MPSA28, MPSA29 MPSA29 is a Preferred Device Darlington Transistors NPN Silicon Features • Pb--Free Packages are Available* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector--Emitter Voltage MPSA28 MPSA29 VCES 80 100 Vdc Collector--Base Voltage MPSA28 MPSA29 VCBO 80 100 Vdc Emitter--Base Voltage VEBO 12 Vdc Collector Current -- Continuous IC 500 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 W mW/°C TJ, Tstg --55 to +150 °C Characteristic Symbol Max Unit Thermal Resistance, Junction--to--Ambient RθJA 200 °C/W Thermal Resistance, Junction--to--Case RθJC 83.3 °C/W Operating and Storage Junction Temperature Range BASE 2 EMITTER 1 TO--92 CASE 29 STYLE 1 1 12 3 STRAIGHT LEAD BULK PACK THERMAL CHARACTERISTICS 2 3 BENT LEAD TAPE & REEL AMMO PACK MARKING DIAGRAM MPS A2x AYWW G G Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. x = 8 or 9 A = Assembly Location Y = Year WW = Work Week G = Pb--Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device TO--92 (Pb--Free) 2000/Ammo Pack MPSA29G TO--92 (Pb--Free) 5000 Units/Bulk TO--92 2000/Ammo Pack TO--92 (Pb--Free) 2000/Ammo Pack MPSA29RLRPG © Semiconductor Components Industries, LLC, 2007 April, 2007 -- Rev. 3 1 Shipping MPSA28RLRPG MPSA29RLRP *For additional information on our Pb--Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Package Preferred devices are recommended choices for future use and best overall value. Publication Order Number: MPSA28/D MPSA28, MPSA29 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Characteristic Min Typ Max 80 100 --- --- 80 100 --- --- 12 -- -- --- --- 100 100 --- --- 500 500 -- -- 100 10,000 10,000 --- --- --- 0.7 0.8 1.2 1.5 Unit OFF CHARACTERISTICS Collector--Emitter Breakdown Voltage (IC = 100 mAdc, VBE = 0) MPSA28 MPSA29 Collector--Base Breakdown Voltage (IC = 100 mAdc, IE = 0) MPSA28 MPSA29 Emitter--Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)CES V(BR)CBO V(BR)EBO Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) MPSA28 MPSA29 Collector Cutoff Current (VCE = 60 Vdc, VBE = 0) (VCE = 80 Vdc, VBE = 0) MPSA28 MPSA29 ICBO ICES Emitter Cutoff Current (VEB = 10 Vdc, IC = 0) IEBO Vdc Vdc Vdc nAdc nAdc nAdc ON CHARACTERISTICS (Note 1) DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc) (IC = 100 mAdc, VCE = 5.0 Vdc) hFE Collector--Emitter Saturation Voltage (IC = 10 mAdc, IB = 0.01 mAdc) (IC = 100 mAdc, IB = 0.1 mAdc) VCE(sat) Base--Emitter On Voltage (IC = 100 mAdc, VCE = 5.0 Vdc) VBE(on) -- 1.4 2.0 Vdc fT 125 200 -- MHz Cobo -- 5.0 8.0 pF -- Vdc SMALL--SIGNAL CHARACTERISTICS Current--Gain -- Bandwidth Product (Note 2) (IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. 2. fT = hfe S ftest. http://onsemi.com 2 MPSA28, MPSA29 200 1.8 TA = 125°C V, VOLTAGE (VOLTS) h FE , DC CURRENT GAIN (k) VCE = 5.0 V 100 50 TA = 25°C 20 TA = --55°C 10 5.0 1.0 1.0 2.0 5.0 10 20 50 200 100 500 VBE(ON) @ VCE = 5.0 V 1.2 1.0 VCE(S) @ IC/IB = 1.0 k 0.6 1.0 1k 2.0 5.0 10 20 100 50 200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 1. DC Current Gain Figure 2. “ON” Voltages 500 1k 2.4 VCE , COLLECTOR VOLTAGE (VOLTS) 0 θV, TEMPERATURE COEFFICIENT (mV/ °C) TA = 25°C 1.4 0.8 2.0 25°C to 125°C --1.0 θVC for VCE(S) --55°C to 25°C --2.0 --3.0 25°C to 125°C --55°C to 25°C --4.0 θVB for VBE --5.0 1.0 2.0 5.0 10 20 100 50 200 TA = 25°C 2.0 IC = 500 mA 1.6 1.2 IC = 100 mA IC = 10 mA IC = 250 mA 0.8 0.4 500 1.0 2.0 0.2 10 20 100 200 1 k 1.5 k IC, COLLECTOR CURRENT (mA) IB, BASE CURRENT (mA) Figure 3. Temperature Coefficients Figure 4. Collector Saturation Region 10 500 1.0 ms h fe , HIGH FREQUENCY CURRENT GAIN 1k I C , COLLECTOR CURRENT (mA) VBE(S) @ IC/IB = 1.0 k 1.6 100 ms 1.0 s 200 TC = 25°C TA = 25°C 100 50 20 10 1.0 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT MPSA28 VALID FOR DUTY CYCLE ≤ 10% MPSA29 2.0 5.0 10 20 50 100 5.0 VCE = 5.0 V TA = 25°C f = 100 MHz 2.0 1.0 0.5 0.2 0.1 0.3 0.5 1.0 2.0 5.0 10 20 50 100 VCE, COLLECTOR--EMITTER VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA) Figure 5. Active Region -- Safe Operating Area Figure 6. High Frequency Current Gain http://onsemi.com 3 200 300 MPSA28, MPSA29 PACKAGE DIMENSIONS TO--92 (TO--226) CASE 29--11 ISSUE AM A B STRAIGHT LEAD BULK PACK R P L SEATING PLANE K D X X G J H V C 1 SECTION X--X N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 -----0.250 -----0.080 0.105 -----0.100 0.115 -----0.135 ------ MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 -----6.35 -----2.04 2.66 -----2.54 2.93 -----3.43 ------ N A R BENT LEAD TAPE & REEL AMMO PACK B P T SEATING PLANE G K D X X J V 1 C N SECTION X--X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D G J K N P R V MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.40 0.54 2.40 2.80 0.39 0.50 12.70 -----2.04 2.66 1.50 4.00 2.93 -----3.43 -----STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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