MPSA75, MPSA77 Darlington Transistors PNP Silicon Features • These are Pb--Free Devices* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit VCES --40 --60 Vdc VEBO --10 Vdc Collector Current -- Continuous IC --500 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C TJ, Tstg --55 to +150 °C Characteristic Symbol Max Unit Thermal Resistance, Junction--to--Ambient RθJA 200 °C/W Collector--Emitter Voltage MPSA75 MPSA77 Emitter--Base Voltage Operating and Storage Junction Temperature Range BASE 2 EMITTER 1 TO--92 CASE 29 STYLE 1 THERMAL CHARACTERISTICS 1 12 3 STRAIGHT LEAD BULK PACK Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 2 3 BENT LEAD TAPE & REEL AMMO PACK MARKING DIAGRAM MPS Axx AYWW G G xx = 75, or 77 A = Assembly Location Y = Year WW = Work Week G = Pb--Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Package Shipping† MPSA75RLRPG TO--92 (Pb--Free) 2000 / Ammo Pack MPSA77G TO--92 (Pb--Free) 5000 Units / Bulk Device *For additional information on our Pb--Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2007 April, 2007 -- Rev. 5 1 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: MPSA75/D MPSA75, MPSA77 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector--Emitter Breakdown Voltage (IC = --100 mAdc, VBE = 0) MPSA75 MPSA77 V(BR)CES --40 --60 --- --- Vdc Collector--Base Breakdown Voltage (IC = 100 mAdc, IE = 0) MPSA75 MPSA77 V(BR)CBO --40 --60 --- --- Vdc Collector Cutoff Current (VCB= --30 V, IE = 0) (VCB = --50 V, IE = 0) MPSA75 MPSA77 --- --- --100 --100 Collector Cutoff Current (VCE = --30 V, VBE = 0) (VCE = --50 V, VBE = 0) MPSA75 MPSA77 --- --- --500 --500 -- -- --100 10,000 10,000 --- --- Emitter Cutoff Current (VEB = --10 Vdc) ICBO ICES IEBO nAdc nAdc nAdc ON CHARACTERISTICS DC Current Gain (IC = --10 mA, VCE = --5.0 V) (IC = --100 mA, VCE = --5.0 V) hFE -- Collector--Emitter Saturation Voltage (IC = --100 mA, IB = --0.1 mAdc) VCE(sat) -- -- --1.5 Vdc Base--Emitter On Voltage (IC = --100 mA, VCE = --5.0 Vdc) VBE -- -- --2.0 Vdc |hfe| 1.25 2.4 -- -- SMALL--SIGNAL CHARACTERISTICS Current--Gain -- High Frequency (IC = --10 mA, VCE = --5.0 V, f = 100 MHz) http://onsemi.com 2 MPSA75, MPSA77 hFE , DC CURRENT GAIN (X1.0 K) 200 TA = 125°C 100 70 50 30 --10 V 25°C VCE = --2.0 V --5.0 V 20 10 7.0 5.0 --55°C 3.0 2.0 --0.3 --0.5 --0.7 --1.0 --2.0 --3.0 --5.0 --7.0 --10 --20 --30 --70 --50 --200 --300 --100 IC, COLLECTOR CURRENT (mA) Figure 1. DC Current Gain VCE , COLLECTOR--EMITTER VOLTAGE (VOLTS) --2.0 TA = 25°C VBE(sat) @ IC/IB = 100 V, VOLTAGE (VOLTS) --1.6 --1.2 VBE(on) @ VCE = --5.0 V --0.8 VCE(sat) @ IC/IB = 1000 IC/IB = 100 --0.4 0 --0.3 --0.5 --1.0 --2 --3 --5 --10 --20 --30 --50 IC, COLLECTOR CURRENT (mA) --100 --200 --300 --2.0 TA = 25°C --1.8 --1.6 --1.4 IC = --10 mA --50 mA --100 mA --175 mA --1.2 --1.0 --0.8 --0.6 --0.1 --0.2 --0.5 --1 --2 Figure 2. “On” Voltage --1000 VCE = --5.0 V f = 100 MHz TA = 25°C IC, COLLECTOR CURRENT (mA) |h FE |, HIGH FREQUENCY CURRENT GAIN --5 --10 --20 --50 --100--200 --500 --1K--2K --5K--10K IB, BASE CURRENT (mA) Figure 3. Collector Saturation Region 10 4.0 3.0 2.0 --300 mA 1.0 0.4 0.2 0.1 --1.0 --2.0 --5.0 --10 --20 --50 --100 --200 --500 --300 --200 TA = 25°C 1.0 s TC = 25°C --100 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT (DUTY CYCLE ≤ 10%) MPSA75 --50 --20 MPSA77 --10 --1.0 --1K 100 ms 1.0 ms --2.0 --4.0 --6.0 --10 --20 --40 --60 IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR VOLTAGE (VOLTS) Figure 4. High Frequency Current Gain Figure 5. Active Region, Safe Operating Area http://onsemi.com 3 MPSA75, MPSA77 PACKAGE DIMENSIONS TO--92 (TO--226) CASE 29--11 ISSUE AM A B STRAIGHT LEAD BULK PACK R P L SEATING PLANE K D X X G J H V C 1 SECTION X--X N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 -----0.250 -----0.080 0.105 -----0.100 0.115 -----0.135 ------ MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 -----6.35 -----2.04 2.66 -----2.54 2.93 -----3.43 ------ N A R BENT LEAD TAPE & REEL AMMO PACK B P T SEATING PLANE G K D X X J V 1 C N SECTION X--X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D G J K N P R V MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.40 0.54 2.40 2.80 0.39 0.50 12.70 -----2.04 2.66 1.50 4.00 2.93 -----3.43 -----STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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