IRF7469PbF-1
VDS
40
RDS(on) max
HEXFET® Power MOSFET
V
17
(@VGS = 10V)
mΩ
RDS(on) max
21
(@VGS = 4.5V)
Qg (typical)
ID
(@TA = 25°C)
15
nC
9.0
A
A
A
D
S
1
8
S
2
7
D
S
3
6
D
G
4
5
D
SO-8
Top View
Features
Benefits
Industry-standard pinout SO-8 Package
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial qualification
Base Part Number
Package Type
IRF7469PbF-1
SO-8
⇒
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Standard Pack
Form
Quantity
Tube/Bulk
95
Tape and Reel
4000
Orderable Part Number
IRF7469PbF-1
IRF7469TRPbF-1
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
TJ , TSTG
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Junction and Storage Temperature Range
Max.
Units
40
± 20
9.0
7.3
73
2.5
1.6
0.02
-55 to + 150
V
V
A
W
W
mW/°C
°C
Thermal Resistance
Symbol
RθJL
RθJA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
Typ.
Max.
Units
–––
–––
20
50
°C/W
Notes through are on page 8
1
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IRF7469PbF-1
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
V(BR)DSS
RDS(on)
VGS(th)
IDSS
IGSS
Min.
40
–––
–––
Static Drain-to-Source On-Resistance
–––
Gate Threshold Voltage
1.0
–––
Drain-to-Source Leakage Current
–––
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
Typ.
–––
0.04
12
15.5
–––
–––
–––
–––
–––
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250μA
––– V/°C Reference to 25°C, ID = 1mA
17
VGS = 10V, ID = 9.0A
mΩ
21
VGS = 4.5V, ID = 7.2A
3.0
V
VDS = VGS, ID = 250μA
20
VDS = 32V, VGS = 0V
μA
100
VDS = 32V, VGS = 0V, TJ = 125°C
200
VGS = 16V
nA
-200
VGS = -16V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
gfs
Qg
Qgs
Qgd
Qoss
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
17
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
15
7.0
5.0
16
11
2.2
14
3.5
2000
480
28
Max. Units
Conditions
–––
S
VDS = 20V, ID = 7.2A
23
ID = 7.2A
11
nC
VDS = 20V
8.0
VGS = 4.5V
24
VGS = 0V, VDS = 16V
–––
VDD = 20V
–––
ID = 7.2A
ns
–––
RG = 1.8Ω
–––
VGS = 4.5V
–––
VGS = 0V
–––
VDS = 20V
–––
pF
ƒ = 1.0MHz
Avalanche Characteristics
Symbol
EAS
IAR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Typ.
Max.
Units
–––
–––
210
7.2
mJ
A
Diode Characteristics
Symbol
IS
ISM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
trr
Qrr
trr
Qrr
Reverse
Reverse
Reverse
Reverse
2
Recovery
Recovery
Recovery
Recovery
Time
Charge
Time
Charge
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Min. Typ. Max. Units
–––
–––
2.3
A
–––
–––
73
–––
–––
–––
–––
–––
–––
0.80
0.65
47
91
77
150
1.3
–––
71
140
120
230
V
ns
nC
ns
nC
Conditions
D
MOSFET symbol
showing the
G
integral reverse
S
p-n junction diode.
TJ = 25°C, IS = 7.2A, VGS = 0V
TJ = 125°C, IS = 7.2A, VGS = 0V
TJ = 25°C, IF = 7.2A, VR=15V
di/dt = 100A/μs
TJ = 125°C, IF = 7.2A, VR=20V
di/dt = 100A/μs
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IRF7469PbF-1
100
100
VGS
10V
8.0V
7.0V
5.0V
4.5V
4.0V
3.7V
BOTTOM 3.5V
3.5V
10
0.1
20μs PULSE WIDTH
TJ = 25 °C
1
10
3.5V
2.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
10
100
Fig 2. Typical Output Characteristics
100
TJ = 150 ° C
TJ = 25 ° C
V DS = 25V
20μs PULSE WIDTH
4.5
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
3
1
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
4.0
20μs PULSE WIDTH
TJ = 150 °C
10
0.1
100
VDS , Drain-to-Source Voltage (V)
10
3.5
VGS
10V
8.0V
7.0V
5.0V
4.5V
4.0V
3.7V
BOTTOM 3.5V
TOP
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
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ID = 9.0A
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 10V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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IRF7469PbF-1
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
1000
Coss
100
Crss
1
10
ID = 7.2A
VDS = 32V
VDS = 20V
8
6
4
2
10
0
100
0
5
15
20
25
30
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
I D , Drain Current (A)
TJ = 150 ° C
100
10
TJ = 25 ° C
1
0.1
0.4
V GS = 0 V
0.8
1.2
1.6
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
10
QG , Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
ISD , Reverse Drain Current (A)
C, Capacitance(pF)
10000
10
VGS , Gate-to-Source Voltage (V)
100000
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2.0
10us
100us
10
1ms
TA = 25 ° C
TJ = 150 ° C
Single Pulse
1
0.1
10ms
1
10
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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June 23, 2014
100
IRF7469PbF-1
10.0
VDS
VGS
ID , Drain Current (A)
8.0
RD
D.U.T.
RG
+
-V DD
6.0
4.5V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
4.0
Fig 10a. Switching Time Test Circuit
2.0
VDS
90%
0.0
25
50
75
100
125
150
TC , Case Temperature ( °C)
10%
VGS
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJA )
100
D = 0.50
0.20
10
0.10
0.05
0.02
1
0.01
PDM
t1
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.01
0.00001
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5
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IRF7469PbF-1
RDS(on) , Drain-to -Source On Resistance (Ω)
RDS (on) , Drain-to-Source On Resistance (Ω)
0.03
VGS = 4.5V
0.02
VGS = 10V
0.01
0
20
40
60
0.03
0.02
ID = 9.0A
0.01
3.0
80
4.0
5.0
6.0
7.0
8.0
9.0
10.0
VGS, Gate -to -Source Voltage (V)
ID , Drain Current (A)
Fig 12. On-Resistance Vs. Drain Current
Fig 13. On-Resistance Vs. Gate Voltage
Current Regulator
Same Type as D.U.T.
QG
VGS
QGS
.3μF
D.U.T.
+
V
- DS
QGD
500
EAS , Single Pulse Avalanche Energy (mJ)
50KΩ
.2μF
12V
VG
VGS
3mA
Charge
IG
ID
Current Sampling Resistors
Fig 13a&b. Basic Gate Charge Test Circuit
and Waveform
15V
V(BR)DSS
tp
L
VDS
DRIVER
D.U.T
RG
IAS
20V
I AS
tp
+
V
- DD
0.01Ω
Fig 14a&b. Unclamped Inductive Test circuit
and Waveforms
6
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A
TOP
400
BOTTOM
ID
3.2A
5.8A
7.2A
300
200
100
0
25
50
75
100
125
Starting TJ , Junction Temperature ( °C)
Fig 14c. Maximum Avalanche Energy
Vs. Drain Current
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150
IRF7469PbF-1
SO-8 Package Outline(Mosfet & Fetky)
Dimensions are shown in milimeters (inches)
D
DIM
B
5
A
8
6
7
6
H
E
1
2
3
0.25 [.010]
4
A
MIN
.0532
.0688
1.35
1.75
A1 .0040
e
e1
8X b
0.25 [.010]
A
MAX
0.25
.0098
0.10
b
.013
.020
0.33
0.51
c
.0075
.0098
0.19
0.25
D
.189
.1968
4.80
5.00
E
.1497
.1574
3.80
4.00
e
.050 BAS IC
1.27 BASIC
.025 BAS IC
0.635 BAS IC
e1
6X
MILLIMETERS
MAX
A
5
INCHES
MIN
H
.2284
.2440
5.80
6.20
K
.0099
.0196
0.25
0.50
L
.016
.050
0.40
1.27
y
0°
8°
0°
8°
K x 45°
C
A1
y
0.10 [.004]
8X c
8X L
7
C A B
F OOTPRINT
NOT ES:
1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994.
8X 0.72 [.028]
2. CONT ROLLING DIMENSION: MILLIMET ER
3. DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ].
4. OUT LINE CONFORMS T O JEDEC OUT LINE MS-012AA.
5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS .
MOLD PROT RUSIONS NOT T O EXCEED 0.15 [.006].
6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS .
MOLD PROT RUSIONS NOT T O EXCEED 0.25 [.010].
6.46 [.255]
7 DIMENS ION IS T HE LENGT H OF LEAD FOR S OLDERING T O
A S UBS T RAT E.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking Information
EXAMPLE: T HIS IS AN IRF7101 (MOSFET)
INT ERNATIONAL
RECTIFIER
LOGO
XXXX
F 7101
DAT E CODE (YWW)
P = DIS GNATES LEAD - FREE
PRODUCT (OPT IONAL)
Y = LAST DIGIT OF THE YEAR
WW = WEEK
A = AS S EMBLY S ITE CODE
LOT CODE
PART NUMBER
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
7
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IRF7469PbF-1
SO-8 Tape and Reel (Dimensions are shown in millimeters (inches))
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 8.1mH, RG = 25Ω, IAS = 7.2A.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board.
†
Qualification information
Industrial
Qualification level
Moisture Sensitivity Level
(per JEDE C JE S D47F
SO-8
RoHS compliant
††
guidelines)
MS L1
††
(per JEDE C J-S T D-020D )
Yes
† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability
†† Applicable version of JEDEC standard at the time of product release
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
8
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