IRF9310PbF-1 HEXFET® Power MOSFET VDS -30 RDS(on) max V 4.6 (@VGS = -10V) mΩ RDS(on) max 6.8 (@VGS = -4.5V) Qg (typical) ID (@TA = 25°C) 58 nC -20 A S 1 8 D S 2 7 D S 3 6 D G 4 5 D SO-8 Features Benefits Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial qualification Base Part Number Package Type IRF9310PbF-1 SO-8 ⇒ Standard Pack Form Tube/Bulk Tape and Reel Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Orderable Part Number Quantity 95 4000 IRF9310PbF-1 IRF9310TRPbF-1 Absolute Maximum Ratings Max. Parameter VDS Drain-to-Source Voltage -30 VGS ± 20 ID @ TA = 25°C Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V ID @ TA = 70°C Continuous Drain Current, VGS @ 10V -16 IDM Pulsed Drain Current -160 PD @TA = 25°C Power Dissipation PD @TA = 70°C Power Dissipation f f Units V -20 c 2.5 1.6 Linear Derating Factor 0.02 TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range A W W/°C °C Notes through are on page 2 1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback June 30, 2014 IRF9310PbF-1 Static @ TJ = 25°C (unless otherwise specified) Parameter Conditions Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage -30 ––– ––– ΔΒVDSS/ΔTJ RDS(on) Breakdown Voltage Temp. Coefficient ––– ––– 0.020 3.9 ––– 4.6 5.8 -1.8 6.8 -2.4 Static Drain-to-Source On-Resistance V VGS = 0V, ID = -250μA V/°C Reference to 25°C, ID = -1mA VGS = -10V, ID = -20A mΩ VGS = -4.5V, ID = -16A e e VGS(th) Gate Threshold Voltage ––– -1.3 ΔVGS(th) IDSS Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current ––– ––– -5.8 ––– ––– ––– V VDS = VGS, ID = -100μA ––– mV/°C VDS = -24V, VGS = 0V -1.0 μA VDS = -24V, VGS = 0V, TJ = 125°C -150 IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage ––– ––– ––– ––– -100 100 nA gfs Qg Forward Transconductance Total Gate Charge 39 ––– ––– 58 ––– ––– S nC Qg Qgs Gate-to-Source Charge ––– ––– 110 17 165 ––– nC ––– ––– 28 2.8 ––– ––– Turn-On Delay Time Rise Time ––– ––– 25 47 ––– ––– td(off) tf Turn-Off Delay Time Fall Time ––– ––– 65 70 ––– ––– Ciss Input Capacitance ––– 5250 ––– Coss Crss Output Capacitance Reverse Transfer Capacitance ––– ––– 1300 880 ––– ––– h Total Gate Charge h Qgd RG td(on) tr h Gate-to-Drain Charge h Gate Resistance h VGS = -20V VGS = 20V VDS = -10V, ID = -16A VDS = -15V, VGS = -4.5V, ID = - 16A VGS = -10V VDS = -15V ID = -16A Ω ns VDD = -15V, VGS = -4.5V ID = -1.0A e RG = 1.8Ω See Figs. 20a &20b VGS = 0V pF VDS = -15V ƒ = 1.0MHz Avalanche Characteristics Parameter EAS IAR Single Pulse Avalanche Energy Avalanche Current Diode Characteristics c d Parameter Typ. Max. Units ––– ––– 630 -16 mJ A Conditions Min. Typ. Max. Units IS Continuous Source Current ISM (Body Diode) Pulsed Source Current ––– ––– -2.5 ––– ––– -160 ––– ––– -1.2 MOSFET symbol A c (Body Diode) VSD Diode Forward Voltage trr Reverse Recovery Time ––– 71 Qrr Reverse Recovery Charge ––– 12 showing the integral reverse Parameter Junction-to-Drain Lead Junction-to-Ambient f g G p-n junction diode. e V TJ = 25°C, IS = -2.5A, VGS = 0V 107 ns TJ = 25°C, IF = -2.5A, VDD = -24V 18 nC di/dt = 100A/μs Thermal Resistance RθJL RθJA D S e Typ. Max. Units ––– ––– 20 50 °C/W Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 4.9mH, RG = 25Ω, IAS = -16A. Pulse width ≤ 400μs; duty cycle ≤ 2%. When mounted on 1 inch square copper board. Rθ is measured at TJ of approximately 90°C. For DESIGN AID ONLY, not subject to production testing. 2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback June 30, 2014 IRF9310PbF-1 1000 1000 TOP 100 BOTTOM 10 VGS -10V -4.5V -3.5V -3.1V -2.9V -2.7V -2.5V -2.3V ≤60μs PULSE WIDTH Tj = 150°C -ID, Drain-to-Source Current (A) -ID, Drain-to-Source Current (A) ≤60μs PULSE WIDTH Tj = 25°C 100 1 0.1 BOTTOM -2.3V 0.01 1 0.1 1 10 100 0.1 -V DS, Drain-to-Source Voltage (V) 10 100 Fig 2. Typical Output Characteristics 1000 1.6 RDS(on) , Drain-to-Source On Resistance (Normalized) -I D, Drain-to-Source Current (Α) 1 -V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 T J = 150°C 10 T J = 25°C VDS = -10V ≤60μs PULSE WIDTH 1.0 ID = -20A VGS = -10V 1.4 1.2 1.0 0.8 0.6 1 2 3 4 5 -60 -40 -20 0 Fig 3. Typical Transfer Characteristics 100000 Fig 4. Normalized On-Resistance vs. Temperature 14.0 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd -VGS, Gate-to-Source Voltage (V) ID= -16A C oss = C ds + C gd 10000 Ciss Coss Crss 1000 20 40 60 80 100 120 140 160 T J , Junction Temperature (°C) -V GS, Gate-to-Source Voltage (V) C, Capacitance(pF) VGS -10V -4.5V -3.5V -3.1V -2.9V -2.7V -2.5V -2.3V 10 -2.3V 100 12.0 VDS= -24V VDS= -15V 10.0 8.0 6.0 4.0 2.0 0.0 1 10 100 -VDS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs.Drain-to-Source Voltage 3 TOP www.irf.com © 2014 International Rectifier 0 25 50 75 100 125 150 QG Total Gate Charge (nC) Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage Submit Datasheet Feedback June 30, 2014 IRF9310PbF-1 1000 -I D, Drain-to-Source Current (A) -I SD, Reverse Drain Current (A) 1000.00 100.00 OPERATION IN THIS AREA LIMITED BY R DS(on) 100μsec 100 T J = 150°C 10.00 T J = 25°C 1.00 1msec 10 1 T A = 25°C 0.10 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0.1 -VSD, Source-to-Drain Voltage (V) 1 10 100 -VDS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 2.5 -V GS(th), Gate threshold Voltage (V) 20 15 -I D, Drain Current (A) 10msec Tj = 150°C Single Pulse VGS = 0V 10 5 2.0 ID = -100μA 1.5 1.0 0 25 50 75 100 125 -75 -50 -25 150 0 25 50 75 100 125 150 T J , Temperature ( °C ) T A , Ambient Temperature (°C) Fig 10. Threshold Voltage vs. Temperature Fig 9. Maximum Drain Current vs. Ambient Temperature Thermal Response ( Z thJA ) °C/W 100 D = 0.50 0.20 0.10 0.05 0.02 0.01 10 1 0.1 0.01 0.001 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + T A SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 4 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback June 30, 2014 IRF9310PbF-1 RDS(on), Drain-to -Source On Resistance ( mΩ) RDS(on) , Drain-to -Source On Resistance (mΩ) 12 ID = -20A 10 8 TJ = 125°C 6 4 TJ = 25°C 2 2 4 6 8 10 12 14 16 18 14 12 10 VGS = -4.5V 8 6 VGS = -10V 4 2 20 0 20 40 80 Fig 13. Typical On-Resistance vs. Drain Current Fig 12. On-Resistance vs. Gate Voltage 1000 2700 ID TOP -1.8A -2.7A BOTTOM -16A 2100 800 Single Pulse Power (W) 2400 1800 1500 1200 900 600 600 400 200 300 0 1E-5 0 25 50 75 100 125 150 1E-4 1E-3 Starting T J , Junction Temperature (°C) D.U.T * Driver Gate Drive + - D.U.T. ISD Waveform Reverse Recovery Current + di/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test VDD + - Re-Applied Voltage Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Body Diode VDD Forward Drop Inductor Current Inductor Curent Ripple ≤ 5% Reverse Polarity of D.U.T for P-Channel P.W. Period * • • • • 1E+0 VGS=10V Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer D= Period P.W. - 1E-1 Fig 16. Typical Power vs. Time + RG 1E-2 Time (sec) Fig 14. Maximum Avalanche Energy vs. Drain Current * 100 120 140 160 -I D, Drain Current (A) -V GS, Gate -to -Source Voltage (V) EAS , Single Pulse Avalanche Energy (mJ) 60 ISD * VGS = 5V for Logic Level Devices Fig 17. Diode Reverse Recovery Test Circuit for P-Channel HEXFET® Power MOSFETs 5 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback June 30, 2014 IRF9310PbF-1 Id Vds Vgs L VCC DUT 0 20K 1K Vgs(th) SS Qgodr Fig 18a. Gate Charge Test Circuit I AS D.U.T RG IAS -V GS -20V tp Qgs2 Qgs1 Fig 18b. Gate Charge Waveform L VDS Qgd VDD A DRIVER 0.01Ω tp V(BR)DSS 15V Fig 19b. Unclamped Inductive Waveforms Fig 19a. Unclamped Inductive Test Circuit VDS RD td(on) VGS RG t d(off) tf VGS D.U.T. - + 10% V DD -VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 20a. Switching Time Test Circuit 6 tr www.irf.com © 2014 International Rectifier 90% VDS Fig 20b. Switching Time Waveforms Submit Datasheet Feedback June 30, 2014 IRF9310PbF-1 SO-8 Package Outline(Mosfet & Fetky) Dimensions are shown in milimeters (inches) D DIM B 5 A 8 6 7 6 H E 1 2 3 0.25 [.010] 4 A MIN .0532 .0688 1.35 1.75 A1 .0040 e e1 8X b 0.25 [.010] A MAX 0.25 .0098 0.10 b .013 .020 0.33 0.51 c .0075 .0098 0.19 0.25 D .189 .1968 4.80 5.00 E .1497 .1574 3.80 4.00 e .050 BAS IC 1.27 BAS IC .025 BAS IC 0.635 BAS IC e1 6X MILLIMET ERS MAX A 5 INCHES MIN H .2284 .2440 5.80 6.20 K .0099 .0196 0.25 0.50 L .016 .050 0.40 1.27 y 0° 8° 0° 8° K x 45° C y 0.10 [.004] A1 8X L 8X c 7 C A B FOOT PRINT 8X 0.72 [.028] NOTES : 1. DIMENS IONING & TOLERANCING PE R AS ME Y14.5M-1994. 2. CONT ROLLING DIME NS ION: MILLIMETE R 3. DIMENS IONS ARE S HOWN IN MILLIMETERS [INCHES ]. 4. OUTLINE CONF ORMS TO JEDEC OUTLINE MS -012AA. 6.46 [.255] 5 DIMENS ION DOE S NOT INCLUDE MOLD PROTRUS IONS . MOLD PROTRUS IONS NOT TO EXCEED 0.15 [.006]. 6 DIMENS ION DOE S NOT INCLUDE MOLD PROTRUS IONS . MOLD PROTRUS IONS NOT TO EXCEED 0.25 [.010]. 7 DIMENS ION IS THE LENGTH OF LEAD FOR S OLDERING T O A S UBS T RATE. 3X 1.27 [.050] 8X 1.78 [.070] SO-8 Part Marking Information EXAMPLE: T HIS IS AN IRF7101 (MOSFET) INT ERNATIONAL RECTIFIER LOGO XXXX F 7101 DAT E CODE (YWW) P = DIS GNATES LEAD - FREE PRODUCT (OPT IONAL) Y = LAST DIGIT OF THE YEAR WW = WEEK A = AS S EMBLY S ITE CODE LOT CODE PART NUMBER Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ 7 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback June 30, 2014 IRF9310PbF-1 SO-8 Tape and Reel (Dimensions are shown in milimeters (inches)) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ † Qualification information Industrial Qualification level Moisture Sensitivity Level (per JEDE C JE S D47F SO-8 RoHS compliant †† guidelines) MS L1 †† (per JEDE C J-S T D-020D ) Yes † Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability †† Applicable version of JEDEC standard at the time of product release IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 8 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback June 30, 2014