MPSA29 NPN Silicon Epitaxial Planar Transistor Darlington transistor 1. Emitter 2. Base 3. Collector TO-92 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage VCBO 100 V Collector Emitter Voltage VCES 100 V Emitter Base Voltage VEBO 12 V Collector Current IC 500 mA Power Dissipation Ptot 625 mW Tj, Tstg - 55 to + 150 Operating and Storage Temperature Range C O Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 5 V, IC = 10 mA at VCE = 5 V, IC = 100 mA Collector Base Cutoff Current at VCB = 80 V Collector Emitter Cutoff Current at VCE = 80 V Emitter Base Cutoff Current at VEB = 10 V Collector Base Breakdown Voltage at IC = 100 µA Collector Emitter Breakdown Voltage at IC = 100 µA Emitter Base Breakdown Voltage at IE = 10 µA Collector Emitter Saturation Voltage at IC = 10 mA, IB = 0.01 mA at IC = 100 mA, IB = 0.1 mA Base Emitter On Voltage at IC = 100 mA, VCE = 5 V Current Gain Bandwidth Product at VCE = 5 V, IC = 10 mA, f = 100 MHz Output Capacitance at VCB = 10 V, f = 1 MHz Symbol Min. Max. Unit hFE hFE 10000 10000 - - ICBO - 100 nA ICES - 500 nA IEBO - 100 nA V(BR)CBO 100 - V V(BR)CES 100 - V V(BR)EBO 12 - V VCE (sat) - 1.2 1.5 V VBE(on) - 2 V fT 125 - MHz Cobo - 8 pF SEMTECH ELECTRONICS LTD. ® Dated : 19/04/2016 Rev:01 MPSA29 SEMTECH ELECTRONICS LTD. ® Dated : 19/04/2016 Rev:01