MBR2045CT, MBRF2045CT SWITCHMODE] Power Rectifier Features and Benefits • • • • • • Low Forward Voltage Low Power Loss / High Efficiency High Surge Capacity 175°C Operating Junction Temperature 20 A Total (10 A Per Diode Leg) Pb−Free Package is Available* http://onsemi.com SCHOTTKY BARRIER RECTIFIER 20 AMPERES, 45 VOLTS Applications • Power Supply − Output Rectification • Power Management • Instrumentation 1 2, 4 3 Mechanical Characteristics • • • • • • MARKING DIAGRAMS Case: Epoxy, Molded Epoxy Meets UL 94, V−0 @ 0.125 in Weight: 1.9 Grams (Approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds ESD Rating: Human Body Model = 3B Machine Model = C 4 TO−220AB CASE 221A STYLE 6 1 2 AYWW MBR2045CTG AKA 3 AYWW B2045G AKA 1 TO−220 FULLPAK CASE 221D STYLE 3 2 3 A Y WW G AKA *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2008 May, 2008 − Rev. 8 1 = Assembly Location = Year = Work Week = Pb−Free Package = Diode Polarity ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Publication Order Number: MBR2045CT/D MBR2045CT, MBRF2045CT MAXIMUM RATINGS Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Rating VRRM VRWM VR 45 V Average Rectified Forward Current Per Device Per Diode (TC = 165°C) IF(AV) Peak Repetitive Forward Current per Diode Leg (Square Wave, 20 kHz, TC = 163°C) IFRM 20 A Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 150 A Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz) See Figure 13 IRRM 1.0 A Storage Temperature Range Tstg −65 to +175 °C Operating Junction Temperature (Note 1) TJ −65 to +175 °C dv/dt 10,000 V/ms Voltage Rate of Change (Rated VR) A 20 10 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. THERMAL CHARACTERISTICS Characteristic Maximum Thermal Resistance (MBR2045CT) (MBRF2045CT) Symbol − Junction−to−Case − Junction−to−Ambient − Junction−to−Case − Junction−to−Ambient Value Unit °C/W 2.0 60 4.75 75 RqJC RqJA RqJC RqJA ELECTRICAL CHARACTERISTICS Characteristic Symbol Instantaneous Forward Voltage (Note 2) (iF = 10 Amps, TJ = 125°C) (iF = 20 Amps, TJ = 125°C) (iF = 20 Amps, TJ = 25°C) vF Instantaneous Reverse Current (Note 2) (Rated dc Voltage, TJ = 125°C) (Rated dc Voltage, TJ = 25°C) iR Min Typ Max − − − 0.50 0.67 0.71 0.57 0.72 0.84 − − 10.4 0.02 15 0.1 V mA 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. DEVICE ORDERING INFORMATION Package Type Shipping† TO−220 50 Units / Rail MBR2045CTG TO−220 (Pb−Free) 50 Units / Rail MBRF2045CTG TO−220FP (Pb−Free) 50 Units / Rail Device Order Number MBR2045CT http://onsemi.com 2 Unit MBR2045CT, MBRF2045CT 100 100 70 70 50 50 30 30 10 7.0 5.0 125°C 25°C 3.0 2.0 1.0 25°C 10 7.0 5.0 3.0 2.0 1.0 0.7 0.7 0.5 0.5 0.3 0.3 0.2 0.2 0.1 0.0 125°C 20 TJ = 150°C iF, INSTANTANEOUS FORWARD CURRENT (AMPS) iF, INSTANTANEOUS FORWARD CURRENT (AMPS) 20 TJ = 150°C 0.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0.2 vF, INSTANTANEOUS VOLTAGE (VOLTS) 0.4 0.6 0.8 1.0 1.2 vF, INSTANTANEOUS VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage http://onsemi.com 3 1.4 MBR2045CT, MBRF2045CT 100 100 TJ = 150°C 10 125°C 1.0 100°C 0.1 0.01 25°C 0.001 0.0001 125°C 10 IR , REVERSE CURRENT (mA) IR , REVERSE CURRENT (mA) TJ = 150°C 100°C 1.0 75°C 0.1 25°C 0.01 0.001 0 5.0 15 10 20 25 30 35 40 45 50 0 5.0 15 10 VR, REVERSE VOLTAGE (VOLTS) IF(AV) , AVERAGE FORWARD CURRENT (AMPS) IFSM , PEAK HALF-WAVE CURRENT (AMPS) 100 70 50 30 20 3.0 5.0 7.0 10 20 30 50 70 100 PF(AV) , AVERAGE FORWARD POWER DISSIPATION (WATTS) IF(AV) , AVERAGE FORWARD CURRENT (AMPS) SQUARE WAVE 12 10 8.0 dc 6.0 4.0 2.0 0 0 25 50 75 100 125 50 14 12 10 SQUARE WAVE 8.0 6.0 4.0 2.0 0 140 145 150 155 160 165 170 175 180 Figure 6. Current Derating, Case, Per Leg RqJA = 16°C/W (With TO-220 Heat Sink) RqJA = 60°C/W (No Heat Sink) 14 45 TC, CASE TEMPERATURE (°C) 20 16 40 dc 16 Figure 5. Maximum Surge Capability dc 35 18 NUMBER OF CYCLES AT 60 Hz 18 30 Figure 4. Maximum Reverse Current 200 2.0 25 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Reverse Current 1.0 20 150 175 TA, AMBIENT TEMPERATURE (°C) 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 TJ = 175°C SQUARE WAVE 0 Figure 7. Current Derating, Ambient, Per Leg 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 IF(AV), AVERAGE FORWARD CURRENT (AMPS) Figure 8. Forward Power Dissipation http://onsemi.com 4 dc r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) MBR2045CT, MBRF2045CT 1.0 0.7 0.5 0.3 0.2 Ppk Ppk tp 0.1 0.07 0.05 TIME t1 DUTY CYCLE, D = tp/t1 PEAK POWER, Ppk, is peak of an equivalent square power pulse. DTJL = Ppk • RqJL [D + (1 - D) • r(t1 + tp) + r(tp) - r(t1)] where: DTJL = the increase in junction temperature above the lead temperature. r(t) = normalized value of transient thermal resistance at time, t, i.e.: r(t1 + tp) = normalized value of transient thermal resistance at time, t1 + tp, etc. 0.03 0.02 0.01 0.01 0.1 1.0 10 t, TIME (ms) 100 1000 R(t), TRANSIENT THERMAL RESISTANCE Figure 9. Thermal Response for MBR2045CT 100 10 D = 0.5 0.2 0.1 0.05 0.02 1.0 0.01 0.1 P(pk) 0.01 t1 SINGLE PULSE t2 DUTY CYCLE, D = t1/t2 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000 t1, TIME (sec) R(t), TRANSIENT THERMAL RESISTANCE Figure 10. Thermal Response Junction−to−Ambient for MBRF2045CT 10 D = 0.5 1.0 0.1 0.2 0.1 0.05 0.02 0.01 0.01 P(pk) t1 SINGLE PULSE t2 DUTY CYCLE, D = t1/t2 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1.0 10 t1, TIME (sec) Figure 11. Thermal Response Junction−to−Case for MBRF2045CT http://onsemi.com 5 100 1000 MBR2045CT, MBRF2045CT HIGH FREQUENCY OPERATION 1000 Since current flow in a Schottky rectifier is the result of majority carrier conduction, it is not subject to junction diode forward and reverse recovery transients due to minority carrier injection and stored charge. Satisfactory circuit analysis work may be performed by using a model consisting of an ideal diode in parallel with a variable capacitance. (See Figure 12.) Rectification efficiency measurements show that operation will be satisfactory up to several megahertz. For example, relative waveform rectification efficiency is approximately 70 percent at 2.0 MHz, e.g., the ratio of dc power to RMS power in the load is 0.28 at this frequency, whereas perfect rectification would yield 0.406 for sine wave inputs. However, in contrast to ordinary junction diodes, the loss in waveform efficiency is not indicative of power loss; it is simply a result of reverse current flow through the diode capacitance, which lowers the dc output voltage. 900 C, CAPACITANCE (pF) 800 700 600 500 400 300 200 100 0 0 10 20 30 40 VR, REVERSE VOLTAGE (VOLTS) Figure 12. Typical Capacitance +150 V, 10 mAdc 2.0 kW VCC 12 V TJ = 25°C f = 1 MHz 12 Vdc D.U.T. 100 + 2N2222 2.0 ms 1.0 kHz CURRENT AMPLITUDE ADJUST 0-10 AMPS 2N6277 100 CARBON 1.0 CARBON 1N5817 Figure 13. Test Circuit for dv/dt and Reverse Surge Current http://onsemi.com 6 4.0 mF 50 MBR2045CT, MBRF2045CT PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AF −T− B F T SEATING PLANE C S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q U 1 2 3 H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.161 0.095 0.105 0.110 0.155 0.014 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 STYLE 6: PIN 1. 2. 3. 4. http://onsemi.com 7 ANODE CATHODE ANODE CATHODE MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 4.09 2.42 2.66 2.80 3.93 0.36 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 MBR2045CT, MBRF2045CT PACKAGE DIMENSIONS TO−220 FULLPAK CASE 221D−03 ISSUE J −T− −B− F SEATING PLANE C S Q U A 1 2 3 H −Y− K G N L D J R 3 PL 0.25 (0.010) M B M Y NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH 3. 221D-01 THRU 221D-02 OBSOLETE, NEW STANDARD 221D-03. DIM A B C D F G H J K L N Q R S U INCHES MIN MAX 0.617 0.635 0.392 0.419 0.177 0.193 0.024 0.039 0.116 0.129 0.100 BSC 0.118 0.135 0.018 0.025 0.503 0.541 0.048 0.058 0.200 BSC 0.122 0.138 0.099 0.117 0.092 0.113 0.239 0.271 MILLIMETERS MIN MAX 15.67 16.12 9.96 10.63 4.50 4.90 0.60 1.00 2.95 3.28 2.54 BSC 3.00 3.43 0.45 0.63 12.78 13.73 1.23 1.47 5.08 BSC 3.10 3.50 2.51 2.96 2.34 2.87 6.06 6.88 STYLE 3: PIN 1. ANODE 2. CATHODE 3. ANODE SWITCHMODE is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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