NSR10F30NXT5G Schottky Barrier Diode These Schottky barrier diodes are optimized for low forward voltage drop and low leakage current and are offered in a Chip Scale Package (CSP) to reduce board space. The low thermal resistance enables designers to meet the challenging task of achieving higher efficiency and meeting reduced space requirements. http://onsemi.com Features • • • • • • Low Forward Voltage Drop − 420 mV @ 1.0 A Low Reverse Current − 20 mA @ 10 V VR 1.0 A of Continuous Forward Current ESD Rating − Human Body Model: Class 3B ESD Rating − Machine Model: Class C High Switching Speed These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 30 V SCHOTTKY BARRIER DIODE 1 CATHODE 2 MARKING DIAGRAM Typical Applications • • • • • 2 ANODE PIN 1 1 LCD and Keypad Backlighting Camera Photo Flash Buck and Boost dc−dc Converters Reverse Voltage and Current Protection Clamping & Protection 10F30 YYY DSN2 (0502) CASE 152AD 10F30 YYY = Specific Device Code = Year Code Markets • • • • • Mobile Handsets MP3 Players Digital Camera and Camcorders Notebook PCs & PDAs GPS ORDERING INFORMATION Device NSR10F30NXT5G MAXIMUM RATINGS Rating Reverse Voltage Forward Current (DC) Symbol Value Unit VR 30 V IF 1.0 A Forward Surge Current (60 Hz @ 1 cycle) IFSM 18 A ESD Rating: ESD >8 > 400 kV V Human Body Model Machine Model Package Shipping† DSN2 5000 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. © Semiconductor Components Industries, LLC, 2010 July, 2010 − Rev. 1 1 Publication Order Number: NSR10F30/D NSR10F30NXT5G THERMAL CHARACTERISTICS Characteristic Max Unit RqJA PD 228 548 °C/W mW Thermal Resistance Junction−to−Ambient (Note 2) Total Power Dissipation @ TA = 25°C RqJA PD 85 1.47 °C/W W Storage Temperature Range Tstg −40 to +125 °C Junction Temperature TJ +150 °C Max Unit Thermal Resistance Junction−to−Ambient (Note 1) Total Power Dissipation @ TA = 25°C Symbol Min Typ 1. Mounted onto a 4 in square FR−4 board 50 mm sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state. 2. Mounted onto a 4 in square FR−4 board 1 in sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Characteristic Reverse Leakage (VR = 10 V) (VR = 30 V) IR Forward Voltage (IF = 0.5 A) (IF = 1.0 A) VF Typ mA 20 100 0.400 0.450 V 0.420 0.470 100,000 10 150°C 10,000 IR, REVERSE CURRENT (mA) IF, FORWARD CURRENT (A) Min TJ = 125°C 1 TJ = 150°C 0.1 0.01 −25°C 75°C 25°C 1,000 125°C 100 75°C 10 1 25°C 0.1 0.01 −25°C 0.001 0.001 0.1 0.2 0.3 0.4 0.5 0.6 0 5 10 15 20 25 VF, FORWARD VOLTAGE (V) VR, REVERSE VOLTAGE (V) Figure 1. Forward Voltage Figure 2. Typical Reverse Current 300 TA = 25°C 250 C, CAPACITANCE (pF) 0 200 150 100 50 0 0 5 10 15 20 VR, REVERSE VOLTAGE (V) Figure 3. Typical Capacitance http://onsemi.com 2 25 30 30 NSR10F30NXT5G PACKAGE DIMENSIONS DSN2, 1.4x0.6, 0.75P CASE 152AD−01 ISSUE A NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 0.05 C A B D DIM A A1 b D E L L2 L3 E 0.05 C TOP VIEW 0.05 C A 0.05 C A1 C SIDE VIEW MILLIMETERS MIN MAX 0.25 0.31 −−− 0.05 0.45 0.55 1.40 BSC 0.60 BSC 1.20 1.30 0.70 0.80 0.20 0.30 CATHODE BAND MONTH CODING SEATING PLANE DEC NOV OCT SEP 0.05 C A B L XXXX YYY JUN L/2 b 1 MAR FEB JAN 0.05 C A B L2 L3 XXXX Y09 BOTTOM VIEW DEVICE CODE YEAR CODE (EXAMPLE) MOUNTING FOOTPRINT* INDICATES AUG 2009 1.55 0.47 PIN 1 0.60 0.95 DIMENSIONS: MILLIMETERS See Application Note AND8398/D for more mounting details *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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