TIP130, TIP131, TIP132

TIP130, TIP131, TIP132
NPN SILICON POWER DARLINGTONS
●
Designed for Complementary Use with
TIP135, TIP136 and TIP137
TO-220 PACKAGE
(TOP VIEW)
●
70 W at 25°C Case Temperature
●
8 A Continuous Collector Current
B
1
●
Minimum hFE of 1000 at 4 V, 4 A
C
2
E
3
This series is obsolete and
not recommended for new designs.
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
SYMBOL
Collector-base voltage (IE = 0)
TIP131
V CBO
E
T
E
L
O
S
B
O
TIP132
TIP130
Collector-emitter voltage (IB = 0)
TIP131
V CEO
TIP132
Emitter-base voltage
VALUE
UNIT
60
TIP130
80
V
100
60
80
V
100
VEBO
5
V
IC
8
A
ICM
12
A
IB
0.3
A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Ptot
70
W
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Ptot
2
W
½LIC2
75
mJ
Tj
-65 to +150
°C
Tstg
-65 to +150
°C
TL
260
°C
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Unclamped inductive load energy (see Note 4)
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
NOTES: 1.
2.
3.
4.
This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%.
Derate linearly to 150°C case temperature at the rate of 0.56 W/°C.
Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 5 mA, RBE = 100 Ω,
V BE(off) = 0, RS = 0.1 Ω, VCC = 20 V.
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
1
TIP130, TIP131, TIP132
NPN SILICON POWER DARLINGTONS
electrical characteristics at 25°C case temperature
PARAMETER
V(BR)CEO
ICEO
ICBO
IEBO
hFE
V CE(sat)
VBE
Cobo
VEC
Collector-emitter
breakdown voltage
TEST CONDITIONS
MIN
TIP130
IC = 30 mA
IB = 0
(see Note 5)
TYP
MAX
TIP131
80
TIP132
100
V
VCE = 30 V
IB = 0
TIP130
0.5
VCE = 40 V
IB = 0
TIP131
0.5
VCE = 50 V
IB = 0
TIP132
0.5
VCB = 60 V
IE = 0
TIP130
0.2
VCB = 80 V
IE = 0
TIP131
0.2
Collector cut-off
VCB = 100 V
IE = 0
TIP132
0.2
current
VCB = 60 V
IE = 0
TC = 100°C
TIP130
1
VCB = 80 V
IE = 0
TC = 100°C
TIP131
1
VCB = 100 V
IE = 0
TC = 100°C
TIP132
1
VEB =
5V
IC = 0
Forward current
VCE =
4V
IC = 1 A
transfer ratio
VCE =
4V
IC = 4 A
IB =
16 mA
IC = 4 A
IB =
30 mA
IC = 6 A
4V
IC = 4 A
Collector-emitter
cut-off current
Emitter cut-off
current
Collector-emitter
saturation voltage
Base-emitter
voltage
Output capacitance
Parallel diode
forward voltage
5
(see Notes 5 and 6)
VCB = 10 V
IE = 0
IE =
IB = 0
8A
mA
mA
mA
500
1000
E
T
E
L
O
S
B
O
VCE =
UNIT
60
15000
2
(see Notes 5 and 6)
3
(see Notes 5 and 6)
(see Notes 5 and 6)
V
2.5
V
200
pF
3.5
V
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
MAX
UNIT
RθJC
Junction to case thermal resistance
PARAMETER
MIN
1.78
°C/W
RθJA
Junction to free air thermal resistance
62.5
°C/W
2
TYP
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
TIP130, TIP131, TIP132
NPN SILICON POWER DARLINGTONS
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
VCE(sat) - Collector-Emitter Saturation Voltage - V
TCS130AA
50000
hFE - Typical DC Current Gain
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
TC = -40°C
TC = 25°C
TC = 100°C
10000
1000
1·0
tp = 300 µs, duty cycle < 2%
IB = I C / 100
1·5
1·0
E
T
E
L
O
S
B
O
VCE = 4 V
tp = 300 µs, duty cycle < 2%
100
0·5
TCS130AB
2·0
10
0·5
0·5
IC - Collector Current - A
1·0
TC = -40°C
TC = 25°C
TC = 100°C
10
IC - Collector Current - A
Figure 1.
Figure 2.
BASE-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
TCS130AC
VBE(sat) - Base-Emitter Saturation Voltage - V
3·0
2·5
TC = -40°C
TC = 25°C
TC = 100°C
2·0
1·5
1·0
IB = IC / 100
tp = 300 µs, duty cycle < 2%
0·5
0·5
1·0
10
IC - Collector Current - A
Figure 3.
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
3
TIP130, TIP131, TIP132
NPN SILICON POWER DARLINGTONS
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
IC - Collector Current - A
10
SAS130AB
1·0
0·1
E
T
E
L
O
S
B
O
TIP130
TIP131
TIP132
0.01
1·0
10
100
1000
VCE - Collector-Emitter Voltage - V
Figure 4.
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
TIS130AB
Ptot - Maximum Power Dissipation - W
80
70
60
50
40
30
20
10
0
0
25
50
75
100
125
150
TC - Case Temperature - °C
Figure 5.
4
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.