PD- 95304
IRF7421D1PbF
FETKYä MOSFET / Schottky Diode
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Co-packaged HEXFET® Power
MOSFET and Schottky Diode
Ideal For Synchronous Regulator
Applications
Generation V Technology
SO-8 Footprint
Lead-Free
Description
A
A
D
A
1
8
S
2
7
D
S
3
6
D
G
4
5
D
VDSS = 30V
RDS(on) = 0.035Ω
Schottky Vf = 0.39V
Top View
The FETKYTM family of co-packaged HEXFETs and Schottky diodes offer
the designer an innovative board space saving solution for switching
regulator applications. Generation 5 HEXFETs utilize advanced processing
techniques to achieve extremely low on-resistance per silicon area. Combining
this technology with International Rectifier's low forward drop Schottky
rectifiers results in an extremely efficient device suitable for use in a wide
variety of portable electronics applications.
The SO-8 has been modified through a customized leadframe for enhanced
thermal characteristics. The SO-8 package is designed for vapor phase,
infrared or wave soldering techniques.
SO-8
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Parameter
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
dv/dt
TJ, TSTG
Continuous Drain Current, VGS@10VÃ
Pulsed Drain Current À
Power Dissipation Ã
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt Á
Junction and Storage Temperature Range
Maximum
Units
5.8
4.6
46
2.0
1.3
16
± 20
-5.0
-55 to +150
A
W
W/°C
V
V/ns
°C
Thermal Resistance Ratings
Parameter
RθJA
Maximum
Units
62.5
°C/W
Junction-to-Ambient Ã
Notes:
À Repetitive rating; pulse width limited by maximum junction temperature (see figure 11)
Á ISD ≤ 4.1A, di/dt ≤ 110A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
 Pulse width ≤ 300µs; duty cycle ≤ 2%
à Surface mounted on FR-4 board, t ≤ 10sec.
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2
IRF7421D1PbF
MOSFET Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS
RDS(on)
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
VGS(th)
gfs
IDSS
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Min.
30
—
—
1.0
4.6
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
0.026
0.040
—
—
—
—
—
—
18
2.2
5.9
6.7
27
20
16
510
200
84
Max. Units
Conditions
—
V
VGS = 0V, ID = 250µA
0.035
VGS = 10V, ID = 4.1A
Ω
0.060
VGS = 4.5V, ID = 2.1A
—
V
VDS = VGS, ID = 250µA
—
S
VDS = 15V, ID = 2.1A
1.0
VDS = 24V, VGS = 0V
µA
25
VDS = 24V, V GS = 0V, TJ = 125°C
-100
VGS = -20V
nA
100
VGS = 20V
27
ID = 4.1A
3.3
nC VDS = 24V
8.9
VGS = 10V (see figure 10) Â
—
VDD = 15V
—
ID = 4.1A
ns
—
RG = 6.2Ω
—
RD = 3.7Ω Â
—
VGS = 0V
—
pF
VDS = 25V
—
ƒ = 1.0MHz (see figure 9)
MOSFET Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current (Body Diode) —
—
3.1
A
I SM
Pulsed Source Current (Body Diode)
—
—
33
VSD
Body Diode Forward Voltage
—
—
1.0
V
trr
Reverse Recovery Time (Body Diode) — 57
86
ns
Q rr
Reverse Recovery Charge
— 93
140
nC
Conditions
TJ = 25°C, IS = 4.1A, V GS = 0V
TJ = 25°C, IF = 4.1A
di/dt = 100A/µs Â
Schottky Diode Maximum Ratings
IF(av)
I SM
Parameter
Max. Average Forward Current
Max. peak one cycle Non-repetitive
Surge current
Max. Units.
1.7
A
1.2
120
11
A
Conditions
50% Duty Cycle. Rectangular Wave, TA = 25°C
TA = 70°C
5µs sine or 3µs Rect. pulse
Following any rated
10ms sine or 6ms Rect. pulse load condition &
with VRRM applied
Schottky Diode Electrical Specifications
V FM
Parameter
Max. Forward voltage drop
IRM
Max. Reverse Leakage current
Ct
dv/dt
Max. Junction Capacitance
Max. Voltage Rate of Charge
2
Max. Units
0.50
0.62
V
0.39
0.57
0.06
mA
16
110 pF
3600 V/ µs
Conditions
IF = 1.0A, TJ = 25°C
IF = 2.0A, TJ = 25°C
IF = 1.0A, TJ = 125°C
IF = 2.0A, TJ = 125°C .
VR = 30V TJ = 25°C
TJ = 125°C
VR = 5Vdc ( 100kHz to 1 MHz) 25°C
Rated VR
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IRF7421D1PbF
Power Mosfet Characteristics
100
100
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
I D, Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
TOP
TOP
10
3.0V
1
0.1
20µs PULSE WIDTH
TJ = 25°C
A
1
10
3.0V
20µs PULSE WIDTH
TJ = 150°C
A
1
10
0.1
V DS , Drain-to-Source Voltage (V)
10
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
100
100
ISD , Reverse Drain Current (A)
I D , Drain-to-Source Current (A)
1
VDS , Drain-to-Source Voltage (V)
TJ = 150°C
TJ = 25°C
10
V DS = 10V
20µs PULSE WIDTH
1
3.0
3.5
4.0
4.5
5.0
5.5
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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A
6.0
10
TJ = 150°C
TJ = 25°C
VGS = 0V
1
0.4
0.8
1.2
1.6
2.0
A
2.4
VSD , Source-to-Drain Voltage (V)
Fig 4. Typical Source-Drain Diode
Forward Voltage
3
IRF7421D1PbF
R DS(on) , Drain-to-Source On Resistance
(Normalized)
2.0
I D = 4.1A
1.5
1.0
0.5
VGS = 10V
0.0
-60
-40
-20
0
20
40
60
80
A
RDS (on) , Drain-to-Source On Resistance (Ω)
Power Mosfet Characteristics
100 120 140 160
0.2
0.1
0.0
0
5
TJ , Junction Temperature (°C)
I
Fig 5. Normalized On-Resistance
Vs. Temperature
25
30
35
, , Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R DS(on)
0.06
I D , Drain Current (A)
RDS (on) , Drain-to-Source On Resistance (Ω)
20
100
0.05
0.04
I
= 5.8A
0.03
10
3
6
9
12
Fig 7. Typical On-Resistance Vs. Gate
Voltage
15
A
100µs
1ms
1
0.02
V /5 , Gate-to-Source Voltage (V)
4
15
Fig 6. Typical On-Resistance Vs. Drain
Current
0.07
0.01
10
0.1
10ms
TA = 25°C
TJ = 150°C
Single Pulse
0.1
1
10
A
100
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF7421D1PbF
Power Mosfet Characteristics
1000
V GS , Gate-to-Source Voltage (V)
800
C, Capacitance (pF)
20
V GS = 0V,
f = 1MHz
C iss = Cgs + C gd , Cds SHORTED
C rss = C gd
C oss = C ds + C gd
V DS = 24V
V DS = 15V
16
Ciss
600
I D = 4.1A
12
Coss
400
Crss
200
0
1
10
100
8
4
FOR TEST CIRCUIT
SEE FIGURE 9
0
A
0
5
VDS , Drain-to-Source Voltage (V)
10
15
20
25
30
Q G , Total Gate Charge (nC)
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
Thermal Response (Z thJA )
100
D = 0.50
0.20
10
0.10
0.05
0.02
1
PDM
0.01
t1
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.1
0.0001
0.001
0.01
0.1
1
10
100
t1, Rectangular Pulse Duration (sec)
Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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A
IRF7421D1PbF
Schottky Diode Characteristics
100
Reverse Current - IR (mA)
Instantaneous Forward Current - IF (A)
10
10
J 1
0.01
0.001
0.0001
1
0.1
)
0
5
10
15
20
25
30
R TJ = 150°C
TJ = 125°C
Fig. 13 - Typical Values of Reverse
Current Vs. Reverse Voltage
TJ = 25°C
0.1
0.0
0.2
0.4
0.6
0.8
1.0
Forward Voltage Drop - VFM (V)
Fig. 12 -Typical Forward Voltage Drop Characteristics
Junction Capacitance - C T (pF)
1000
100
TJ = 25°C
A
10
0
10
20
30
Reverse Voltage - V R (V)
Fig.14 - Typical Junction Capacitance Vs.
Reverse Voltage
6
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IRF7421D1PbF
SO-8 (Fetky) Package Outline
D
DIM
B
8
6
7
6
MIN
.0532
.0688
1.35
1.75
A1 .0040
.0098
0.10
0.25
b
.013
.020
0.33
0.51
c
.0075
.0098
0.19
0.25
D
.189
.1968
4.80
5.00
E
.1497
.1574
3.80
4.00
e
.050 BAS IC
1.27 BAS IC
e1
A
5
H
E
1
6X
2
3
0.25 [.010]
4
A
e
e1
8X b
0.25 [.010]
A
A1
MILLIMET ERS
MAX
5
A
INCHES
MIN
MAX
.025 BAS IC
0.635 BASIC
H
.2284
.2440
5.80
6.20
K
.0099
.0196
0.25
0.50
L
.016
.050
0.40
1.27
y
0°
8°
0°
8°
K x 45°
C
y
0.10 [.004]
8X c
8X L
7
C A B
FOOTPRINT
NOTES :
1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994.
2. CONTROLLING DIMENS ION: MILLIME TER
8X 0.72 [.028]
3. DIMENS IONS ARE S HOWN IN MILLIMETERS [INCHES ].
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS -012AA.
5 DIMENS ION DOE S NOT INCLUDE MOLD PROT RUS IONS .
MOLD PROTRUS IONS NOT TO EXCE ED 0.15 [.006].
6.46 [.255]
6 DIMENS ION DOE S NOT INCLUDE MOLD PROT RUS IONS .
MOLD PROTRUS IONS NOT TO EXCE ED 0.25 [.010].
7 DIMENS ION IS THE LE NGTH OF LEAD FOR S OLDERING TO
A S UBS TRATE.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 (Fetky) Part Marking Information
EXAMPLE: T HIS IS AN IRF7807D1 (FET KY)
INTERNAT IONAL
RECT IFIER
LOGO
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XXXX
807D1
DAT E CODE (YWW)
P = DIS GNATES LEAD - FREE
PRODUCT (OPTIONAL)
Y = LAS T DIGIT OF T HE YEAR
WW = WEEK
A = AS S EMBLY S IT E CODE
LOT CODE
PART NUMBER
7
IRF7421D1PbF
SO-8 Tape and Reel
Dimensions are shown in milimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualifications Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.10/04
8
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