NSR20F40NXT5G Schottky Barrier Diode These Schottky barrier diodes are optimized for low forward voltage drop and low leakage current and are offered in a Chip Scale Package (CSP) to reduce board space. The low thermal resistance enables designers to meet the challenging task of achieving higher efficiency and meeting reduced space requirements. http://onsemi.com Features • • • • • • • Very Low Forward Voltage Drop − 550 mV @ 2.0 A Low Reverse Current − 15 mA @ 10 V VR 2.0 A of Continuous Forward Current Power Dissipation of 665 mW with Minimum Trace ESD Rating − Human Body Model: Class 3B ESD Rating − Machine Model: Class C Very High Switching Speed These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 40 V SCHOTTKY BARRIER DIODE 1 CATHODE 2 MARKING DIAGRAM PIN 1 Typical Applications • • • • • 2 ANODE 1 LCD and Keypad Backlighting Camera Photo Flash Buck and Boost dc−dc Converters Reverse Voltage and Current Protection Clamping & Protection 20F40 YYY DSN2 (0603) CASE 152AB 20F40 YYY = Specific Device Code = Year Code Markets • • • • • Mobile Handsets MP3 Players Digital Camera and Camcorders Notebook PCs & PDAs GPS ORDERING INFORMATION Device NSR20F40NXT5G MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 40 V Forward Current (DC) IF 2.0 A Forward Surge Current (60 Hz @ 1 cycle) IFSM Shipping† DSN2 5000 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. A 28 Repetitive Peak Forward Current (Pulse Wave = 1 sec, Duty Cycle = 66%) IFRM 4.0 A ESD Rating: ESD >8 > 400 kV V Human Body Model Machine Model Package Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. © Semiconductor Components Industries, LLC, 2013 October, 2013 − Rev. 2 1 Publication Order Number: NSR20F40/D NSR20F40NXT5G THERMAL CHARACTERISTICS Characteristic Max Unit RqJA PD 213 586 °C/W mW Thermal Resistance Junction−to−Ambient (Note 2) Total Power Dissipation @ TA = 25°C RqJA PD 80 1.56 °C/W W Storage Temperature Range Tstg −40 to +125 °C Junction Temperature TJ +150 °C Max Unit Thermal Resistance Junction−to−Ambient (Note 1) Total Power Dissipation @ TA = 25°C Symbol Min Typ 1. Mounted onto a 4 in square FR−4 board 50 mm sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state. 2. Mounted onto a 4 in square FR−4 board 1 in sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Characteristic Reverse Leakage (VR = 10 V) (VR = 40 V) IR Forward Voltage (IF = 1.0 A) (IF = 2.0 A) VF 100,000 150°C IF, FORWARD CURRENT (A) 75°C 10 25°C 1 −25°C 0.1 0.01 0.001 0 5 10 15 20 mA 15 150 V 0.47 0.55 25 30 35 40 125°C 0.1 150°C 0.01 75°C 0.001 0 0.1 0.2 25°C −25°C 0.3 0.4 0.5 0.6 VR, REVERSE VOLTAGE (V) VF, FORWARD VOLTAGE (V) Figure 1. Reverse Current vs. Reverse Voltage Figure 2. Forward Current vs. Forward Voltage 400 350 C, CAPACITANCE (pF) IR, REVERSE CURRENT (mA) 125°C 100 Typ 1 10,000 1000 Min TA = 25°C 300 250 200 150 100 50 0 0 5 10 15 20 25 30 VR, REVERSE VOLTAGE (V) Figure 3. Capacitance http://onsemi.com 2 35 40 NSR20F40NXT5G PACKAGE DIMENSIONS DSN2, 1.6x0.8, 0.9P, (0603) CASE 152AB ISSUE B NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 0.05 C A B D DIM A A1 b D E L L2 L3 E 0.05 C TOP VIEW 0.05 C MILLIMETERS MIN MAX 0.25 0.31 −−− 0.05 0.55 0.65 1.60 BSC 0.80 BSC 1.45 1.55 0.90 1.00 0.25 0.35 A 0.05 C CATHODE BAND MONTH CODING A1 C SIDE VIEW SEATING PLANE DEC SEP 0.05 C A B MAR FEB JAN b 1 XXXX YYY JUN L L/2 NOV OCT 0.05 C A B XXXX Y09 L2 L3 BOTTOM VIEW MOUNTING FOOTPRINT* 1.70 0.52 DEVICE CODE YEAR CODE (EXAMPLE) INDICATES AUG 2009 0.80 PIN 1 0.70 1.05 DIMENSIONS: MILLIMETERS See Application Note AND8464/D for more mounting details *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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