Silicon Controlled Rectifiers

MCR218−6FP, MCR218−10FP
Preferred Device
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed primarily for half-wave ac control applications, such as
motor controls, heating controls and power supply crowbar circuits.
• Glass Passivated Junctions with Center Gate Fire for Greater
Parameter Uniformity and Stability
• Small, Rugged, Thermowatt Constructed for Low Thermal
Resistance, High Heat Dissipation and Durability
• Blocking Voltage to 800 Volts
• 80 A Surge Current Capability
• Insulated Package Simplifies Mounting
• Indicates UL Registered — File #E69369
• Device Marking: Logo, Device Type, e.g., MCR218−6, Date Code
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ISOLATED SCRs (
8 AMPERES RMS
400 thru 800 VOLTS
)
G
A
K
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Symbol
Rating
Voltage(1)
Value
Unit
Peak Repetitive Off−State
(TJ = −40 to +125°C, Sine Wave 50 to
60 Hz, Gate Open)
MCR218−6FP
MCR218−10FP
VDRM,
VRRM
On-State RMS Current (TC = +70°C)(2)
(180° Conduction Angles)
IT(RMS)
8.0
Amps
ITSM
100
Amps
Peak Nonrepetitive Surge Current
(1/2 Cycle, Sine Wave 60 Hz,
TJ = 125°C)
Circuit Fusing (t = 8.3 ms)
Forward Peak Gate Power
(TC = +70°C, Pulse Width v 1.0 μs)
Forward Average Gate Power
(TC = +70°C, t = 8.3 ms)
Forward Peak Gate Current
(TC = +70°C, Pulse Width v 1.0 μs)
RMS Isolation Voltage (TA = 25°C,
Relative Humidity p 20%) ( )
Volts
400
800
I2t
26
A2s
PGM
5.0
Watts
PG(AV)
0.5
Watt
IGM
2.0
Amps
V(ISO)
1500
Volts
Operating Junction Temperature
TJ
−40 to
+125
°C
Storage Temperature Range
Tstg
−40 to
+150
°C
(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
(2) The case temperature reference point for all TC measurements is a point on
the center lead of the package as close as possible to the plastic body.
© Semiconductor Components Industries, LLC, 2006
August, 2006 − Rev. 3
1
1
2
3
ISOLATED TO−220 Full Pack
CASE 221C
STYLE 2
PIN ASSIGNMENT
1
Cathode
2
Anode
3
Gate
ORDERING INFORMATION
Device
Package
Shipping
MCR218−6FP
ISOLATED TO220FP
500/Box
MCR218−10FP
ISOLATED TO220FP
500/Box
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MCR218FP/D
MCR218−6FP, MCR218−10FP
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RθJC
2
°C/W
Thermal Resistance, Case to Sink
RθCS
2.2 (typ)
°C/W
Thermal Resistance, Junction to Ambient
RθJA
60
°C/W
TL
260
°C
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
—
—
—
—
10
2
μA
mA
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current
(VD = Rated VDRM, Gate Open)
TJ = 25°C
TJ = 125°C
IDRM,
IRRM
ON CHARACTERISTICS
Peak Forward On−State Voltage(1)
(ITM = 16 A Peak)
VTM
—
1
1.8
Volts
Gate Trigger Current (Continuous dc)
(VAK = 12 Vdc, RL = 100 Ohms)
IGT
—
10
25
mA
Gate Trigger Voltage (Continuous dc)
(VAK = 12 Vdc, RL = 100 Ohms)
VGT
—
—
1.5
Volts
Gate Non-Trigger Voltage
(VAK = 12 Vdc, RL = 100 Ohms, TJ = 125°C)
VGD
0.2
—
—
Volts
Holding Current
(VAK = 12 Vdc, Initiating Current = 200 mA, Gate Open)
IH
—
16
30
mA
Turn-On Time
(ITM = 8 A, IGT = 40 mAdc)
tgt
—
1.5
—
μs
—
—
15
35
—
—
—
100
—
Turn-Off Time (VD = Rated VDRM,
ITM = 8 A, IR = 8 A)
tq
TJ = 25°C
TJ = 125°C
μs
DYNAMIC CHARACTERISTICS
Critical Rate-of-Rise of Off-State Voltage
(Gate Open, VD = Rated VDRM, Exponential Waveform)
dv/dt
(1) Pulse Test: Pulse Width = 1 ms, Duty Cycle p 2%.
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2
V/μs
MCR218−6FP, MCR218−10FP
Voltage Current Characteristic of SCR
+ Current
Symbol
Parameter
VDRM
Peak Repetitive Off State Forward Voltage
IDRM
Peak Forward Blocking Current
VRRM
Peak Repetitive Off State Reverse Voltage
IRRM
Peak Reverse Blocking Current
VTM
Peak on State Voltage
IH
Holding Current
Anode +
VTM
on state
IH
IRRM at VRRM
Reverse Blocking Region
(off state)
Reverse Avalanche Region
+ Voltage
IDRM at VDRM
Forward Blocking Region
(off state)
P(AV) , AVERAGE ON-STATE POWER DISSIPATION
(WATTS)
TC , MAXIMUM ALLOWABLE CASE TEMPERATURE ( °C)
Anode −
125
115
a
α = CONDUCTION ANGLE
105
95
dc
85
75
α = 30°
0
1
60°
2
90° 120°
3
4
180°
5
6
7
8
15
12
a
α = CONDUCTION ANGLE
9
120°
60°
6
dc
180°
90°
α = 30°
3
0
0
IT(AV), AVERAGE ON-STATE FORWARD CURRENT (AMPS)
1
2
3
4
5
6
7
IT(AV), AVG. ON-STATE CURRENT (AMPS)
Figure 2. On-State Power Dissipation
Figure 1. Current Derating
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3
8
MCR218−6FP, MCR218−10FP
100
70
TJ = 25°C
50
125°C
20
10
7
5
3
2
80
I TSM , PEAK SURGE CURRENT (AMP)
iF , INSTANTANEOUS ON-STATE FORWARD CURRENT (AMP)
30
1
0.7
0.5
0.3
0.2
0.1
0.4
1.2
2
2.8
3.6
4.4
5.2
75
70
65
TC = 85°C
f = 60 Hz
60
SURGE IS PRECEDED AND
FOLLOWED BY RATED CURRENT
55
6
2
1
v F, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
3
4
6
8
10
NUMBER OF CYCLES
Figure 3. Maximum On-State Characteristics
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
1 CYCLE
Figure 4. Maximum Non-Repetitive Surge Current
1
0.7
0.5
0.3
0.2
ZθJC(t) = RθJC • r(t)
0.1
0.07
0.05
0.03
0.02
0.01
0.1
0.2 0.3
0.5
1
2
3
5
10
20 30
50
t, TIME (ms)
100
Figure 5. Thermal Response
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4
200 300
500
1.0 k
2.0 k 3.0 k 5.0 k 10 k
VGT , GATE TRIGGER VOLTAGE (NORMALIZED)
I GT, GATE TRIGGER CURRENT (NORMALIZED)
MCR218−6FP, MCR218−10FP
2
VD = 12 V
1.6
1.2
0.8
0.4
−40
−20
0
20
40
60
80
100
120
140
VD = 12 V
1.6
1.2
0.8
0.4
0
−60
−40
−20
TJ, JUNCTION TEMPERATURE (°C)
0
20
VD = 12 V
1.6
1.2
0.8
0.4
−40
60
80
100
120
Figure 7. Typical Gate Trigger Voltage versus
Temperature
2
0
−60
40
TJ, JUNCTION TEMPERATURE (°C)
Figure 6. Typical Gate Trigger Current versus
Temperature
IH , HOLDING CURRENT (NORMALIZED)
0
−60
2
−20
0
20
40
60
80
100
120
140
TJ, JUNCTION TEMPERATURE (°C)
Figure 8. Typical Holding Current versus Temperature
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5
140
MCR218−6FP, MCR218−10FP
PACKAGE DIMENSIONS
ISOLATED TO−220 Full Pack
CASE 221C−02
ISSUE C
−T−
−B−
F
C
P
N
SEATING
PLANE
S
E
A
Q
H
1 2 3
−Y−
K
Z
J
L
R
G
D
3 PL
0.25 (0.010)
M
B
M
Y
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. LEAD DIMENSIONS UNCONTROLLED WITHIN
DIMENSION Z.
DIM
A
B
C
D
E
F
G
H
J
K
L
N
P
Q
R
S
Z
INCHES
MIN
MAX
0.680
0.700
0.388
0.408
0.175
0.195
0.025
0.040
0.340
0.355
0.140
0.150
0.100 BSC
0.110
0.155
0.018
0.028
0.500
0.550
0.045
0.070
0.049
−−−
0.270
0.290
0.480
0.500
0.090
0.120
0.105
0.115
0.070
0.090
MILLIMETERS
MIN
MAX
17.28
17.78
9.86
10.36
4.45
4.95
0.64
1.01
8.64
9.01
3.56
3.81
2.54 BSC
2.80
3.93
0.46
0.71
12.70
13.97
1.15
1.77
1.25
−−−
6.86
7.36
12.20
12.70
2.29
3.04
2.67
2.92
1.78
2.28
STYLE 2:
PIN 1. CATHODE
2. ANODE
3. GATE
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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MCR218FP/D