MBRA140T3 D

MBRA140T3G,
NRVBA140T3G
Surface Mount
Schottky Power Rectifier
SMA Power Surface Mount Package
http://onsemi.com
This device employs the Schottky Barrier principle in a large area
metal−to−silicon power diode. State of the art geometry features
epitaxial construction with oxide passivation and metal overlay
contact. Ideally suited for low voltage, high frequency rectification, or
as free wheeling and polarity diodes in surface mount applications
where compact size and weight are critical to the system.
SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERES
40 VOLTS
Features
•
•
•
•
•
•
•
Small Compact Surface Mountable Package with J−Bent Leads
Rectangular Package for Automated Handling
Highly Stable Oxide Passivated Junction
Very Low Forward Voltage Drop
Guardring for Stress Protection
NRVBA Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant*
SMA
CASE 403D
MARKING DIAGRAM
B14
AYWW G
Mechanical Characteristics
• Case: Epoxy, Molded
• Weight: 70 mg (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes:
•
•
260°C Max. for 10 Seconds
Shipped in 12 mm tape, 5000 units per 13 inch reel
Polarity: Cathode Lead Indicated by Either Notch in Plastic Body
or Polarity Band
A
Y
WW
G
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Package
Shipping†
MBRA140T3G
SMA
(Pb−Free)
5,000 /
Tape & Reel
NRVBA140T3G
SMA
(Pb−Free)
5,000 /
Tape & Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013
September, 2013 − Rev. 10
1
Publication Order Number:
MBRA140T3/D
MBRA140T3G, NRVBA140T3G
MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(At Rated VR, TC = 95°C)
Symbol
Value
Unit
VRRM
VRWM
VR
40
V
IO
1.0
A
Peak Repetitive Forward Current
(At Rated VR, Square Wave, 20 kHz, TC = 100°C)
IFRM
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
IFSM
Storage Temperature
Tstg
−55 to +150
°C
Operating Junction Temperature
TJ
−55 to +125
°C
Voltage Rate of Change
(Rated VR, TJ = 25°C)
2.0
30
dv/dt
10,000
ESD Ratings:
Machine Model = C
Human Body Model = 3B
> 400
> 8000
A
A
V/ms
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Lead (Note 1)
Thermal Resistance, Junction−to−Ambient (Note 1)
Symbol
Value
Unit
RqJL
RqJA
35
86
°C/W
1. Mounted on 2″ Square PC Board with 1″ Square Total Pad Size, PC Board FR4.
ELECTRICAL CHARACTERISTICS
Symbol
Characteristic
Maximum Instantaneous Forward Voltage (Note 2)
see Figure 2 for other Values
Maximum Instantaneous Reverse Current
see Figure 4 for other Values
VF
(IF = 1.0 A)
(IF = 2.0 A)
IR
(VR = 40 V)
(VR = 20 V)
2. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2.0%.
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2
Value
Unit
TJ = 25°C
TJ = 100°C
0.55
0.71
0.505
0.74
TJ = 25°C
TJ = 100°C
0.5
0.1
10
4.0
V
mA
I F, INSTANTANEOUS FORWARD CURRENT (AMPS)
i F , INSTANTANEOUS FORWARD CURRENT (AMPS)
MBRA140T3G, NRVBA140T3G
10
TJ = 85°C
1.0
TJ = 125°C
TJ = 25°C
TJ = -40°C
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.0
TJ = 85°C
TJ = 25°C
TJ = 125°C
0.1
0
0.4
0.2
0.6
1.0
0.8
vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
Figure 2. Maximum Forward Voltage
100E-3
1.2
100E-3
10E-3
TJ = 125°C
1.0E-3
TJ = 85°C
I R , MAXIMUM REVERSE CURRENT (AMPS)
I R , REVERSE CURRENT (AMPS)
10
100E-6
10E-3
TJ = 85°C
1.0E-3
TJ = 25°C
100E-6
TJ = 25°C
10E-6
1.0E-6
0
10
20
30
40
10E-6
1.0E-6
0
10
20
30
VR, REVERSE VOLTAGE (VOLTS)
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Typical Reverse Current
Figure 4. Maximum Reverse Current
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3
40
MBRA140T3G, NRVBA140T3G
1.2
SQUARE WAVE
1.0
Ipk/Io = p
Ipk/Io = 5
0.6
Ipk/Io = 10
0.4
Ipk/Io = 20
0.2
0
0
R (T) , TRANSIENT THERMAL RESISTANCE (NORMALIZED)
FREQ = 20 kHz
1.4
0.8
PFO , AVERAGE POWER DISSIPATION (WATTS)
dc
20
40
60
80
100
120
1.0
0.9
SQUARE WAVE
0.8
dc
Ipk/Io = p
0.7
Ipk/Io = 5
0.6
Ipk/Io = 10
0.5
0.4
Ipk/Io = 20
0.3
0.2
0.1
0
140
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
TL, LEAD TEMPERATURE (°C)
IO, AVERAGE FORWARD CURRENT (AMPS)
Figure 5. Current Derating
Figure 6. Forward Power Dissipation
1.6
T, TIME (s)
1.0E+0
100E-3
10E-3
1.0E-3
100E-6
10E-6
1.0E-3
100E-6
10E-3
1.0E+0
100E-3
10E+0
T, TIME (s)
Figure 7. Thermal Response
1000
C, CAPACITANCE (pF)
IO , AVERAGE FORWARD CURRENT (AMPS)
1.6
100
TJ = 25°C
10
1.0
0
5.0
10
15
20
25
30
VR, REVERSE VOLTAGE (VOLTS)
Figure 8. Capacitance
http://onsemi.com
4
35
40
100E+0
1.0E+3
MBRA140T3G, NRVBA140T3G
PACKAGE DIMENSIONS
SMA
CASE 403D−02
ISSUE G
HE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,
1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION b SHALL BE MEASURED WITHIN DIMENSION L.
E
b
DIM
A
A1
b
c
D
E
HE
L
D
POLARITY INDICATOR
OPTIONAL AS NEEDED
(SEE STYLES)
MIN
1.97
0.05
1.27
0.15
2.29
4.06
4.83
0.76
MILLIMETERS
NOM
MAX
2.10
2.20
0.10
0.20
1.45
1.63
0.28
0.41
2.60
2.92
4.32
4.57
5.21
5.59
1.14
1.52
MIN
0.078
0.002
0.050
0.006
0.090
0.160
0.190
0.030
INCHES
NOM
0.083
0.004
0.057
0.011
0.103
0.170
0.205
0.045
MAX
0.087
0.008
0.064
0.016
0.115
0.180
0.220
0.060
STYLE 1:
PIN 1. CATHODE (POLARITY BAND)
2. ANODE
A
L
c
A1
SOLDERING FOOTPRINT*
4.0
0.157
2.0
0.0787
2.0
0.0787
SCALE 8:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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5
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For additional information, please contact your local
Sales Representative
MBRA140T3/D