MBRA120E, NRVBA120E Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package Employing the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes. Features • • • • • • Compact Package with J−Bend Leads Ideal for Automated Handling Highly Stable Oxide Passivated Junction Guardring for Over−Voltage Protection Optimized for Low Leakage Current NRVBA Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant http://onsemi.com SCHOTTKY BARRIER RECTIFIER 1 AMPERE 20 VOLTS MARKING DIAGRAM • • • • • • • • • • Case: Molded Epoxy Epoxy Meets UL94, VO at 1/8″ Weight: 70 mg (approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Polarity: Polarity Band Indicates Cathode Lead Available in 12 mm Tape, 5000 Units per 13 inch Reel Device Meets MSL1 Requirements ESD Ratings: Machine Model, C (>400 V) Human Body Model, 3B (>8000 V) Marking: B1E2 MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 20 V Average Rectified Forward Current (At Rated VR, TC = 125°C) IO 1.0 A Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 40 A Storage Temperature Tstg −55 to +150 °C Operating Junction Temperature TJ −55 to +150 °C dv/dt 10,000 V/ms Voltage Rate of Change (Rated VR, TJ = 25°C) B1E2 AYWWG SMA CASE 403D Mechanical Characteristics: A Y WW G = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Device Package Shipping† MBRA120ET3G SMA (Pb−Free) 5000 / Tape & Reel NRVBA120ET3G SMA (Pb−Free) 5000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. © Semiconductor Components Industries, LLC, 2014 February, 2014 − Rev. 4 1 Publication Order Number: MBRA120ET3/D MBRA120E, NRVBA120E THERMAL CHARACTERISTICS Characteristic Thermal Resistance − Junction−to−Lead Thermal Resistance − Junction−to−Ambient Symbol 5 mm x 5 mm (Note 2) 1 Inch x 1/2 inch (Note 3) RθJL RθJA 34 138 20 77 °C/W VF TJ = 25°C TJ = 100°C V 0.455 0.530 0.595 0.360 0.455 0.540 TJ = 25°C TJ = 100°C 10 1.0 0.5 1600 500 300 Unit ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (Note 1), See Figure 2 (IF = 0.1 A) (IF = 1.0 A) (IF = 2.0 A) Maximum Instantaneous Reverse Current, See Figure 4 IR (VR = 20 V) (VR = 10 V) (VR = 5.0 V) mA 10 150°C IF, INSTANTANEOUS FORWARD CURRENT (A) IF, INSTANTANEOUS FORWARD CURRENT (A) Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width ≤ 250 μs, Duty Cycle ≤ 2%. 2. Mounted on a Pad Size of 5 mm x 5 mm, PC Board FR4 (2 pads). 3. Mounted on a Pad Size of 1 inch x 1/2 inch, PC Board FR4 (2 pads). 125°C 100°C 25°C −40°C 1 0.1 0.1 0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 VF, INSTANTANEOUS VOLTAGE (VOLTS) 10 150°C 100°C 25°C 1 0.1 0 0.1 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 VF, INSTANTANEOUS VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage 1E−02 1E−02 IR, REVERSE CURRENT (A) IR, REVERSE CURRENT (A) 150°C 1E−03 125°C 1E−04 100°C 75°C 1E−05 1E−06 25°C 1E−07 1E−08 0.2 0 2 4 6 8 10 12 14 16 18 20 150°C 1E−03 100°C 1E−04 1E−05 1E−06 25°C 1E−07 1E−08 0 VR, REVERSE VOLTAGE (VOLTS) 2 4 6 8 10 12 14 16 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Maximum Reverse Current Figure 3. Typical Reverse Current http://onsemi.com 2 18 20 PFO, AVERAGE POWER DISSIPATION (WATTS) IF, AVERAGE FORWARD CURRENT (AMPS) MBRA120E, NRVBA120E 1.8 dc 1.6 1.4 1.2 SQUARE WAVE 1 0.8 0.6 0.4 0.2 0 0 20 40 80 60 100 120 140 160 TL, LEAD TEMPERATURE (°C) 0.7 0.6 dc 0.5 SQUARE WAVE 0.4 0.3 0.2 0.1 0 0 0.2 0.1 0.6 0.8 1 1.2 1.4 1.6 Figure 6. Forward Power Dissipation D = 0.5 0.3 0.2 0.1 0.05 0.02 0.01 SINGLE PULSE 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 T, TIME (sec) Figure 7. Thermal Resistance 1000 C, CAPACITANCE (pF) R (T) , TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 5. Current Derating 1 0.4 IO, AVERAGE FORWARD CURRENT (AMPS) TJ = 25°C 100 10 0 2 4 6 8 10 12 14 16 18 VR, REVERSE VOLTAGE (VOLTS) Figure 8. Typical Junction Capacitance http://onsemi.com 3 20 100 1000 MBRA120E, NRVBA120E PACKAGE DIMENSIONS SMA CASE 403D−02 ISSUE G HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION b SHALL BE MEASURED WITHIN DIMENSION L. E b DIM A A1 b c D E HE L D POLARITY INDICATOR OPTIONAL AS NEEDED (SEE STYLES) MIN 1.97 0.05 1.27 0.15 2.29 4.06 4.83 0.76 MILLIMETERS NOM MAX 2.10 2.20 0.10 0.20 1.45 1.63 0.28 0.41 2.60 2.92 4.32 4.57 5.21 5.59 1.14 1.52 MIN 0.078 0.002 0.050 0.006 0.090 0.160 0.190 0.030 INCHES NOM 0.083 0.004 0.057 0.011 0.103 0.170 0.205 0.045 MAX 0.087 0.008 0.064 0.016 0.115 0.180 0.220 0.060 A L A1 c SOLDERING FOOTPRINT* 4.000 0.157 2.000 0.079 2.000 0.079 SCALE 8:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. 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