MPSA27 Darlington Transistor NPN Silicon Features • These are Pb--Free Devices* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector--Emitter Voltage VCES 60 Vdc Emitter--Base Voltage VEBO 10 Vdc Collector Current -- Continuous IC 500 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C TJ, Tstg --55 to +150 °C Characteristic Symbol Max Unit Thermal Resistance, Junction--to--Ambient RθJA 200 °C/W Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS BASE 2 EMITTER 1 TO--92 CASE 29 STYLE 1 1 12 3 STRAIGHT LEAD BULK PACK Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 2 3 BENT LEAD TAPE & REEL AMMO PACK MARKING DIAGRAM MPS A27 AYWW G G A = Assembly Location Y = Year WW = Work Week G = Pb--Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping† MPSA27G TO--92 (Pb--Free) 5000 Units/Bulk TO--92 2000/Tape & Reel TO--92 (Pb--Free) 2000/Tape & Reel MPSA27RLRA MPSA27RLRAG *For additional information on our Pb--Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2007 April, 2007 -- Rev. 4 1 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: MPSA27/D MPSA27 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Typ Max Unit Collector--Emitter Breakdown Voltage (IC = 100 mAdc, VBE = 0) V(BR)CES 60 -- -- Vdc Collector--Base Breakdown Voltage (IC = 100 mAdc, IE = 0) V(BR)CBO 60 -- -- Vdc Collector Cutoff Current (VCB = 30 V, IE = 0) (VCB = 40 V, IE = 0) (VCB = 50 V, IE = 0) ICBO -- -- 100 nAdc Collector Cutoff Current (VCE = 30 V, VBE = 0) (VCE = 40 V, VBE = 0) (VCE = 50 V, VBE = 0) ICES -- -- 500 nAdc Emitter Cutoff Current (VEB = 10 Vdc) IEBO -- -- 100 nAdc 10,000 10,000 --- --- Characteristic OFF CHARACTERISTICS ON CHARACTERISTICS (Note 1) DC Current Gain (IC = 10 mA, VCE = 5.0 V) (IC = 100 mA, VCE = 5.0 V) hFE -- Collector--Emitter Saturation Voltage (IC = 100 mA, IB = 0.1 mAdc) VCE(sat) -- -- 1.5 Vdc Base--Emitter On Voltage (IC = 100 mA, VCE = 5.0 Vdc) VBE(on) -- -- 2.0 Vdc hfe 1.25 2.4 -- -- SMALL--SIGNAL CHARACTERISTICS Small Signal Current Gain (IC = 10 mA, VCE = 5.0 V, f = 100 MHz) 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. http://onsemi.com 2 MPSA27 VCE = 5.0 V TA = 25°C 40 VBE(S) @ IC/IB = 1.0 k 1.4 1.2 VBE(ON) @ VCE = 5.0 V 1.0 0.8 20 TA = --55°C 0 1.0 2.0 3.0 10 20 30 200 100 500 1.0 1k 100 20 30 200 Figure 1. DC Current Gain Figure 2. “ON” Voltages 500 1k 4.0 TA = 25°C 1.3 1.2 IC = 500 mA 1.1 1.0 0.8 10 IC, COLLECTOR CURRENT (mA) 1.5 0.9 2.0 3.0 IC, COLLECTOR CURRENT (mA) 1.6 1.4 VCE(S) @ IC/IB = 1.0 k 0.6 hfe , SMALL--SIGNAL CURRENT GAIN VCE , COLLECTOR--EMITTER VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 80 60 TA = 25°C 1.6 TA = 125°C 100 IC = 250 mA IC = 100 mA IC = 10 mA 0.7 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 2.0 1.0 0.8 0.6 0.4 0.2 500 1 k VCE = 5.0 V f = 100 MHz TA = 25°C 0.5 1.0 2.0 5.0 10 20 50 100 200 IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 3. Collector Saturation Region Figure 4. High Frequency Current Gain 1k I C , COLLECTOR CURRENT (mA) h FE , DC CURRENT GAIN (k) 120 1.0 ms 100 ms 500 1.0 s 200 TC = 25°C TA = 25°C 100 50 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 20 10 1.0 2.0 4.0 6.0 10 20 40 50 60 VCE, COLLECTOR--EMITTER VOLTAGE (VOLTS) Figure 5. Active Region -- Safe Operating Area http://onsemi.com 3 500 MPSA27 PACKAGE DIMENSIONS TO--92 (TO--226) CASE 29--11 ISSUE AM A B STRAIGHT LEAD BULK PACK R P L SEATING PLANE K D X X G J H V C 1 SECTION X--X N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 -----0.250 -----0.080 0.105 -----0.100 0.115 -----0.135 ------ MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 -----6.35 -----2.04 2.66 -----2.54 2.93 -----3.43 ------ N A R BENT LEAD TAPE & REEL AMMO PACK B P T SEATING PLANE G K D X X J V 1 C N SECTION X--X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D G J K N P R V MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.40 0.54 2.40 2.80 0.39 0.50 12.70 -----2.04 2.66 1.50 4.00 2.93 -----3.43 -----STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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