MBR2045CT D

MBR2045CT, MBRF2045CT
SWITCHMODE
Power Rectifier
Features and Benefits
•
•
•
•
•
•
Low Forward Voltage
Low Power Loss / High Efficiency
High Surge Capacity
175°C Operating Junction Temperature
20 A Total (10 A Per Diode Leg)
Pb−Free Package is Available*
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SCHOTTKY BARRIER
RECTIFIER
20 AMPERES, 45 VOLTS
Applications
• Power Supply − Output Rectification
• Power Management
• Instrumentation
1
2, 4
3
Mechanical Characteristics
•
•
•
•
•
•
Case: Epoxy, Molded
Epoxy Meets UL 94, V−0 @ 0.125 in
Weight: 1.9 Grams (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
ESD Rating:
Human Body Model = 3B
Machine Model = C
4
1
2
1
3
TO−220AB
CASE 221A
STYLE 6
2
3
TO−220
FULLPAK]
CASE 221D
STYLE 3
DEVICE MARKING INFORMATION
See general marking information in the device marking
section on page 2 of this data sheet.
ORDERING INFORMATION
See detailed ordering and shipping information on page 3 of
this data sheet.
© Semiconductor Components Industries, LLC, 2014
October, 2014 − Rev. 11
1
Publication Order Number:
MBR2045CT/D
MBR2045CT, MBRF2045CT
AYWW
MBR2045CTG
AKA
AYWW
B2045G
AKA
TO−220AB
TO−220 FULLPAK
A
Y
WW
G
AKA
= Assembly Location
= Year
= Work Week
= Pb−Free Package
= Diode Polarity
Figure 1. Marking Diagrams
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
45
V
Average Rectified Forward Current
Per Device
Per Diode (TC = 165°C)
IF(AV)
Peak Repetitive Forward Current
per Diode Leg (Square Wave, 20 kHz, TC = 163°C)
IFRM
20
A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
IFSM
150
A
Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz)
See Figure 13
IRRM
1.0
A
Storage Temperature Range
Tstg
−65 to +175
°C
Operating Junction Temperature (Note 1)
TJ
−65 to +175
°C
dv/dt
10,000
V/ms
Voltage Rate of Change (Rated VR)
20
10
A
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Characteristic
Maximum Thermal Resistance
(MBR2045CT)
(MBRF2045CT)
− Junction−to−Case
− Junction−to−Ambient
− Junction−to−Case
− Junction−to−Ambient
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2
Symbol
Value
RqJC
RqJA
RqJC
RqJA
2.0
60
4.75
75
Unit
°C/W
MBR2045CT, MBRF2045CT
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Instantaneous Forward Voltage (Note 2)
(iF = 10 A, TJ = 125°C)
(iF = 20 A, TJ = 125°C)
(iF = 20 A, TJ = 25°C)
vF
Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, TJ = 125°C)
(Rated dc Voltage, TJ = 25°C)
iR
Min
Typ
Max
−
−
−
0.50
0.67
0.71
0.57
0.72
0.84
−
−
10.4
0.02
15
0.1
Unit
V
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
ORDERING INFORMATION
Package Type
Shipping†
MBR2045CTG
TO−220
(Pb−Free)
50 Units / Rail
MBRF2045CTG
TO−220FP
(Pb−Free)
50 Units / Rail
Device Order Number
100
100
70
70
50
50
30
30
10
7.0
5.0
125°C
25°C
3.0
2.0
1.0
25°C
10
7.0
5.0
3.0
2.0
1.0
0.7
0.7
0.5
0.5
0.3
0.3
0.2
0.2
0.1
0.0
125°C
20
TJ = 150°C
iF, INSTANTANEOUS FORWARD CURRENT (AMPS)
iF, INSTANTANEOUS FORWARD CURRENT (AMPS)
20
TJ = 150°C
0.1
0.1
0.2 0.3
0.4 0.5 0.6 0.7
0.8 0.9
1.0 1.1
1.2
0.2
0.4
0.6
0.8
1.0
1.2
vF, INSTANTANEOUS VOLTAGE (VOLTS)
vF, INSTANTANEOUS VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
Figure 2. Maximum Forward Voltage
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3
1.4
MBR2045CT, MBRF2045CT
100
100
TJ = 150°C
10
125°C
1.0
100°C
0.1
0.01
25°C
0.001
0.0001
125°C
10
IR , REVERSE CURRENT (mA)
IR , REVERSE CURRENT (mA)
TJ = 150°C
100°C
1.0
75°C
0.1
25°C
0.01
0.001
0
10
5.0
15
20
25
30
35
40
45
50
0
10
5.0
15
VR, REVERSE VOLTAGE (VOLTS)
IF(AV) , AVERAGE FORWARD CURRENT (AMPS)
IFSM , PEAK HALF-WAVE CURRENT (AMPS)
100
70
50
30
20
5.0 7.0 10
3.0
20
30
50
70 100
PF(AV) , AVERAGE FORWARD POWER DISSIPATION (WATTS)
I F(AV) , AVERAGE FORWARD CURRENT (AMPS)
SQUARE WAVE
12
10
8.0
dc
6.0
4.0
2.0
0
0
25
50
75
100
125
50
14
12
10
SQUARE
WAVE
8.0
6.0
4.0
2.0
0
140
145
150
155
160
165
170
175
180
Figure 6. Current Derating, Case, Per Leg
RqJA = 16°C/W
(With TO-220 Heat Sink)
RqJA = 60°C/W
(No Heat Sink)
14
45
TC, CASE TEMPERATURE (°C)
20
16
40
dc
Figure 5. Maximum Surge Capability
dc
35
18
16
NUMBER OF CYCLES AT 60 Hz
18
30
Figure 4. Maximum Reverse Current
200
2.0
25
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Typical Reverse Current
1.0
20
150
175
TA, AMBIENT TEMPERATURE (°C)
28
26
24
22
20
18
16
14
12
10
8
6
4
2
0
TJ = 175°C
SQUARE
WAVE
0
Figure 7. Current Derating, Ambient, Per Leg
2
4
6
8 10 12 14 16 18 20 22 24 26 28 30
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
Figure 8. Forward Power Dissipation
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4
dc
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
MBR2045CT, MBRF2045CT
1.0
0.7
0.5
0.3
0.2
Ppk
Ppk
tp
0.1
0.07
0.05
TIME
t1
DUTY CYCLE, D = tp/t1
PEAK POWER, Ppk, is peak of an
equivalent square power pulse.
DTJL = Ppk • RqJL [D + (1 - D) • r(t1 + tp) + r(tp) - r(t1)] where:
DTJL = the increase in junction temperature above the lead temperature.
r(t) = normalized value of transient thermal resistance at time, t, i.e.:
r(t1 + tp) = normalized value of transient thermal resistance at time,
t1 + tp, etc.
0.03
0.02
0.01
0.01
0.1
1.0
10
t, TIME (ms)
100
1000
R(t), TRANSIENT THERMAL RESISTANCE
Figure 9. Thermal Response for MBR2045CT
100
10
D = 0.5
0.2
0.1
0.05
0.02
1.0
0.01
0.1
P(pk)
0.01
t1
SINGLE PULSE
t2
DUTY CYCLE, D = t1/t2
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1.0
10
100
1000
t1, TIME (sec)
R(t), TRANSIENT THERMAL RESISTANCE
Figure 10. Thermal Response Junction−to−Ambient for MBRF2045CT
10
D = 0.5
1.0
0.1
0.2
0.1
0.05
0.02
0.01
0.01
P(pk)
t1
SINGLE PULSE
t2
DUTY CYCLE, D = t1/t2
0.001
0.000001
0.00001
0.0001
0.001
0.1
0.01
1.0
10
t1, TIME (sec)
Figure 11. Thermal Response Junction−to−Case for MBRF2045CT
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5
100
1000
MBR2045CT, MBRF2045CT
HIGH FREQUENCY OPERATION
1000
Since current flow in a Schottky rectifier is the result of
majority carrier conduction, it is not subject to junction diode forward and reverse recovery transients due to minority
carrier injection and stored charge. Satisfactory circuit analysis work may be performed by using a model consisting
of an ideal diode in parallel with a variable capacitance.
(See Figure 12.)
Rectification efficiency measurements show that operation will be satisfactory up to several megahertz. For example, relative waveform rectification efficiency is approximately 70 percent at 2.0 MHz, e.g., the ratio of dc
power to RMS power in the load is 0.28 at this frequency,
whereas perfect rectification would yield 0.406 for sine
wave inputs. However, in contrast to ordinary junction diodes, the loss in waveform efficiency is not indicative of
power loss; it is simply a result of reverse current flow
through the diode capacitance, which lowers the dc output
voltage.
900
C, CAPACITANCE (pF)
800
700
600
500
400
300
200
100
0
0
10
20
30
40
VR, REVERSE VOLTAGE (VOLTS)
Figure 12. Typical Capacitance
+150 V, 10 mAdc
2.0 kW
VCC
12 V
TJ = 25°C
f = 1 MHz
12 Vdc
D.U.T.
100
+
2N2222
2.0 ms
1.0 kHz
CURRENT
AMPLITUDE
ADJUST
0-10 AMPS
2N6277
100
CARBON
1.0 CARBON
1N5817
Figure 13. Test Circuit for dv/dt and Reverse Surge Current
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6
4.0 mF
50
MBR2045CT, MBRF2045CT
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AH
−T−
B
F
SEATING
PLANE
C
T
S
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
U
1 2 3
H
K
Z
L
R
V
J
G
D
N
INCHES
MIN
MAX
0.570
0.620
0.380
0.415
0.160
0.190
0.025
0.038
0.142
0.161
0.095
0.105
0.110
0.161
0.014
0.024
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080
STYLE 6:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.53
4.07
4.83
0.64
0.96
3.61
4.09
2.42
2.66
2.80
4.10
0.36
0.61
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04
ANODE
CATHODE
ANODE
CATHODE
TO−220 FULLPAK
CASE 221D−03
ISSUE K
−T−
−B−
F
SEATING
PLANE
C
S
Q
U
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
U
A
1 2 3
H
−Y−
K
G
N
L
D
J
R
3 PL
0.25 (0.010)
M
B
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH
3. 221D-01 THRU 221D-02 OBSOLETE, NEW
STANDARD 221D-03.
Y
INCHES
MIN
MAX
0.617
0.635
0.392
0.419
0.177
0.193
0.024
0.039
0.116
0.129
0.100 BSC
0.118
0.135
0.018
0.025
0.503
0.541
0.048
0.058
0.200 BSC
0.122
0.138
0.099
0.117
0.092
0.113
0.239
0.271
STYLE 3:
PIN 1. ANODE
2. CATHODE
3. ANODE
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7
MILLIMETERS
MIN
MAX
15.67
16.12
9.96
10.63
4.50
4.90
0.60
1.00
2.95
3.28
2.54 BSC
3.00
3.43
0.45
0.63
12.78
13.73
1.23
1.47
5.08 BSC
3.10
3.50
2.51
2.96
2.34
2.87
6.06
6.88
MBR2045CT, MBRF2045CT
FULLPAK is a trademark of Semiconductor Components Industries, LLC.
ON Semiconductor and the
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed
at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended,
or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which
the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or
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expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
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PUBLICATION ORDERING INFORMATION
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Phone: 81−3−5817−1050
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8
ON Semiconductor Website: www.onsemi.com
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For additional information, please contact your local
Sales Representative
MBR2045CT/D