1N4448WS-V Vishay Semiconductors Small Signal Fast Switching Diode Features • These diodes are also available in other case styles including the DO-35 case with the type designation 1N4448, the MiniMELF case with the type designation LL4448, and the SOT-23 case with the type designation IMBD4448-V • Silicon Epitaxial Planar Diode • Fast switching diodes • AEC-Q101 qualified • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC 20145 Mechanical Data Case: SOD-323 Weight: approx. 4.3 mg Packaging Codes/Options: GS18/10 k per 13" reel (8 mm tape), 10 k/box GS08/3 k per 7" reel (8 mm tape), 15 k/box Parts Table Part 1N4448WS-V Ordering code Type Marking Remarks 1N4448WS-V-GS18 or 1N4448WS-V-GS08 A3 Tape and reel Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Test condition Symbol Value Unit VR 75 V VRM 100 V f ≥ 50 Hz IF(AV) 150 1) mA t < 1 s and Tj = 25 °C IFSM 350 Reverse voltage Peak reverse voltage Average rectified current half wave rectification with resistive load Surge forward current Ptot Power dissipation 1) 200 1) mA mW Valid provided that electrodes are kept at ambient temperature. Document Number 81387 Rev. 1.1, 12-Aug-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 1N4448WS-V Vishay Semiconductors Thermal Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Symbol RthJA Thermal resistance junction to ambient air Value Unit 1) K/W 650 Junction temperature Tj 150 °C Storage temperature Tstg - 65 to + 150 °C 1) Valid provided that electrodes are kept at ambient temperature. Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Forward voltage Leakage current Test condition Symbol Min. IF = 5 mA VF 620 IF = 100 mA VR = 20 V Typ. Max. Unit 720 mV VF 1000 mV IR 25 nA VR = 75 V IR 5 µA VR = 20 V, Tj = 150 °C IR 50 µA VF = VR = 0 V CD 4 pF Reverse recovery time IF = 10 mA, IR = 1 mA, VR = 6 V, RL = 100 Ω trr 4 ns Rectification efficiency f = 100 MHz, VRF = 2 V ην Diode capacitance 0.45 Rectification Efficiency Measurement Circuit 60 Ω 2 nF VRF = 2 V 5 kΩ VO 17436 www.vishay.com 2 For technical questions within your region, please contact one of the following: Document Number 81387 [email protected], [email protected], [email protected] Rev. 1.1, 12-Aug-10 1N4448WS-V Vishay Semiconductors Typical Characteristics (Tamb = 25 °C, unless otherwise specified) 103 Tj = 25 °C 1.1 1.0 CD (VR) 1 CD (0 V) Tj = 25 °C 10 IF (mA) f = 1 MHz Tj = 100 °C 102 0.9 0.8 10- 1 0.7 10- 2 0 1 2 Figure 1. Forward Characteristics 104 0 17440 VF (V) 18105 8 10 5 2 103 103 5 5 2 2 IR (nA) Rf (Ω) 6 VR (V) 104 f = 1 kHz 2 4 Figure 4. Relative Capacitance vs. Reverse Voltage Tj = 25 °C 5 2 102 5 102 5 2 2 10 10 5 5 VR = 20 V 2 2 1 10-2 10-1 1 17438 102 10 IF (mA) Figure 2. Dynamic Forward Resistance vs. Forward Current 0 17441 100 200 Tj (°C) Figure 5. Leakage Current vs. Junction Temperature Ptot - Power Dissipation (mW) 250 200 150 100 50 0 0 20324 50 100 150 200 Tamb - Ambient Temperature (°C) Figure 3. Admissible Power Dissipation vs. Ambient Temperature Document Number 81387 Rev. 1.1, 12-Aug-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 3 1N4448WS-V Vishay Semiconductors 100 5 4 3 2 I IFRM (A) 1 T = 1/fP IFRM 10 5 4 3 2 n = tP/T tP n=0 t T 0.1 0.2 0.5 5 4 3 2 0.1 10-5 2 5 10-4 2 5 10-3 2 5 10-2 2 5 10-1 2 5 1 2 5 10 tP (s) 17442 Figure 6. Admissible Repetitive Peak Forward Current vs. Pulse Duration 0.1 (0.004) max. 0° to 8 ° 0.15 (0.006) 0.10 (0.004) 0.2 (0.008) 0.8 (0.031) 1.15 (0.045) Package Dimensions in millimeters (inches): SOD-323 0.40 (0.016) 0.25 (0.010) 1.95 (0.077) 1.60 (0.063) 2.50 (0.098) 1.1 (0.043) 2.85 (0.112) 1.5 (0.059) 0.40 (0.016) 0.20 (0.008) Cathode bar Foot print recommendation: Document no.:S8-V-3910.02-001 (4) Created - Date: 24.August.2004 Rev. 5 - Date: 23.Sept.2009 17443 www.vishay.com 4 1.6 (0.063) 0.6 (0.024) 0.6 (0.024) 0.6 (0.024) For technical questions within your region, please contact one of the following: Document Number 81387 [email protected], [email protected], [email protected] Rev. 1.1, 12-Aug-10 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000