UNISONIC TECHNOLOGIES CO., LTD MPSA29 Preliminary NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC MPSA29 is a darlington transistor, it uses UTC’s advanced technology to provide customers with high DC current gain, etc. FEATURES * High DC current gain EQUIVALENT CIRCUIT 3. Collector 2. Base 1. Emitter ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free MPSA29L-T92-B MPSA29G-T92-B TO-92 MPSA29L-T92-K MPSA29G-T92-K TO-92 Note: Pin Assignment: B: Base C: Collector E: Emitter Pin Assignment 1 2 3 E B C E B C Packing Tape Box Bulk MARKING www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 3 QW-R221-019.a MPSA29 Preliminary NPN EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (TA=25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 100 V Collector-Emitter Voltage VCES 100 V Emitter-Base Voltage VEBO 12 V Collector Current-Continuous IC 500 mA 625 mW Power Dissipation @ TA=25°C PD Derate above 25°C 5.0 mW/°C 1.5 W Total Device Dissipation @ TC=25°C PD Derate above 25°C 12 mW/°C Junction Temperature TJ -55~+150 °C Storage Temperature TSTG -55~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL CHARACTERISTICS PARAMETER Junction-to-Ambient Junction-to-Case SYMBOL θJA θJC RATINGS 200 83.3 UNIT °C/W °C/W ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise noted) PARAMETER OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current ON CHARACTERISTICS (Note 1) DC Current Gain Collector-Emitter Saturation Voltage SYMBOL BVCES BVCBO BVEBO ICBO ICES IEBO hFE VCE(sat) TEST CONDITIONS IC=100μA, VBE=0 IC=100μA, IE=0 IE=10μA, IC=0 VCB=80V, IE=0 VCE=80V, VBE=0 VEB=10V, IC=0 VCE=5.0V, IC=10mA VCE=5.0V, IC=100mA IC=10mA, IB=0.01mA IC=100mA, IB=0.1mA IC=100mA, VCE=5.0V Base-Emitter On Voltage VBE(on) SMALL-SIGNAL CHARACTERISTICS Current-Gain -Bandwidth Product (Note 2) fT IC=10mA,VCE=5.0V, f=100MHz Output Capacitance Cob VCB=10V, IE=0, f=1.0MHz Notes: 1. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2.0%. 2. fT = hFE × ftest UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 100 100 12 100 500 100 V V V nA nA nA 0.7 0.8 1.4 1.2 1.5 2.0 V V V 200 5.0 8.0 MHz pF 10000 10000 125 2 of 3 QW-R221-019.a MPSA29 Preliminary NPN EPITAXIAL SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R221-019.a