LITTELFUSE P6002ADL

High Surge Current Three-pin SIDACtor® Device
RoHS
1
(T)
2
(G)
3
This SIDACtor device is a 1000 A solid state protection device offered in a TO-220 package.
It protects equipment located in the severe surge environment of CATV (Community
Antenna TV) systems and antenna locations.
Electrical Parameters
Part
Number *
P6002ADL
VDRM
Volts
VS
Volts
VT
Volts
IDRM
µAmps
IS
mAmps
IT
Amps
IH
mAmps
550
700
5.5
5
800
2.2
50
* “L” in part number indicates RoHS compliance. For non-RoHS compliant device, delete “L” from part number.
For surge ratings, see table below.
Electrical Parameters
Part
Number *
P3100ADL
VDRM
Volts
VS
Volts
VT
Volts
IDRM
µAmps
IS
mAmps
IT
Amps
IH
mAmps
280
360
5.5
5
800
2.2
150
* “L” in part number indicates RoHS compliance. For non-RoHS compliant device, delete “L” from part number.
For surge ratings, see table below.
General Notes:
• All measurements are made at an ambient temperature of 25 °C. IPP applies to -40 °C through +85 °C temperature range.
• IPP is a repetitive surge rating and is guaranteed for the life of the product.
• Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.
• VDRM is measured at IDRM.
• VS is measured at 100 V/µs.
• Special voltage (VS and VDRM) and holding current (IH) requirements are available upon request.
Surge Ratings in Amps
IPP
8x20 *
1.2x50 **
10x1000 *
10x1000 **
ITSM
50 / 60 Hz
di/dt
Series
Amps
Amps
Amps
Amps/µs
D
1000
250
120
500
* Current waveform in µs
** Voltage waveform in µs
Note: P6002AD is shown. P3100AD has no center lead.
Telecom Design Guide • © 2006 Littelfuse
3 - 85
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SIDACtor Devices
(R)
High Surge Current Three-pin SIDACtor® Device
Thermal Considerations
Package
Symbol
Modified
TO-220
Parameter
Unit
Operating Junction Temperature Range
-40 to +150
°C
TS
Storage Temperature Range
-65 to +150
°C
60
°C/W
Thermal Resistance: Junction to Ambient
RθJA
PIN 1
Value
TJ
PIN 3
PIN 2
Capacitance Values
pF
Part Number
MIN
MAX
P6002ADL
60
200
P3100ADL
100
150
Note: Off-state capacitance (CO) is measured at 1 MHz with a 2 V bias.
IPP – Peak Pulse Current – %IPP
+I
IT
IS
IH
IDRM
-V
+V
VT
VDRM
VS
Peak
Value
100
tr = rise time to peak value
td = decay time to half value
Waveform = tr x td
50
Half Value
0
0
tr
td
t – Time (µs)
-I
14
12
10
IH
8
6
25 ˚C
4
2
IH (TC = 25 ˚C)
tr x td Pulse Waveform
Ratio of
Percent of VS Change – %
V-I Characteristics
0
-4
2.0
1.8
1.6
1.4
25 ˚C
1.2
1.0
0.8
0.6
0.4
-40 -20 0
-6
-8
-40 -20
0
20 40 60 80 100 120 140 160
Junction Temperature (TJ) – ˚C
Normalized VS Change versus Junction Temperature
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20 40 60 80 100 120 140 160
Case Temperature (TC) – ˚C
Normalized DC Holding Current versus Case Temperature
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© 2006 Littelfuse • Telecom Design Guide