Silicon Controlled Rectifiers

MCR225−8FP, MCR225−10FP
Preferred Device
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed primarily for half-wave ac control applications, such as
motor controls, heating controls and power supply crowbar circuits.
• Glass Passivated Junctions with Center Gate Fire for Greater Parameter
Uniformity and Stability
• Small, Rugged, Thermowatt Constructed for Low Thermal
Resistance, High Heat Dissipation and Durability
• Blocking Voltage to 800 Volts
• 300 A Surge Current Capability
• Insulated Package Simplifies Mounting
• Indicates UL Registered — File #E69369
• Device Marking: Logo, Device Type, e.g., MCR225−8FP, Date Code
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ISOLATED SCRs (
25 AMPERES RMS
600 thru 800 VOLTS
)
G
A
K
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Symbol
Rating
Voltage(1)
Value
Unit
Peak Repetitive Off−State
(TJ = −40 to +125°C, Sine Wave,
50 to 60 Hz, Gate Open)
MCR225−8FP
MCR225−10FP
VDRM,
VRRM
On-State RMS Current (TC = +70°C)
(180° Conduction Angles)
IT(RMS)
25
Amps
ITSM
300
Amps
Peak Non−repetitive Surge Current
(1/2 Cycle, Sine Wave 60 Hz,
TC = +70°C)
Circuit Fusing (t = 8.3 ms)
Forward Peak Gate Power
(TC = +70°C, Pulse Width v 1.0 μs)
Forward Average Gate Power
(TC = +70°C, t = 8.3 ms)
Forward Peak Gate Current
(TC = +70°C, Pulse Width v 1.0 μs)
RMS Isolation Voltage (TA = 25°C,
Relative Humidity p 20%) ( )
Volts
600
800
1
I2t
375
A2s
PGM
20
Watts
PG(AV)
0.5
Watt
IGM
2.0
Amps
V(ISO)
1500
Volts
Operating Junction Temperature Range
TJ
−40 to
+125
°C
Storage Temperature Range
Tstg
−40 to
+150
°C
(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
© Semiconductor Components Industries, LLC, 2006
August, 2006 − Rev. 3
1
2
3
ISOLATED TO−220 Full Pack
CASE 221C
STYLE 2
PIN ASSIGNMENT
1
Cathode
2
Anode
3
Gate
ORDERING INFORMATION
Device
Package
Shipping
MCR225−8FP
ISOLATED TO220FP
500/Box
MCR225−10FP
ISOLATED TO220FP
500/Box
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MCR225FP/D
MCR225−8FP, MCR225−10FP
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Thermal Resistance, Junction to Case
Characteristic
RθJC
1.5
°C/W
Thermal Resistance, Case to Sink
RθCS
2.2 (typ)
°C/W
Thermal Resistance, Junction to Ambient
RθJA
60
°C/W
TL
260
°C
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
—
—
—
—
10
2
μA
mA
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current
(VD = Rated VDRM, VRRM; Gate Open)
TJ = 25°C
TJ = 125°C
IDRM,
IRRM
ON CHARACTERISTICS
Peak Forward On−State Voltage(1)
(ITM = 50 A)
VTM
—
—
1.8
Volts
Gate Trigger Current (Continuous dc)
(VAK = 12 Vdc, RL = 100 Ohms)
IGT
—
—
40
mA
Gate Trigger Voltage (Continuous dc)
(VAK = 12 Vdc, RL = 100 Ohms)
VGT
—
0.8
1.5
Volts
Gate Non-Trigger Voltage
(VAK = 12 Vdc, RL = 100 Ohms, TJ = 125°C)
VGD
0.2
—
—
Volts
Holding Current
(VAK = 12 Vdc, Initiating Current = 200 mA, Gate Open)
IH
—
20
40
mA
Turn-On Time
(ITM = 25 A, IGT = 40 mAdc)
tgt
—
1.5
—
μs
Turn-Off Time (VDRM = Rated Voltage)
(ITM = 25 A, IR = 25 A)
(ITM = 25 A, IR = 25 A, TJ = 125°C)
tq
—
—
15
35
—
—
—
100
—
μs
DYNAMIC CHARACTERISTICS
Critical Rate-of-Rise of Off-State Voltage
(Gate Open, VD = Rated VDRM, Exponential Waveform)
dv/dt
(1) Pulse Test: Pulse Width = 1.0 ms, Duty Cycle ≤ 2%.
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2
V/μs
MCR225−8FP, MCR225−10FP
Voltage Current Characteristic of SCR
+ Current
Symbol
Parameter
VDRM
Peak Repetitive Off State Forward Voltage
IDRM
Peak Forward Blocking Current
VRRM
Peak Repetitive Off State Reverse Voltage
IRRM
Peak Reverse Blocking Current
VTM
Peak on State Voltage
IH
Holding Current
Anode +
VTM
on state
IH
IRRM at VRRM
Reverse Blocking Region
(off state)
Reverse Avalanche Region
+ Voltage
IDRM at VDRM
Forward Blocking Region
(off state)
Anode −
32
130
120
P(AV) , AVERAGE POWER (WATTS)
TC, MAXIMUM CASE TEMPERATURE (° C)
TYPICAL CHARACTERISTICS
α
α = CONDUCTION ANGLE
110
180°
α
24
α = CONDUCTION ANGLE
60°
dc
90°
α = 30°
16
100
α = 30°
90
80
0
4
60°
90°
8
180°
dc
12
16
20
TJ = 125°C
8
0
4
0
IT(AV), ON-STATE FORWARD CURRENT (AMPS)
8
12
16
20
IT(AV), AVERAGE ON-STATE FORWARD CURRENT (AMPS)
Figure 2. Maximum On−State Power Dissipation
Figure 1. Average Current Derating
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3
MCR225−8FP, MCR225−10FP
100
70
50
30
125°C
25°C
10
7
5
3
2
300
1
275
0.7
250
0.5
225
0.3
0.2
TC = 85°C
f = 60 Hz
200
0.1
SURGE IS PRECEDED AND
FOLLOWED BY RATED CURRENT
175
0
0.4
0.8
1.2
1.6
2
vF, INSTANTANEOUS VOLTAGE (VOLTS)
2.4
2
1
2.8
3
4
6
8
10
NUMBER OF CYCLES
Figure 3. Maximum Forward Voltage
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
1 CYCLE
I TSM , PEAK SURGE CURRENT (AMP)
iF , INSTANTANEOUS FORWARD CURRENT (AMPS)
20
Figure 4. Maximum Non-Repetitive Surge Current
1
0.7
0.5
0.3
0.2
ZθJC(t) = RθJC • r(t)
0.1
0.07
0.05
0.03
0.02
0.01
0.1
0.2 0.3
0.5
1
2
3
5
10
20 30
50
t, TIME (ms)
100
Figure 5. Thermal Response
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4
200 300
500
1.0 k
2.0 k 3.0 k 5.0 k
10 k
VGT , GATE TRIGGER VOLTAGE (NORMALIZED)
I GT, GATE TRIGGER CURRENT (NORMALIZED)
MCR225−8FP, MCR225−10FP
2
VD = 12 V
1.6
1.2
0.8
0.4
−40
−20
0
20
40
60
80
100
120
140
VD = 12 V
1.6
1.2
0.8
0.4
0
−60
−40
−20
0
20
40
60
80
100
120
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 6. Typical Gate Trigger Current
versus Temperature
Figure 7. Typical Gate Trigger Voltage
versus Temperature
2
IH , HOLDING CURRENT (NORMALIZED)
0
−60
2
VD = 12 V
1.6
1.2
0.8
0.4
0
−60
−40
−20
0
20
40
60
80
100
120
TJ, JUNCTION TEMPERATURE (°C)
Figure 8. Typical Holding Current
versus Temperature
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5
140
140
MCR225−8FP, MCR225−10FP
PACKAGE DIMENSIONS
ISOLATED TO−220 Full Pack
CASE 221C−02
ISSUE C
−T−
−B−
F
C
P
N
SEATING
PLANE
S
E
A
Q
H
1 2 3
−Y−
K
Z
J
L
R
G
D
3 PL
0.25 (0.010)
M
B
M
Y
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. LEAD DIMENSIONS UNCONTROLLED WITHIN
DIMENSION Z.
DIM
A
B
C
D
E
F
G
H
J
K
L
N
P
Q
R
S
Z
INCHES
MIN
MAX
0.680
0.700
0.388
0.408
0.175
0.195
0.025
0.040
0.340
0.355
0.140
0.150
0.100 BSC
0.110
0.155
0.018
0.028
0.500
0.550
0.045
0.070
0.049
−−−
0.270
0.290
0.480
0.500
0.090
0.120
0.105
0.115
0.070
0.090
MILLIMETERS
MIN
MAX
17.28
17.78
9.86
10.36
4.45
4.95
0.64
1.01
8.64
9.01
3.56
3.81
2.54 BSC
2.80
3.93
0.46
0.71
12.70
13.97
1.15
1.77
1.25
−−−
6.86
7.36
12.20
12.70
2.29
3.04
2.67
2.92
1.78
2.28
STYLE 2:
PIN 1. CATHODE
2. ANODE
3. GATE
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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MCR225FP/D