NTMFS4937N D

NTMFS4937N
Power MOSFET
30 V, 70 A, Single N−Channel, SO−8 FL
Features
•
•
•
•
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• CPU Power Delivery
• DC−DC Converters
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V(BR)DSS
RDS(ON) MAX
4.0 mW @ 10 V
30 V
Drain−to−Source Voltage
Gate−to−Source Voltage
TA = 25°C
Continuous Drain
Current RqJA
(Note 1)
Symbol
Value
Unit
VDSS
30
V
VGS
±20
V
ID
17.1
A
TA = 100°C
TA = 25°C
PD
2.6
W
Continuous Drain
Current RqJA ≤ 10 s
(Note 1)
TA = 25°C
ID
30
A
Continuous Drain
Current RqJA
(Note 2)
TA = 100°C
Steady
State
TA = 25°C
PD
8.1
W
TA = 25°C
ID
10.2
A
N−CHANNEL MOSFET
MARKING
DIAGRAM
6.5
PD
1
TA = 25°C
Continuous Drain
Current RqJC
(Note 1)
TC = 25°C
Power Dissipation
RqJC (Note 1)
TC = 25°C
PD
43
W
TA = 25°C, tp = 10 ms
IDM
210
A
IDmax
100
A
TJ,
TSTG
−55 to
+150
°C
IS
40
A
Drain to Source DV/DT
dV/dt
6.5
V/ns
Single Pulse Drain−to−Source Avalanche
Energy (TJ = 25°C, VDD = 50 V, VGS = 10 V,
IL = 37 Apk, L = 0.1 mH, RG = 25 W)
EAS
68.5
mJ
TL
260
°C
ID
TC = 85°C
TA = 25°C
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
0.92
W
70
A
44
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
© Semiconductor Components Industries, LLC, 2013
March, 2013 − Rev. 6
S (1,2,3)
D
TA = 100°C
Current Limited by Package
G (4)
19
Power Dissipation
RqJA (Note 2)
Pulsed Drain
Current
D (5,6)
10.9
Power Dissipation
RqJA (Note 1)
Power Dissipation
RqJA ≤ 10 s (Note 1)
70 A
6.0 mW @ 4.5 V
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
ID MAX
1
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
A
Y
W
ZZ
S
S
S
G
D
4937N
AYWZZ
D
D
= Assembly Location
= Year
= Work Week
= Lot Traceability
ORDERING INFORMATION
Device
Package
Shipping†
NTMFS4937NT1G
SO−8 FL
(Pb−Free)
1500 /
Tape & Reel
NTMFS4937NT3G
SO−8 FL
(Pb−Free)
5000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
NTMFS4937N/D
NTMFS4937N
THERMAL RESISTANCE MAXIMUM RATINGS
Symbol
Value
Junction−to−Case (Drain)
Parameter
RqJC
2.9
Junction−to−Ambient – Steady State (Note 3)
RqJA
48
Junction−to−Ambient – Steady State (Note 4)
RqJA
135
Junction−to−Ambient – (t ≤ 10 s) (Note 3)
RqJA
14.8
Unit
°C/W
3. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
4. Surface−mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
30
V
Drain−to−Source Breakdown Voltage
(transient)
V(BR)DSSt
VGS = 0 V, ID(aval) = 15.5 A,
Tcase = 25°C, ttransient = 100 ns
34
V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
Parameter
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
IDSS
15
VGS = 0 V,
VDS = 24 V
mV/°C
TJ = 25°C
1.0
TJ = 125°C
10
IGSS
VDS = 0 V, VGS = ±20 V
VGS(TH)
VGS = VDS, ID = 250 mA
mA
±100
nA
2.2
V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
VGS(TH)/TJ
RDS(on)
1.63
4.0
VGS = 10 V
VGS = 4.5 V
Forward Transconductance
1.32
gFS
ID = 30 A
3.2
ID = 15 A
3.2
ID = 30 A
4.8
ID = 15 A
4.8
VDS = 1.5 V, ID = 15 A
mV/°C
4.0
6.0
37
mW
S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
CISS
2516
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Capacitance Ratio
CRSS /
CISS
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
Total Gate Charge
VGS = 0 V, f = 1 MHz, VDS = 15 V
840
pF
25
VGS = 0 V, VDS = 15 V, f = 1 MHz
0.010
0.020
15.9
VGS = 4.5 V, VDS = 15 V; ID = 30 A
4.0
7.6
nC
2.2
QG(TOT)
VGS = 10 V, VDS = 15 V; ID = 30 A
31
nC
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
14.4
tr
td(OFF)
VGS = 4.5 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
tf
25
23.4
5.7
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
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2
ns
NTMFS4937N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
10.6
tr
td(OFF)
VGS = 10 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
tf
21.1
ns
29.3
4.0
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
TJ = 25°C
0.88
TJ = 125°C
0.78
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V,
IS = 30 A
1.1
V
39
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 30 A
19
ns
20
QRR
35
nC
Source Inductance
LS
0.93
nH
Drain Inductance
LD
0.005
nH
Gate Inductance
LG
1.84
nH
Gate Resistance
RG
PACKAGE PARASITIC VALUES
TA = 25°C
1.1
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
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3
2.0
W
NTMFS4937N
TYPICAL CHARACTERISTICS
VGS = 4.0 V
7V
3.8 V
3.6 V
100 4.5 V
3.4 V
80
3.2 V
60
3.0 V
40
2.8 V
20
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
VDS = 10 V
TJ = 25°C
2.6 V
2.4 V
0
1
2
3
80
60
TJ = 25°C
40
20
TJ = 125°C
TJ = −55°C
1.0
1.5
2.0
3.0
2.5
3.5
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.015
0.014
ID = 30 A
TJ = 25°C
0.013
0.012
0.011
4.0
0.007
TJ = 25°C
0.0065
0.006
0.0055
0.010
0.009
0.008
VGS = 4.5 V
0.005
0.0045
0.007
0.006
0.005
0.004
0.003
2.0
100
0
4
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
ID, DRAIN CURRENT (A)
120
120
4.2 V
10 V
ID, DRAIN CURRENT (A)
140
0.004
VGS = 10 V
0.0035
3.0
4.0
5.0
6.0
7.0
8.0
9.0
VGS (V)
10.0
0.003
20
Figure 3. On−Resistance vs. VGS
40 50 60 70 80 90 100 110 120 130 14
ID, DRAIN CURRENT (A)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
10,000
RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
2
1.9
1.8 ID = 30 A
1.7 VGS = 10 V
1.6
1.5
1.4
1.3
1.2
1.1
1
0.9
0.8
0.7
0.6
0.5
0.4
−50
−25
0
30
VGS = 0 V
IDSS, LEAKAGE (nA)
TJ = 150°C
1000
100
10
25
50
75
100
125
150
TJ = 125°C
TJ = 85°C
5
10
15
20
25
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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4
30
NTMFS4937N
2800
2600
2400
2200
2000
1800
1600
1400
1200
1000
800
600
400
200
0
VGS, GATE−TO−SOURCE VOLTAGE (V)
C, CAPACITANCE (pF)
TYPICAL CHARACTERISTICS
Ciss
VGS = 0 V
TJ = 25°C
Coss
Crss
0
5
10
15
20
25
6
5
Qgd
4
Qgs
3
VDD = 15 V
VGS = 10 V
ID = 30 A
2
1
0
0
2
4
6
8 10 12 14 16 18 20 22 24 26 28 30 32
30
VGS = 0 V
td(off)
IS, SOURCE CURRENT (A)
t, TIME (ns)
7
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
tf
tr
td(on)
10
1
10
25
20
TJ = 125°C
15
10
5
TJ = 25°C
0
0.4
100
0.5
0.6
0.7
0.8
0.9
1.0
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
10 ms
10
100 ms
1 ms
VGS = 20 V
Single Pulse
TC = 25°C
10 ms
RDS(on) Limit
Thermal Limit
Package Limit
0.01
0.1
dc
1
10
EAS, SINGLE PULSE DRAIN−TO−
SOURCE AVALANCHE ENERGY (mJ)
1000
ID, DRAIN CURRENT (A)
8
Figure 7. Capacitance Variation
100
0.1
TJ = 25°C
Qg, TOTAL GATE CHARGE (nC)
VDD = 15 V
ID = 15 A
VGS = 10 V
1
QT
9
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
1000
1
11
10
100
70
ID = 37 A
60
50
40
30
20
10
0
25
50
75
100
125
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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5
150
NTMFS4937N
TYPICAL CHARACTERISTICS
100
1
Duty Cycle = 50%
20%
10%
5%
2%
1%
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.1
0.01
1
10
PULSE TIME (sec)
Figure 13. Thermal Response
100
90
80
70
GFS (S)
R(t) (°C/W)
10
60
50
40
30
20
10
0
0
10
20
30
40
50
60
70
ID (A)
Figure 14. GFS vs. ID
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6
80
90
100
100
1000
NTMFS4937N
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE H
2X
0.20 C
D
2
A
B
D1
2X
0.20 C
2
2
3
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
q
4X
E1
1
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
q
E
c
A1
4
TOP VIEW
C
3X
e
0.10 C
SEATING
PLANE
DETAIL A
A
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
0.10 C
SIDE VIEW
8X
DETAIL A
SOLDERING FOOTPRINT*
b
0.10
C A B
0.05
c
3X
4X
1.270
0.750
1
4
0.965
K
1.330
PIN 5
(EXPOSED PAD)
E2
L1
M
2X
0.905
2X
0.495
4.530
3.200
G
4X
1.000
e/2
L
MILLIMETERS
MIN
NOM
MAX
0.90
1.00
1.10
0.00
−−−
0.05
0.33
0.41
0.51
0.23
0.28
0.33
5.15 BSC
4.70
4.90
5.10
3.80
4.00
4.20
6.15 BSC
5.70
5.90
6.10
3.45
3.65
3.85
1.27 BSC
0.51
0.61
0.71
1.20
1.35
1.50
0.51
0.61
0.71
0.05
0.17
0.20
3.00
3.40
3.80
0_
−−−
12 _
0.475
D2
BOTTOM VIEW
2X
1.530
4.560
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
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NTMFS4937N/D