MBRA1H100 D

MBRA1H100T3G,
NRVBA1H100T3G
Surface Mount
Schottky Power Rectifier
SMA Power Surface Mount Package
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Employing the Schottky Barrier principle in a large area
metal−to−silicon power diode. State of the art geometry features
epitaxial construction with oxide passivation and metal overlay
contact. Ideally suited for low voltage, high frequency rectification, or
as free wheeling and polarity diodes in surface mount applications
where compact size and weight are critical to the system.
SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERES, 100 VOLTS
Features








Small Compact Surface Mountable Package with J−Bent Leads
Rectangular Package for Automated Handling
Highly Stable Oxide Passivated Junction
Low Forward Voltage Drop
Guardring for Stress Protection
AEC−Q101 Qualified and PPAP Capable
NRVBA Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
This is a Pb−Free Device*
SMA
CASE 403D
PLASTIC
1
Cathode
MARKING DIAGRAMS
A110
AYWWG
Mechanical Characteristics:
 Case: Epoxy, Molded
 Weight: 70 mg (approximately)
 Finish: All External Surfaces Corrosion Resistant and Terminal




Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260C Max. for 10 Seconds
Polarity: Cathode Lead Indicated by Polarity Band
ESD Ratings:
 Machine Model = C
 Human Body Model = 3B
Device Meets MSL 1 Requirements
2
Anode
A110
A
Y
WW
G
= Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Package
Shipping†
MBRA1H100T3G
SMA
(Pb−Free)
5,000 /
Tape & Reel **
NRVBA1H100T3G
SMA
(Pb−Free)
5,000 /
Tape & Reel **
Device
** 12 mm Tape, 13” Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
 Semiconductor Components Industries, LLC, 2012
January, 2012 − Rev. 2
1
Publication Order Number:
MBRA1H100/D
MBRA1H100T3G, NRVBA1H100T3G
MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(TL = 167C)
Symbol
Value
Unit
VRRM
VRWM
VR
100
V
IO
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
Storage and Operating Junction Temperature Range (Note 1)
IFSM
Tstg, TJ
1.0
50
−65 to +175
A
A
C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction−to−Lead (Note 2)
YJCL
14
C/W
Thermal Resistance, Junction−to−Ambient (Note 2)
RqJA
75
C/W
Thermal Resistance, Junction−to−Ambient (Note 3)
RqJA
280
C/W
Symbol
Value
Unit
mm2
in2)
2. Mounted with 700
copper pad size (Approximately 1
1 oz FR4 Board.
3. Mounted with pad size approximately 6 mm2 copper, 1 oz FR4 Board.
ELECTRICAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage (Note 4)
(IF = 1.0 A, TJ = 25C)
(IF = 2.0 A, TJ = 25C)
(IF = 1.0 A, TJ = 125C)
(IF = 2.0 A, TJ = 125C)
VF
Maximum Instantaneous Reverse Current (Note 4)
(Rated dc Voltage, TJ = 25C)
(Rated dc Voltage, TJ = 125C)
IR
4. Pulse Test: Pulse Width  380 ms, Duty Cycle  2.0%.
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2
0.76
0.84
0.61
0.68
40
0.5
V
mA
mA
MBRA1H100T3G, NRVBA1H100T3G
TYPICAL CHARACTERISTICS
100
IF, FORWARD CURRENT (A)
IF, FORWARD CURRENT (A)
100
150C 125C 25C
10
1
0.1
0
0.2
0.4
0.6
1.0
0.8
1.2
0
0.4
0.2
0.6
0.8
1.0
1.2
1.4
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Forward Voltage
Figure 2. Maximum Forward Voltage
1.6
IR, REVERSE CURRENT (mA)
10
150C
1
0.1
125C
0.01
0.001
0.0001
25C
0
10
20
30
40
50
60
125C
0.01
25C
0.001
70
80
90
100
0.00001
0
10
20
30
40
50
60
70
90 100
80
VR, REVERSE VOLTAGE (V)
VR, REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Current
Figure 4. Maximum Reverse Current
RqJL = 14C/W
dc
1.5
Square Wave
1.0
0.5
140
0.1
0.0001
2.0
0
135
150C
1
145
150
155
160
165
170
175
PFO, AVERAGE POWER DISSIPATION (W)
IR, REVERSE CURRENT (mA)
IF(AV), AVERAGE FORWARD CURRENT (A)
1
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
10
0.00001
10
0.1
1.4
25C
150C 125C
1.0
TJ = 175C
Square Wave
0.8
dc
0.6
0.4
0.2
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
TL, LEAD TEMPERATURE (C)
IO, AVERAGE FORWARD CURRENT (A)
Figure 5. Current Derating
Figure 6. Forward Power Dissipation
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3
1.6
MBRA1H100T3G, NRVBA1H100T3G
TYPICAL CHARACTERISTICS
140
TJ = 25C
C, CAPACITANCE (pF)
120
100
80
60
40
20
0
0
10
20
30
40
50
60
70
80
90
100
VR, REVERSE VOLTAGE (V)
Figure 7. Capacitance
1000
50% (DUTY CYCLE)
R(t) (C/W)
100
10
1.0
20%
10%
5.0%
2.0%
1.0%
0.1
SINGLE PULSE
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1.0
10
100
1000
10
100
1000
PULSE TIME (s)
Figure 8. Thermal Response, Junction−to−Ambient (6 mm2 pad)
100
R(t) (C/W)
10
50% (DUTY CYCLE)
20%
10%
5.0%
2.0%
1.0
1.0%
0.1
SINGLE PULSE
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1.0
PULSE TIME (s)
Figure 9. Thermal Response, Junction−to−Ambient (1 in2 pad)
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4
MBRA1H100T3G, NRVBA1H100T3G
PACKAGE DIMENSIONS
SMA
CASE 403D−02
ISSUE F
HE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 403D−01 OBSOLETE, NEW STANDARD IS 403D−02.
E
b
DIM
A
A1
b
c
D
E
HE
L
D
POLARITY INDICATOR
OPTIONAL AS NEEDED
(SEE STYLES)
MIN
1.97
0.05
1.27
0.15
2.29
4.06
4.83
0.76
MILLIMETERS
NOM
MAX
2.10
2.20
0.10
0.15
1.45
1.63
0.28
0.41
2.60
2.92
4.32
4.57
5.21
5.59
1.14
1.52
MIN
0.078
0.002
0.050
0.006
0.090
0.160
0.190
0.030
INCHES
NOM
0.083
0.004
0.057
0.011
0.103
0.170
0.205
0.045
MAX
0.087
0.006
0.064
0.016
0.115
0.180
0.220
0.060
STYLE 1:
PIN 1. CATHODE (POLARITY BAND)
2. ANODE
A
L
c
A1
SOLDERING FOOTPRINT*
4.0
0.157
2.0
0.0787
2.0
0.0787
SCALE 8:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
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5
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For additional information, please contact your local
Sales Representative
MBRA1H100/D