High Surge Current Three-pin SIDACtor® Device RoHS 1 (T) 2 (G) 3 This SIDACtor device is a 1000 A solid state protection device offered in a TO-220 package. It protects equipment located in the severe surge environment of CATV (Community Antenna TV) systems and antenna locations. Electrical Parameters Part Number * P6002ADL VDRM Volts VS Volts VT Volts IDRM µAmps IS mAmps IT Amps IH mAmps 550 700 5.5 5 800 2.2 50 * “L” in part number indicates RoHS compliance. For non-RoHS compliant device, delete “L” from part number. For surge ratings, see table below. Electrical Parameters Part Number * P3100ADL VDRM Volts VS Volts VT Volts IDRM µAmps IS mAmps IT Amps IH mAmps 280 360 5.5 5 800 2.2 150 * “L” in part number indicates RoHS compliance. For non-RoHS compliant device, delete “L” from part number. For surge ratings, see table below. General Notes: • All measurements are made at an ambient temperature of 25 °C. IPP applies to -40 °C through +85 °C temperature range. • IPP is a repetitive surge rating and is guaranteed for the life of the product. • Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities. • VDRM is measured at IDRM. • VS is measured at 100 V/µs. • Special voltage (VS and VDRM) and holding current (IH) requirements are available upon request. Surge Ratings in Amps IPP 8x20 * 1.2x50 ** 10x1000 * 10x1000 ** ITSM 50 / 60 Hz di/dt Series Amps Amps Amps Amps/µs D 1000 250 120 500 * Current waveform in µs ** Voltage waveform in µs Note: P6002AD is shown. P3100AD has no center lead. Telecom Design Guide • © 2006 Littelfuse 3 - 85 www.littelfuse.com SIDACtor Devices (R) High Surge Current Three-pin SIDACtor® Device Thermal Considerations Package Symbol Modified TO-220 Parameter Unit Operating Junction Temperature Range -40 to +150 °C TS Storage Temperature Range -65 to +150 °C 60 °C/W Thermal Resistance: Junction to Ambient RθJA PIN 1 Value TJ PIN 3 PIN 2 Capacitance Values pF Part Number MIN MAX P6002ADL 60 200 P3100ADL 100 150 Note: Off-state capacitance (CO) is measured at 1 MHz with a 2 V bias. IPP – Peak Pulse Current – %IPP +I IT IS IH IDRM -V +V VT VDRM VS Peak Value 100 tr = rise time to peak value td = decay time to half value Waveform = tr x td 50 Half Value 0 0 tr td t – Time (µs) -I 14 12 10 IH 8 6 25 ˚C 4 2 IH (TC = 25 ˚C) tr x td Pulse Waveform Ratio of Percent of VS Change – % V-I Characteristics 0 -4 2.0 1.8 1.6 1.4 25 ˚C 1.2 1.0 0.8 0.6 0.4 -40 -20 0 -6 -8 -40 -20 0 20 40 60 80 100 120 140 160 Junction Temperature (TJ) – ˚C Normalized VS Change versus Junction Temperature www.littelfuse.com 20 40 60 80 100 120 140 160 Case Temperature (TC) – ˚C Normalized DC Holding Current versus Case Temperature 3 - 86 © 2006 Littelfuse • Telecom Design Guide