ONSEMI MBR2045CT

MBR2045CT
SWITCHMODEt
Power Rectifier
Features and Benefits
•
•
•
•
•
•
Low Forward Voltage
Low Power Loss / High Efficiency
High Surge Capacity
175°C Operating Junction Temperature
20 A Total (10 A Per Diode Leg)
Pb−Free Package is Available*
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SCHOTTKY BARRIER
RECTIFIER
20 AMPERES, 45 VOLTS
Applications
• Power Supply − Output Rectification
• Power Management
• Instrumentation
1
2, 4
3
Mechanical Characteristics
•
•
•
•
•
•
MARKING
DIAGRAM
Case: Epoxy, Molded
Epoxy Meets UL 94, V−0 @ 0.125 in
Weight: 1.9 Grams (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
ESD Rating:
Human Body Model = 3B
Machine Model = C
4
TO−220AB
CASE 221A
STYLE 6
1
2
AYWW
MBR2045CTG
AKA
3
A
= Assembly Location
Y
= Year
WW
= Work Week
MBR2045CT = Device Code
G
= Pb−Free Package
AKA
= Diode Polarity
ORDERING INFORMATION
Device
MBR2045CT
MBR2045CTG
Package
Shipping
TO−220
50 Units / Rail
TO−220
(Pb−Free)
50 Units / Rail
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2007
April, 2007 − Rev. 6
1
Publication Order Number:
MBR2045CT/D
MBR2045CT
MAXIMUM RATINGS
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Rating
VRRM
VRWM
VR
45
V
Average Rectified Forward Current
Per Device
Per Diode (TC = 165°C)
IF(AV)
Peak Repetitive Forward Current
per Diode Leg (Square Wave, 20 kHz, TC = 163°C)
IFRM
20
A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
IFSM
150
A
Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz)
See Figure 11
IRRM
1.0
A
Storage Temperature Range
Tstg
−65 to +175
°C
Operating Junction Temperature (Note 1)
TJ
−65 to +175
°C
dv/dt
10,000
V/ms
Voltage Rate of Change (Rated VR)
A
20
10
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Maximum Thermal Resistance, Junction−to−Case (Min. Pad)
Characteristic
RqJC
2.0
°C/W
Maximum Thermal Resistance, Junction−to−Ambient (Min. Pad)
RqJA
60
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Instantaneous Forward Voltage (Note 2)
(iF = 10 Amps, TJ = 125°C)
(iF = 20 Amps, TJ = 125°C)
(iF = 20 Amps, TJ = 25°C)
vF
Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, TJ = 125°C)
(Rated dc Voltage, TJ = 25°C)
iR
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
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2
Min
Typ
Max
−
−
−
0.50
0.67
0.71
0.57
0.72
0.84
−
−
10.4
0.02
15
0.1
Unit
V
mA
MBR2045CT
100
100
70
70
50
50
30
30
10
7.0
5.0
125°C
3.0
25°C
2.0
1.0
25°C
10
7.0
5.0
3.0
2.0
1.0
0.7
0.7
0.5
0.5
0.3
0.3
0.2
0.2
0.1
0.0
125°C
20
TJ = 150°C
iF, INSTANTANEOUS FORWARD CURRENT (AMPS)
iF, INSTANTANEOUS FORWARD CURRENT (AMPS)
20
TJ = 150°C
0.1
0.1
0.2 0.3
0.4 0.5 0.6 0.7
0.8 0.9
1.0 1.1
1.2
0.2
0.4
0.6
0.8
1.0
1.2
vF, INSTANTANEOUS VOLTAGE (VOLTS)
vF, INSTANTANEOUS VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
Figure 2. Maximum Forward Voltage
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3
1.4
MBR2045CT
100
100
TJ = 150°C
10
IR , REVERSE CURRENT (mA)
IR , REVERSE CURRENT (mA)
TJ = 150°C
125°C
1.0
100°C
0.1
0.01
25°C
0.001
0.0001
125°C
10
100°C
1.0
75°C
0.1
25°C
0.01
0.001
0
10
5.0
15
20
25
30
35
40
45
50
0
10
5.0
15
VR, REVERSE VOLTAGE (VOLTS)
IF(AV) , AVERAGE FORWARD CURRENT (AMPS)
IFSM , PEAK HALF−WAVE CURRENT (AMPS)
100
70
50
30
20
3.0
5.0 7.0 10
20
30
70 100
50
PF(AV) , AVERAGE FORWARD POWER DISSIPATION (WATTS)
I F(AV) , AVERAGE FORWARD CURRENT (AMPS)
SQUARE WAVE
12
10
8.0
dc
6.0
4.0
2.0
0
0
25
50
75
100
125
50
14
12
10
SQUARE
WAVE
8.0
6.0
4.0
2.0
0
140
145
150
155
160
165
170
175
180
Figure 6. Current Derating, Case
RqJA = 16°C/W
(With TO−220 Heat Sink)
RqJA = 60°C/W
(No Heat Sink)
14
45
TC, CASE TEMPERATURE (°C)
20
16
40
dc
Figure 5. Maximum Surge Capability
dc
35
18
16
NUMBER OF CYCLES AT 60 Hz
18
30
Figure 4. Maximum Reverse Current
200
2.0
25
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Typical Reverse Current
1.0
20
150
175
TA, AMBIENT TEMPERATURE (°C)
28
26
24
22
20
18
16
14
12
10
8
6
4
2
0
TJ = 175°C
SQUARE
WAVE
0
Figure 7. Current Derating, Ambient, Per Leg
2
4
6
8 10 12 14 16 18 20 22 24 26 28 30
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
Figure 8. Forward Power Dissipation
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4
dc
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
MBR2045CT
1.0
0.7
0.5
0.3
0.2
Ppk
tp
0.1
0.07
0.05
Ppk
TIME
t1
DUTY CYCLE, D = tp/t1
PEAK POWER, Ppk, is peak of an
equivalent square power pulse.
DTJL = Ppk • RqJL [D + (1 − D) • r(t1 + tp) + r(tp) − r(t1)] where:
DTJL = the increase in junction temperature above the lead temperature.
r(t) = normalized value of transient thermal resistance at time, t, i.e.:
r(t1 + tp) = normalized value of transient thermal resistance at time,
t1 + tp, etc.
0.03
0.02
0.01
0.01
0.1
1.0
10
t, TIME (ms)
100
1000
Figure 9. Thermal Response
HIGH FREQUENCY OPERATION
1000
Since current flow in a Schottky rectifier is the result of
majority carrier conduction, it is not subject to junction
diode forward and reverse recovery transients due to minority carrier injection and stored charge. Satisfactory circuit
analysis work may be performed by using a model consisting of an ideal diode in parallel with a variable capacitance.
(See Figure 10.)
Rectification efficiency measurements show that operation will be satisfactory up to several megahertz. For example, relative waveform rectification efficiency is approximately 70 percent at 2.0 MHz, e.g., the ratio of dc power to
RMS power in the load is 0.28 at this frequency, whereas
perfect rectification would yield 0.406 for sine wave inputs.
However, in contrast to ordinary junction diodes, the loss in
waveform efficiency is not indicative of power loss; it is
simply a result of reverse current flow through the diode capacitance, which lowers the dc output voltage.
900
C, CAPACITANCE (pF)
800
700
600
500
400
300
200
100
0
0
10
20
30
40
VR, REVERSE VOLTAGE (VOLTS)
Figure 10. Typical Capacitance
+150 V, 10 mAdc
2.0 kW
VCC
12 V
TJ = 25°C
f = 1 MHz
12 Vdc
D.U.T.
100
+
2N2222
2.0 ms
1.0 kHz
CURRENT
AMPLITUDE
ADJUST
0−10 AMPS
2N6277
100
CARBON
1.0 CARBON
1N5817
Figure 11. Test Circuit for dv/dt and Reverse Surge Current
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5
4.0 mF
50
MBR2045CT
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AE
−T−
B
F
T
SEATING
PLANE
C
S
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
1 2 3
U
H
K
Z
L
R
V
J
G
D
N
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.161
0.095
0.105
0.110
0.155
0.014
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
−−−
−−−
0.080
STYLE 6:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
4.09
2.42
2.66
2.80
3.93
0.36
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
−−−
−−−
2.04
ANODE
CATHODE
ANODE
CATHODE
SWITCHMODE is a trademark of Semiconductor Components Industries, LLC.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
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Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
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USA/Canada
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Phone: 421 33 790 2910
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Phone: 81−3−5773−3850
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6
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
MBR2045CT/D