PD - 95526
IRF1104S/LPbF
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Advanced Process Technology
Ultra Low On-Resistance
Surface Mount (IRF1104S)
Low-profile through-hole (IRF1104L)
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-Free
HEXFET® Power MOSFET
D
VDSS = 40V
RDS(on) = 0.009Ω
G
ID = 100A
S
Description
Fifth Generation HEXFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for
use in a wide variety of applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-resistance
in any existing surface mount package. The D2Pak is
suitable for high current applications because of its low
internal connection resistance and can dissipate up to 2.0W
in a typical surface mount application.
The through-hole version (IRF1104L) is available for lowprofile applications.
D 2 Pak
TO-262
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
100
71
Units
A
400
2.4
170
1.1
±20
350
60
17
5.0
-55 to + 175
W
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (1.6mm from case )
Thermal Resistance
Parameter
RθJC
RθJA
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Junction-to-Case
Junction-to-Ambient(PCB Mounted,steady-state)**
Typ.
Max.
Units
–––
–––
0.9
62
°C/W
1
7/20/04
IRF1104S/LPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Drain-to-Source Breakdown Voltage
40
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient –––
RDS(on)
Static Drain-to-Source On-Resistance –––
VGS(th)
Gate Threshold Voltage
2.0
gfs
Forward Transconductance
37
–––
IDSS
Drain-to-Source Leakage Current
–––
Gate-to-Source Forward Leakage
–––
IGSS
Gate-to-Source Reverse Leakage
–––
Qg
Total Gate Charge
–––
Qgs
Gate-to-Source Charge
–––
Qgd
Gate-to-Drain ("Miller") Charge
–––
td(on)
Turn-On Delay Time
–––
tr
Rise Time
–––
td(off)
Turn-Off Delay Time
–––
tf
Fall Time
–––
V(BR)DSS
Typ.
–––
0.038
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
15
114
28
19
LS
Internal Source Inductance
–––
7.5
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
2900
1100
250
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA
0.009
Ω
VGS = 10V, ID = 60A
4.0
V
VDS = VGS, ID = 250µA
–––
S
VDS = 30V, ID = 60A
25
VDS = 40V, VGS = 0V
µA
250
VDS = 32V, VGS = 0V, TJ = 150°C
100
VGS = 20V
nA
-100
VGS = -20V
93
ID = 60A
29
nC VDS = 32V
30
VGS = 10V, See Fig. 6 and 13
–––
VDD = 20V
–––
ID = 60A
ns
–––
RG = 3.6Ω
–––
RD = 0.33Ω, See Fig. 10
Between lead,
–––
nH
and center of die contact
–––
VGS = 0V
–––
pF
VDS = 25V
–––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
IS
I SM
VSD
trr
Q rr
ton
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
––– ––– 100
showing the
A
G
integral reverse
––– ––– 400
p-n junction diode.
S
––– ––– 1.3
V
TJ = 25°C, IS =60A, VGS = 0V
––– 74 110
ns
TJ = 25°C, IF =60A
––– 188 280
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting TJ = 25°C, L = 194µH
RG = 25Ω, IAS = 60A. (See Figure 12)
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Uses IRF1104 data and test conditions.
Calculated continuous current based on maximum allowable
junction temperature;for recommended current-handling of the
package refer to Design Tip # 93-4
TJ ≤ 175°C
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
ISD ≤ 60A, di/dt ≤ 304A/µs, VDD ≤ V(BR)DSS,
2
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IRF1104S/LPbF
1000
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
100
10
4.5V
20µs PULSE WIDTH
TJ = 25 °C
1
0.1
1
10
100
4.5V
10
2.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
TJ = 175 ° C
10
TJ = 25 ° C
1
V DS = 50V
20µs PULSE WIDTH
6.0
7.0
8.0
9.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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10
100
Fig 2. Typical Output Characteristics
1000
5.0
1
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
0.1
4.0
20µs PULSE WIDTH
TJ = 175 °C
1
0.1
100
VDS , Drain-to-Source Voltage (V)
100
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
10.0
ID = 100A
2.0
1.5
1.0
0.5
0.0
-60 -40 -20 0
VGS = 10V
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF1104S/LPbF
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
C, Capacitance (pF)
4000
Ciss
3000
2000
Coss
1000
20
VGS , Gate-to-Source Voltage (V)
5000
ID = 60A
VDS = 32V
VDS = 20V
15
10
5
FOR TEST CIRCUIT
SEE FIGURE 13
Crss
0
1
10
0
100
0
50
75
100
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
10000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
100
1000
ID , Drain Current (A)
ISD , Reverse Drain Current (A)
25
QG , Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
TJ = 175 ° C
100
10
TJ = 25 ° C
1
0.1
0.2
V GS = 0 V
0.8
1.4
2.0
VSD ,Source-to-Drain Voltage (V)
4
10us
Fig 7. Typical Source-Drain Diode
Forward Voltage
2.6
100us
1ms
10
1
10ms
TC = 25 ° C
TJ = 175 ° C
Single Pulse
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF1104S/LPbF
100
LIMITED BY PACKAGE
V GS
80
ID , Drain Current (A)
RD
V DS
D.U.T.
RG
60
+
-V DD
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
40
Fig 10a. Switching Time Test Circuit
20
VDS
90%
0
25
50
75
100
125
150
TC , Case Temperature ( ° C)
175
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
1
D = 0.50
0.20
0.10
0.1
0.05
0.02
0.01
0.01
0.00001
PDM
t1
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
15V
L
VDS
D.U.T
RG
IAS
20V
DRIVER
+
V
- DD
0.01Ω
tp
Fig 12a. Unclamped Inductive Test Circuit
A
EAS , Single Pulse Avalanche Energy (mJ)
IRF1104S/LPbF
800
TOP
BOTTOM
600
ID
24A
42A
60A
400
200
0
25
50
75
100
125
150
175
Starting TJ , Junction Temperature ( °C)
V(BR)DSS
tp
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I AS
Current Regulator
Same Type as D.U.T.
Fig 12b. Unclamped Inductive Waveforms
50KΩ
QG
10 V
QGS
.3µF
D.U.T.
QGD
+
V
- DS
VGS
VG
3mA
Charge
Fig 13a. Basic Gate Charge Waveform
6
12V
.2µF
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
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IRF1104S/LPbF
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
-
-
+
RG
•
•
•
•
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Driver Gate Drive
P.W.
Period
D=
+
-
V DD
P.W.
Period
VGS=10V
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
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7
IRF1104S/LPbF
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
D2Pak Part Marking Information (Lead-Free)
T H IS IS AN IR F 5 3 0 S W IT H
L O T CO D E 8 0 2 4
AS S E M B L E D O N W W 0 2 , 2 0 0 0
IN T H E AS S E M B L Y L IN E "L "
IN T E R N AT IO N AL
R E CT IF IE R
L O GO
N ote: "P " in as s em bly lin e
po s i tion in dicates "L ead-F r ee"
P AR T N U M B E R
F 53 0 S
AS S E M B L Y
L O T CO D E
D AT E CO D E
Y E AR 0 = 2 0 0 0
W E E K 02
L IN E L
OR
IN T E R N AT IO N AL
R E C T IF IE R
L O GO
AS S E M B L Y
L OT COD E
8
P AR T N U M B E R
F 530S
D AT E CO D E
P = D E S IG N AT E S L E AD -F R E E
P R O D U C T (O P T IO N AL )
Y E AR 0 = 2 0 0 0
W E E K 02
A = AS S E M B L Y S IT E CO D E
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IRF1104S/LPbF
TO-262 Package Outline
IGBT
1- GATE
2- COLLECTOR
3- EMITTER
TO-262 Part Marking Information
EXAMPLE: T HIS IS AN IRL3103L
LOT CODE 1789
AS SEMBLED ON WW 19, 1997
IN T HE ASS EMBLY LINE "C"
Note: "P" in as s embly line
pos ition indicates "Lead-Free"
INT ERNAT IONAL
RECT IFIER
LOGO
ASS EMBLY
LOT CODE
PART NUMBER
DAT E CODE
YEAR 7 = 1997
WEEK 19
LINE C
OR
INT ERNAT IONAL
RECT IFIER
LOGO
AS S EMBLY
LOT CODE
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PART NUMBER
DAT E CODE
P = DES IGNAT ES LEAD-FREE
PRODUCT (OPTIONAL)
YEAR 7 = 1997
WEEK 19
A = AS S EMBLY S ITE CODE
9
IRF1104S/LPbF
D2Pak Tape & Reel Infomation
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
FEED DIRECTION 1.85 (.073)
1.60 (.063)
1.50 (.059)
11.60 (.457)
11.40 (.449)
1.65 (.065)
0.368 (.0145)
0.342 (.0135)
15.42 (.609)
15.22 (.601)
24.30 (.957)
23.90 (.941)
TRL
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
3
30.40 (1.197)
MAX.
4
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.07/04
10
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Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/