MMBD301M3T5G Silicon Hot-Carrier Diode SCHOTTKY Barrier Diode The MMBD301M3T5G device is a spin−off of our popular SOT−23 three−leaded device. It is designed primarily for high−efficiency UHF and VHF detector applications. It is readily adaptable to many other fast switching RF and digital applications and is housed in the SOT−723 surface mount package. This device is ideal for low−power surface mount applications where board space is at a premium. Features • • • • Extremely Low Minority Carrier Lifetime − 15 ps (Typ) Very Low Capacitance − 1.5 pF (Max) @ VR = 15 V Reduces Board Space These Devices are Pb−Free and Halogen Free/BFR Free http://onsemi.com 30 VOLTS SILICON HOT−CARRIER DETECTOR AND SWITCHING DIODES 3 CATHODE 1 ANODE MARKING DIAGRAM MAXIMUM RATINGS Rating Symbol Value Unit VR 30 V Forward Current (DC) IF 200 (Max) mA Total Device Dissipation @ TA = 25°C Derate above 25°C PF 200 2.0 mW mW/°C Operating Junction Temperature Range TJ −55 to +125 °C Tstg −55 to +150 °C Reverse Voltage Storage Temperature Range Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. SOT−723 CASE 631AA STYLE 2 AK M AK M = Specific Device Code = Date Code ORDERING INFORMATION Device Shipping† Package MMBD301M3T5G SOT−723 8000/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Reverse Breakdown Voltage (IR = 10 mA) Symbol Min Typ Max Unit V(BR)R 30 − − V Total Capacitance (VR = 15 V, f = 1.0 MHz) Figure 1 CT − 0.9 1.5 pF Reverse Leakage (VR = 25 V) Figure 3 IR − 13 200 nAdc Forward Voltage (IF = 1.0 mAdc) Figure 4 VF − 0.38 0.45 Vdc Forward Voltage (IF = 10 mAdc) Figure 4 VF − 0.52 0.6 Vdc © Semiconductor Components Industries, LLC, 2013 May, 2013 − Rev. 1 1 Publication Order Number: MMBD301M3/D MMBD301M3T5G TYPICAL ELECTRICAL CHARACTERISTICS 2.8 500 t , MINORITY CARRIER LIFETIME (ps) C T, TOTAL CAPACITANCE (pF) f = 1.0 MHz 2.4 2.0 1.6 1.2 0.8 0.4 400 KRAKAUER METHOD 300 200 100 0 0 0 3.0 6.0 18 9.0 12 15 21 VR, REVERSE VOLTAGE (VOLTS) 24 27 30 0 Figure 1. Total Capacitance 30 40 50 60 70 IF, FORWARD CURRENT (mA) 80 90 100 100 IF, FORWARD CURRENT (mA) IR, REVERSE LEAKAGE (m A) 20 Figure 2. Minority Carrier Lifetime 10 TA = 100°C 1.0 75°C 0.1 25°C 0.01 0.001 10 10 TA = -40°C TA = 85°C 1.0 TA = 25°C 0.1 0 6.0 12 18 VR, REVERSE VOLTAGE (VOLTS) 24 30 0.2 Figure 3. Reverse Leakage IF(PEAK) 0.4 0.6 0.8 VF, FORWARD VOLTAGE (VOLTS) 1.0 Figure 4. Forward Voltage CAPACITIVE CONDUCTION IR(PEAK) FORWARD CONDUCTION SINUSOIDAL GENERATOR BALLAST NETWORK (PADS) STORAGE CONDUCTION PADS DUT Figure 5. Krakauer Method of Measuring Lifetime http://onsemi.com 2 SAMPLING OSCILLOSCOPE (50 W INPUT) 1.2 MMBD301M3T5G PACKAGE DIMENSIONS SOT−723 CASE 631AA ISSUE D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. −X− D b1 A −Y− 3 E 1 2X HE 2 2X e b C 0.08 X Y SIDE VIEW TOP VIEW 3X 1 3X DIM A b b1 C D E e HE L L2 L L2 RECOMMENDED SOLDERING FOOTPRINT* BOTTOM VIEW MILLIMETERS MIN NOM MAX 0.45 0.50 0.55 0.15 0.21 0.27 0.25 0.31 0.37 0.07 0.12 0.17 1.15 1.20 1.25 0.75 0.80 0.85 0.40 BSC 1.15 1.20 1.25 0.29 REF 0.15 0.20 0.25 STYLE 2: PIN 1. ANODE 2. N/C 3. CATHODE 2X 0.40 2X 0.27 PACKAGE OUTLINE 1.50 3X 0.52 0.36 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent− Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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