NSR10F40 D

NSR10F40NXT5G
Schottky Barrier Diode
These Schottky barrier diodes are optimized for low forward
voltage drop and low leakage current and are offered in a Chip Scale
Package (CSP) to reduce board space. The low thermal resistance
enables designers to meet the challenging task of achieving higher
efficiency and meeting reduced space requirements.
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Features
•
•
•
•
•
•
Very Low Forward Voltage Drop − 490 mV @ 1.0 A
Low Reverse Current − 10 mA @ 10 V VR
1.0 A of Continuous Forward Current
ESD Rating − Human Body Model: Class 3B
ESD Rating − Machine Model: Class C
Very High Switching Speed
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
40 V SCHOTTKY
BARRIER DIODE
1
CATHODE
2
ANODE
MARKING
DIAGRAM
2
Typical Applications
•
•
•
•
•
PIN 1
LCD and Keypad Backlighting
Camera Photo Flash
Buck and Boost dc−dc Converters
Reverse Voltage and Current Protection
Clamping & Protection
1
DSN2
(0502)
CASE 152AD
10F40
YYY
10F40
YYY
= Specific Device Code
= Year Code
Markets
•
•
•
•
•
Mobile Handsets
MP3 Players
Digital Camera and Camcorders
Notebook PCs & PDAs
GPS
ORDERING INFORMATION
Device
NSR10F40NXT5G
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Reverse Voltage
VR
40
V
Forward Current (DC)
IF
1.0
A
Forward Surge Current (60 Hz @ 1 cycle)
IFSM
18
A
Repetitive Peak Forward Current
(Pulse Wave = 1 sec, Duty Cycle = 66%)
IFRM
4.0
A
ESD Rating:
ESD
>8
> 400
kV
V
Human Body Model
Machine Model
Package
Shipping†
DSN2
5000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
© Semiconductor Components Industries, LLC, 2014
December, 2014 − Rev. 4
1
Publication Order Number:
NSR10F40/D
NSR10F40NXT5G
THERMAL CHARACTERISTICS
Characteristic
Max
Unit
RqJA
PD
228
548
°C/W
mW
Thermal Resistance
Junction−to−Ambient (Note 2)
Total Power Dissipation @ TA = 25°C
RqJA
PD
85
1.47
°C/W
W
Storage Temperature Range
Tstg
−40 to +125
°C
Junction Operating Temperature Range
TJ
−40 to +150
°C
Max
Unit
Thermal Resistance
Junction−to−Ambient (Note 1)
Total Power Dissipation @ TA = 25°C
Symbol
Min
Typ
1. Mounted onto a 4 in square FR−4 board 50 mm sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state.
2. Mounted onto a 4 in square FR−4 board 1 in sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Characteristic
Reverse Leakage
(VR = 10 V)
(VR = 40 V)
IR
Forward Voltage
(IF = 0.5 A)
(IF = 1.0 A)
VF
Min
Typ
mA
10
100
V
0.42
0.49
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
100000
TJ = 125°C
0.1
IR, REVERSE CURRENT (mA)
IF, FORWARD CURRENT (A)
1
TJ = 150°C
0.01
150°C
10000
1000
125°C
100
75°C
10
1
25°C
0.1
0.01
0.1
25°C
0.2
−25°C
−25°C
0.4
0.3
0.001
0.5
0
5
10
15
200
TA = 25°C
180
160
140
120
100
80
60
40
20
0
5
25
30
Figure 2. Typical Reverse Current
Figure 1. Forward Voltage
0
20
VR, REVERSE VOLTAGE (V)
VF, FORWARD VOLTAGE (V)
C, CAPACITANCE (pF)
0.001
0.0
75°C
10
15
20
25
30
VR, REVERSE VOLTAGE (V)
Figure 3. Typical Capacitance
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2
35
40
35
40
NSR10F40NXT5G
PACKAGE DIMENSIONS
DSN2, 1.4x0.6, 0.75P
CASE 152AD
ISSUE B
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
0.05 C
A B
D
DIM
A
A1
b
D
E
L
L2
L3
E
0.05 C
TOP VIEW
0.05 C
MILLIMETERS
MIN
MAX
0.25
0.31
−−−
0.05
0.45
0.55
1.40 BSC
0.60 BSC
1.20
1.30
0.70
0.80
0.20
0.30
A
CATHODE BAND MONTH
CODING
0.05 C
A1
C
SEATING
PLANE
SIDE VIEW
DEC
SEP
0.05 C A B
L
L/2
NOV OCT
XXXX
YYY
JUN
b
1
MAR
FEB
JAN
0.05 C A B
L2
XXXX
Y09
L3
BOTTOM VIEW
MOUNTING FOOTPRINT*
1.55
DEVICE CODE
YEAR CODE
(EXAMPLE)
INDICATES AUG 2009
0.47
PIN 1
0.60
0.95
DIMENSIONS: MILLIMETERS
See Application Note AND8464/D for more mounting details
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and the
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PUBLICATION ORDERING INFORMATION
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Phone: 81−3−5817−1050
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3
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NSR10F40/D