
M
WORLDWIDE SALES AND SERVICE
AMERICAS
ASIA/PACIFIC
Corporate Office
Australia
2355 West Chandler Blvd.
Chandler, AZ 85224-6199
Tel: 480-792-7200 Fax: 480-792-7277
Technical Support: 480-792-7627
Web Address: http://www.microchip.com
Microchip Technology Australia Pty Ltd
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Epping 2121, NSW
Australia
Tel: 61-2-9868-6733 Fax: 61-2-9868-6755
Rocky Mountain
China - Beijing
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Microchip Technology Consulting (Shanghai)
Co., Ltd., Beijing Liaison Office
Unit 915
Bei Hai Wan Tai Bldg.
No. 6 Chaoyangmen Beidajie
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Tel: 86-10-85282100 Fax: 86-10-85282104
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Tel: 86-591-7503506 Fax: 86-591-7503521
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Co., Ltd.
Room 701, Bldg. B
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Tel: 86-21-6275-5700 Fax: 86-21-6275-5060
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Taiwan
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Tel: 886-2-2717-7175 Fax: 886-2-2545-0139
EUROPE
Denmark
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France
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Germany
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Italy
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United Kingdom
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Tel: 44 118 921 5869 Fax: 44-118 921-5820
Austria
Microchip Technology Austria GmbH
Durisolstrasse 2
A-4600 Wels
Austria
Tel: 43-7242-2244-399
Fax: 43-7242-2244-393
05/16/02
DS21425B-page 22
 2002 Microchip Technology Inc.