MAC210A8FP, MAC210A10FP Triacs Silicon Bidirectional Thyristors Designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied main terminal voltage with positive or negative gate triggering. • Blocking Voltage to 800 Volts • All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability • Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability • Gate Triggering Guaranteed in Four Modes • Indicates UL Registered — File #E69369 • Device Marking: Logo, Device Type, e.g., MAC210A8FP, Date Code http://onsemi.com ISOLATED TRIAC ( 10 AMPERES RMS 600 thru 800 VOLTS MT2 ) MT1 G MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Peak Repetitive Off−State Voltage(1) (TJ = −40 to +125°C, Sine Wave, 50 to 60 Hz, Gate Open) MAC210A8FP MAC210A10FP VDRM, VRRM On-State RMS Current (TC = +70°C)(2) Full Cycle Sine Wave 50 to 60 Hz IT(RMS) 10 Amps Peak Non−repetitive Surge Current (One Full Cycle Sine Wave, 60 Hz, TC = +70°C) Preceded and followed by rated current ITSM 100 Amps Circuit Fusing Consideration (t = 8.3 ms) I2t 40 A2s PGM 20 Watts PG(AV) 0.35 Watt Peak Gate Power (TC = +70°C, Pulse Width = 10 μs) Average Gate Power (TC = +70°C, t = 8.3 ms) Peak Gate Current (TC = +70°C, Pulse Width = 10 μsec) Value Unit Volts 600 800 IGM 2.0 Amps V(ISO) 1500 Volts Operating Junction Temperature Range TJ −40 to +125 °C Storage Temperature Range Tstg −40 to +150 °C RMS Isolation Voltage (TA = 25°C, Relative Humidity p 20%) ( ) 1 2 3 ISOLATED TO−220 Full Pack CASE 221C STYLE 3 PIN ASSIGNMENT 1 Main Terminal 1 2 Main Terminal 2 3 Gate ORDERING INFORMATION Device Package Shipping MAC210A8FP ISOLATED TO220FP 500/Box MAC210A10FP ISOLATED TO220FP 500/Box (1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. (2) The case temperature reference point for all TC measurements is a point on the center lead of the package as close as possible to the plastic body. © Semiconductor Components Industries, LLC, 2006 August, 2006 − Rev. 2 1 Publication Order Number: MAC210A8FP/D MAC210A8FP, MAC210A10FP THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 2.2 °C/W Thermal Resistance, Case to Sink RθCS 2.2 (typ) °C/W Thermal Resistance, Junction to Ambient RθJA 60 °C/W TL 260 °C Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions) Characteristic Symbol Min Typ Max Unit — — — — 10 2.0 μA mA — 1.2 1.65 Volts OFF CHARACTERISTICS Peak Repetitive Blocking Current (VD = Rated VDRM, VRRM; Gate Open) TJ = 25°C TJ = +125°C IDRM, IRRM ON CHARACTERISTICS Peak On-State Voltage (ITM = "14 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle p 2%) VTM Gate Trigger Current (Continuous dc) (Main Terminal Voltage = 12 Vdc, RL = 100 Ohms) MT2(+), G(+) MT2(+), G(−) MT2(−), G(−) MT2(−), G(+) IGT Gate Trigger Voltage (Continuous dc) (Main Terminal Voltage = 12 Vdc, RL = 100 Ohms) MT2(+), G(+) MT2(+), G(−) MT2(−), G(−) MT2(−), G(+) VGT Gate Non−Trigger Voltage (Continuous dc) (Main Terminal Voltage = 12 V, RL = 100 Ω, TJ = +125°C) All Four Quadrants VGD mA — — — — 12 12 20 35 50 50 50 75 Volts — — — — 0.9 0.9 1.1 1.4 2.0 2.0 2.0 2.5 Volts 0.2 — — Holding Current (Main Terminal Voltage = 12 Vdc, Gate Open, Initiating Current = "200 mA) IH — 6.0 50 mA Turn-On Time (Rated VDRM, ITM = 14 A, IGT = 120 mA, Rise Time = 0.1 μs, Pulse Width = 2 μs) tgt — 1.5 — μs dv/dt(c) — 5.0 — V/μs dv/dt — 100 — V/μs DYNAMIC CHARACTERISTICS Critical Rate of Rise of Commutation Voltage (VD = Rated VDRM, ITM = 14 A, Commutating di/dt = 5.0 A/ms, Gate Unenergized, TC = +70°C) Critical Rate of Rise of Off−State Voltage (VD = Rated VDRM, Exponential Voltage Rise, Gate Open, TC = +70°C) http://onsemi.com 2 MAC210A8FP, MAC210A10FP Voltage Current Characteristic of Triacs (Bidirectional Device) + Current Symbol Parameter VDRM Peak Repetitive Forward Off State Voltage IDRM Peak Forward Blocking Current VRRM Peak Repetitive Reverse Off State Voltage IRRM Peak Reverse Blocking Current VTM Maximum On State Voltage IH Holding Current VTM on state IRRM at VRRM IH Quadrant 3 MainTerminal 2 − IH off state VTM Quadrant Definitions for a Triac MT2 POSITIVE (Positive Half Cycle) + (+) MT2 Quadrant II (+) MT2 (−) IGT GATE Quadrant I (+) IGT GATE MT1 MT1 REF REF IGT − + IGT (−) MT2 (−) MT2 Quadrant III Quadrant IV (+) IGT GATE (−) IGT GATE MT1 MT1 REF REF − MT2 NEGATIVE (Negative Half Cycle) All polarities are referenced to MT1. With in−phase signals (using standard AC lines) quadrants I and III are used. http://onsemi.com 3 Quadrant 1 MainTerminal 2 + + Voltage IDRM at VDRM TYPICAL CHARACTERISTICS 130 PD(AV), AVERAGE POWER DISSIPATION (WATTS) TC , MAXIMUM ALLOWABLE CASE TEMPERATURE (° C) MAC210A8FP, MAC210A10FP CONDUCTION ANGLE = 360° 120 110 100 90 80 70 60 0 1 2 3 4 5 6 7 8 IT(RMS), RMS ON−STATE CURRENT (AMPS) 9 14 CONDUCTION ANGLE = 360° 12 10 8 6 4 2 0 10 0 1 2 3 4 5 6 7 8 IT(RMS), RMS ON−STATE CURRENT (AMPS) Figure 1. Current Derating 10 Figure 2. Power Dissipation 100 ITSM , PEAK SURGE CURRENT (AMP) 100 i T, INSTANTANEOUS ON−STATE CURRENT (AMPS) 9 50 20 10 5 TJ = 25°C 2 TJ = 125°C 1 0.5 80 60 CYCLE 40 TC = 70°C f = 60 Hz SURGE IS PRECEDED AND FOLLOWED BY RATED CURRENT 20 0 1 2 0.2 3 5 NUMBER OF CYCLES 7 10 Figure 4. Maximum Nonrepetitive Surge Current VGT, GATE TRIGGER VOLTAGE (NORMALIZED) 0.1 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 3.6 4 4.4 VT, INSTANTANEOUS ON−STATE VOLTAGE (VOLTS) Figure 3. Maximum On−State Characteristics 2 MAIN TERMINAL VOLTAGE = 12 Vdc ALL QUADRANTS 1.6 1.2 0.8 0.4 0 −60 −40 −20 0 20 40 TC, CASE TEMPERATURE (°C) 60 Figure 5. Typical Gate Trigger Voltage http://onsemi.com 4 80 2 2.8 I H , HOLDING CURRENT (NORMALIZED) I GT, GATE TRIGGER CURRENT (NORMALIZED) MAC210A8FP, MAC210A10FP MAIN TERMINAL VOLTAGE = 12 Vdc ALL QUADRANTS 1.6 1.2 0.8 0.4 0 −60 −40 −20 0 20 40 TC, CASE TEMPERATURE (°C) 60 2 1.6 1.2 0.8 0.4 0 −60 80 MAIN TERMINAL VOLTAGE = 12 Vdc ALL QUADRANTS 2.4 −40 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 6. Typical Gate Trigger Current −20 0 20 40 TC, CASE TEMPERATURE (°C) 60 80 5k 10 k Figure 7. Typical Holding Current 1 0.5 0.2 ZθJC(t) = r(t) • RθJC 0.1 0.05 0.02 0.01 0.1 0.2 0.5 1 2 5 20 50 t, TIME (ms) 100 Figure 8. Thermal Response http://onsemi.com 5 200 500 1k 2k MAC210A8FP, MAC210A10FP PACKAGE DIMENSIONS ISOLATED TO−220 Full Pack CASE 221C−02 ISSUE C −T− −B− F C P SEATING PLANE S N E A Q H 1 2 3 −Y− K Z J L R G D 3 PL 0.25 (0.010) M B M Y NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. LEAD DIMENSIONS UNCONTROLLED WITHIN DIMENSION Z. DIM A B C D E F G H J K L N P Q R S Z INCHES MIN MAX 0.680 0.700 0.388 0.408 0.175 0.195 0.025 0.040 0.340 0.355 0.140 0.150 0.100 BSC 0.110 0.155 0.018 0.028 0.500 0.550 0.045 0.070 0.049 −−− 0.270 0.290 0.480 0.500 0.090 0.120 0.105 0.115 0.070 0.090 MILLIMETERS MIN MAX 17.28 17.78 9.86 10.36 4.45 4.95 0.64 1.01 8.64 9.01 3.56 3.81 2.54 BSC 2.80 3.93 0.46 0.71 12.70 13.97 1.15 1.77 1.25 −−− 6.86 7.36 12.20 12.70 2.29 3.04 2.67 2.92 1.78 2.28 STYLE 3: PIN 1. MT 1 2. MT 2 3. GATE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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