MMVL535T1 Advance Information Voltage Variable Capacitance Diode for UHF Band Radio http://onsemi.com This device is designed for UHF tuning and general frequency control and tuning. This device is supplied in the SOD−323 plastic surface mount package for high volume, pick and place assembly requirements, and is a member of the Motorola microExecutive series. • • • • • 15 VOLT VOLTAGE VARIABLE CAPACITANCE DIODE High Figure of Merit — Q Guaranteed Capacitance Range Controlled and Uniform Tuning Ratio 0805 Footprint Compatible SOD−323 package Available in tape and reel 1 Cathode 2 Anode SOD −323 CASE 477 −02 STYLE 1 1 2 MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Value Unit Forward Current IF 20 mAdc Reverse Voltage VR 15 Vdc Junction Temperature TJ 125 °C Storage Temperature Range Tstg −55 to +125 °C Rating ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Typ Max Unit Reverse Voltage (IR = 1.0 μAdc) VR 15 — — Vdc Reverse Current (VR = 15 Vdc) IR — — 8.0 nAdc 17.5 18.7 20 9.0 10.5 12.0 5.4 6.0 6.6 Characteristic Capacitance (VR = 1 V, f = 1.0 MHz) C1V Capacitance (VR = 4 V, f = 1.0 MHz) C4V Capacitance (VR = 10 V, f = 1.0 MHz) C10V Capacitance Ratio Series Resistance (VR = 5.0 V, f = 470 MHz) © Semiconductor Components Industries, LLC, 2005 August, 2006 − Rev. 1 1 pF pF pF C1V/10V 2.6 3.1 3.7 rs — 0.27 0.5 W Publication Order Number: MMVL535T1/D MMVL535T1 TYPICAL DEVICE CHARACTERISTICS 10 I R , REVERSE CURRENT (nA) C, CAPACITANCE (pF) 100 10 1.0 2 0 4 6 8 10 12 14 TA = 60°C 0.1 TA = 25°C 0.01 0 4 6 8 10 12 14 VR, REVERSE VOLTAGE (VOLTS) Figure 1. Capacitance versus Reverse Voltage Figure 2. Reverse Current versus Reverse Voltage 0.40 0.2 0.1 VR = 1 V 0.20 VR = 10 V 0.10 0.00 100 100 10 1.0 VR, REVERSE VOLTAGE (VOLTS) 0 16 0.30 100 f, FREQUENCY (MHz) Figure 4. Series Resistance versus Frequency Figure 3. Series Resistance versus Reverse Voltage 5 10000 VR = 1.0 Vdc 4 VR = 2.0 Vdc 3 1000 VR = 4.0 Vdc 2 Q, QUALITY CAPACITANCE CHANGE RATIO (%) 2 VR, REVERSE VOLTAGE (VOLTS) r s , SERIES RESISTANCE (OHMS) r s , SERIES RESISTANCE (OHMS) 1.0 0.001 16 0.3 0.0 TA = 80°C 1 VR = 10 Vdc 0 VR = 10 V 100 VR = 1 V −1 10 −2 −3 −4 −40 −20 0 +20 +40 +60 TA, AMBIENT TEMPERATURE (°C) +80 1.0 100 +100 100 f, FREQUENCY (MHz) Figure 5. Capacitance Change Ratio versus Ambient Temperature Figure 6. Quality versus Frequency http://onsemi.com 2 MMVL535T1 PACKAGE DIMENSIONS CASE 477−02 SOD−323 ISSUE A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. LEAD THICKNESS SPECIFIED PER L/F DRAWING WITH SOLDER PLATING. K A D 1 2 B E C J NOTE 3 DIM A B C D E H J K MILLIMETERS INCHES MIN MAX MIN MAX 1.60 1.80 0.063 0.071 1.15 1.35 0.045 0.053 0.80 1.00 0.031 0.039 0.25 0.40 0.010 0.016 0.15 REF 0.006 REF 0.00 0.10 0.000 0.004 0.089 0.177 0.0035 0.0070 2.30 2.70 0.091 0.106 STYLE 1: PIN 1. CATHODE 2. ANODE H ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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