TIP131, TIP132 (NPN), TIP137 (PNP) Darlington Complementary Silicon Power Transistors Designed for general−purpose amplifier and low−speed switching applications. http://onsemi.com Features DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 80−100 VOLTS, 70 WATTS • High DC Current Gain − • • • • hFE = 2500 (Typ) @ IC = 4.0 Adc Collector−Emitter Sustaining Voltage − @ 30 mAdc VCEO(sus) = 80 Vdc (Min) − TIP131 = 100 Vdc (Min) − TIP132, TIP137 Low Collector−Emitter Saturation Voltage − VCE(sat) = 2.0 Vdc (Max) @ IC = 4.0 Adc = 3.0 Vdc (Max) @ IC = 6.0 Adc Monolithic Construction with Built−In Base−Emitter Shunt Resistors Pb−Free Packages are Available* MARKING DIAGRAM 4 TO−220AB CASE 221A STYLE 1 MAXIMUM RATINGS Rating Collector−Emitter Voltage Symbol TIP131 TIP132 TIP137 1 Unit VCEO 80 100 Vdc Collector−Base Voltage VCB 80 100 Vdc Emitter−Base Voltage VEB 5.0 Vdc IC 8.0 12 Adc Base Current IB 300 mAdc Total Power Dissipation @ TC = 25°C PD 70 W Total Power Dissipation @ TA = 25°C PD 2.0 W TJ, Tstg –65 to +150 °C Collector Current − Continuous Peak Operating and Storage Junction, Temperature Range 3 TIP13x x A Y WW G Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 1.78 °C/W Thermal Resistance, Junction−to−Ambient RqJA 63.5 °C/W TIP131 TIP131G TIP132 TIP132G Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. BASE COLLECTOR EMITTER COLLECTOR = Device Code = 1, 2, or 7 = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Device THERMAL CHARACTERISTICS Characteristic 2 STYLE 1: PIN 1. 2. 3. 4. TIP13xG AYWW TIP137 TIP137G Package Shipping TO−220 50 Units/Rail TO−220 (Pb−Free) 50 Units/Rail TO−220 50 Units/Rail TO−220 (Pb−Free) 50 Units/Rail TO−220 50 Units/Rail TO−220 (Pb−Free) 50 Units/Rail *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2011 September, 2011 − Rev. 3 1 Publication Order Number: TIP131/D TIP131, TIP132 (NPN), TIP137 (PNP) COLLECTOR PNP TIP137 COLLECTOR NPN TIP131 TIP132 BASE BASE ≈ 8.0 k ≈ 120 ≈ 8.0 k ≈ 120 EMITTER EMITTER Figure 1. Darlington Circuit Schematic ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Max 80 100 − − − − 0.5 0.5 − − 0.2 0.2 − 5.0 500 1000 − 15000 − − 2.0 3.0 − 2.5 Unit OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (Note 1) (IC = 30 mAdc, IB = 0) TIP131 TIP132, TIP137 Collector Cutoff Current (VCE = 40 Vdc, IB = 0) (VCE = 50 Vdc, IB = 0) TIP131 TIP132, TIP137 Collector Cutoff Current (VCB = 80 Vdc, IE = 0) (VCB = 100 Vdc, IE = 0) TIP131 TIP132, TIP137 Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) VCEO(sus) Vdc ICEO mAdc ICBO IEBO mAdc mAdc ON CHARACTERISTICS (Note 1) hFE DC Current Gain (IC = 1.0 Adc, VCE = 4.0 Vdc) (IC = 4.0 Adc, VCE = 4.0 Vdc) Collector−Emitter Saturation Voltage (IC = 4.0 Adc, IB = 16 mAdc) (IC = 6.0 Adc, IB = 30 mAdc) VCE(sat) Base−Emitter On Voltage (IC = 4.0 Adc, VCE = 4.0 Vdc) VBE(on) 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. http://onsemi.com 2 − Vdc Vdc TIP131, TIP132 (NPN), TIP137 (PNP) PD, POWER DISSIPATION (WATTS) TA TC 4.0 80 3.0 60 TC 2.0 40 TA 1.0 20 0 0 0 20 40 60 80 100 T, TEMPERATURE (°C) 120 140 160 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 2. Power Derating 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 P(pk) ZqJC(t) = r(t) RqJC RqJC = 1.78°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN t1 READ TIME AT t1 t2 TJ(pk) - TC = P(pk) ZqJC(t) DUTY CYCLE, D = t1/t2 0.1 0.05 0.07 0.05 0.02 0.03 0.02 0.01 SINGLE PULSE 0.01 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 t, TIME (ms) 10 Figure 3. Thermal Response http://onsemi.com 3 20 50 100 200 500 1.0 k TIP131, TIP132 (NPN), TIP137 (PNP) PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AG −T− B F T SEATING PLANE C S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q U 1 2 3 H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.036 0.142 0.161 0.095 0.105 0.110 0.161 0.014 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 STYLE 1: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.91 3.61 4.09 2.42 2.66 2.80 4.10 0.36 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 BASE COLLECTOR EMITTER COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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