PD-91866B
IRFBA22N50A
SMPS MOSFET
HEXFET® Power MOSFET
Applications
l Switch Mode Power Supply ( SMPS )
l Uninterruptible Power Supply
l High Speed Power Switching
Benefits
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Voltage and Current
l Effective Coss Specified (See AN1001)
VDSS
RDS(on) max
ID
0.23Ω
24A
500V
Super-220™
(TO-273AA)
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Recommended clip force
Max.
24
15
96
340
2.7
± 30
3.4
-55 to + 150
Units
A
W
W/°C
V
V/ns
°C
300 (1.6mm from case )
20
N
Applicable Off Line SMPS Topologies:
l
l
Full Bridge Converters
Power Factor Correction Boost
Notes
through
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are on page 8
1
12/12/00
IRFBA22N50A
Static @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
RDS(on)
VGS(th)
Parameter
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min.
500
–––
2.0
–––
–––
–––
–––
Typ.
–––
–––
–––
–––
–––
–––
–––
Max. Units
Conditions
–––
V
VGS = 0V, I D = 250µA
0.23
Ω
VGS = 10V, ID = 13.8A
4.0
V
VDS = VGS, ID = 250µA
25
VDS = 500V, VGS = 0V
µA
250
VDS = 400V, VGS = 0V, TJ = 125°C
100
VGS = 30V
nA
-100
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
gfs
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min. Typ.
12
–––
–––
–––
–––
–––
–––
–––
–––
20
–––
66
–––
46
–––
44
––– 3397
–––
505
–––
17
––– 4884
–––
134
–––
154
Max. Units
Conditions
–––
S
VDS = 50V, ID = 13.8A
114
ID = 23A
28
nC
VDS = 400V
47
VGS = 10V, See Fig. 6 and 13
–––
VDD = 250V
–––
ID = 23A
ns
–––
RG = 4.3Ω
–––
RD = 10.6Ω,See Fig. 10
–––
VGS = 0V
–––
VDS = 25V
–––
pF
ƒ = 1.0MHz, See Fig. 5
–––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
–––
VGS = 0V, VDS = 400V, ƒ = 1.0MHz
–––
VGS = 0V, VDS = 0V to 400V
Avalanche Characteristics
Parameter
EAS
IAR
EAR
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Typ.
Max.
Units
–––
–––
–––
1180
24
34
mJ
A
mJ
Typ.
Max.
Units
–––
0.50
–––
0.37
–––
58
°C/W
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Diode Characteristics
IS
ISM
VSD
trr
Qrr
ton
2
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
23
––– –––
showing the
A
G
integral reverse
––– –––
92
S
p-n junction diode.
––– ––– 1.5
V
TJ = 25°C, IS = 23A, VGS = 0V
––– 490 735
ns
TJ = 25°C, IF = 23A
––– 6.4
9.6
µC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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IRFBA22N50A
100
100
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
10
1
4.5V
20µs PULSE WIDTH
T = 25 C
°
J
0.1
0.1
1
10
10
4.5V
100
TJ = 150 ° C
10
TJ = 25 ° C
V DS = 50V
20µs PULSE WIDTH
8.0
9.0
10.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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R DS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
3.0
7.0
1
10
100
Fig 2. Typical Output Characteristics
100
6.0
°
J
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
5.0
20µs PULSE WIDTH
T = 150 C
1
0.1
VDS , Drain-to-Source Voltage (V)
1
4.0
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
I D = 23A
2.5
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 10V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRFBA22N50A
7000
VGS , Gate-to-Source Voltage (V)
6000
C, Capacitance (pF)
20
V G S = 0V,
f = 1M Hz
C is s = Cg s + C g d , Cd s SHOR TED
C rs s = C g d
C o s s = Cd s + C g d
5000
4000
C iss
3000
C oss
2000
1000
ID = 23A
16
12
8
4
C rss
0
10
100
FOR TEST CIRCUIT
SEE FIGURE 13
0
A
1
0
1000
20
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
60
80
100
120
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
I D , Drain Current (A)
ISD , Reverse Drain Current (A)
40
QG , Total Gate Charge (nC)
V D S , D ra in-to -Source V olta ge (V)
TJ = 150 ° C
100
10
TJ = 25 ° C
1
0.4
V GS = 0 V
0.6
0.8
1.0
1.2
1.4
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
VDS = 400V
VDS = 250V
VDS = 100V
1.6
10us
100us
10
1ms
1
TC = 25 ° C
TJ = 150 ° C
Single Pulse
10
10ms
100
1000
10000
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRFBA22N50A
25
RD
VDS
VGS
20
D.U.T.
RG
+
I D , Drain Current (A)
-VDD
10V
15
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
10
Fig 10a. Switching Time Test Circuit
VDS
5
90%
0
25
50
75
100
125
150
TC , Case Temperature ( ° C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
1
D = 0.50
0.1
0.01
0.20
0.10
0.05
0.02
0.01
P DM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRFBA22N50A
+
V
- DD
IA S
20V
0 .0 1 Ω
tp
EAS , Single Pulse Avalanche Energy (mJ)
D .U .T
RG
ID
10.7A
15A
BOTTOM 24A
TOP
2000
D R IV E R
L
VDS
2500
1 5V
1500
A
1000
Fig 12a. Unclamped Inductive Test Circuit
V (B R )D SS
tp
500
0
25
50
75
100
125
150
Starting TJ , Junction Temperature ( °C)
IAS
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
QG
10 V
640
QGD
VG
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
12V
.2µF
.3µF
D.U.T.
V D S a v , A valanc he V oltage (V)
QGS
630
620
610
600
+
V
- DS
590
VGS
4
8
12
16
20
24
I a v , A v alanc he C urre nt (A )
3mA
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
6
A
0
Fig 12d. Typical Drain-to-Source Voltage
Vs. Avalanche Current
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IRFBA22N50A
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
-
-
+
•
•
•
•
RG
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Driver Gate Drive
P.W.
Period
D=
+
-
VDD
P.W.
Period
VGS=10V
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFET® Power MOSFET
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7
IRFBA22N50A
Super-220™ ( TO-273AA ) Package Outline
11.00 [.433]
10.00 [.394]
5.00 [.196]
4.00 [.158]
9.00 [.
8.00 [.
B
0.25 [
4
15.00 [.590]
14.00 [.552]
1
2
13.50 [.
12.50 [.
3
14.50 [.570]
13.00 [.512]
3X
4X
1.30 [.051]
0.90 [.036]
0.25 [.010]
B A
1.00 [.039]
0.70 [.028]
3.00 [.118]
2.50 [.099]
MOSFET
IGBT
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting TJ = 25°C, L = 3.4mH
RG = 25Ω, I AS = 24A. (See Figure 12)
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
ISD ≤ 23A, di/dt ≤ 123A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 12/00
8
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