1N4151W-V Vishay Semiconductors Small Signal Fast Switching Diode Features • Silicon Epitaxial Planar Diode • Fast switching diode • This diode is also available in other case styles including the DO-35 case with the type designation 1N4151, and the MiniMELF case with the type designation LL4151. • AEC-Q101 qualified • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC 17431 Mechanical Data Case: SOD-123 Weight: approx. 10.3 mg Packaging codes/options: GS18 / 10 k per 13" reel (8 mm tape), 10 k/box GS08 / 3 k per 7" reel (8 mm tape), 15 k/box Parts Table Part 1N4151W-V Ordering code Marking Remarks 1N4151W-V-GS18 or 1N4151W-V-GS08 A5 Tape and Reel Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Test condition Symbol Value Unit VR 50 V VRM 75 V f ≥ 50 Hz IF(AV) 1501) mA t < 1 s and Tj = 25 °C IFSM 500 mA Ptot 4101) mW Symbol Value Unit RthJA 450 1) K/W Reverse voltage Peak reverse voltage Average rectified current half wave rectification with resistive load Surge current Power dissipation 1)Valid provided that electrodes are kept at ambient temperature. Thermal Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Thermal resistance junction to ambient air Junction temperature Storage temperature range 1) Tj 150 °C Tstg - 65 to 150 °C Valid provided that electrodes are kept at ambient temperature. Document Number 85721 Rev. 1.3, 17-Aug-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 1N4151W-V Vishay Semiconductors Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Symbol Max. Unit IF = 50 mA VF 1.0 V VR = 50 V IR 50 nA VR = 20 V, Tj = 150 °C IR 50 μA IR = 5 µA (pulsed) V(BR) Forward voltage Leakage current Reverse breakdown voltage Diode capacitance Reverse recovery time Min. Typ. 75 V VF = VR = 0 V CD 2 pF IF = 10 mA to IR = 10 mA to IR = 1 mA trr 4 ns IF = 10 mA to IR = 1 mA, VR = 6 V, RL = 100 Ω trr 2 ns Typical Characteristics T j = 100 ° C 100 10 25 ° C 1 0.1 0.01 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 V F - Forward Voltage (V) 18742 Figure 1. Forward Current vs. Forward Voltage rf - Dynamic Forward Resistance (Ω) 10000 T j = 25 ° C f = 1 kHz 1000 100 10 1 0.01 18662 0.1 1 10 IF - Forward Current (mA) 100 Figure 2. Dynamic Forward Resistance vs. Forward Current www.vishay.com 2 1000 800 600 400 200 0 0 20 40 60 80 100 120 140 160180 200 Tamb - Ambient Temperature (°C) 18743 Figure 3. Admissible Power Dissipation vs. Ambient Temperature CD (VR)/CD (0 V) - Relative Capacitance (pF) I F - Forward Current (mA) 1000 Ptot - Admissible Power Dissipation (mW) Tamb = 25 °C unless otherwise specified T j = 25 ° C f = 1 MHz 1.1 1.0 0.9 0.8 0.7 0 18664 2 4 6 8 10 VR - Reverse Voltage (V) Figure 4. Relative Capacitance vs. Reverse Voltage For technical questions within your region, please contact one of the following: Document Number 85721 [email protected], [email protected], [email protected] Rev. 1.3, 17-Aug-10 1N4151W-V Vishay Semiconductors I R - Leakage Current (nA) 10000 1000 100 10 VR = 50 V 1 0 20 18744 40 60 80 100 120 140 160 180 200 Tj - Junction Temperature (°C) Figure 5. Leakage Current vs. Junction Temperature 100 Peak Forward Current (A) I FRM - Admissible Repetitive I 18709 10 ν= 0 ν = t p /T tp 0.1 T = 1/f p I FRM t T 0.2 1 0.5 10 -5 10 -4 10 -3 10 -2 10 -1 1 10 tp - Pulse Length (s) Figure 6. Admissible Repetitive Peak Forward Current vs. Pulse Duration Document Number 85721 Rev. 1.3, 17-Aug-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 3 1N4151W-V Vishay Semiconductors 0.10 (0.004) 0.15 (0.006) 8° 0.45 (0.018) 0.25 (0.010) 0° to 0.2 (0.008) 1 (0.039) 1.35 (0.053) 0.1 (0.004) max. Package Dimensions in millimeters (inches): SOD-123 0.5 (0.020) ref. Cathode bar Mounting Pad Layout 2.85 (0.112) 2.55 (0.100) 0.85 (0.033) 2.5 (0.098) 0.85 (0.033) 3.55 (0.140) 1.7 (0.067) 3.85 (0.152) 1.40 (0.055) 0.45 (0.018) 0.65 (0.026) 0.85 (0.033) Rev. 4 - Date: 24. Sep. 2009 Document no.: S8-V-3910.01-001 (4) 17432 www.vishay.com 4 For technical questions within your region, please contact one of the following: Document Number 85721 [email protected], [email protected], [email protected] Rev. 1.3, 17-Aug-10 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000