ONSEMI MPSA29

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by MPSA28/D
SEMICONDUCTOR TECHNICAL DATA
NPN Silicon
COLLECTOR 3
*Motorola Preferred Device
BASE
2
EMITTER 1
MAXIMUM RATINGS
Rating
Symbol
MPSA28
MPSA29
Unit
Collector – Emitter Voltage
VCES
80
100
Vdc
Collector – Base Voltage
VCBO
80
100
Vdc
Emitter – Base Voltage
VEBO
12
Vdc
Collector Current — Continuous
IC
500
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
625
5.0
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5
12
Watts
mW/°C
TJ, Tstg
– 55 to +150
°C
Operating and Storage Junction
Temperature Range
1
2
3
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
200
°C/W
Thermal Resistance, Junction to Case
RqJC
83.3
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Characteristic
Min
Typ
Max
80
100
—
—
—
—
80
100
—
—
—
—
12
—
—
—
—
—
—
100
100
—
—
—
—
500
500
—
—
100
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = 100 µAdc, VBE = 0)
Collector – Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
V(BR)CES
MPSA28
MPSA29
Vdc
V(BR)CBO
MPSA28
MPSA29
Emitter – Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
(VCB = 80 Vdc, IE = 0)
MPSA28
MPSA29
Collector Cutoff Current
(VCE = 60 Vdc, VBE = 0)
(VCE = 80 Vdc, VBE = 0)
MPSA28
MPSA29
Vdc
ICBO
nAdc
ICES
Emitter Cutoff Current
(VEB = 10 Vdc, IC = 0)
IEBO
Vdc
nAdc
nAdc
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
 Motorola, Inc. 1996
1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
10,000
10,000
—
—
—
—
—
—
0.7
0.8
1.2
1.5
Unit
ON CHARACTERISTICS(1)
DC Current Gain
(IC = 10 mAdc, VCE = 5.0 Vdc)
(IC = 100 mAdc, VCE = 5.0 Vdc)
hFE
—
Collector – Emitter Saturation Voltage
(IC = 10 mAdc, IB = 0.01 mAdc)
(IC = 100 mAdc, IB = 0.1 mAdc)
VCE(sat)
Vdc
Base – Emitter On Voltage
(IC = 100 mAdc, VCE = 5.0 Vdc)
VBE(on)
—
1.4
2.0
Vdc
fT
125
200
—
MHz
Cobo
—
5.0
8.0
pF
SMALL– SIGNAL CHARACTERISTICS
Current–Gain – Bandwidth Product(2)
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
1. Pulse Test: Pulse Width
2. fT = hfe S ftest.
2
v 300 ms, Duty Cycle v 2.0%.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
200
1.8
VBE(S) @ IC/IB = 1.0 k
TA = 125°C
V, VOLTAGE (VOLTS)
h FE , DC CURRENT GAIN (k)
VCE = 5.0 V
100
50
TA = 25°C
20
TA = –55°C
10
5.0
2.0
5.0
10
20
100
50
200
500
10
20
50
100
200
500
1k
2.4
VCE , COLLECTOR VOLTAGE (VOLTS)
qV, TEMPERATURE COEFFICIENT (mV/ °C)
5.0
Figure 2. “ON” Voltages
–55°C to 25°C
–2.0
–3.0
25°C to 125°C
–55°C to 25°C
–4.0
qVB for VBE
TA = 25°C
2.0
IC = 500 mA
1.6
1.2
IC = 100 mA
IC = 10 mA
IC = 250 mA
0.8
0.4
2.0
5.0
10
20
100
50
500
200
0.2
1.0 2.0
10
20
100 200
1 k 1.5 k
IC, COLLECTOR CURRENT (mA)
IB, BASE CURRENT (mA)
Figure 3. Temperature Coefficients
Figure 4. Collector Saturation Region
1k
10
500
1.0 ms
h fe , HIGH FREQUENCY CURRENT GAIN
I C , COLLECTOR CURRENT (mA)
2.0
Figure 1. DC Current Gain
qVC for VCE(S)
100 ms
1.0 s
200
TC = 25°C
TA = 25°C
100
10
1.0
VCE(S) @ IC/IB = 1.0 k
IC, COLLECTOR CURRENT (mA)
–1.0
20
1.0
IC, COLLECTOR CURRENT (mA)
25°C to 125°C
50
VBE(ON) @ VCE = 5.0 V
1.2
0.6
1.0
1k
0
–5.0
1.0
TA = 25°C
1.4
0.8
2.0
1.0
1.0
1.6
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
MPSA28
VALID FOR DUTY CYCLE 10%
MPSA29
v
2.0
5.0
10
20
5.0
VCE = 5.0 V
TA = 25°C
f = 100 MHz
2.0
1.0
0.5
0.2
0.1
50
100
0.3 0.5
1.0
2.0
5.0
10
20
50
100
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA)
Figure 5. Active Region — Safe Operating
Area
Figure 6. High Frequency Current Gain
Motorola Small–Signal Transistors, FETs and Diodes Device Data
200 300
3
PACKAGE DIMENSIONS
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
B
R
P
L
F
SEATING
PLANE
K
DIM
A
B
C
D
F
G
H
J
K
L
N
P
R
V
D
J
X X
G
H
V
C
1
SECTION X–X
N
N
CASE 029–04
(TO–226AA)
ISSUE AD
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.022
0.016
0.019
0.045
0.055
0.095
0.105
0.015
0.020
0.500
–––
0.250
–––
0.080
0.105
–––
0.100
0.115
–––
0.135
–––
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.41
0.55
0.41
0.48
1.15
1.39
2.42
2.66
0.39
0.50
12.70
–––
6.35
–––
2.04
2.66
–––
2.54
2.93
–––
3.43
–––
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
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4
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*MPSA28/D*
MPSA28/D
Motorola Small–Signal Transistors, FETs and Diodes Device Data