NTMFS4927N D

NTMFS4927N,
NTMFS4927NC
Power MOSFET
30 V, 38 A, Single N−Channel, SO−8 FL
Features
•
•
•
•
•
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
Optimized for 5 V, 12 V Gate Drives
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
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V(BR)DSS
RDS(ON) MAX
7.3 mW @ 10 V
30 V
• CPU Power Delivery
• DC−DC Converters
Symbol
D (5,6)
Value
Unit
Drain−to−Source Voltage
VDSS
30
V
Gate−to−Source Voltage
VGS
±20
V
ID
13.6
A
TA = 25°C
Continuous Drain
Current RqJA
(Note 1)
TA = 100°C
S (1,2,3)
Power Dissipation
RqJA (Note 1)
TA = 25°C
PD
2.70
W
Continuous Drain
Current RqJA ≤ 10 s
(Note 1)
TA = 25°C
ID
20.4
A
Power Dissipation
RqJA ≤ 10 s (Note 1)
Continuous Drain
Current RqJA
(Note 2)
TA = 25°C
Steady
State
PD
6.04
D
1
TA = 25°C
ID
7.9
A
5.0
TA = 25°C
PD
0.92
W
Continuous Drain
Current RqJC
(Note 1)
TC = 25°C
ID
38
A
TC = 25°C
PD
20.8
W
TA = 25°C, tp = 10 ms
IDM
160
A
IDmax
100
A
TJ,
TSTG
−55 to
+150
°C
IS
21
A
Drain to Source DV/DT
dV/dt
6.0
V/ns
Single Pulse Drain−to−Source Avalanche
Energy (TJ = 25°C, VDD = 24 V, VGS = 20 V,
IL = 20 Apk, L = 0.1 mH, RG = 25 W)
EAS
20
mJ
TC =100°C
Current Limited by Package
MARKING
DIAGRAM
W
Power Dissipation
RqJA (Note 2)
Pulsed Drain
Current
N−CHANNEL MOSFET
12.9
TA = 100°C
Power Dissipation
RqJC (Note 1)
G (4)
8.6
TA = 100°C
TA = 25°C
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
24
TL
38 A
12.0 mW @ 4.5 V
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
ID MAX
260
°C
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
4927N
A
Y
W
ZZ
S
S
S
G
4927N
AYWZZ
D
D
D
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Lot Traceability
ORDERING INFORMATION
Device
NTMFS4927NT1G
NTMFS4927NCT1G
NTMFS4927NT3G
NTMFS4927NCT3G
Package
Shipping†
SO−8 FL
(Pb−Free)
1500 /
Tape & Reel
SO−8 FL
(Pb−Free)
5000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
© Semiconductor Components Industries, LLC, 2012
June, 2012 − Rev. 8
1
Publication Order Number:
NTMFS4927N/D
NTMFS4927N, NTMFS4927NC
THERMAL RESISTANCE MAXIMUM RATINGS
Symbol
Value
Junction−to−Case (Drain)
Parameter
RqJC
6.0
Junction−to−Ambient – Steady State (Note 3)
RqJA
46.3
Junction−to−Ambient – Steady State (Note 4)
RqJA
136.2
Junction−to−Ambient – (t ≤ 10 s) (Note 3)
RqJA
20.7
Unit
°C/W
3. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
4. Surface−mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
30
V
Drain−to−Source Breakdown Voltage
(transient)
V(BR)DSSt
VGS = 0 V, ID(aval) = 8.4 A,
Tcase = 25°C, ttransient = 100 ns
34
V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
Parameter
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
IDSS
24
VGS = 0 V,
VDS = 24 V
mV/°C
TJ = 25°C
1.0
TJ = 125°C
10
IGSS
VDS = 0 V, VGS = ±20 V
VGS(TH)
VGS = VDS, ID = 250 mA
mA
±100
nA
2.2
V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
VGS(TH)/TJ
RDS(on)
1.6
3.7
VGS = 10 V
VGS = 4.5 V
Forward Transconductance
1.32
gFS
ID = 30 A
5.8
ID = 15 A
5.7
ID = 30 A
9.6
ID = 15 A
9.2
VDS = 1.5 V, ID = 15 A
mV/°C
7.3
12
40
mW
S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
CISS
913
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Capacitance Ratio
CRSS /
CISS
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
Total Gate Charge
VGS = 0 V, f = 1 MHz, VDS = 15 V
366
pF
108
VGS = 0 V, VDS = 15 V, f = 1 MHz
0.118
0.237
8.0
VGS = 4.5 V, VDS = 15 V; ID = 30 A
1.6
3.1
nC
3.1
QG(TOT)
VGS = 10 V, VDS = 15 V; ID = 30 A
16.0
nC
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
9.2
tr
td(OFF)
VGS = 4.5 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
tf
25.5
14.0
4.4
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
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2
ns
NTMFS4927N, NTMFS4927NC
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
6.5
tr
td(OFF)
VGS = 10 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
tf
21.0
ns
18.0
3.0
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
TJ = 25°C
0.87
TJ = 125°C
0.76
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V,
IS = 30 A
1.1
V
21.4
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 30 A
10.5
ns
10.9
QRR
8.4
nC
Source Inductance
LS
1.00
nH
Drain Inductance
LD
0.005
nH
Gate Inductance
LG
1.84
nH
Gate Resistance
RG
PACKAGE PARASITIC VALUES
TA = 25°C
0.90
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
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3
2.2
W
NTMFS4927N, NTMFS4927NC
TYPICAL CHARACTERISTICS
4.5 V
TJ = 25°C
ID, DRAIN CURRENT (A)
80
4.0 V
60
3.5 V
50
40
3.0 V
30
20
VGS = 2.5 V
0
1
2
3
4
30
20
1
2
3
4
5
0.011
0.010
0.009
0.008
0.007
0.006
4
5
6
7
8
9
10
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
Figure 2. Transfer Characteristics
0.012
0.019
T = 25°C
0.017
0.015
0.013
VGS = 4.5 V
0.011
0.009
0.007
VGS = 10 V
0.005
0.003
10
20
30
50
40
60
70
80
90 100
VGS (V)
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. VGS
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
10,000
1.7
ID = 30 A
VGS = 10 V
TJ = 150°C
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
50
40
Figure 1. On−Region Characteristics
0.013
1.5
TJ = 125°C
VDS = 10 V
60
VGS, GATE−TO−SOURCE VOLTAGE (V)
ID = 30 A
1.6
TJ = 25°C
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
0.014
3
80
70
10
0
5
0.015
0.005
0.004
TJ = −55°C
90
70
10
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
100
10 V
90
ID, DRAIN CURRENT (A)
100
1.4
1.3
1.2
1.1
1.0
0.9
TJ = 125°C
1,000
100
TJ = 85°C
0.8
0.7
0.6
−50
−25
0
25
50
75
100
125
150
10
VGS = 0 V
5
10
15
20
25
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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4
30
NTMFS4927N, NTMFS4927NC
TYPICAL CHARACTERISTICS
C, CAPACITANCE (pF)
TJ = 25°C
VGS = 0 V
Ciss
1000
VGS, GATE−TO−SOURCE VOLTAGE (V)
1200
800
600
Coss
400
Crss
200
0
0
5
10
15
20
25
30
11
QT
10
9
8
7
6
5
Qgs
4
Qgd
TJ = 25°C
3
VGS = 10 V
VDD = 15 V
ID = 30 A
2
1
0
0 1
2 3 4 5
6 7 8 9 10 11 12 13 14 15 16 17
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
1000
30
t, TIME (ns)
100
IS, SOURCE CURRENT (A)
VGS = 0 V
VGS = 10 V
VDD = 15 V
ID = 15 A
td(off)
tf
tr
td(on)
10
1
10
ID, DRAIN CURRENT (A)
10
TJ = 25°C
TJ = 125°C
5
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 10. Diode Forward Voltage vs. Current
100
10 ms
10
100 ms
1 ms
0 V < VGS < 10 V
Single Pulse
TC = 25°C
1
0.01
15
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
1000
0.1
20
0
100
10 ms
dc
RDS(on) Limit
Thermal Limit
Package Limit
0.01
0.1
1
10
EAS, SINGLE PULSE DRAIN−TO−
SOURCE AVALANCHE ENERGY (mJ)
1
25
100
20
ID = 20 A
18
16
14
12
10
8
6
4
2
0
25
50
75
100
125
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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5
150
NTMFS4927N, NTMFS4927NC
TYPICAL CHARACTERISTICS
100
D = 0.5
r(t)
(°C/W)
10
1
0.2
0.1
0.05
0.02
0.01
0.1
SINGLE PULSE
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
t, TIME (s)
Figure 13. Thermal Response
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6
1
10
100
1000
NTMFS4927N, NTMFS4927NC
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE G
2X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
0.20 C
D
2
A
B
D1
2X
0.20 C
4X
E1
2
3
q
E
2
1
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
q
c
A1
4
TOP VIEW
C
3X
e
0.10 C
SEATING
PLANE
DETAIL A
A
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
0.10 C
SIDE VIEW
SOLDERING FOOTPRINT*
DETAIL A
3X
8X
0.10
C A B
0.05
c
4X
e/2
1
4
0.965
K
G
0.750
1.000
L
PIN 5
(EXPOSED PAD)
4X
1.270
b
MILLIMETERS
MIN
NOM
MAX
0.90
1.00
1.10
0.00
−−−
0.05
0.33
0.41
0.51
0.23
0.28
0.33
5.15 BSC
4.50
4.90
5.10
3.50
−−−
4.22
6.15 BSC
5.50
5.80
6.10
3.45
−−−
4.30
1.27 BSC
0.51
0.61
0.71
1.20
1.35
1.50
0.51
0.61
0.71
0.05
0.17
0.20
3.00
3.40
3.80
0_
−−−
12 _
1.330
2X
0.905
2X
E2
L1
M
0.495
4.530
3.200
0.475
D2
2X
BOTTOM VIEW
1.530
4.560
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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NTMFS4927N/D