Data Sheet

INTEGRATED CIRCUITS
DATA SHEET
TDA1517; TDA1517P
2 x 6 W stereo power amplifier
Product specification
Supersedes data of 2002 Jan 17
2004 Feb 18
NXP Semiconductors
Product specification
2 x 6 W stereo power amplifier
TDA1517; TDA1517P
FEATURES
GENERAL DESCRIPTION
• Requires very few external components
The TDA1517 is an integrated class-B dual output
amplifier in a plastic single in-line medium power package
with fin (SIL9MPF), a plastic rectangular-bent single in-line
medium power package with fin (RBS9MPF) or a plastic
heat-dissipating dual in-line package (HDIP18). The
device is primarily developed for multi-media applications.
• High output power
• Fixed gain
• Good ripple rejection
• Mute/standby switch
• AC and DC short-circuit safe to ground and VP
• Thermally protected
• Reverse polarity safe
• Capability to handle high energy on outputs (VP = 0 V)
• No switch-on/switch-off plop
• Electrostatic discharge protection.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VP
supply voltage
6.0
14.4
18.0
V
IORM
repetitive peak output current
−
−
2.5
A
Iq(tot)
total quiescent current
−
40
80
mA
Isb
standby current
−
0.1
100
μA
Isw
switch-on current
−
−
40
μA
|ZI|
input impedance
Po
output power
50
−
−
kΩ
RL = 4 Ω; THD = 0.5%
−
5
−
W
RL = 4 Ω; THD = 10%
−
6
−
W
SVRR
supply voltage ripple rejection
48
−
−
dB
αcs
channel separation
40
−
−
dB
Gv
closed loop voltage gain
19
20
21
dB
Vno(rms)
noise output voltage (RMS value)
−
50
−
μV
Tc
crystal temperature
−
−
150
°C
fi = 100 Hz to 10 kHz
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
DESCRIPTION
VERSION
TDA1517/N3
SIL9MPF
plastic single in-line medium power package with fin; 9 leads
SOT110-1
TDA1517/N3/S5
RBS9MPF
plastic rectangular-bent single in-line medium power package with
fin; 9 leads
SOT352-1
plastic heat-dissipating dual in-line package; 18 leads
SOT398-1
TDA1517P
2004 Feb 18
HDIP18
2
NXP Semiconductors
Product specification
2 x 6 W stereo power amplifier
TDA1517; TDA1517P
BLOCK DIAGRAM
handbook, full pagewidth
non-inverting
input 1
1
mute switch
Cm
60
kΩ
4
VA
output 1
2
kΩ
power stage
18 kΩ
VP
8
stand-by
switch
mute/stand-by
switch input
stand-by
reference
voltage
VA
15 kΩ
x1
supply voltage
ripple rejection
output
mute
switch
3
15 kΩ
mute
reference
voltage
TDA1517
18 kΩ
2
kΩ
non-inverting
input 2
6
VA
9
60
kΩ
input
reference
voltage
mute switch
Cm
power stage
signal
ground
2
power
ground
5 (substrate)
7
MLC351
VP
SGND
PGND
Fig.1 Block diagram.
2004 Feb 18
3
output 2
NXP Semiconductors
Product specification
2 x 6 W stereo power amplifier
TDA1517; TDA1517P
PINNING
SYMBOL
PIN
DESCRIPTION
−INV1
1
non-inverting input 1
SGND
2
signal ground
SVRR
3
supply voltage ripple rejection output
OUT1
4
output 1
PGND
5
power ground
OUT2
6
output 2
VP
7
supply voltage
M/SS
8
mute/standby switch input
−INV2
9
non-inverting input 2
handbook, halfpage
INV1
1
SGND
handbook, halfpage
INV1
1
18
2
SGND
2
17
SVRR
3
SVRR
3
16
OUT1
4
OUT1
4
15
PGND
5
PGND
5
OUT2
6
OUT2
6
13
VP
7
VP
7
12
M/SS
8
M/SS
8
11
INV2
9
INV2
9
10
TDA1517
MLC352
TDA1517P
14
MLC353
Pins 10 to 18 should be connected to GND or floating.
Fig.2
Pin configuration for SOT110-1 and
SOT352-1.
Fig.3 Pin configuration for SOT398-1.
FUNCTIONAL DESCRIPTION
The TDA1517 contains two identical amplifiers with
differential input stages. The gain of each amplifier is fixed
at 20 dB. A special feature of the device is the
mute/standby switch which has the following features:
• Low standby current (<100 μA)
• Low mute/standby switching current
(low cost supply switch)
• Mute condition.
2004 Feb 18
4
NXP Semiconductors
Product specification
2 x 6 W stereo power amplifier
TDA1517; TDA1517P
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
VP
PARAMETER
CONDITIONS
supply voltage
MIN.
MAX.
UNIT
operating
−
18
V
no signal
−
20
V
VP(sc)
AC and DC short-circuit safe voltage
−
18
V
VP(r)
reverse polarity
−
6
V
ERGO
energy handling capability at outputs
−
200
mJ
IOSM
non-repetitive peak output current
−
4
A
IORM
repetitive peak output current
−
2.5
A
Ptot
total power dissipation
−
15
W
Tstg
storage temperature
−55
+150
°C
Tamb
operating ambient temperature
−40
+85
°C
Tc
crystal temperature
−
150
°C
VP = 0 V
see Fig.4
THERMAL RESISTANCE
SYMBOL
TYPE NUMBER
PARAMETER
VALUE
UNIT
Rth(j-c)
TDA1517/N3; TDA1517/N3/S5
thermal resistance from junction to case
8
K/W
Rth(j-p)
TDA1517P
thermal resistance from junction to pins
15
K/W
Rth(j-a)
TDA1517/N3; TDA1517/N3/S5; thermal resistance from junction to
TDA1517P
ambient
50
K/W
MLC354
18
handbook, halfpage
P
(W)
12
(1)
(2)
6
0
25
0
50
100
150
o
T amb ( C)
(1) Rth j-c = 8 K/W.
(2) Rth j-p = 15 K/W.
Fig.4 Power derating curve.
2004 Feb 18
5
NXP Semiconductors
Product specification
2 x 6 W stereo power amplifier
TDA1517; TDA1517P
DC CHARACTERISTICS
VP = 14.4 V; Tamb = 25 °C; measured in Fig.6; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
18.0
V
Supply
VP
supply voltage
Iq(tot)
VO
note 1
6.0
14.4
total quiescent current
−
40
80
mA
DC output voltage
−
6.95
−
V
see Fig.5
8.5
−
−
V
VI(max) = 1 V; fi = 20 Hz to 15 kHz
−
−
2
mV
Mute/standby switch
V8
switch-on voltage level
Mute condition
VO
output signal in mute position
Standby condition
Isb
DC current in standby condition
−
−
100
μA
Vsw
switch-on current
−
12
40
μA
Note
1. The circuit is DC adjusted at VP = 6 to 18 V and AC operating at VP = 8.5 to 18 V.
2004 Feb 18
6
NXP Semiconductors
Product specification
2 x 6 W stereo power amplifier
TDA1517; TDA1517P
AC CHARACTERISTICS
VP = 14.4 V; RL = 4 Ω; f = 1 kHz; Tamb = 25 °C; measured in Fig.6; unless otherwise specified.
SYMBOL
Po
PARAMETER
output power
THD
total harmonic distortion
CONDITIONS
MIN.
TYP.
MAX.
UNIT
THD = 0.5%; note 1
4
5
−
W
THD = 10%; note 1
5.5
6.0
−
W
Po = 1 W
−
0.1
−
%
flr
low frequency roll-off
at −3 dB; note 2
−
45
−
Hz
fhr
high frequency roll-off
at −1 dB
20
−
−
kHz
Gv
closed loop voltage gain
19
20
21
dB
SVRR
supply voltage ripple rejection
on
48
−
−
dB
mute
48
−
−
dB
standby
80
−
−
dB
50
60
75
kΩ
−
50
−
μV
|Zi|
input impedance
Vno
noise output voltage
note 3
on
Rs = 0 Ω; note 4
on
Rs = 10 Ω; note 4
−
70
100
μV
mute
note 5
−
50
−
μV
Rs = 10 Ω
40
−
−
dB
−
0.1
1
dB
αcs
channel separation
|ΔGv|
channel unbalance
Notes
1. Output power is measured directly at the output pins of the IC.
2. Frequency response externally fixed.
3. Ripple rejection measured at the output with a source impedance of 0 Ω, maximum ripple amplitude of 2 V (p-p) and
a frequency between 100 Hz and 10 kHz.
4. Noise voltage measured in a bandwidth of 20 Hz to 20 kHz.
5. Noise output voltage independent of Rs (VI = 0 V).
2004 Feb 18
7
NXP Semiconductors
Product specification
2 x 6 W stereo power amplifier
;;;;;;;
;;;;;;;
;;;;;;;
;;;;;;;
;;;;;;;
;;;;;;;
;;;;;;;
;;;;;;;
MLC355
handbook, halfpage
18
V11
(V)
TDA1517; TDA1517P
ON (IP = 40 mA)
8.5
6.4
mute (IP = 40 mA)
3.3
2
standby (I P
0
100 μA)
Fig.5 Standby, mute and on conditions.
APPLICATION INFORMATION
standby switch
handbook, full pagewidth
VP
100
μF
100 nF
3
input
reference
voltage
8
2200
μF
7
internal
1/2 V P
TDA1517
220 nF
input 1
20 dB
60 kΩ
20 dB
1
60 kΩ
9
2
5
6
4
MLC356
signal
ground
power
ground
1000 μF
1000 μF
Fig.6 Application circuit diagram.
2004 Feb 18
8
220 nF
input 2
NXP Semiconductors
Product specification
2 x 6 W stereo power amplifier
TDA1517; TDA1517P
PACKAGE OUTLINES
SIL9MPF: plastic single in-line medium power package with fin; 9 leads
SOT110-1
D
D1
q
A2
P1
P
A3
q1
q2
A
A4
seating plane
E
pin 1 index
c
L
1
9
b
e
Z
Q
b2
w M
b1
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A2
max.
A3
A4
b
b1
b2
c
D (1)
D1
E (1)
e
L
P
P1
Q
q
q1
q2
w
Z (1)
max.
mm
18.5
17.8
3.7
8.7
8.0
15.8
15.4
1.40
1.14
0.67
0.50
1.40
1.14
0.48
0.38
21.8
21.4
21.4
20.7
6.48
6.20
2.54
3.9
3.4
2.75
2.50
3.4
3.2
1.75
1.55
15.1
14.9
4.4
4.2
5.9
5.7
0.25
1
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
JEITA
ISSUE DATE
95-02-25
03-03-12
SOT110-1
2004 Feb 18
EUROPEAN
PROJECTION
9
NXP Semiconductors
Product specification
2 x 6 W stereo power amplifier
TDA1517; TDA1517P
RBS9MPF: plastic rectangular-bent single in-line medium power package with fin; 9 leads
SOT352-1
D
L
1
9
b
e
Z
b2
w M
b1
D1
A2
q
P
P1
Q
A3
q1
q2
A
E
pin 1 index
c
seating plane
v M
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT A (1)
mm
14.45
13.95
A2
max.
A3
b
b1
b2
c
D (2)
D1
E (2)
e
L
P
P1
Q
q
q1
q2
v
w
Z (2)
max.
3.7
8.7
8.0
1.40
1.14
0.67
0.50
1.40
1.14
0.48
0.38
21.8
21.4
21.4
20.7
6.48
6.20
2.54
3.8
3.3
2.75
2.50
3.4
3.2
1.75
1.55
15.1
14.9
4.4
4.2
5.9
5.7
0.6
0.25
1
Notes
1. Dimension is specified at seating plane.
2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
JEITA
ISSUE DATE
97-12-16
03-03-12
SOT352-1
2004 Feb 18
EUROPEAN
PROJECTION
10
NXP Semiconductors
Product specification
2 x 6 W stereo power amplifier
TDA1517; TDA1517P
HDIP18: plastic heat-dissipating dual in-line package; 18 leads
SOT398-1
D
seating plane
ME
A2
A
A1
L
e
Z
c
w M
b1
(e 1)
b2
b
10
18
MH
pin 1 index
E
9
1
0
5
10 mm
scale
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
UNIT
A
max.
A1
min.
A2
max.
b
b1
b2
c
D (1)
E (1)
e
e1
L
ME
MH
w
Z (1)
max.
mm
4.7
0.51
3.7
1.40
1.14
0.67
0.50
1.05
0.75
0.47
0.38
21.85
21.35
6.5
6.2
2.54
7.62
3.9
3.1
8.32
8.02
8.7
7.7
0.25
1
inches
0.19
0.02
0.15
0.06
0.04
0.03
0.02
0.04
0.03
0.02
0.01
0.87
0.84
0.26
0.24
0.1
0.3
0.15
0.12
0.33
0.32
0.34
0.30
0.01
0.04
Note
1. Plastic or metal protrusions of 0.25 mm (0.01 inch) maximum per side are not included.
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
JEITA
ISSUE DATE
95-01-25
03-02-13
SOT398-1
2004 Feb 18
EUROPEAN
PROJECTION
11
NXP Semiconductors
Product specification
2 x 6 W stereo power amplifier
TDA1517; TDA1517P
SOLDERING
The total contact time of successive solder waves must not
exceed 5 seconds.
Introduction to soldering through-hole mount
packages
The device may be mounted up to the seating plane, but
the temperature of the plastic body must not exceed the
specified maximum storage temperature (Tstg(max)). If the
printed-circuit board has been pre-heated, forced cooling
may be necessary immediately after soldering to keep the
temperature within the permissible limit.
This text gives a brief insight to wave, dip and manual
soldering. A more in-depth account of soldering ICs can be
found in our “Data Handbook IC26; Integrated Circuit
Packages” (document order number 9398 652 90011).
Wave soldering is the preferred method for mounting of
through-hole mount IC packages on a printed-circuit
board.
Manual soldering
Apply the soldering iron (24 V or less) to the lead(s) of the
package, either below the seating plane or not more than
2 mm above it. If the temperature of the soldering iron bit
is less than 300 °C it may remain in contact for up to
10 seconds. If the bit temperature is between
300 and 400 °C, contact may be up to 5 seconds.
Soldering by dipping or by solder wave
Driven by legislation and environmental forces the
worldwide use of lead-free solder pastes is increasing.
Typical dwell time of the leads in the wave ranges from
3 to 4 seconds at 250 °C or 265 °C, depending on solder
material applied, SnPb or Pb-free respectively.
Suitability of through-hole mount IC packages for dipping and wave soldering methods
SOLDERING METHOD
PACKAGE
DIPPING
WAVE
CPGA, HCPGA
−
suitable
DBS, DIP, HDIP, RDBS, SDIP, SIL
suitable
suitable(1)
PMFP(2)
−
not suitable
Notes
1. For SDIP packages, the longitudinal axis must be parallel to the transport direction of the printed-circuit board.
2. For PMFP packages hot bar soldering or manual soldering is suitable.
2004 Feb 18
12
NXP Semiconductors
Product specification
2 x 6 W stereo power amplifier
TDA1517; TDA1517P
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
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property or environmental damage. NXP Semiconductors
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However, NXP Semiconductors does not give any
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expected to result in personal injury, death or severe
2004 Feb 18
13
NXP Semiconductors
Product specification
2 x 6 W stereo power amplifier
TDA1517; TDA1517P
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) will cause permanent damage to
the device. Limiting values are stress ratings only and
(proper) operation of the device at these or any other
conditions above those given in the Recommended
operating conditions section (if present) or the
Characteristics sections of this document is not warranted.
Constant or repeated exposure to limiting values will
permanently and irreversibly affect the quality and
reliability of the device.
Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Non-automotive qualified products ⎯ Unless this data
sheet expressly states that this specific NXP
Semiconductors product is automotive qualified, the
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or application requirements. NXP Semiconductors accepts
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applications.
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2004 Feb 18
14
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This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
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Printed in The Netherlands
R30/05/pp15
Date of release: 2004 Feb 18
Document order number:
9397 750 12926