PD -95152A
IRFBA1405PPbF
Typical Applications
HEXFET® Power MOSFET
l Industrial Motor Drive
D
Benefits
l
l
l
l
l
l
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
VDSS = 55V
RDS(on) = 5.0mΩ
G
ID = 174A
S
Description
Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest
processing techniques to achieve extremely low on-resistance per
silicon area. Additional features of this MOSFET are a 175oC junction
operating temperature, fast switching speed and improved ruggedness
in single and repetitive avalanche. The Super-220 TM is a package that
has been designed to have the same mechanical outline and pinout as
the industry standard TO-220 but can house a considerably larger
silicon die. The result is significantly increased current handling capability
over both the TO-220 and the much larger TO-247 package. The
combination of extremely low on-resistance silicon and the Super-220
TM
package makes it ideal to reduce the component count in multiparalled
TO-220 applications, reduce system power dissipation, upgrade
existing designs or have TO-247 performance in a TO-220 outline. This
package has been designed to meet automotive, Q101, qualification
standard.
These benefits make this design an extremely efficient and reliable
device for use in a wide variety of applications.
Super-220
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
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Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Recommended clip force
Max.
174
123
680
330
2.2
± 20
560
See Fig.12a, 12b, 15, 16
5.0
-40 to + 175
-55 to + 175
300 (1.6mm from case )
20
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
N
1
08/01/11
IRFBA1405PPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Min.
55
–––
–––
2.0
69
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.057
4.3
–––
–––
–––
–––
–––
–––
170
44
62
13
190
130
110
IDSS
Drain-to-Source Leakage Current
LD
Internal Drain Inductance
–––
4.5
LS
Internal Source Inductance
–––
7.5
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
–––
–––
–––
–––
–––
5480
1210
280
5210
900
1500
V(BR)DSS
ΔV(BR)DSS/ΔTJ
IGSS
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250μA
––– V/°C Reference to 25°C, ID = 1mA
5.0
mΩ VGS = 10V, ID = 101A
4.0
V
VDS = 10V, ID = 250μA
–––
S
VDS = 25V, ID = 110A
20
VDS = 55V, VGS = 0V
μA
250
VDS = 44V, VGS = 0V, TJ = 150°C
200
VGS = 20V
nA
-200
VGS = -20V
260
ID = 101A
66
nC
VDS = 44V
93
VGS = 10V
–––
VDD = 38V
–––
ID = 110A
ns
–––
RG = 1.1Ω
–––
VGS = 10V
D
Between lead,
–––
6mm (0.25in.)
nH
G
from package
–––
and center of die contact
S
–––
VGS = 0V
–––
pF
VDS = 25V
–––
ƒ = 1.0MHz, See Fig. 5
–––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
–––
VGS = 0V, VDS = 44V, ƒ = 1.0MHz
–––
VGS = 0V, VDS = 0V to 44V
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
ton
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
––– ––– 174
showing the
A
G
integral reverse
––– ––– 680
S
p-n junction diode.
––– ––– 1.3
V
TJ = 25°C, IS = 101A, VGS = 0V
––– 88 130
ns
TJ = 25°C, IF = 101A
––– 250 380
nC di/dt = 100A/μs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
2
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
Max.
Units
–––
0.50
–––
0.45
–––
58
°C/W
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IRFBA1405PPbF
1000
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
100
TOP
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
100
10
4.5V
20μs PULSE WIDTH
TJ = 25 °C
1
0.1
1
10
4.5V
10
0.1
100
Fig 1. Typical Output Characteristics
3.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
TJ = 25 ° C
TJ = 175 ° C
100
10
V DS = 25V
20μs PULSE WIDTH
6
8
10
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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10
100
Fig 2. Typical Output Characteristics
1000
4
1
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
1
20μs PULSE WIDTH
TJ = 175 ° C
12
ID = 169A
2.5
2.0
1.5
1.0
0.5
0.0
-60 -40 -20 0
VGS = 10V
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRFBA1405PPbF
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
C, Capacitance(pF)
Coss = Cds + Cgd
10000
Ciss
Coss
1000
Crss
20
VGS , Gate-to-Source Voltage (V)
100000
10
12
8
4
0
100
FOR TEST CIRCUIT
SEE FIGURE 13
0
120
180
240
300
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
10000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
TJ = 175 ° C
1000
I D , Drain Current (A)
ISD , Reverse Drain Current (A)
60
QG , Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
100
10us
100us
100
TJ = 25 ° C
10
1
0.0
V GS = 0 V
0.5
1.0
1.5
2.0
2.5
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
VDS = 44V
VDS = 27V
16
100
1
ID = 101A
3.0
1ms
10ms
10
1
TC = 25 ° C
TJ = 175 ° C
Single Pulse
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRFBA1405PPbF
200
VDS
LIMITED BY PACKAGE
VGS
160
D.U.T.
ID , Drain Current (A)
RG
120
RD
+
-VDD
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
80
Fig 10a. Switching Time Test Circuit
40
VDS
90%
0
25
50
75
100
125
150
TC , Case Temperature ( °C)
175
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
PDM
0.01
t1
t2
0.001
0.00001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRFBA1405PPbF
EAS , Single Pulse Avalanche Energy (mJ)
1200
15V
ID
41A
71A
BOTTOM 101A
TOP
1000
DRIVER
L
VDS
D.U.T
RG
+
- VDD
IAS
20V
0.01Ω
tp
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
A
800
600
400
200
0
25
50
75
100
125
150
175
Starting TJ , Junction Temperature ( °C)
I AS
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
QG
10 V
QGS
QGD
4.0
VG
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
12V
VGS(th) , Variace ( V )
3.5
ID = 250μA
3.0
2.5
2.0
.2μF
.3μF
D.U.T.
+
V
- DS
1.5
-75 -50 -25
VGS
0
25
50
75
100 125 150 175
T J , Temperature ( °C )
3mA
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
6
Fig 14. Threshold Voltage Vs. Temperature
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IRFBA1405PPbF
1000
Avalanche Current (A)
Duty Cycle = Single Pulse
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming Δ Tj = 25°C due to
avalanche losses
0.01
100
0.05
0.10
10
1
1.0E-08
1.0E-07
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current Vs.Pulsewidth
EAR , Avalanche Energy (mJ)
600
TOP
Single Pulse
BOTTOM 10% Duty Cycle
ID = 101A
500
400
300
200
100
0
25
50
75
100
125
150
Starting T J , Junction Temperature (°C)
Fig 16. Maximum Avalanche Energy
Vs. Temperature
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Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ΔT = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
175
D = Duty cycle in avalanche = t av ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
7
IRFBA1405PPbF
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T*
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
-
-
+
RG
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VGS
*
+
-
VDD
Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
[VGS=10V ] ***
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
[VDD]
Forward Drop
Inductor Curent
Ripple ≤ 5%
[ISD ]
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 17. For N-channel HEXFET® power MOSFETs
8
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IRFBA1405PPbF
Super-220 ( TO-273AA ) Package Outline
11.00 [.433]
10.00 [.394]
A
5.00 [.196]
4.00 [.158]
9.00 [.
8.00 [.
B
0.25
1.50 [.059]
0.50 [.020]
4
15.00 [.590]
14.00 [.552]
1
4.00 [.157]
3.50 [.138]
2
3
14.50 [.570]
13.00 [.512]
4X
1.30 [.051]
3X
0.90 [.036]
2.55 [.100]
2X
13.50 [
12.50 [
0.25 [.010]
1.00 [.039]
0.70 [.028]
3.00 [.118]
2.50 [.099]
B A
MOSFET
IGBT
Notes:
1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/auto
2. For the most current drawing please refer to IR website at http://www.irf.com/package/
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Starting TJ = 25°C, L = 0.11mH
RG = 25Ω, IAS = 101A. (See Figure 12).
ISD ≤ 101A, di/dt ≤ 210A/μs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Pulse width ≤ 400μs; duty cycle ≤ 2%.
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Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS .Refer to AN-1001
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 95A.
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
9
IRFBA1405PPbF
Super-220 (TO-273AA) Part Marking Information
EXAMPLE: THIS IS AN IRFBA22N50A WITH
ASSEMBLY LOT CODE 1789
ASSEMBLED ON WW 19, 1997
IN THE ASSEMBLY LINE "C"
PART NUMBER
INTERNATIONAL RECTIFIER
LOGO
IRFBA22N50A
719C
17
89
ASSEMBLY LOT CODE
Note: "P" in assembly line position
indicates "Lead-Free"
DATE CODE
YEAR 7 = 1997
WEEK 19
LINE C
TOP
Super-220 not recommended for surface mount application
Notes:
1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/auto
2. For the most current drawing please refer to IR website at http://www.irf.com/package/
Data and specifications subject to change without notice.
This product has been designed and qualified for the industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 101N. Sepulvedablvd, El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 08/2011
10
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