MPSA27 Darlington Transistor NPN Silicon Features • Pb−Free Packages are Available* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCES 60 Vdc Emitter −Base Voltage VEBO 10 Vdc Collector Current − Continuous IC 500 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C TJ, Tstg −55 to +150 °C Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W Operating and Storage Junction Temperature Range BASE 2 EMITTER 1 MARKING DIAGRAM THERMAL CHARACTERISTICS Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. TO−92 CASE 29−11 STYLE 1 1 2 MPS A27 AYWW G G 3 MPSA27 = Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device MPSA27 MPSA27G MPSA27RLRA MPSA27RLRAG MPSA27RLRM MPSA27RLRMG *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006 January, 2006 − Rev. 3 1 Package Shipping † TO−92 5000 Units/Box TO−92 (Pb−Free) 5000 Units/Box TO−92 2000/Tape & Reel TO−92 (Pb−Free) 2000/Tape & Reel TO−92 2000/Ammo Pack TO−92 (Pb−Free) 2000/Ammo Pack †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: MPSA27/D MPSA27 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector −Emitter Breakdown Voltage (IC = 100 mAdc, VBE = 0) V(BR)CES 60 − − Vdc Collector −Base Breakdown Voltage (IC = 100 mAdc, IE = 0) V(BR)CBO 60 − − Vdc Collector Cutoff Current (VCB = 30 V, IE = 0) (VCB = 40 V, IE = 0) (VCB = 50 V, IE = 0) ICBO − − 100 nAdc Collector Cutoff Current (VCE = 30 V, VBE = 0) (VCE = 40 V, VBE = 0) (VCE = 50 V, VBE = 0) ICES − − 500 nAdc Emitter Cutoff Current (VEB = 10 Vdc) IEBO − − 100 nAdc 10,000 10,000 − − − − OFF CHARACTERISTICS ON CHARACTERISTICS (Note 1) DC Current Gain (IC = 10 mA, VCE = 5.0 V) (IC = 100 mA, VCE = 5.0 V) hFE − Collector −Emitter Saturation Voltage (IC = 100 mA, IB = 0.1 mAdc) VCE(sat) − − 1.5 Vdc Base −Emitter On Voltage (IC = 100 mA, VCE = 5.0 Vdc) VBE(on) − − 2.0 Vdc hfe 1.25 2.4 − − SMALL− SIGNAL CHARACTERISTICS Small Signal Current Gain (IC = 10 mA, VCE = 5.0 V, f = 100 MHz) 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. http://onsemi.com 2 MPSA27 VCE = 5.0 V TA = 25°C 40 TA = −55°C 0 1.0 2.0 3.0 10 20 30 100 200 500 1.0 VCE(S) @ IC/IB = 1.0 k 1k 1.0 2.0 3.0 10 20 30 100 200 IC, COLLECTOR CURRENT (mA) Figure 1. DC Current Gain Figure 2. “ON” Voltages 500 1k 4.0 hfe , SMALL−SIGNAL CURRENT GAIN TA = 25°C 1.3 1.2 IC = 500 mA 1.1 1.0 0.8 VBE(ON) @ VCE = 5.0 V IC, COLLECTOR CURRENT (mA) 1.5 0.9 1.2 0.6 1.6 1.4 VBE(S) @ IC/IB = 1.0 k 1.4 0.8 20 VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 80 60 TA = 25°C 1.6 TA = 125°C 100 IC = 250 mA IC = 100 mA IC = 10 mA 0.7 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 2.0 1.0 0.8 0.6 0.4 0.2 500 1 k VCE = 5.0 V f = 100 MHz TA = 25°C 0.5 1.0 2.0 5.0 10 20 50 100 200 IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 3. Collector Saturation Region Figure 4. High Frequency Current Gain 1k I C , COLLECTOR CURRENT (mA) h FE , DC CURRENT GAIN (k) 120 1.0 ms 500 100 ms 1.0 s 200 TC = 25°C TA = 25°C 100 50 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 20 10 1.0 2.0 4.0 6.0 10 20 40 50 60 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 5. Active Region − Safe Operating Area http://onsemi.com 3 500 MPSA27 PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−11 ISSUE AL A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L SEATING PLANE DIM A B C D G H J K L N P R V K D X X G J H V C SECTION X−X 1 N INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 −−− 0.250 −−− 0.080 0.105 −−− 0.100 0.115 −−− 0.135 −−− MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 −−− 6.35 −−− 2.04 2.66 −−− 2.54 2.93 −−− 3.43 −−− STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR N ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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