MBD701, MMBD701LT1 Preferred Device Silicon Hot-Carrier Diodes Schottky Barrier Diodes These devices are designed primarily for high−efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low−cost, high−volume consumer and industrial/commercial requirements. They are also available in a Surface Mount package. http://onsemi.com MARKING DIAGRAMS Features • • • • • TO−92 2−Lead CASE 182 STYLE 1 Extremely Low Minority Carrier Lifetime − 15 ps (Typ) Very Low Capacitance − 1.0 pF @ VR = 20 V High Reverse Voltage − to 70 V Low Reverse Leakage − 200 nA (Max) Pb−Free Packages are Available 1 2 2 CATHODE MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 70 V Forward Power Dissipation MBD701 @ TA = 25°C MMBD701LT PF Derate above 25°C MBD701 MMBD701LT 280 200 mW 2.8 2.0 mW/°C Operating Junction Temperature Range TJ −55 to +125 °C Storage Temperature Range Tstg −55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 3 1 Symbol Min Typ Max Unit V(BR)R 70 − − V Total Capacitance (VR = 20 V, f = 1.0 MHz) Figure 1 CT − 0.5 1.0 pF Reverse Leakage (VR = 35 V) Figure 3 IR − 9.0 200 nAdc Forward Voltage (IF = 1.0 mAdc) Figure 4 VF − 0.42 0.5 Vdc Forward Voltage (IF = 10 mAdc) Figure 4 VF − 0.7 1.0 Vdc Reverse Breakdown Voltage (IR = 10 mAdc) 1 ANODE SOT−23 (TO−236) CASE 318 STYLE 8 5H M G G 2 3 CATHODE 1 ANODE 1 A = Assembly Location Y = Year WW = Work Week 5H = Device Code (SOT−23) M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic MBD 701 AYWW G G ORDERING INFORMATION Device MBD701 MBD701G MMBD701LT1 MMBD701LT1G MMBD701LT3 MMBD701LT3G Package Shipping† TO−92 1,000 Units / Box TO−92 (Pb−Free) 1,000 Units / Box SOT−23 3,000 / Tape & Reel SOT−23 3,000 / Tape & Reel (Pb−Free) SOT−23 10,000/Tape & Reel SOT−23 10,000/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2009 March, 2009 − Rev. 5 1 Publication Order Number: MBD701/D MBD701, MMBD701LT1 TYPICAL ELECTRICAL CHARACTERISTICS 500 2.0 t , MINORITY CARRIER LIFETIME (ps) C T, TOTAL CAPACITANCE (pF) f = 1.0 MHz 1.6 1.2 0.8 0.4 400 KRAKAUER METHOD 300 200 100 0 0 0 5.0 10 15 20 25 30 35 VR, REVERSE VOLTAGE (VOLTS) 40 45 50 0 10 Figure 1. Total Capacitance 80 90 100 100 IF, FORWARD CURRENT (mA) IR, REVERSE LEAKAGE (m A) 30 40 50 60 70 IF, FORWARD CURRENT (mA) Figure 2. Minority Carrier Lifetime 10 TA = 100°C 1.0 TA = 75°C 0.1 0.01 0.001 20 TA = 25°C 10 TA = -40°C TA = 85°C 1.0 TA = 25°C 0.1 0 10 20 30 VR, REVERSE VOLTAGE (VOLTS) 40 50 0 Figure 3. Reverse Leakage IF(PEAK) 0.2 0.4 0.8 1.2 VF, FORWARD VOLTAGE (VOLTS) 1.6 Figure 4. Forward Voltage CAPACITIVE CONDUCTION IR(PEAK) FORWARD CONDUCTION SINUSOIDAL GENERATOR BALLAST NETWORK (PADS) STORAGE CONDUCTION PADS DUT Figure 5. Krakauer Method of Measuring Lifetime http://onsemi.com 2 SAMPLING OSCILLOSCOPE (50 W INPUT) 2.0 MBD701, MMBD701LT1 PACKAGE DIMENSIONS TO−92 (TO−226AC) CASE 182−06 ISSUE L A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND ZONE R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R SEATING PLANE D ÉÉ ÉÉ L P J K D SECTION X−X X X G H V 1 2 C DIM A B C D G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.050 BSC 0.100 BSC 0.014 0.016 0.500 --0.250 --0.080 0.105 --0.050 0.115 --0.135 --- STYLE 1: PIN 1. ANODE 2. CATHODE N N http://onsemi.com 3 MILLIMETERS MIN MAX 4.45 5.21 4.32 5.33 3.18 4.19 0.407 0.533 1.27 BSC 2.54 BSC 0.36 0.41 12.70 --6.35 --2.03 2.66 --1.27 2.93 --3.43 --- MBD701, MMBD701LT1 PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AN NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. D SEE VIEW C 3 HE E c 1 2 e b DIM A A1 b c D E e L L1 HE 0.25 q A L A1 L1 VIEW C MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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