SavantIC Semiconductor Product Specification Silicon NPN Darlington Power Transistors TIP130/131/132 DESCRIPTION ·With TO-220C package ·DARLINGTON ·Collector saturation voltage ·Complement to type TIP135/136/137 APPLICATIONS ·Designed for general-purpose amplifier and low speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter ABSOLUTE MAXIMUM RATINGS(Tc=25 ) SYMBOL PARAMETER CONDITIONS TIP130 VCBO VCEO Collector-base voltage Collector-emitter voltage TIP131 Open emitter Emitter-base voltage IC 80 TIP132 100 TIP130 60 TIP131 UNIT 60 Open base TIP132 VEBO VALUE 80 V V 100 Open collector 5 V Collector current-DC 8 A ICM Collector current-peak 12 A IB Base current-DC 0.3 A PC Collector power dissipation 70 W Tj Junction temperature 150 Tstg Storage temperature -65~150 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.785 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Darlington Power Transistors TIP130/131/132 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS TIP130 VCEO(SUS) Collector-emitter sustaining voltage TIP131 MIN TYP. MAX UNIT 60 IC=30mA, IB=0 V 80 100 TIP132 VCE(sat)-1 Collector-emitter saturation voltage IC=4A ,IB=16mA 2.0 V VCE(sat)-2 Collector-emitter saturation voltage IC=6A ,IB=30mA 3.0 V Base-emitter on voltage IC=4A ; VCE=4V 2.5 V 0.2 mA 0.5 mA 5.0 mA VBE ICBO ICEO Collector cut-off current Collector cut-off current TIP130 VCB=60V, IE=0 TIP131 VCB=80V, IE=0 TIP132 VCB=100V, IE=0 TIP130 VCE=30V, IB=0 TIP131 VCE=40V, IB=0 TIP132 VCE=50V, IB=0 IEBO Emitter cut-off current VEB=5V; IC=0 hFE-1 DC current gain IC=1A ; VCE=4V 500 hFE-2 DC current gain IC=4A ; VCE=4V 1000 COB Output capacitance IE=0 ; VCB=10V,f=0.1MHz 2 15000 250 pF SavantIC Semiconductor Product Specification Silicon NPN Darlington Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.1mm) 3 TIP130/131/132